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Emerging noble metal-free Mo-based bifunctional catalysts for electrochemical energy conversion

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Nano Research 2022年第12期15卷 10234-10267页

作者： Saswati Santra Verena Streibel Ian D.Sharp walter schottky institute and Physics Department Technical University of MunichAm Coulombwall 485748GarchingGermany

The transition from a global economy dependent on fossil fuels to one based on sustainable energy conversion technologies presents the primary challenge of the *** water electrolyzers and metal-air batteries with earth-abundant bifunctional transition metal(TM)catalysts that efficiently catalyse the hydrogen and oxygen evolution reactions(HER and OER)and the oxygen reduction and evolution reactions(ORR and OER),respectively,reduces the cost and system complexity,while also providing prospects for accelerated scaling and sustainable material *** the TMs,earth-abundant molybdenum(Mo)-based multifunctional catalysts are especially promising and have attracted considerable attention in recent *** with a brief introduction to HER,OER,and ORR mechanisms and parameters governing their bifunctionality,this comprehensive review focuses on such Mo-based multifunctional *** review and discuss recent progress achieved through the formation of Mo-based compounds,heterostructures,and nanoscale composites,as well as by doping,defect engineering,and nanoscale sculpting of Mo-based *** systems discussed in detail are based on Mo chalcogenides,carbides,oxides,nitrides,and phosphides,as well as Mo alloys,highlighting specific opportunities afforded by synergistic interactions of Mo with both non-metals and non-noble ***,we discuss the future of Mo-based multifunctional electrocatalysts for HER/OER,ORR/OER,and HER/ORR/OER,analysing emerging trends,new opportunities,and underexplored avenues in this promising materials space.

关键词： molybdenum-based electrocatalysts bifunctional electrocatalysts hydrogen evolution reaction oxygen reduction reaction oxygen evolution reaction

Electrically tunable third-harmonic generation using intersubband polaritonic metasurfaces

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Light(Science & Applications) 2024年第8期13卷 1666-1674页

作者： Seongjin Park Jaeyeon Yu Gerhard Boehm Mikhail A.Belkin Jongwon Lee Department of Electrical Engineering Ulsan National Institute of Science and Technology(UNIST)UlsanRepublic of Korea walter schottky institute Technical University of MunichGarchingGermany

Nonlinear intersubband polaritonic metasurfaces,which integrate giant nonlinear responses derived from intersubband transitions of multiple quantum wells(MQWs)with plasmonic nanoresonators,not only facilitate efficient frequency conversion at pump intensities on the order of few tens of kW cm^(-2)but also enable electrical modulation of nonlinear responses at the individual meta-atom level and dynamic beam *** electrical modulation characteristics of the magnitude and phase of the nonlinear optical response are realized through Stark tuning of the resonant intersubband *** this study,we report,for the first time,experimental implementations of electrical modulation characteristics of mid-infrared third-harmonic generation(THG)using an intersubband polaritonic metasurface based on MQW with electrically tunable third-order nonlinear ***,we achieved a 450%modulation depth of the THG signal,86%suppression of zero-order THG diffraction tuning based on local phase tuning exceeding 180 degrees,and THG beam steering using phase *** work proposes a new route for electrically tunable flat nonlinear optical elements with versatile functionalities.

关键词： tunable tuning pump

Complete thermoelectric benchmarking of individual InSb nanowires using combined micro-Raman and electric transport analysis

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Nano Research 2015年第12期8卷 4048-4060页

作者： Sara Yazji Eric A. Hoffman Daniele Ercolani Francesco Rossella Alessandro Pitanti Alessandro Cavalli Stefano Roddaro Gerhard Abstreiter Lucia Sorba Ilaria Zardo walter schottky institut & Physik Department Technische Universittht MGJnchen Garching D-85748 Germany institute for Advanced Study Technische Universitat Munchen Garching D-8S748 Germany NEST Istituto Nanoscienze-CNR and Scuola Normale Superiore Pisa 1-56127 Italy Department of Physics University of Basel CH-4055 Basel Switzerland

Nanowires （NWs） are ideal nanostructures for exploring the effects of low dimensionality and thermal conductivity suppression on thermoelectric behavior. However, it is challenging to accurately measure temperature gradients and heat flow in such systems. Here, using a combination of spatially resolved Raman spectroscopy and transport measurements, we determine all the thermoelectric properties of single Se-doped InSb NWs and quantify the figure of merit ZT. The measured laser-induced heating in the NWs and associated electrical response are well described by a 1D heat equation model. Our method allows the determination of the thermal contact resistances at the source and drain electrodes of the NW, which are negligible in our system. The measured thermoelectric parameters of InSb NWs agree well with those obtained based on field-effect transistor Seebeck measurements.

关键词： thermoelectric thermoelectric figure ofmerit Raman spectroscopy field-effect transistor measurements nanowire InSb

Correlation ofⅢ/Ⅴsemiconductor etch results with physical parameters of high-density reactive plasmas excited by electron cyclotron resonance

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Plasma Science and Technology 2017年第12期19卷 96-110页

作者： Gerhard FRANZ Ralf MEYER Markus-Christian AMANN Munich University of Applied Sciences Dep.06 34 LothstrasseMunichBavariaD-81730Germany walter schottky institut Technische Universitht Miinchen Am CoulomwallGarchingBavariaD-85748Germany

Reactive ion etching is the interaction of reactive plasmas with surfaces. To obtain a detailed understanding of this process, significant properties of reactive composite low-pressure plasmas driven by electron cyclotron resonance（ECR） were investigated and compared with the radial uniformity of the etch rate. The determination of the electronic properties of chlorine-and hydrogen-containing plasmas enabled the understanding of the pressure-dependent behavior of the plasma density and provided better insights into the electronic parameters of reactive etch gases. From the electrical evaluation of I（V） characteristics obtained using a Langmuir probe,plasmas of different compositions were investigated. The standard method of Druyvesteyn to derive the electron energy distribution functions by the second derivative of the I（V）characteristics was replaced by a mathematical model which has been evolved to be more robust against noise, mainly, because the first derivative of the I（V） characteristics is used. Special attention was given to the power of the energy dependence in the exponent. In particular, for plasmas that are generated by ECR with EM modes, the existence of Maxwellian distribution functions is not to be taken as a self-evident fact, but the bi-Maxwellian distribution was proven for Ar-and Kr-stabilized plasmas. In addition to the electron temperature, the global uniform discharge model has been shown to be useful for calculating the neutral gas temperature. To what extent the invasive method of using a Langmuir probe could be replaced with the noninvasive optical method of emission spectroscopy, particularly actinometry, was investigated,and the resulting data exhibited the same relative behavior as the Langmuir data. The correlation with etchrate data reveals the large chemical part of the removal process—most striking when the data is compared with etching in pure argon. Although the relative amount of the radial variation of plasma density and etch rate

关键词： electron cyclotron resonance high-density plasma Langmuir probe EEDF radial plasma density radial uniformity

Long Wavelength VCSELs for Sensing Applications

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Long Wavelength VCSELs for Sensing Applications

包裹在自组装Si/Ge点超晶格上的声学声子拉曼散射研究(英文)

国际纳光电子学研讨会

作者： Markus-Christian Amann walter schottky institute D-85748 Garching Germany

＜正＞InP-based tunable singlemode VCSELs in the 1.3-2.3μm wavelength range are *** relevant laser parameters are discussed and several applications in trace-gas-sensing are demonstrated.

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来源： cnki会议评论

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光散射学报 2005年第3期 124-126页

作者： P. H. Tan ,D. Bougeard,G. Abstreiter,K. Brunner walter schottky institut Technische Universitaet Muenchen D-85748 Garching Germany State Key Laboratory for Superlattices and Microstructures institute of Semiconductors Chinese Academy of Sciences Beijing 100083 P. R. China walter schottky institut Technische Universitaet Muenchen D-85748 Garching Germany walter schottky institut Technische Universitaet Muenchen D-85748 Garching Germany walter schottky institut Technische Universitaet Muenchen D-85748 Garching Germany

Self-assembled Si/Ge quantum dot (QD) structures have been intensively studied in the last years for potential applications in Si based integrated optoelectronics [1]. For the demand of many technical applications, Ge dot superlattices separated by Si can be deposited in order to increase the optical and electronic response. Raman scattering has proven to be an essential technique to characterize Si/Ge superlattices and Si/Ge dot superlattices [2,3,4]. However, most of Raman studies were concentrated on their optical modes of Si/Ge dot superlattices, but few of them were carried out to characterize the detail structural properties of Si/Ge dot superlattice structures. Here, Self-assembled Si/Ge dot multilayers with small, uncorrelated dots fabricated by molecular beam epitaxy in the Stranski-Krastanov growth mode are studied by Raman scattering of folded longitudinal acoustic (FLA) modes.

关键词： Si/Ge Ge FLA

包裹在自组装Si/Ge点超晶格上的声学声子拉曼散射研究(英文)

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光散射学报 2005年第3期17卷 312-314页

作者： P. H. Tan D. Bougeard G. Abstreiter K. Brunner walter schottky institut Technische Universitaet Muenchen D-85748 Garching GermanyState Key Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 P. R. ChinaWalter Schottky Institut Technische Universitaet Muenchen D-85748 Garching GermanyWalter Schottky Institut Technische Universitaet Muenchen D-85748 Garching GermanyWalter Schottky Institut Technische Universitaet Muenchen D-85748 Garching Germany

关键词： Si/Ge点半导体超晶格声子拉曼散射量子结构光电子学

掩埋隧道结VCSEL芯片小信号等效电路模型

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Journal of Semiconductors 2006年第11期27卷 2015-2018页

作者：徐桂芝 Hofmann W 黄亨沛张韬谢亮祝宁华 Amann M C 中国科学院半导体研究所北京100083 The walter schottky institute Technical University of MunichGermany

提出了适用于一种1.55μm掩埋隧道结垂直腔面发射激光器(VCSEL)芯片的小信号等效电路模型.等效电路的提出是基于半导体激光器速率方程以及VCSEL芯片结构,电路中各元件都有严格的物理意义.根据实验测得芯片的反射系数及传输参数,通过小... 详细信息

提出了适用于一种1.55μm掩埋隧道结垂直腔面发射激光器(VCSEL)芯片的小信号等效电路模型.等效电路的提出是基于半导体激光器速率方程以及VCSEL芯片结构,电路中各元件都有严格的物理意义.根据实验测得芯片的反射系数及传输参数,通过小信号等效电路仿真模拟,得到电路各元件参数值.不同偏置电流下,模拟结果与实验结果吻合都非常好,证明了该等效电路的有效性.

关键词： VCSEL 等效电路模型 S参数模拟

Widely tunable 2.3μm III-V-on-silicon Vernier lasers for broadband spectroscopic sensing

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Photonics Research 2018年第9期6卷 858-866页

作者： RUIJUN WANG STEPHAN SPRENGEL ANTON VASILIEV GERHARD BOEHM JORIS VAN CAMPENHOUT GuY LEPAGE PETER VERHEYEN ROEL BAETS MARKUS-CHRISTIAN AMANN GUNTHER ROELKENS Photonics Research Group Ghent University-IMECTechnologiepark-Zwijnaarde 15B-9052 GhentBelgium Center for Nano-and Biophotonics(NB-Photonics) Ghent UniversityB-9052 GhentBelgium walter schottky institut Technische Universitat MunchenAm Coulombwall 485748 GarchingGermany IMEC Kapeldreef 75Leuven B-3001Belgium

Heterogeneously integrating III-V materials on silicon photonic integrated circuits has emerged as a promising approach to make advanced laser sources for optical communication and sensing applications. Tunable semiconductor lasers operating in the 2–2.5 μm range are of great interest for industrial and medical applications since many gases(e.g., CO_2, CO, CH_4) and biomolecules(such as blood glucose) have strong absorption features in this wavelength region. The development of integrated tunable laser sources in this wavelength range enables low-cost and miniature spectroscopic sensors. Here we report heterogeneously integrated widely tunable III-V-on-silicon Vernier lasers using two silicon microring resonators as the wavelength tuning components. The laser has a wavelength tuning range of more than 40 nm near 2.35 μm. By combining two lasers with different distributed Bragg reflectors, a tuning range of more than 70 nm is achieved. Over the whole tuning range, the side-mode suppression ratio is higher than 35 dB. As a proof-of-principle, this III-V-on-silicon Vernier laser is used to measure the absorption lines of CO. The measurement results match very well with the high-resolution transmission molecular absorption(HITRAN) database and indicate that this laser is suitable for broadband spectroscopy.

关键词：硅光子集成电路通讯技术发展现状