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Enhancing the water-resistance stability of CaS:Eu^(2+),Sm^(2+) phosphor with SiO_2-PMMA composite coating

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Journal of Rare Earths 2015年第9期33卷 922-926页

作者：张杰强范艳伟陈朝阳闫世友王军华赵鹏君郝斌盖敏强 key laboratory of Functional Materials and Devices under Special Environments Xinjiang Key Laboratory of Electronic Information Materials and Devices Xinjiang Technical Institute of Physics and Chemistry Chinese Academy of Sciences University of Chinese Academy of Sciences

This work was aimed at improving the water-resistance stability of CaS：Eu2＋,Sm2＋ phosphor. An organic-inorganic com- posite coating method was adopted in order to obtain ideal phosphor. The phosphor was coated with SiO2 via sol-gel technique and it was also covered by polymethyl methacrylate （PMMA） via dissolution-cohesion technique. Powder X-ray diffraction （XRD） patterns, fluorescence spectroscopy and transmission electron microscopy （TEM） were employed to characterize the phase structures, emission spectrum and surface morphologies, respectively. In addition, the water-resistance stability of the phosphor was tested by soaking the phosphor into deionized water. The results showed that the phase structures remained the same as the uncoated phosphor and the po- sition of the fluorescence peak did not shift after surface treatment. Results showed that the water-resistance stability of the phosphor was improved to some degree. Moreover, the photoluminescence （PL） intensity of the coated phosphors reduced less than 10% of the original phosphors. Though being soaked into deionized water for 50 h, the phosphor coated with 10 wt.%SiO2-10 wt.%PMMA retained 85.9% PL intensity compared to that of the uncoated phosphor. Therefore, it could be concluded that the 10 wt.%SiO2-10 wt.%PMMA composite coating effectively improved the phosphor water resistance and retained its good optical properties.

关键词： 2+ 2+CaS:Eu ,Sin2+ redphosphor SlO2-PMMAcompositecoating photouminescence pHvaoue water-resistancestabioity rareearths

The enhanced low dose rate sensitivity of a linear voltage regulator with different biases

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Journal of Semiconductors 2011年第3期32卷 71-74页

作者：王义元陆妩任迪远郭旗余学峰高博 xinjiang Technical Institute of Physics & Chemistry Chinese Academy of Sciences xinjiang key laboratory of Electronic information Materials and Devices Graduate University of the Chinese Academy of Sciences

A linear voltage regulator was irradiated by ^（60）Coγat high and low dose rates with two bias conditions to investigate the dose rate *** devices exhibit enhanced low dose rate sensitivity（ELDRS） under both biases. Comparing the enhancement factors between zero and working biases,it was found that the ELDRS is more severe under zero bias *** confirms that the ELDRS is related to the low electric field in a bipolar structure. The reasons for the change in the line regulation and the maximum drive current were analyzed by combining the principle of linear voltage regulator with irradiation response of the transistors and error amplifier in the regulator. This may be helpful for designing radiation hardened devices.

关键词： linear voltage regulator ELDRS bias dependence

Dose-rate dependence of optically stimulated luminescence signal

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Journal of Semiconductors 2010年第10期31卷 1-4页

作者：卫平强陈朝阳范艳伟孙玉润赵云 xinjiang Technical Institute of Physics and Chemistry Chinese Academy of Sciences xinjiang key laboratory of Electronic information Materials and Devices Graduate University of the Chinese Academy of Sciences

Optically stimulated luminescence （OSL） is the luminescence emitted from a semiconductor during its exposure to light. The OSL intensity is a function of the total dose absorbed by the sample. The dose-rate dependence of the OSL signal of the semiconductor CaS doped Ce and Sm was studied by numerical simulation and experiments. Based on a one-trap/one-center model, the whole OSL process was represented by a series of differential equations. The dose-rate properties of the materials were acquired theoretically by solving the equations. Good coherence was achieved between numerical simulation and experiments, both of which showed that the OSL signal was independent of dose rate. This result validates that when using OSL as a dosimetry technique, the dose-rate effect can be neglected.

关键词： optically stimulated luminescence dose-rate numerical simulation radiation measurement

Dose-rate effects of p-channel metal oxide semiconductor field-effect transistors at various biasing conditions

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Journal of Semiconductors 2010年第5期31卷 55-58页

作者：兰博郭旗孙静崔江维李茂顺陈睿费武雄赵云 xinjiang Technical Institute of Physics and Chemistry Chinese Academy of Sciences xinjiang key laboratory of Electronic information Materials and Devices Graduate University of the Chinese Academy of Sciences

The total-dose response and annealing effect of p-channel metal oxide semiconductor field-effect transistors （PMOSFETs） were investigated at various dose rates and biasing *** results show that the shift of threshold voltage is more obvious when the dose rate is *** the various dose rates and biasing conditions,some have exhibited a time-dependent effect and others showed enhanced low-dose-rate sensitivity（ELDRS）.Finally,using the subthreshold-separating method,the threshold-voltage shift is separated into shifts due to interface states and oxidetrapped charges,and the underlying mechanisms of the observed effects are *** has been indicated that the ELDRS effect results from the different quantities of the interface states generated at high and low dose rates.

关键词： PMOSFETs bias ELDRS TDE interface states oxide-trapped charge

Double humps and radiation effects of SOI NMOSFET

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Journal of Semiconductors 2011年第6期32卷 44-46页

作者：崔江维余学峰任迪远何承发高博李明卢健 xinjiang Technical Institute of Physics & Chemistry Chinese Academy of Sciences xinjiang key laboratory of Electronic information Materials and Devices Graduate University of the Chinese Academy of Sciences

Radiation experiments have been carried out with a SOI *** behavior of double humps was studied under *** characterization of the hump was *** results have shown that the shape of the hump changed along with the total dose and the reason for this was *** addition,the coupling effect of the back-gate transistor was more important for the main transistor than the parasitic transistor.

关键词： SOI radiation double humps

Total ionizing dose effects on 12-bit CBCMOS digital-to-analog converters

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Journal of Semiconductors 2013年第12期34卷 53-59页

作者：王信陆妩郭旗吴雪席善斌邓伟崔江维张晋新 xinjiang Technical Institute of Physics & Chemistry Chinese Academy of Sciences xinjiang key laboratory of Electronic information Materials and Devices University of Chinese Academy of Sciences

A digital-to-analog converter （DAC） in CBCMOS technology was irradiated by 60Co F-rays at various dose rates and biases for investigating the ionizing radiation response of the DAC. The radiation responses show that the function curve and the key electrical parameters of the DAC in CBCMOS technology are sensitive to total dose and dose rates. Under different bias conditions, the radiation failure levels were different, and the radiation damage under operation bias conditions was more severe. Finally, test results were preliminarily analyzed by relating the failure mode to DAC architecture and process technology.

关键词： digital-to-analog CBCMOS dose rate effect ionizing radiation

Handling OOV Words in Mandarin Spoken Term Detection with an Hierarchical n-Gram Language Model

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Chinese Journal of Electronics 2017年第6期26卷 1239-1244页

作者： WANG Xuyang ZHANG Pengyuan NA Xingyu PAN Jielin YAN Yonghong The key laboratory of Speech Acoustics and Content Understanding Chinese Academy of Sciences xinjiang laboratory of Minority Speech and Language information Processing Chinese Academy of Sciences

In this paper, an hierarchical n-gram Language model(LM) combining words and characters is explored to improve the detection of Out-of-vocabulary(OOV) words in Mandarin Spoken term detection(STD).The hierarchical LM is based on a word-level LM, with a character-level LM estimating probabilities of OOV words in a class-based way. The region containing OOV words in the sentence to be decoded is detected with the help of the word-level LM and the probabilities of OOV words are derived from the character-level LM. The implementation of the proposed approach is based on a dynamic decoder. The proposed approach is evaluated in terms of Actual term weighted value(ATWV) on two Mandarin data sets. Experiment results show that more than 10% relative improvement for OOV word detection is achieved on both sets. In addition, the detection of In-vocabulary(IV) words is barely influenced as well.

关键词： Spoken term detection(STD) Language model(LM) Out-of-vocabulary(OOV) words

Effects of orientation of substrate on the enhanced low-dose-rate sensitivity (ELDRS) in NPN transistors

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Chinese Physics C 2011年第2期35卷 169-173页

作者：陆妩郑玉展王义元任迪远郭旗王志宽王健安 xinjiang Technical Institute of Physies & Chemistry Chinese Academy of Sciences xinjiang key laboratory of information Materials and Devices Graduate University of Chinese Academy of Sciences State key laboratory of Analog Integrated Circuits

The radiation effects and annealing characteristics of two types of domestic NPN bipolar junction transistors, fabricated with different orientations, were investigated under different dose-rate irradiation. The experimental results show that both types of the NPN transistors exhibit remarkable Enhanced Low-Dose-Rate Sensitivity （ELDRS）. After irradiation at high or low dose rate, the excess base current of NPN transistors obviously increased, and the current gain would degrade rapidly. Moreover, the decrease of collector current was also observed. The NPN transistor with （111} orientation was more sensitive to ionizing radiation than that with （100} orientation. The underlying mechanisms of various experimental phenomena are discussed in detail in this paper.

关键词： NPN bipolar junction transistors 60Co-γ irradiation ELDRS orientation of substrate

Preparation and thermal-sensitive characteristic of copper doped n-type silicon material

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Journal of Semiconductors 2015年第1期36卷 32-35页

作者：范艳伟周步康王军华陈朝阳常爱民 key laboratory of Functional Materials and Devices for Special Environments of CAS xinjiang key laboratory of Electronic information Materials and Devices xinjiang Technical Institute of Physics & Chemistry of CAS University of Chinese Academy of Sciences

Copper doped n-type single-crystal silicon materials are prepared by a high temperature diffusion process. The electrical and thermal-sensitive characteristic of materials is investigated under different experimental conditions. The results show that the maximum resistivity of 46.2 Ω·cm is obtained when the sample is treated at 1200℃ for 2 h with the surface concentration of the copper dopant source being 1.83×10^7mol/cm^2. The copper doped n-type silicon material presents a negative temperature-sensitive characteristic and the B values are about 3010–4130 K.

关键词： single-crystal silicon deep level impurity copper