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Space advanced technology demonstration satellite

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Science China(Technological Sciences) 2024年第1期67卷 240-258页

作者： ZHANG xiaoFeng CHEN Wen ZHU xiaoCheng MENG Na HE JunWang BI xingZi ZHANG YongHe SHI Qi LI Fei LIU Rui FENG ZhengGong LIU Liu LI JinSong WU HaiChen XU Dongxiao LI TaiJie HUANG JiangJiang LIU Shuo LI TianTong YU xianSheng GAO Yang ZHOU Heng BAN HanYu ZHANG YanLi ZHANG YueTing YANG YingQuan HE Tao DUAN XuLiang CHEN xin WANG YaMin SUN AnTai ZHANG Kuoxiang SUN Ying WANG YaoBin FAN ChengCheng xiONG ShaoLin LI xinQiao WEN xiangYang LING Zhixing SUN xiaoJin ZHANG Chen BAI xianYong WANG ZhanShan DENG YuanYong TIAN Hui YANG JianFeng XUE HongBo SANG Peng LIU JinGuo ZHENG HuiLong ZHU xiang HE JianWu LI Hui XU Luxiang XU ShuYan CHEN WenWu LIU ZhenDong WANG ZhaoLi MAO xiangLong GAO Rong LI ZongXuan DING GuoPeng WANG xinYu DOU RunJiang WENG LuBin LUO Hao WANG YaPing LIANG xianFeng FANG ZiRuo Innovation Academy for Microsatellites Chinese Academy of SciencesShanghai 201203China Institute of High Energy Physics Chinese Academy of SciencesBeijing 100049China National Astronomical Observatory of China Beijing 100101China Shanghai Institute of Technical Physics Chinese Academy of SciencesShanghai 200083China Institute of Precision Optical Engineering School of Physics Science and EngineeringTongji UniversityShanghai 200092China School of Earth and Space Sciences Peking UniversityBeijing 100871China xi’an Institute of Optics and Precision Mechanics Chinese Academy of SciencesXi’an 710119China National Space Science Center Chinese Academy of SciencesBeijing 100190China Shenyang Institute of Automation Chinese Academy of SciencesShenyang 110016China Institute of Engineering Thermophysics Chinese Academy of SciencesBeijing 100190China Institute of Mechanics Chinese Academy of SciencesBeijing 100190China Shanghai Institute of Organic Chemistry Chinese Academy of SciencesShanghai 200032China Hangzhou Institute for Advanced Study University of Chinese Academy of SciencesHangzhou 310024China Nanyang Technological University Singapore 569830Singapore Dalian Institute of Chemical Physics Chinese Academy of SciencesDalian 116023China Technical Institute of Physics and Chemistry Chinese Academy of SciencesBeijing 100049China Changchun Institute of Optics Fine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033China Institute of semiconductors Chinese Academy of SciencesBeijing 100083China Institute of Automation Chinese Academy of SciencesBeijing 100190China School of Aeronautics and Astronautics Zhejiang UniversityHangzhou 310058China

The Space Advanced Technology demonstration satellite(SATech-01),a mission for low-cost space science and new technology experiments,organized by Chinese Academy of Sciences(CAS),was successfully launched into a Sun-synchronous orbit at an altitude of~500 km on July 27,2022,from the Jiuquan Satellite Launch *** as an experimental platform for space science exploration and the demonstration of advanced common technologies in orbit,SATech-01 is equipped with 16 experimental payloads,including the solar upper transition region imager(SUTRI),the lobster eye imager for astronomy(LEIA),the high energy burst searcher(HEBS),and a High Precision Magnetic Field Measurement System based on a CPT Magnetometer(CPT).It also incorporates an imager with freeform optics,an integrated thermal imaging sensor,and a multi-functional integrated imager,*** paper provides an overview of SATech-01,including a technical description of the satellite and its scientific payloads,along with their on-orbit performance.

关键词： SATech-01 spacecraft design scientific instruments on-orbit performance

A Widely Tunable Photonic-Assisted Microwave Notch Filter with High Linearity Using a Dual-Parallel Mach-Zehnder Modulator

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Chinese Physics Letters 2016年第10期33卷 57-61页

作者：王欣邓晔王文亭袁海庆白金花刘宇 xi'an Institute of Optics and Precision Mechanics Chinese Academy of Sciences Institute of semiconductors Chinese Academy of Sciences University of Chinese Academy of Sciences

A widely tunable microwave photonic （MWP） notch filter with high linearity based on a dual-parallel Mach- Zehnder modulator （DPMZM） is proposed and experimentally demonstrated. The motivation of this work lies in the fact that the MWP notch filter previously reported has nonlinear distortions generally induced by the nonlinear property of electro-optic devices. In this scheme, even-order modulated sidebands at the DPMZM output are effectively suppressed by properly adjusting bias voltages of the DPMZM, which are the dominant factor to induce the nonlinear distortions into the MWP notch filter. The proposed scheme is theoretically analyzed and experimentally verified.

关键词： of MZM with MWP is SFDR OSSB in that

Design and Fabrication of a 400 GHz InP-Based Arrayed Waveguide Grating with Flattened Spectral Response

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Chinese Physics Letters 2015年第5期32卷 55-58页

作者： ZHANG xi-Lin LIU Song Tao LU Dan ZHANG Rui-Kang JI Chen Key Laboratory of semiconductors Materials Institute of SemiconductorsChinese Academy of Sciences

A four-channel 400 GHz channel spacing InP-based arrayed waveguide grating with a flattened wavelength re- sponse by employing a multimode interference coupler at the input waveguide of the filter is prepared. The fabricated devices show a flattened spectral response with a broadened 3-dB bandwidth up to 3.5 nm, interchan- nel non-uniformity of 〈0. 7dB and excellent match to the simulation results.

关键词： AWG InP Design and Fabrication of a 400 GHz InP-Based Arrayed Waveguide Grating with Flattened Spectral Response

Highly efficient solution-processed organic photovoltaics enabled by improving packing behavior of organic semiconductors

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Science China Chemistry 2024年第3期67卷 890-897页

作者： xinyue Cui Hongxiang Li Hao Lu Yuqiang Liu Guangliu Ran Rui Liu Huarui Zhang Xueqing Ma Dawei Li Yi Lin Jifa Yu Wenkai Zhang Lei Cai Yahui Liu Pei Cheng Andong Zhang Zaifei Ma Guanghao Lu Zhishan Bo College of Textiles and Clothing State Key Laboratory of Bio-fibers and Eco-textilesQingdao UniversityQingdao 266071China State Key Laboratory of Polymer Materials Engineering College of Polymer Science and EngineeringSichuan UniversityChengdu 610065China Department of Physics and Applied Optics Beijing Area Major Laboratory Center for Advanced Quantum StudiesBeijing Normal UniversityBeijing 100875China Shandong Province Key Laboratory of Medical Physics and Image Processing Technology School of Physics and ElectronicsShandong Normal UniversityJinan 250014China Beijing Key Laboratory of Energy Conversion and Storage Materials College of ChemistryBeijing Normal UniversityBeijing 100875China Center for Advanced Low-Dimension Materials State Key Laboratory for Modification of Chemical Fibers and Polymer MaterialsCollege of Materials Science and EngineeringDonghua UniversityShanghai 201620China Frontier Institute of Science and Technology Xi'an Jiaotong UniversityXi'an 710054China

Solution processability is a unique property of organic semiconductors. The compact and regular π-π stacking between molecules is paramount in the performance of organic optoelectronic devices. However, it is still a challenge to improve their stacking quality without sacrificing the solution-processability from the aspect of materials design. Here, delicately engineered additives are presented to promote the formation of ordered aggregation of conjugated molecules by regulating their nucleation and growth dynamics. Intriguingly, the long-chain BTP-eC9-4F molecules can realize ordered aggregation comparable to short-chain ones without sacrificing processability. The domain size of BTP-eC9-4F aggregation is enlarged from 24.2 to 32.2 nm in blend *** exciton diffusion and charge transport become faster, contributing to the suppression of recombination losses. As a result, a power conversion efficiency of 19.2% is achieved in D18:BTP-eC9-4F based organic photovoltaics. Our findings demonstrate a facile strategy to improve the packing quality of solution-processed organic semiconductors for high-efficiency photovoltaics and beyond photovoltaics.

关键词： organic semiconductor organic photovoltaic charge transport solution processability

Comparison of GaN/AlGaN/AlN/GaN HEMTs Grown on Sapphire with Fe-Modulation-Doped and Unintentionally Doped GaN Buffer:Material Growth and Device Fabrication

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Chinese Physics Letters 2016年第11期33卷 99-103页

作者：巩稼民王权闫俊达刘峰奇冯春王晓亮王占国 School of Electronic Engineering Xi'an University of Posts and Telecommunications Key Laboratory of Semiconductor Materials Science Beijing Key Laboratory of Low Dimensional Semiconductor Materials and DevicesInstitute of SemiconductorsChinese Academy of Sciences

AlGaN/GaN high electron mobility transistors （HEMTs） grown on Fe-modulation-doped （MD） and unintentionally doped （UID） GaN buffer layers are investigated and compared. Highly resistive GaN buffers （10^9Ω·cm） are induced by individual mechanisms for the electron traps＇ formation： the Fe MD buffer （sample A） and the UID buffer with high density of edge-type dislocations （7.24×10^9cm^-2, sample B）. The 300K Hall test indicates that the mobility of sample A with Fe doping （2503cm^2V^-1s^-1） is much higher than sample B （1926cm^2V^-1s^-1） due to the decreased scattering effect on the two-dimensional electron gas. HEMT devices are fabricated on the two samples and pulsed I–V measurements are conducted. Device A shows better gate pinch-off characteristics and a higher threshold voltage （-2.63V） compared with device B （-3.71V）. Lower gate leakage current ｜IGS｜ of device A （3.32×10^-7A） is present compared with that of device B （8.29×10^-7A）. When the off-state quiescent points Q_2 （V GQ2=-8V, V DQ2=0V） are on, V th hardly shifts for device A while device B shows ＋0.21V positive threshold voltage shift, resulting from the existence of electron traps associated with the dislocations in the UID-GaN buffer layer under the gate. Under pulsed I–V and transconductance G m–V GS measurement, the device with the Fe MD-doped buffer shows more potential in improving reliability upon off-state stress.

关键词： GaN in HEMT is Comparison of GaN/AlGaN/AlN/GaN HEMTs Grown on Sapphire with Fe-Modulation-Doped and Unintentionally Doped GaN Buffer:Material Growth and Device Fabrication of Fe with on

The Growth and Fabrication of InGaN/GaN Multi-Quantum Well Solar Cells on Si(111) Substrates

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Chinese Physics Letters 2013年第6期30卷 216-219页

作者： LI Zhi-Dong xiAO Hong-Ling WANG xiao-Liang WANG Cui-Mei DENG Qing-Wen JING Liang DING Jie-Qin WANG Zhan-Guo HOU Xun Key Lab of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083 Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Beijing 100083 ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics Beijing 100083 xi’an Jiaotong University Xi’an 710049

Metalorganic chemical vapor deposition of a crack-free mirror-like surface of InGaN/GaN MQWs on Si(111)substrate is demonstrated,and an InGaN/GaN MQWs solar cell device is *** response measurement of the solar cell devices shows that the fill factor FF=49.4%,open circuit voltage V_(oc)=0.32 V,and short circuit current J_(sc)=0.07 mA/cm^(2),under AM 1.5 G *** order to analyze the influence of material quality on the performance of solar cells,XRD,SEM and Raman scattering experiments are carried *** is found that insertion of a proper top AlN layer can effectively improve the material quality,and therefore enhance the photovoltaic performance of the fabricated device.

关键词： InGaN/GaN Si(111) scattering

The Valence Band Offset of an Al_(0.17)Ga_(0.83)N/GaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy

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Chinese Physics Letters 2013年第5期30卷 124-126页

作者： WAN xiao-Jia WANG xiao-Liang xiAO Hong-Ling WANG Cui-Mei FENG Chun DENG Qing-Wen QU Shen-Qi ZHANG Jing-Wen HOU Xun CAI Shu-Jun FENG Zhi-Hong Key Lab of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083 ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics Beijing 100083 School of Electronic and Information Engineering Xi’an Jiaotong UniversityXi’an 710049 National Key Lab of ASIC Shijiazhuang 050051

The valence band offset(VBO)of an Al_(0.17)Ga_(0.83)N/GaN heterojunction is determined to be 0.13±0.07 eV by x-ray photoelectron *** the obtained VBO value,the conduction band offset(CBO)of~0.22 eV is *** results ind... 详细信息

关键词： N/Ga heterojunction spectroscopy

Temperature dependence on the electrical and physical performance of InAs/AlSb heterojunction and high electron mobility transistors

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Chinese Physics B 2018年第9期27卷 489-494页

作者： Jing Zhang Hongliang Lv Haiqiao Ni Zhichuan Niu Yuming Zhang School of Microelectronics Xidian University and Key Laboratory of Wide Band-Gap Semiconductor Materials and DevicesXi＇an 710071China State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China

In this report, the effect of temperature on the In As/Al Sb heterojunction and high-electron-mobility transistors（HEMTs） with a gate length of 2 μm are discussed comprehensively. The results indicate that device performance is greatly improved at cryogenic temperatures. It is also observed that the device performance at 90 K is significantly improved with 27% lower gate leakage current, 12% higher maximum drain current, and 22.5% higher peak transconductance compared to 300 K. The temperature dependence of mobility and the two-dimensional electron gas concentration in the In As/Al Sb heterojunction for the temperature range 90 K-300 K is also investigated. The electron mobility at 90 K（42560 cm2/V·s）is 2.5 times higher than its value at 300 K（16911 cm^2/V·s） because of the weaker lattice vibration and the impurity ionization at cryogenic temperatures, which corresponds to a reduced scattering rate and higher mobility. We also noted that the two-dimensional electron gas concentration decreases slightly from 1.99 × 10^（12） cm^（-2） at 300 K to 1.7 × 10^（12） cm^（-2） at 90 K with a decrease in temperature due to the lower ionization at cryogenic temperature and the nearly constant ？Ec.

关键词： temperature mobility two-dimensional electron gas InAs/AlSb HEMT

Comparison of short period InAs/GaSb superlattices on GaSb and GaAs substrates

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Science China(Technological Sciences) 2009年第1期52卷 23-27页

作者： GUO Jie CHEN HuiJuan SUN WeiGuo HAO RuiTing XU YingQiang NIU ZhiChuan Material School NorthWest Polytechnical UniversityXi’an 610000China Luoyang Optical Electronics Center Luoyang 471009China Institute of semiconductors Chinese Academy of SciencesBeijing 100083China

Type II superlattices (SLs) short period InAs(4ML)/GaSb(8ML) were grown by molecular-beam epitaxy on lattice-mismatched GaAs substrates and on GaSb substrates. A smooth GaSb epilayer was formed on GaAs substrates by inserting mulit-buffer layers including an interfacial misfit mode AlSb quantum dot layer and AlSb/GaSb superlattices smooth layer. SLs grown on GaAs substrates (GaAs-based SLs) showed well-resolved satellite peaks in XRD. GaSb-based SLs with better structural quality and smoother surface showed strong photoluminescence at 2.55 μm with a full width at half maximum (FWHM) of 20 meV, narrower than 31 meV of GaAs-based SLs. Inferior optical absorption of GaAs-based SL was observed in the range of 2―3 μm. Photoresponse of GaSb-based SLs showed the cut-off wavelength at 2.6 μm.

关键词： InAs/GaSb superlattice substrates infrared detector