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High-performance carbon-electrode-based self-powered optoelectronic synaptic devices

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Science China(Information Sciences) 2024年第5期67卷 339-340页

作者： Wen HUANG Xuwen XIA Huixing ZHANG Tenglong GUO Pengjie HANG Bin LI Jiawei TANG Biao LI Chen ZHU Lei WANG Deren YANG Xuegong YU Xing'ao LI Jiangsu Provincial Engineering Research Center of Low Dimensional Physics and New Energy & School of Science Nanjing University of Posts and Telecommunications College of integrated circuit Science and Engineering Nanjing University of Posts and Telecommunications State key laboratory of Silicon and Advanced Semiconductor Materials Zhejiang University

A two-terminal self-powered optoelectronic structure could mimic synaptic functions of a human brain synapse unit(Figure 1(a)) based on the photovoltaic effects [1], demonstrating the potential for decreasing energy consumption for future computing. However, current self-powered optoelectronic synaptic devices face issues of stability and cost,which mainly arise from noble metal electrodes and independent hole transport layers used in these structures. Substituting low-cost carbon for these metal electrodes and carrier transport layers may promise to solve these challenges.

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Superconducting single-photon detector with a speed of 5 GHz and a photon number resolution of 61

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Photonics Research 2024年第6期12卷 1328-1333页

作者： TIANZHU ZHANG JIA HUANG XINGYU ZHANG CHAOMENG DING HUIQIN YU YOU XIAO CHAOLIN LV XIAOYU LIU ZHEN WANG LIXING YOU XIAOMING XIE HAO LI Shanghai key laboratory of Superconductor integrated circuit Technology Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Photon Technology(zhejiang)Co. Ltd.Jiaxing 314100China

Rapid detection and discrimination of single photons are pivotal in various applications,such as deep-space laser communication,high-rate quantum key distribution,and optical quantum ***,conventional single-photon detectors(SPDs),including semiconducting and recently developed superconducting detectors,have limited detection speed and photon number resolution(PNR),which pose significant challenges in practical *** this paper,we present an efficient,fast SPD with good PNR,which has 64 paralleled,sandwiched superconducting nanowires fabricated on a distributed Bragg *** detector is operated in a compact Gifford–McMahon cryocooler that supports 64 electrical channels and has a minimum working temperature of 2.3 *** combined detector system shows a functional nanowire yield of 61/64,a system detection efficiency of 90%at 1550 nm,and a maximum count rate of 5.2 ***,it has a maximum PNR of 61,corresponding to the operating *** SPD signifies a substantial improvement in quantum detector technology,with potential applications in deep-space laser communication,high-speed quantum communication,and fundamental quantum optics experiments.

关键词： communication photon quantum

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New structure transistors for advanced technology node CMOS ICs

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National Science Review 2024年第3期11卷 24-41页

作者： Qingzhu Zhang Yongkui Zhang Yanna Luo Huaxiang Yin integrated circuit Advanced Process R&D Center Institute of Microelectronics of Chinese Academy of Sciences(IMECAS) State key Lab of Fabrication Technologies for integrated circuits Institute of Microelectronics of Chinese Academy of Sciences School of integrated circuits University of Chinese Academy of Sciences

Over recent decades, advancements in complementary metal-oxide-semiconductor integrated circuits(ICs)have mainly relied on structural innovations in transistors. From planar transistors to the fin field-effect transistor(FinFET) and gate-all-around FET(GAAFET), more gate electrodes have been added to three-dimensional(3D) channels with enhanced control and carrier conductance to provide higher electrostatic integrity and higher operating currents within the same device footprint. Beyond the 1-nm node, Moore's law scaling is no longer expected to be applicable to geometrical shrinkage. Vertical transistor stacking, e.g. in complementary FETs(CFET), 3D stack(3DS) FETs and vertical-channel transistors(VFET), for enhanced density and variable circuit or system design represents a revolutionary scaling approach for sustained IC development. Herein, innovative works on specific structures, key process breakthroughs, shrinking cell sizes and design methodologies for transistor structure research and development are reviewed. Perspectives on future innovations in advanced transistors with new channel materials and operating theories are also discussed.

关键词： transistor CMOS GAAFET CFET 3DS FET

Transparent micropatterned conductive films based on highlyordered nanowire network

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Nano Research 2024年第5期17卷 4288-4297页

作者： Xin-Ran Zhang Hai-Tao Deng Xu Zeng Yi-Lin Wang Peng Huang Xiao-Sheng Zhang School of integrated circuit Science and Engineering University of Electronic Science and Technology of ChinaChengdu 611731China

Transparent conductive films that are based on nanowire networks are essential to construct flexible,wearable,and even stretchable ***,large-scale precise micropatterning,especially with regard to the controllability of the organizing orientation of nanowires,is a critical ***,we proposed a liquid film rupture self-assembly approach for manufacturing transparent conductive films with microstructure arrays based on a highly ordered nanowire *** large-scale microstructure conductive films were fabricated through air-liquid interface self-assembly and liquid film rupture *** typical micropattern morphologies,including square,hexagon,circle,serpentine,etc.,were prepared to reveal the universal applicability of the proposed *** homogeneity and controllability of this approach were verified for multiple *** the assembly cycles increasing,the optical transmittance decreases *** addition,theoretical model analysis is carried out,and the analytical formula of the speed of the film moving with the surface tension and the density of the liquid film is ***,the feasibility of this approach for piezoresistive strain sensors is *** fabrication approach demonstrated a cost-effective and efficient method for precisely arranging nanowires,which is useful in transparent and wearable applications.

关键词： flexible electronics transparent conductive network micropatterning nanowires micro electromechanical systems(MEMS)

Single-structure 3-axis Lorentz force magnetometer based on an AlN-on-Si MEMS resonator

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Microsystems & Nanoengineering 2024年第3期10卷 75-86页

作者： Cheng Tu Xu-heng Ou-Yang Ying-jie Wu Xiao-sheng Zhang School of integrated circuit Science and Engineering University of Electronic Science and Technology of ChinaChengdu 611731China

This work presents a single-structure 3-axis Lorentz force magnetometer(LFM)based on an AlN-on-Si MEMS *** operation of the proposed LFM relies on the flexible manipulation of applied excitation currents in different directions and frequencies,enabling the effective actuation of two mechanical vibration modes in a single device for magnetic field measurements in three ***,the excited out-of-plane drum-like mode at 277 kHz is used for measuring the x-and y-axis magnetic fields,while the in-plane square-extensional mode at 5.4 MHz is used for measuring the z-axis magnetic *** different configurations of applied excitation currents ensure good crossinterference immunity among the three *** to conventional capacitive LFMs,the proposed piezoelectric LFM utilizes strong electromechanical coupling from the AlN layer,which allows it to operate at ambient pressure with a high *** understand and analyze the measured results,a novel equivalent circuit model for the proposed LFM is also reported in this work,which serves to separate the effect of Lorentz force from the unwanted capacitive *** demonstrated 3-axis LFM exhibits measured magnetic responsivities of 1.74 ppm/mT,1.83 ppm/mT and 6.75 ppm/mT in the x-,y-and z-axes,respectively,which are comparable to their capacitive counterparts.

关键词： resonator Lorentz structure

Emergent ultra-high temperature ferromagnetism in La_(2)CoO_(4±x) thin films

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Nano Research 2024年第8期17卷 7250-7255页

作者： Ziang Meng Han Yan Peixin Qin Zhuo Yin Peiheng Jiang Xiaorong Zhou Xiaoning Wang Hongyu Chen Li Liu Zhiyuan Duan Guojian Zhao Weisheng Zhao Fengxia Hu Qinghua Zhang Zhicheng Zhong Zhiqi Liu School of Materials Science and Engineering Beihang UniversityBeijing 100191China Beijing National laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China CAS key laboratory of Magnetic Materials and Devices and zhejiang Province key laboratory of Magnetic Materials and Application Technology Ningbo Institute of Materials Technology and EngineeringChinese Academy of SciencesNingbo 315201China Fert Beijing Institute School of Integrated Circuit Science and EngineeringBeihang UniversityBeijing 100191China

Searching for novel ferromagnetic oxides with high Curie temperature(TC)has been one of the main goals for oxide *** well-known perovskite cobaltate LaCoO_(3) is a classical ferromagnet in its thin-film form;however,it suffers from a low TC(~85 K).Here we report a new type of ferromagnetic La-Co-O films with an ultrahigh TC of~820 *** are fabricated by pulsed laser deposition from a LaCoO_(3) target at low oxygen partial *** structural analysis indicates that they crystallize in terms of the Ruddlesden–Popper phase of La_(2)CoO_(4±x).In sharp contrast to the antiferromagnetism of bulk La_(2)CoO_(4),the strong ferromagnetism in the La_(2)CoO_(4±x) thin films is firmly demonstrated by magnetometry measurements,X-ray magnetic circular dichroism characterization,and magnetotransport *** importantly,density functional theory calculations indicate that the nonstoichiometric oxygen induces an antiferromagnetic-to-ferromagnetic phase transition,accompanied by the orbital reconstruction of Co 3d ***,our study provides an attractive strategy for designing or synthesizing exotic magnetic oxides with high ordering temperatures.

关键词： ferromagnetic oxides ultra-high Curie temperature La_(2)CoO_(4) spin current transport oxygen engineering

Determination of molecular energies via variational-based quantum imaginary time evolution in a superconducting qubit system

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Science China(Physics,Mechanics & Astronomy) 2024年第4期67卷 1-11页

作者： Zhiwen Zong Sainan Huai Tianqi Cai Wenyan Jin Ze Zhan Zhenxing Zhang Kunliang Bu Liyang Sui Ying Fei Yicong Zheng Shengyu Zhang Jianlan Wu Yi Yin zhejiang Province key laboratory of Quantum Technology and Device School of PhysicsZhejiang UniversityHangzhou 310027China Tencent Quantum laboratory Shenzhen 518057China

As a valid tool for solving ground state problems,imaginary time evolution(ITE)is widely used in physical and chemical *** ITE-based algorithms in their quantum counterpart have recently been proposed and applied to some real *** experimentally realize the variational-based quantum imaginary time evolution(QITE)algorithm to simulate the ground state energy of hydrogen(H_2)and lithium hydride(Li H)molecules in a superconducting qubit *** H_2 molecule is directly simulated using the 3-qubit circuit with unitary-coupled clusters(UCC)*** also combine QITE with the cluster mean-field(CMF)method to obtain an effective *** Li H molecule is correspondingly simulated using the 3-qubit circuit with hardware-efficient *** comparison,the Li H molecule is also directly simulated using the 4-qubit circuit with UCC ansatz at the equilibrium *** the experimental results show a convergence within 4 iterations,with high-fidelity ground state energy *** a more complex system in the future,the CMF may allow further grouping of interactions to obtain an effective Hamiltonian,then the hybrid QITE algorithm can possibly simulate a relatively large-scale system with fewer qubits.

关键词： quantum computation quantum algorithm superconducting qubit

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Realization of Complete Boolean Logic and Combinational Logic Functionalities on a Memristor-Based Universal Logic circuit

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Chinese Journal of Electronics 2024年第5期33卷 1137-1146页

作者： Xiaojuan LIAN Chuanyang SUN Zeheng TAO Xiang WAN Xiaoyan LIU Zhikuang CAI Lei WANG College of integrated circuit Science and Engineering Nanjing University of Posts and Telecommunications

Memristors are a promising solution for building an advanced computing system due to their excellent characteristics, including small energy consumption, high integration density, fast write/read speed, great endurance and so on. In this work, we firstly design three basis logic XNOR1, XNOR2 and XOR gates by virtue of memristor ratioed logic(MRL), and further construct 1-bit numerical comparators, 2-bit numerical comparators and full adder 1 based on the above XNOR1, XNOR2 and XOR gates. Furthermore, we propose and design a universal logic circuit that can realize four different kinds of logic functions(AND, OR, XOR, XNOR) at the same time. Subsequently, a full adder 2 is built using XOR function of this universal logic circuit. Compared with the traditional CMOS circuits,the universal logic circuit designed in this work exhibits several merits such as fewer components, less power, and lower delay. This work demonstrates that memristors can be used as a potential solution for building a novel computing architecture.

关键词： Power demand Logic circuits Buildings Memristors Logic gates Logic functions Software Memristor Universal logic circuit Memristor ratioed logic Numerical comparator Full adder design DELAY

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Performance improvements in complementary metal oxide semiconductor devices and circuits based on fin field-effect transistors using 3-nm ferroelectric Hf_(0.5)Zr_(0.5)O_(2)

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Rare Metals 2024年第7期43卷 3242-3249页

作者： Zhao-Hao Zhang Yan-Na Luo Gao-Bo Xu Jia-Xin Yao Zhen-Hua Wu Hong-Bin Zhao Qing-Zhu Zhang Hua-Xiang Yin Jun Luo Wen-Wu Wang Hai-Ling Tu integrated circuit Advanced R&D Center Institute of Microelectronics of Chinese Academy of SciencesBeijing 100029China School of integrated circuits University of Chinese Academy of SciencesBeijing 100049China State key laboratory of Advanced Materials for Smart Sensing General Research Institute for Nonferrous MetalsBeijing 100088China

In this work,a conventional HfO_(2) gate dielectric layer is replaced with a 3-nm ferroelectric(Fe) HZO layer in the gate stacks of advanced fin field-effect transistors(FinFETs).Fe-induced characteristics,e.g.,negative drain induced barrier lowering(N-DIBL) and negative differential resistance(NDR),are clearly observed for both p-and n-type HZO-based *** characteristics are attributed to the enhanced ferroelectricity of the 3-nm hafnium zirconium oxide(HZO) film,caused by Al doping from the TiAlC capping *** mechanism is verified for capacitors with structures similar to the *** to the enhanced ferroelectricity and N-DIBL phenomenon,the drain current(I_(DS))of the HZO-FinFETs is greater than that of HfO_(2)-FinFETs and obtained at a lower operating ***,circuits based on HZO-FinFET achieve higher performance than those based on HfO_(2)-FinFET at a low voltage drain(V_(DD)),which indicates the application feasibility of the HZO-FinFETs in the ultralow power integrated circuits.

关键词： FinFET Ferroelectric Hafnium zirconium oxide Subthreshold swing Low power

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