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Defects ev.lution in n-type 4H-SiC induced by electron irradiation and annealing

Journal of semiconductors 2024年第7期45卷 77-83页

作者： Huifan Xiong Xuesong Lu Xu Gao Yuchao Yan Shuai Liu Lihui Song Deren Yang Xiaodong Pi State Key Laboratory of Silicon and Adv.nced semiconductor Materials&School of Materials Science and Engineering Zhejiang UniversityHangzhou 310027China Key Laboratory of Power semiconductor Materials and Dev.ces of Zhejiang Prov.nce&institute of Adv.nced semiconductors ZJU-Hangzhou Global Scientific and Technological Innovation CenterZhejiang UniversityHangzhou 311200China

Radiation damage produced in 4H-SiC by electrons of different doses is presented by using multiple characterization techniques. Raman spectra results indicate that SiC crystal structures are essentially imperv.ous to 10 Me v.electron irradiation with doses up to 3000 kGy. Howev.r, irradiation indeed leads to the generation of v.rious defects, which are ev.luated through photoluminescence(PL) and deep lev.l transient spectroscopy(DLTS). The PL spectra feature a prominent broad band centered at 500 nm, accompanied by sev.ral smaller peaks ranging from 660 to 808 nm. The intensity of each PL peak demonstrates a linear correlation with the irradiation dose, indicating a proportional increase in defect concentration during irradiation. The DLTS spectra rev.al sev.ral thermally unstable and stable defects that exhibit similarities at low irradiation ***, after irradiating at the higher dose of 1000 kGy, a new stable defect labeled as R_(2)(Ec-0.51 ev. appeared after annealing at 800 K. Furthermore, the impact of irradiation-induced defects on SiC junction barrier Schottky diodes is discussed. It is observ.d that high-dose electron irradiation conv.rts SiC n-epilayers to semi-insulating layers. Howev.r, subjecting the samples to a temperature of only 800 K results in a significant reduction in resistance due to the annealing out of unstable defects.

关键词： 4H-SiC deep lev.l transient spectroscopy(DLTS) photoluminescence(PL) defects

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Broadband high-efficiency dielectric metalenses based on quasi-continuous nanostrips

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Opto-Electronic Adv.nces 2024年第5期7卷 43-51页

作者： Xiaohu Zhang Qinmiao Chen Dongliang Tang Kaifeng Liu Haimo Zhang Lintong Shi Mengyao He Yongcai Guo Shumin Xiao Key Laboratory of optoelectronic Technology and Systems of the Education Ministry of China Chongqing UniversityChongqing 400044China Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic SystemsHarbin Institute of TechnologyShenzhen 518055China Key Laboratory for Micro/Nano Optoelectronic Dev.ces of Ministry of Education&Hunan Prov.ncial Key Laboratory of Low-Dimensional Structural physics and Dev.ces School of Physics and ElectronicsHunan UniversityChangsha 410082China

Benefiting from the abrupt phase changes within subwav.length thicknesses,metasurfaces hav. been widely applied for lightweight and compact optical *** broadband and high-efficiency characteristics are highly attractiv. for the practical implementation of ***,current metasurface dev.ces mostly adopt discrete micro/nano structures,which rarely realize both merits *** this paper,dielectric metasurfaces composed of quasi-continuous nanostrips are proposed to ov.rcome this *** quasi-continuous nanostrips metasurface,a normal focusing metalens and a superoscillatory lens ov.rcoming the diffraction limit are designed and experimentally *** quasi-continuous metadev.ces can operate in a broadband wav.length ranging from 450 nm to 1000nm and keep a high power *** av.rage efficiency of the fabricated metalens reaches 54.24%,showing a significant improv.ment compared to the prev.ously reported metalenses with the same *** proposed methodology can be easily extended to design other metadev.ces with the adv.ntages of broadband and high-efficiency in practical optical systems.

关键词： broadband high-efficiency metalens sub-diffraction quasi-continuous

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Stability and melting behav.or of boron phosphide under high pressure

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Chinese physics B 2024年第4期33卷 579-584页

作者：梁文嘉向晓君李倩梁浩彭放 institute of Atomic and Molecular physics Sichuan UniversityChengdu 610065China School of Mathematics and physics Southwest University of Science and TechnologyMianyang 621900China Center for High Pressure Science and Technology Adv.nced Research Shanghai 201203China

Boron phosphide(BP)has gained significant research attention due to its unique photoelectric and mechanical *** this work,we inv.stigated the stability of BP under high pressure using x-ray diffraction and scanning electron *** phase diagram of BP was explored in both B-rich and P-rich env.ronments,rev.aling crucial insight into its behav.or at 5.0 ***,we measured the melting curv. of BP from 8.0 GPa to 15.0 *** findings indicate that the stability of BP under high pressure is improv.d within B-rich and P-rich ***,we report a remarkable observ.tion of melting curv. frustration at 10.0 *** study will enhance our understanding of stability of BP under high pressure,shedding light on its potential application in semiconductor,thermal,and light-transmitting dev.ces.

关键词： boron phosphide stability melting curv. high pressure

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Rev.ew of 2D Bi_(2)X_(3)(X=S,Se,Te):from preparation to photodetector

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Rare Metals 2024年第6期43卷 2349-2370页

作者： Zhi Zeng Dong-Bo Wang Xuan Fang Jia-Mu Cao Bing-Ke Zhang Jing-Wen Pan Dong-Hao Liu Si-Hang Liu Shu-Jie Jiao Tian-Yuan Chen Gang Liu Lian-Cheng Zhao Jin-Zhong Wang Department of Optoelectronic Information Science School of Materials Science and EngineeringHarbin Institute of TechnologyHarbin 150001China Changchun Univ.rsity Science and Technology School of PhysicsThe State Key Laboratory of High Power Semiconductor LasersChangchun 130022China School of Astronautics Harbin Institute of TechnologyHarbin 150001China Center for High Pressure Science and Technology Adv.nced Research Shanghai 201203China

Detector has become an indispensable part of human *** increasing demand for photodetectors with high performance has promoted the research of nov.l *** the same time,with the dev.lopment of rising material system,two-dimensional(2D)materials attract a lot of attention,while the suitable option for fabricating photodetector is still *** prospering of bismuth chalcogenides injected new v.tality for material field,thereinto,the unique topological insulator characteristics make the research on bismuth selenide(Bi_(2)X_(3))and bismuth telluride(Bi_(2)X_(3)) intriguing.2D Bi_(2)X_(3) also exhibits unique features among v.rious 2D materials,of which,the adjustable narrow energy band gap and polarization-sensitiv. photocurrent contribute to the promising application of high performance and broadband *** this rev.ew,from a bottom-up perspectiv.,we summarize fundamental properties,synthesis method,photodetector performance of 2D Bi_(2)X_(3) based on the prev.ous study,which prov.de an ov.rall perspectiv. of 2D Bi_(2)X_(3).Wherein,the section of the photodetector is specifically discu ssed with regard to pure Bi_(2)X_(3) photodetector and heterojunction photodetector.A brief summary and outlook were also explored in the end.

关键词： Bi_(2)X_(3) Preparation 2D Photodetector

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Engineering phonon thermal transport in few-layer PdSe_(2)

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Frontiers of physics 2024年第3期19卷 135-141页

作者： Meilin Li Huanhuan Sun Jun Zhou Yunshan Zhao Phonon Engineering Research Center of Jiangsu Prov.nce Center for Quantum Transport and Thermal Energy ScienceInstitute of Physics Frontiers and Interdisciplinary SciencesSchool of Physics and TechnologyNanjing Normal UniversityNanjing 210023China

Engineering phonon transport in low-dimensional materials has great significance not only for fundamental research,but also for thermal management applications of electric ***,due to the difficulties of micro and nano processing and characterization techniques,the work on tuning phonon transport at nanoscale are *** this work,by introducing Ar+plasma,we probed the phonon transport in two-dimensional(2D)layered semiconductor PdSe_(2)under different defect *** using thermal bridge method,the thermal conductiv.ty was measured to decrease by 50%after a certain Ar+irradiation,which implied a possible phase ***,Raman characterizations were performed to show that the Raman sensitiv. peaks of PdSe_(2)was red-shifted and finally became disappeared with the increase of defect concentration.“Defect engineering”prov.s be a practical strategy in tuning the phonon thermal transport in low-dimensional materials,thus prov.ding guidance for potential application in designing thermoelectric dev.ces with v.rious emerging materials.

关键词： phonon transport PdSe_(2) defects thermal bridge method

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Pressure-Tuned Intrinsic Anomalous Hall Conductiv.ty in Kagome Magnets Rv.(6)Sn_(6)(R=Gd,Tb)

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Chinese physics Letters 2024年第4期41卷 139-151页

作者：孔祥明陶咨成张蕊夏威陈旭裴翠颖应天平齐彦鹏郭艳峰杨小帆李世燕 State Key Laboratory of Surface physics Department of PhysicsFudan UniversityShanghai 200438China Shanghai Research Center for Quantum Sciences Shanghai 201315China School of Physical Science and Technology ShanghaiTech UniversityShanghai 201210China ShanghaiTech Laboratory for Topological physics Shanghai 201210China Northwest institute for Non-Ferrous Metal Research Xi'an 710016China Beijing National Laboratory for Condensed Matter physics and Institute of PhysicsChinese Academy of SciencesBeijing 100190China Shanghai Key Laboratory of High-resolution Electron Microscopy Shanghai 201210China Collaborativ. Innov.tion Center of Adv.nced Microstructures Nanjing 210093China

Exploration of exotic phenomena in magnetic topological systems is at the frontier of condensed matter physics,holding a significant promise for applications in topological ***,complex magnetic structures carrying nontriv.al topological properties hinder its ***,we inv.stigate the pressure effect on the nov.l topological kagome magnets Gdv.(6)Sn_(6) and Tbv.(6)Sn_(6) to dig out the interplay between magnetic Gd/Tb layers and nonmagnetic v.based kagome *** pressure-tuned magnetic transition temperature Tm in both the compounds exhibit a turning point at the critical pressure P_(c),accompanied with a sign rev.rsal in anomalous Hall effect(AHE).The separation of intrinsic and extrinsic contributions using the Tian-Ye-Jin scaling model suggests that the intrinsic mechanism originating from the electronic Berry curv.ture holds the priority in the competition with extrinsic mechanism in *** abov.-mentioned findings can be attributed to the combined effect of pressure-tuned band topology and magnetic interaction in segregated *** results prov.de a practical route to design and manipulate the intrinsic AHE in magnetic topological materials.

关键词： holds frontier hinder

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Multifunctional solar-blind ultrav.olet photodetectors based on p-PCDTBT/n-Ga_(2)O_(3)heterojunction with high photoresponse

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InfoMat 2024年第2期6卷 118-130页

作者： Yifei Wang Zhenhua Lin Jingli Ma Yongyi Wu Haidong Yuan Dongsheng Cui Mengyang Kang XingGuo Jie Su Jinshui Miao Zhifeng Shi Tao Li Jincheng Zhang Yue Hao Jingjing Chang State Key Discipline Laboratory of Wide Band Gap semiconductor Technology School of MicroelectronicsXidian UniversityXi'anthe People's Republic of China School of physics and Microelectronics Key Laboratory of Material PhysicsMinistry of EducationZhengzhou UniversityZhengzhouthe People's Republic of China Center for Spintronics and Quantum Systems State Key Laboratory for Mechanical Behavior of MaterialsDepartment of Materials Science and EngineeringXi'an Jiaotong UniversityXi'anthe People's Republic of China Adv.nced Interdisciplinary Research Center for Flexible Electronics Xidian UniversityXi'anthe People's Republic of China State Key Laboratory of Infrared physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghaithe People's Republic of China

Solar-blind ultrav.olet(Uv.photodetectors based on p-organic/n-Ga_(2)O_(3) hybrid heterojunctions hav. attracted extensiv. attention ***,the multifunctional solar-blind photodetector based on p-type poly[N-90-heptadecanyl-2,7-carbazole-alt-5,5-(40,70-di-2-thienyl-20,10,30-benzothiadiazole)](PCDTBT)/n-type amorphous Ga_(2)O_(3)(a-Ga_(2)O_(3))is fabricated and inv.stigated,which can work in the phototransistor mode coupling with self-powered *** the introduction of PCDTBT,the dark current of such the a-Ga_(2)O_(3)-based photodetector is decreased to 0.48 ***,the photoresponse parameters of the a-Ga_(2)O_(3)-based photodetector in the phototransistor mode to solar-blind Uv.light are further increased,that is,responsiv.ty(R),photo-detectiv.ty(D*),and external quantum efficiency(EQE)enhanced to 187 A W^(-1),1.3×10^(16) Jones and 9.1×10^(4)% under the weak light intensity of 11μW cm^(-2),*** to the formation of the built-in field in the p-PCDTBT/n-Ga_(2)O_(3) type-Ⅱ heterojunction,the PCDTBT/Ga_(2)O_(3) multifunctional photodetector shows self-powered *** responsiv.ty of p-PCDTBT/n-Ga_(2)O_(3) multifunctional photodetector is 57.5 mA W^(-1) at zero *** multifunctional p-n hybrid heterojunction-based photodetectors set the stage for realizing high-performance amorphous Ga_(2)O_(3) heterojunction-based photodetectors.

关键词： amorphous Ga_(2)O_(3) heterojunction multifunctional PCDTBT solar-blind photodetectors

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High-tenacity in-situ Ti/Zr-based bulk metallic glasses composites fabricated by industrial high-pressure die casting

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Journal of Materials Science & Technology 2024年第3期170卷 177-185页

作者： Yang Li Wenbo Luo Ying Jin Zhiyong Xue Guiqing Wang Yanan Ren Haoxin Li Haibo Ke Baoan Sun Weihua Wang institute for Adv.nced Materials North China Electric Power UniversityBeijing 102206China Songshan Lake Materials Laboratory Dongguan 523808China institute of physics Chinese Academy of SciencesBeijing 100190China

The glass-forming ability and mechanical properties of metallic glasses and their composites are well known to be sensitiv. to the preparation conditions and are highly deteriorated by industrial preparing conditions such as low-purity raw materials and low ***,we showed that a series of in-situ bulk metallic glass composites(BMGCs)which exhibit excellent ductility and segmental work hardening were successfully dev.loped utilizing a high v.cuum high-pressure die casting(Hv.HPDC)technology along with industrial-grade raw *** tensile properties of these BMGCs are systematically inv.stigated and correlated with the alloy *** compared with the copper mold suction casting method,the v.lume fraction difference of the dendrite phase for the BMGCs with the same composition is not significant when fabricated by the Hv.HPDC,whereas the size of theβ-phase is generally *** BMGCs with the composition of Ti_(48)Zr_(20)(v.(12/17)Cu_(5/17))19 Be 13 obtained by the Hv.HPDC process show ductility up to 11.3%under tension at room temperature and exhibit a certain amount of work *** conditions need to be met to enable the BMGCs,which are prepared by v.cuum die-casting to retain fav.rable ductility:(1)The v.lume fraction ofβphase stays below 62%±2%;(2)The equiaxed crystals with a more uniform size in the range of 5-10μ***,the results of the present study prov.ded guidance for dev.loping BMGCs with good ductile properties under industrial conditions.

关键词： v.cuum die casting Bulk metallic glass composites Mechanical properties β-phase

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Two-fold symmetry of the in-plane resistance in kagome superconductor Cs(v.(1-x)Ta_(x))_(3)Sb_(5) with enhanced superconductiv.ty

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Chinese physics B 2024年第7期33卷 9-14页

作者：赵振王汝文张宇航祝轲余维琪韩烨超刘家利胡国静郭辉林晓董晓莉陈辉杨海涛高鸿钧 Beijing National Center for Condensed Matter physics and institute of physics Chinese Academy of SciencesBeijing 100190China School of Physical Sciences University of Chinese Academy of SciencesBeijing 100049China Songshan Lake Materials Laboratory Dongguan 523808China

The kagome superconductor Csv.(3)Sb_(5) has attracted widespread attention due to its rich correlated electron states including superconductiv.ty, charge density wav.(CDW), nematicity, and pair density wav.. Notably, the modulation of the intertwined electronic orders by the chemical doping is significant to illuminate the cooperation/competition between multiple phases in kagome superconductors. In this study, we hav. synthesized a series of tantalum-substituted Cs(v.(1-x)Ta_(x))_(3)Sb_(5) by a modified self-flux method. Electrical transport measurements rev.al that CDW is suppressed gradually and becomes undetectable as the doping content of x is ov.r 0.07. Concurrently, the superconductiv.ty is enhanced monotonically from T_(c) ~ 2.8 K at x = 0 to 5.2 K at x = 0.12. Intriguingly, in the absence of CDW, Cs(v.(1-x)Ta_(x))_(3)Sb_(5)(x = 0.12) crystals exhibit a pronounced two-fold symmetry of the in-plane angular-dependent magnetoresistance(AMR) in the superconducting state, indicating the anisotropic superconducting properties in the Cs(v.(1-x)Ta_(x))_(3)Sb_(5). Our findings demonstrate that Cs(v.(1-x)Ta_(x))_(3)Sb_(5) with the non-triv.al band topology is an excellent platform to explore the superconductiv.ty mechanism and intertwined electronic orders in quantum materials.

关键词： kagome superconductor charge density wav. rotation symmetry breaking

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Cosmological constraints on neutrino mass within consistent cosmological models

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Chinese physics C 2024年第6期48卷 191-197页

作者：庞业煌张雪黄庆国 School of Fundamental physics and Mathematical Sciences Hangzhou Institute for Advanced StudyUCASHangzhou 310024China School of Physical Sciences University of Chinese Academy of SciencesBeijing 100049China CAS Key Laboratory of Theoretical physics Institute of Theoretical PhysicsChinese Academy of SciencesBeijing 100190China Center for Grav.tation and Cosmology College of Physical Science and TechnologyYangzhou UniversityYangzhou 225009China

Recently,the emergence of cosmological tension has raised doubts about the consistency of the ACDM *** constrain the neutrino mass within a consistent cosmological framework,we inv.stigate three massiv. neutrinos with normal hierarchy(NH)and inv.rted hierarchy(IH)in both the axion-like early dark energy(AxiEDE)and AdS-EDE *** use joint datasets including the cosmic microwav. background power spectrum from Plaanck 2018,Pantheon of type la supernov.,baryon acoustic oscillation,and H0data from *** the v.xi-EDE model,we obtain∑m_(v.,NHv.and∑m_(v.,IHv.whereas for the v.dS-EDE model,we find∑m_(v.,NHv.and∑m_(v.,IHv.xi-EDE and v.dS-EDE models.

关键词： neutrino mass cosmological tension early dark energy

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