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Science China(Information Sciences) 2024年第2期67卷 279-290页

作者： Xingxing GUO Shuiying XIANG Xingyu CAO Biling GU state key laboratory of Integrated Service Networks Xidian University state key Discipline laboratory of wide bandgap semiconductor technology School of MicroelectronicsXidian University

In this paper, we propose and demonstrate experimentally and numerically a hierarchical timedelay optical reservoir computing(RC) system based on cascaded vertical-cavity surface-emitting lasers(VCSELs) with feedback and multiple injections. The prediction performance characteristics of the hierarchical time-delay RC system based on cascaded VCSELs under different reservoir layers are compared.Evidently, the prediction performance of the hierarchical time-delay RC system is first improved and saturates as the number of reservoir layers increases. Besides, the impacts of key factors on predicting the hierarchical time-delay RC system are also analyzed in detail experimentally and numerically. This proposed hierarchical time-delay RC system based on VCSELs is useful for the further development of RC systems and may be beneficial to improve the ability of RC systems to solve more complex problems.

关键词： vertical-cavity surface-emitting laser reservoir computing neuromorphic photonics time-delay system information processing

Performance improvement of β-Ga2O3 SBD-based rectifier with embedded microchannels in ceramic substrate

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Science China(Information Sciences) 2024年第5期67卷 341-342页

作者： Wen HONG Chao ZHANG Fang ZHANG Xuefeng ZHENG Xiaohua MA Yue HAO state key laboratory of wide-bandgap semiconductor Devices and Integrated technology School of MicroelectronicsXidian University

With the development of integrated circuits, there is a growing demand for higher power devices [1]. Gallium oxide（Ga2O3） holds promise for high power devices due to its wide bandgap and high breakdown electric field strength [2].However, its low thermal conductivity induces severe selfheating effects, limiting its performance and reliability.Therefore, effective thermal management techniques are urgently needed for Ga2O3devices.

关键词： Gallium compounds

Realtime observation of “spring fracture” like AlGaN/GaN HEMT failure under bias

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Science China(Information Sciences) 2024年第1期67卷 303-305页

作者： Qing ZHU Zhenni WANG Yuxiang WEI Ling YANG Xiaoli LU Jiejie ZHU Peng ZHONG Yimin LEI Xiaohua MA school of microelectronics Xidian University state key Discipline laboratory of wide bandgap semiconductor technology Xidian University school of Advanced Materials and Nanotechnology Xidian University

The AlGaN/GaN HEMTs have been considered promising candidates for high-frequency and high-power applications,while the reliability issues greatly limit the commercialization of AlGaN/GaN HEMTs. In the past, the research on the reliability of devices was often based on Raman spectroscopy, cathodoluminescence, and TEM after failure of the devices, which is often considered to be the laborious and complicated “archaeological” kind of analysis [1].

关键词：

High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz

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Science China(Information Sciences) 2024年第6期67卷 459-460页

作者： Hanghai DU Lu HAO Zhihong LIU Zeyu SONG Yachao ZHANG Kui DANG Jin ZHOU Jing NING Zan LI Jincheng ZHANG Yue HAO state key laboratory of wide bandgap semiconductor Devices and Integrated technology School of MicroelectronicsXidian University Guangzhou wide bandgap semiconductor Innovation Center Guangzhou Institute of TechnologyXidian University state key laboratory of Integrated Services Networks School of Communication EngineeringXidian University

关键词：

High-Al-composition AlGaN/GaN MISHEMT on Si with fof 320 GHz

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Science China(Information Sciences) 2024年

作者： Hanghai DU Lu HAO Zhihong LIU Zeyu SONG Yachao ZHANG Kui DANG Jin ZHOU Jing NING Zan LI Jincheng ZHANG Yue HAO Guangzhou wide bandgap semiconductor Innovation Center Guangzhou Institute of TechnologyXidian University state key laboratory of Integrated Services Networks School of Communication EngineeringXidian University state key laboratory of wide bandgap semiconductor Devices and Integrated technology School of MicroelectronicsXidian University

GaN-based metal-insulator-semiconductor high-electronmobility-transistors (MISHEMTs) have many excellent performances compared with the Si and GaA s counterparts,and are prime candidates for applications in communication base stations, radars, and satellites. Most of the current GaNRF transistors for the below Ka-band applications adopt a conventional AlGaN/GaN heterostructure with a typical Al-composition from 0.25 to 0.3 for the barrier layer. For higher frequency applications, the thin barrier AlN/GaN heterojunction or InA lN/GaN heterojunction is preferred [1].

关键词：

高功率密度外延的单晶金刚石制备高性能辐射探测器（英文）

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Science China Materials 2024年

作者：丁森川张金风苏凯任泽阳陈军飞杨智清张进成郝跃 state key laboratory of wide-bandgap semiconductor Devices and Integrated technology School of Microelectronics Xidian University Xidian-Wuhu Research Institute

辐射探测器是用来研究超宽禁带半导体金刚石中载流子动力学的重要表征工具.本文采用微波等离子体化学气相沉积（MPCVD）方法在高温高压（HTHP）金刚石衬底上制备了高质量的单晶金刚石.我们通过压缩等离子体球来提高微波功率密度,优化了...

辐射探测器是用来研究超宽禁带半导体金刚石中载流子动力学的重要表征工具.本文采用微波等离子体化学气相沉积（MPCVD）方法在高温高压（HTHP）金刚石衬底上制备了高质量的单晶金刚石.我们通过压缩等离子体球来提高微波功率密度,优化了等离子体中的碳氢（C/H）比,并显著降低了金刚石外延层中的杂质和位错含量.（004）面X射线衍射摇摆曲线的半高宽（FWHM）仅为15弧秒,在室温下的光致发光光谱中没有检测到杂质发光带.使用制备的200μm厚的外延金刚石膜制成的辐射探测器可对α-粒子响应,其电子的电荷收集效率为97.03%,能量分辨率为2.1%,空穴的电荷收集效率和能量分辨率为97.86%和1.5%.此外,电子和空穴的迁移率和寿命的乘积分别达到8×1 0-5和4.1×10-4cm2V-1.此方法有望满足商用金刚石辐射探测器对性能和成本控制的严苛要求.

关键词：

Room-temperature ferromagnetism and piezoelectricity in metalfree 2D semiconductor crystalline carbon nitride

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Nano Research 2024年第6期17卷 5670-5679页

作者： Yong Wang Dingyi Yang Wei Xu Yongjie Xu Yu Zhang Zixuan Cheng Yizhang Wu Xuetao Gan Wei Zhong Yan Liu Genquan Han Yue Hao wide bandgap semiconductor technology disciplines state key laboratory School of MicroelectronicsAcademy of Advanced Interdisciplinary ResearchXidian UniversityXi’an 710071China Emerging Device and Chip laboratory Hangzhou Institute of TechnologyXidian UniversityHangzhou 311200China INRS Centre for Energy Materials and Telecommunications1650 Boul.Lionel BouletVarennesQC J3X 1P7Canada National laboratory of Solid state Microstructures Collaborative Innovation Center of Advanced Microstructures and Jiangsu Provincial Key Laboratory for NanotechnologyNanjing UniversityNanjing 210093China school of Education Jiangsu Open UniversityNanjing 210036China Department of Physics Shaanxi University of Science and TechnologyXi’an 710021China Department of Applied Physical Sciences The University of North Carolina at Chapel HillChapel HillNC 27514USA key laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technologyand Shaanxi Key Laboratory of Optical Information TechnologySchool of Physical Science and TechnologyNorthwestern Polytechnical UniversityXi'an 710129 China

Two-dimensional(2D)materials that combine ferromagnetic,semiconductor,and piezoelectric properties hold significant potential for both fundamental research and spin electronic devices.However,the majority of reported 2D ferromagnetic-semiconductor-piezoelectric materials rely on d-electron systems,which limits their practical applications due to a Curie temperature lower than room temperature(RT).Here,we report a high-crystallinity carbon nitride(CCN)material based on sp-electrons using a chemical vapor deposition *** exhibits a band gap of 1.8 eV and has been confirmed to possess substantial in-plane and out-of-plane piezoelectricity.Moreover,we acquired clear evidences of ferromagnetic behavior at room temperature.Extensive structural characterizations combined with theoretical calculations reveal that incorporating structural oxygen into the highly ordered heptazine structure causes partial substitution of nitrogen sites,which is primarily responsible for generating room-temperature ferromagnetism and piezoelectricity.As a result,the strain in wrinkles can effectively modulate the domain behavior and piezoelectric potential at room temperature.The addition of RT ferromagnetic-semiconductor-piezoelectric material based on sp-electrons to the family of two-dimensional materials opens up numerous possibilities for novel applications in fundamental research and spin electronic devices.

关键词： crystallinity carbon nitride room-temperature ferromagnetism piezoelectricity magnetic force microscopy density functional theory(DFT)calculations

Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

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Chinese Physics B 2024年第1期33卷 554-562页

作者：冯亚辉郭红霞刘益维欧阳晓平张晋新马武英张凤祁白如雪马晓华郝跃 state key laboratory of wide bandgap semiconductor Devices School of MicroelectronicsXidian UniversityXi'an 710071China school of Materials Science and Engineering Xiangtan UniversityXiangtan 411105China school of Space Science and technology Xidian UniversityXi'an 710071China state key laboratory of Experimental Simulation and Effects of Strong Pulse Radiation Northwest Institute of Nuclear TechnologyXi'an 710024China

The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive position of the Si Ge HBT device is the emitter center, where the protons pass through the larger collector-substrate(CS) junction. Furthermore, in this work the experimental studies are also carried out by using 100-Me V proton. In order to consider the influence of temperature on SEE, both simulation and experiment are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current decreases significantly.Notably, at the same proton flux, there is only one single event transient(SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the experimental results of 100-Me V protons. To further evaluate the tolerance of the device, the influence of proton on Si Ge HBT after gamma-ray(^(60)Coγ) irradiation is investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.

关键词： silicon–germanium heterojunction bipolar transistor(Si Ge HBT) 100-Me V proton technology computer-aided design(TCAD) single event effect(SEE)

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Experimental demonstration of photonic spike-timing-dependent plasticity based on a VCSOA

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Science China(Information Sciences) 2022年第8期65卷 228-237页

作者： Ziwei SONG Shuiying XIANG Xingyu CAO Shihao ZHAO Yue HAO state key laboratory of Integrated Service Networks Xidian University state key Discipline laboratory of wide bandgap semiconductor technology School of MicroelectronicsXidian University

We experimentally design two photonic spike-timing-dependent plasticity(STDP) schemes based on a single vertical-cavity semiconductor optical amplifier(VCSOA) and demonstrate the photonic implementation of STDP characteristics. In the first scheme, a single-polarized optical pulse train is injected into the VCSOA, in which a pair of optical pulses with a time difference is designed to emulate the pre-synaptic and post-synaptic spikes. In the second scheme, dual-polarized optical pulses emulating the pre-synaptic and post-synaptic spikes are injected into the single VCSOA. Furthermore, the effects of the initial wavelength detuning and the power of the input optical pulse on the STDP curve are analyzed. The proposed photonic STDP schemes based on a single VCSOA need relatively low bias current and power consumption, and thus,are ideal optical synaptic devices forming key components in the construction of the photonic neuromorphic computing system.

关键词： neuromorphic photonics vertical-cavity semiconductor optical amplifier spike-timing-dependent plasticity optical neural systems pulsed optical injection

Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light

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Science China(Information Sciences) 2023年第2期66卷 191-197页

作者： Yilin CHEN Qing ZHU Jiejie ZHU Minhan MI Meng ZHANG Yuwei ZHOU Ziyue ZHAO Xiaohua MA Yue HAO school of Advanced Materials and Nanotechnology Xidian University state key Discipline laboratory of wide bandgap semiconductor technology Xidian University school of microelectronics Xidian University Xidian University Guangzhou Institute of technology

In this study, the negative shift of the threshold voltage(VTH) and degradation of the leakage current triggered by the ultraviolet(UV) light(375 nm) have been investigated when a large reverse gateto-drain voltage was applied to a Si3N4/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor. However, an increase in leakage was not observed under the blue light or in the dark. The holes generated in the channel by UV illumination were attracted by the gate electrode owing to the reverse voltage.During the movement, holes were captured by border traps at very deep levels in the Si3N4near AlGaN,leading to a negative shift of VTH that was difficult to recover. According to the simulation based on Silvaco Atlas TCAD, the trapped holes significantly increased the electric field strength in Si3N4. Therefore, as the injection barrier for electrons from the gate became thinner, it was easier for electrons to tunnel through the Si3N4. Finally, for the degraded devices under the UV light stress, Fowler-Nordheim tunneling was the dominant leakage conduction mechanism, as exhibited by the current density versus electric field strength curve fitting. In addition, the holes with high energies collided with Si3N4and generated new defects at the edge of the gate near the drain side.

关键词： GaN MIS HEMTs off-state stress UV light hole trapping