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Journal of Materials Science & Technology 2015年第2期31卷 223-228页

作者： Pengjun Zhao Lei Wang Liang Bian Jinbao Xu Aimin Chang Xinqian Xiong Fanglong Xu Jiaqi Zhang Key Laboratory of Functional Materials and Devices for Special Environments of CAS Xinjiang Key Laboratory of Electronic Information Materials and DevicesXinjiang Technical Institute of Physics & Chemistry of CAS University of Chinese Academy of Sciences

Three-dimensional hierarchical structure coral-like BaTiO3 nanoparticles have been self-assembled by a facile one step hydrothermal method. Cetyltrimethyl ammonium bromide(CTAB),Ba(OH)2·8H2O and tetrabutyl titanate have been used as precursors. The prepared Ba TiO3 exhibits cubic perovskite phase at room temperature,and the coral-like architecture is a micro-nano hiberarchy consisted of dendrimer-like structure and trunk-like structure. By adjusting the hydrothermal duration and the precursor substances,a surfactant induced mechanism is proposed to understand the self-assembly process. UV-vis measurement demonstrates that the as-prepared Ba TiO3 nanoparticles exhibit dozens of times overwhelming absorptive character compared to the ordinary nanospheres at ultraviolet band,which is benefited from the coral-like porous framework. Moreover,halogen anions( F,Cl,Br,and I) have been chosen to adjust the coral-like Ba TiO3 physical properties. Results show the halogen doping produces distinct modulation effect on the grain size,UV-vis absorbance and photoluminescence properties of the materials. The coral-like BaTiO3 nanoparticle and its halogen modified ramifications offer significant opportunities to develop nano-laser devices,photon detectors,photocatalyst based on BaTiO3 perovskite materials.

关键词： BaTiO3 Halogen doping Hydrothermal synthesis Coral

Low-Dose 1 MeV Electron Irradiation-Induced Enhancement in the Photoluminescence Emission of Ga-Rich InGaN Multiple Quantum Wells

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Chinese physics Letters 2013年第7期30卷 135-137页

作者： ZHANG Xiao-Fu LI Yu-Dong GUO Qi LU Wu Key Laboratory of Functional Materials and Devices for Special Environments Xinjiang Technical Institute of Physics&ChemistryChinese Academy of SciencesUrumqi 830011

We investigate the photoluminescence(PL)emission from InGaN/GaN multiple quantum-well structures before and after 1 MeV electron *** PL peak intensity exhibits a slight enhancement after low-dose electron irradiation(2×10^(13) e/cm^(2)),and then decreases with the cumulative electron ***,the full width at half maximum of the PL spectrum narrows after low-dose electron irradiation and widens when the irradiation dose is relatively *** respect to the yellow photoluminescence,there is no significant change until the electron fluence has accumulated up to 10^(14) e/cm^(2).

关键词： InGaN/GaN Electron Quantum

Solvothermal synthesis of nanocrystalline FeS_2

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Science China(physics,Mechanics & Astronomy) 2005年第2期48卷 188-200页

作者： CHEN Yanhua1, ZHENG Yufeng1, ZHANG Xiaogang2, SUN Yanfei1 & DONG Youzhong11. physics Department of xinjiang University, Urumqi 830046, China 2. institute of Applied chemistry of xinjiang University, Urumqi 830046, China physics Department of xinjiang University Urumqi China institute of Applied chemistry of xinjiang University Urumqi China

This paper reports on the synthesis of the nanocrystalline FeS2 via a solvent-thermal process. Using FeSO4 and NH2CSNH2 as precursors and polyvinyl- pyrrolidone (PVP) as a protective agent (dispersant), we have successfully synthesized nanocrystalline FeS2 both under acidic conditions (pH = 5) and under alkali conditions (pH = 10) at various temperatures and for different time in alcohol-water solution. X-ray diffraction (XRD), Transmission electron microscopy (TEM) and Ultraviolet Visible (UV-VIS) spectroscopy were used to characterize the morphology, structure, particle size and optical characterization of sample synthesized under acidic condition, and the XRD pattern was refined by Rietveld method. The experimental result shows that nanocrystalline FeS2 with uniform size, highly crystallized quality and excellent dispersivity has been synthesized at 200℃for 36 h.

关键词： FeS2 (Pyrite), solvothermal, PVP, the Rietveld method.

Total ionizing dose effects of domestic Si Ge HBTs under different dose rates

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Chinese physics C 2016年第3期40卷 104-108页

作者：刘默寒陆妩马武英王信郭旗何承发姜柯李小龙荀明珠 Key Laboratory of Functional Materials and Devices for Special Environments Xinjiang Key Laboratory of Electronic Information Materials and DevicesXinjiang Technical Institute of Physics and ChemistryChinese Academy of Sciences School of physics Science and Technology Xinjiang University School of physics Science and Technology Xinjiang University

The total ionizing radiation（TID） response of commercial NPN silicon germanium hetero-junction bipolar transistors（Si Ge HBTs） produced domestically are investigated under dose rates of 800 m Gy（Si）/s and 1.3 m Gy（Si）/s with a Co-60 gamma irradiation source. The changes of transistor parameters such as Gummel characteristics, and excess base current before and after irradiation, are examined. The results of the experiments show that for the KT1151, the radiation damage is slightly different under the different dose rates after prolonged annealing, and shows a time dependent effect（TDE）. For the KT9041, however, the degradations of low dose rate irradiation is higher than for the high dose rate, demonstrating that there is a potential enhanced low dose rate sensitivity（ELDRS） effect for the KT9041. The possible underlying physical mechanisms of the different dose rates responses induced by the gamma rays are discussed.

关键词： SiGe HBTs TID ELDRS annealing

Learning Sequential and Structural Dependencies Between Nucleotides for RNA N6-Methyladenosine Site Identification

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IEEE/CAA Journal of Automatica Sinica 2024年第10期11卷 2123-2134页

作者： Guodong Li Bowei Zhao Xiaorui Su Dongxu Li Yue Yang Zhi Zeng Lun Hu xinjiang technical institute of physics and chemistry Chinese Academy of ScienceUrumqi 830011China College of Computer Xi’an Jiaotong UniversityXi’an 710049China IEEE

N6-methyladenosine(m6A)is an important RNA methylation modification involved in regulating diverse biological processes across multiple ***,the identification of m6A modification sites provides valuable insight into the biological mechanisms of complex diseases at the post-transcriptional *** a variety of identification algorithms have been proposed recently,most of them capture the features of m6A modification sites by focusing on the sequential dependencies of nucleotides at different positions in RNA sequences,while ignoring the structural dependencies of nucleotides in their threedimensional *** overcome this issue,we propose a cross-species end-to-end deep learning model,namely CR-NSSD,which conduct a cross-domain representation learning process integrating nucleotide structural and sequential dependencies for RNA m6A site ***,CR-NSSD first obtains the pre-coded representations of RNA sequences by incorporating the position information into single-nucleotide states with chaos game representation *** then constructs a crossdomain reconstruction encoder to learn the sequential and structural dependencies between *** minimizing the reconstruction and binary cross-entropy losses,CR-NSSD is trained to complete the task of m6A site *** experiments have demonstrated the promising performance of CR-NSSD by comparing it with several state-of-the-art m6A identification ***,the results of cross-species prediction indicate that the integration of sequential and structural dependencies allows CR-NSSD to capture general features of m6A modification sites among different species,thus improving the accuracy of cross-species identification.

关键词： Cross-domain reconstruction cross-species prediction N6-methyladenosine(m6A)modification site RNA sequence sequential and structural dependencies

Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation

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Chinese physics B 2015年第10期24卷 380-385页

作者：郑齐文崔江维周航余德昭余学峰陆妩郭旗任迪远 Key Laboratory of Functional Materials and Devices for Special Environments Xinjiang Technical Institute of Physics and ChemistryChinese Academy of Sciences xinjiang Key Laboratory of Electronic Information Material and Device University of Chinese Academy of Sciences

Functional failure mode of commercial deep sub-micron static random access memory（SRAM） induced by total dose irradiation is experimentally analyzed and verified by circuit simulation. We extensively characterize the functional failure mode of the device by testing its electrical parameters and function with test patterns covering different functional failure modes. Experimental results reveal that the functional failure mode of the device is a temporary function interruption caused by peripheral circuits being sensitive to the standby current rising. By including radiation-induced threshold shift and off-state leakage current in memory cell transistors, we simulate the influence of radiation on the functionality of the memory cell. Simulation results reveal that the memory cell is tolerant to irradiation due to its high stability, which agrees with our experimental result.

关键词： total dose irradiation static random access memory functional failure mode

Pattern imprinting in deep sub-micron static random access memories induced by total dose irradiation

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Chinese physics B 2014年第10期23卷 362-368页

作者：郑齐文余学峰崔江维郭旗任迪远丛忠超周航 Key Laboratory of Functional Materials and Devices for Special Environments Xinjiang Technical Institute of Physics and ChemistryChinese Academy of Sciences xinjiang Key Laboratory of Electronic Information Material and Device University of Chinese Academy of Sciences

Pattem imprinting in deep sub-micron static random access memories （SRAMs） during total dose irradiation is inves- tigated in detail. As the dose accumulates, the data pattern of memory cells loading during irradiation is gradually imprinted on their background data pattern. We build a relationship between the memory cell＇s static noise margin （SNM） and the background data, and study the influence of irradiation on the probability density function of ASNM, which is the difference between two data sides＇ SNMs, to discuss the reason for pattern imprinting. Finally, we demonstrate that, for micron and deep sub-micron devices, the mechanism of pattern imprinting is the bias-dependent threshold shift of the transistor, but for a deep sub-micron device the shift results from charge trapping in the shallow trench isolation （STI） oxide rather than from the gate oxide of the micron-device.

关键词： total dose irradiation static random access memory pattern imprinting deep sub-micron

Direct synthesis of graphene nanosheets support Pd nanodendrites for electrocatalytic formic acid oxidation

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Chinese physics B 2015年第11期24卷 539-543页

作者：杨苏东陈琳 Laboratory of Environmental Science and Technology The Xinjiang Technical Institute of Physics and ChemistryKey Laboratory of Functional Materials and Devices for Special EnvironmentsChinese Academy of Sciences

We report a solvothermal method preparation of dendritic Pd nanoparticles （DPNs） and spherical Pd nanoparticles （SPNs） supported on reduced graphene oxide （RGO）. Drastically different morphologies of Pd NPs with nanodendritic structures or spherical structures were observed on graphene by controlling the reduction degree of graphene oxide （GO） un- der mild conditions. In addition to being a commonplace substrate, GO plays a more important role that relies on its surface groups, which serves as a shape-directing agent to direct the dendritic growth. As a result, the obtained DPNs/RGO catalyst exhibits a significantly enhanced electro-catalytic behavior for the oxidation of formic acid compared to the SPNs/RGO catalyst.

关键词： graphene nanosheet Pd nanostructure nanodendrite electrocatalyst

Impact of doped boron concentration in emitter on high-and low-dose-rate damage in lateral PNP transistors

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Journal of Semiconductors 2010年第3期31卷 45-49页

作者：郑玉展陆妩任迪远王义元王志宽杨永晖 xinjiang technical institute of physics and chemistry Chinese Academy of Sciences Graduate University of the Chinese Academy of Sciences National Key Laboratory of Analog Integrated Circuits

The characteristics of radiation damage under a high or low dose rate in lateral PNP transistors with a heavily or lightly doped emitter is investigated. Experimental results show that as the total dose increases, the base current of transistors would increase and the current gain decreases. Furthermore, more degradation has been found in lightly-doped PNP transistors, and an abnormal effect is observed in heavily doped transistors. The role of radiation defects, especially the double effects of oxide trapped charge, is discussed in heavily or lightly doped transistors. Finally, through comparison between the high- and low-dose-rate response of the collector current in heavily doped lateral PNP transistors, the abnormal effect can be attributed to the annealing of the oxide trapped charge. The response of the collector current, in heavily doped PNP transistors under high- and low-dose-rate irradiation is described in detail.

关键词： doping concentration lateral PNP transistors radiation damage dose rates

Ab initio study of the reaction path of the reaction HNCO+CN

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Science China chemistry 2005年第4期48卷 279-285页

作者： ZHANG Xinzhuang ZHEN Zhen LIU Xinhou technical institute of physics and chemistry of Chinese Academy of Sciences Beijing 100101China Technical Institute of Physics and Chemistry of Chinese Academy of SciencesBeijing 100101China Technical Institute of Physics and Chemistry of Chinese Academy of SciencesBeijing 100101China

We report ab initio UMP2 calculations of the reaction of CN with HNCO using 6-311G(d,p) basis *** obtained results show that the reaction has two product channels:HNCO+CN→HCN+NCO (1) and HNCO+CN→HNCN+CO (2).Channel (1) is a hydrogen abstraction reaction,which is a concerted *** calculated potential energy barrier is 20.80 kJ/mol at UMP2(full)/6-311G(d,p) *** the range of reaction temperature (1000―2100 K),the conventional transition theory rate constant for channel (1) ranges from 0.32×10?11 to 6.9×10?11cm3?mol?1·s?1,which is close to the experimental *** (2) is a stepwise re-action involving an intermediate during the process of *** UMP2(full)/6-311G(d,p) po-tential energy barrier is 83.42 kJ/mol for the rate-controlling step,which is much higher than that of channel (1).

关键词： isocyanic acid, radical reaction, ab initio method, intermediate.