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Wafer-scale carbon-based CMOS PDK compatible with siliconbased VLSI design flow

Nano research 2024年第8期17卷 7557-7566页

作者： Minghui Yin Haitao Xu Yunxia You Ningfei Gao Weihua Zhang Hongwei Liu Huanhuan Zhou Chen Wang Lian-Mao Peng Zhiqiang Li Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China State Key Lab of Fabrication Technologies for Integrated Circuits Beijing 100029China Beijing Hua Tan Yuan Xin Electronics Technology Co. Ltd.Beijing 101399China Institute of Carbon-based thin film Electronics Peking UniversityShanxi 030012China Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics School of ElectronicsPeking UniversityBeijing 100871China

Carbon nanotube field-effect transistors(CNTFETs)are increasingly recognized as a viable option for creating high-performance,low-power,and densely integrated circuits(ICs).Advancements in carbon-based electronics,encompassing materials and device technology,have enabled the fabrication of circuits with over 1000 gates,marking carbon-based integrated circuit design as a burgeoning field of research.A critical challenge in the realm of carbon-based very-large-scale integration(VLSI)is the lack of suitable automated design methodologies and infrastructure *** this study,we present the development of a waferscale 3μm carbon-based complementary metal-oxide-semiconductor(CMOS)process design kit(PDK)(3μm-CNTFETs-PDK)compatible with silicon-based Electronic Design Automation(EDA)tools and VLSI circuit design *** proposed 3μm-CNTFETs-PDK features a contacted gate pitch(CGP)of 21μm,a gate density of 128 gates/mm^(2),and a transistor density of 554 transistors/mm^(2),with an intrinsic gate delay around 134 *** of the 3μm-CNTFETs-PDK was achieved through the successful design and tape-out of 153 standard cells and 333-stage ring oscillator *** the carbon-based PDK and a silicon-based design platform,we successfully implemented a complete 64-bit static random-access memory(SRAM)circuit system for the first time,which exhibited timing,power,and area characteristics of clock@10 kHz,122.1μW,3795μm×2810μ*** research confirms that carbon-based IC design can be compatible with existing EDA tools and silicon-based VLSI design flow,thereby laying the groundwork for future carbon-based VLSI advancements.

关键词： carbon nanotube field-effect transistors(CNTFETs) complementary metal-oxide-semiconductor(CMOS) process design kit(PDK) wafer-scale very-large-scale integration(VLSI)

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Influence of manganese rate on structural, optical and electrochemical properties of CeO_(2) thin films deposited by spray pyrolysis:Supercapacitor applications

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Journal of Rare Earths 2022年第10期40卷 1611-1618页

作者： J.Zimou K.Nouneh A.Talbi L.El Gana A.El-Habib R.Hsissou M.Addou Laboratory of Materials Physics and Subatomic Department of PhysicsFaculty of ScienceIbn Tofail UniversityBP 13314000KenitraMoroco thin film and nanomaterial research team Faculty of Science and TechiquesAbdelmalek Essadi UniversityTangerMorocco Laboratory of Organic Chemistry Catalysis and EnvironmentFaculty of SciencesIbn Tofail UniversityBP 24214000KenitraMorocco

The present work aimed to investigate the electrochemical properties of ITO substrates in propylene carbonate(PC) with 0.5 mol/L lithium perchlorate(LiClO_(4)) medium in the presence of elaborated thin films of cerium dioxide pure and doped with manganese at varying ***_(1-x)Mn_(x)O_(2)(x=0 wt%,2 wt%,4 wt% and 6 wt%) were successfully deposited by the spray pyrolysis(SP) technique on the glass substrate and ITO at 450℃.The effects of manganese(Mn) doped thin films Ce_(1-x)Mn_(x)O_(2) were studied and investigated by using different analyses namely X-ray diffraction(XRD) analysis,Raman spectroscopy method,UV-Vis spectrophotometer technique,atomic force microscopy(AFM) analysis and electrochemical *** data obtained present a polycrystalline with a face-centred cubic structure of fluorite *** results of undoped and Mn doped thin films show two peaks at 465 and 600 cm^(-1),due to the formation of extrinsic oxygen vacancies by the incorporation of Mn into Ce1-xMnxO_(2) *** dispersive spectroscopy(EDS) data show the presence of Ce,O,and Mn elements in the elaborated *** AFM results reveal that the surface roughness decreases with increasing Mn ***,band gap energy of thin films decreases with increasing in Mn rate due to the formation of defect state between valence and conduction *** storage capacity of the elaborated Ce_(1-x)Mn_(x)O_(2)/ITO/PC+LiClO_(4) electrode reaches a maximum of 1.997 mF in the presence of 6 wt% of Mn.

关键词： Ce1-xMnxO_(2)thin films Electrochemical properties ITO substrates XRD/UV-Vis/AFM Band gap energy Storage capacity

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Diamond-Like Carbon Depositing on the Surface of Polylactide Membrane for Prevention of Adhesion Formation During Tendon Repair

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Nano-Micro Letters 2024年第9期16卷 478-499页

作者： Yao Xiao Zaijin Tao Yufeng Ju Xiaolu Huang Xinshu Zhang Xiaonan Liu Pavel A.Volotovski Chao Huang Hongqi Chen Yaozhong Zhang Shen Liu Department of Orthopaedics Shanghai Jiao Tong University School of Medicine Affiliated Sixth People’s Hospital600 Yishan RdShanghai 200233People’s Republic of China Shanghai Tongji Hospital 389 Xincun RdShanghai 200065People’s Republic of China Key Laboratory for thin film and Microfabrication of Ministry of Education Research Institute of Micro/Nano Science and TechnologyShanghai Jiao Tong UniversityShanghai 200240People’s Republic of China Orthopedic Trauma Department Belarus Republic Scientific and Practical Center for Traumatology and OrthopedicsKizhevatova str.60/4220024 MinskBelarus Shanghai Haohai Biological Technology Limited Liability Company 1386 Hongqiao RdShanghai 200336People’s Republic of China Department of General Surgery Shanghai Jiao Tong University School of Medicine Affiliated Sixth People’s Hospital600 Yishan RdShanghai 200233People’s Republic of China Shanghai Key Laboratory for High Temperature Materials and Precision Forming School of Materials Science and EngineeringShanghai Jiao Tong UniversityShanghai 200240People’s Republic of China

Post-traumatic peritendinous adhesion presents a significant challenge in clinical *** study proposes the use of diamond-like carbon(DLC)deposited on polylactic acid(PLA)membranes as a biophysical mechanism for anti-adhesion barrier to encase ruptured tendons in tendon-injured *** results indicate that PLA/DLC composite membrane exhibits more efficient anti-adhesion effect than PLA membrane,with histological score decreasing from 3.12±0.27 to 2.20±0.22 and anti-adhesion effectiveness increasing from 21.61%to 44.72%.Mechanistically,the abundant C=O bond functional groups on the surface of DLC can reduce reactive oxygen species level effectively;thus,the phosphorylation of NF-κB and M1 polarization of macrophages are ***,excessive inflammatory response augmented by M1 macrophage-originated cytokines including interleukin-6(IL-6),interleukin-1β(IL-1β),and tumor necrosis factor-α(TNF-α)is largely *** biocompatibility evaluation,PLA/DLC membrane is slowly absorbed within tissue and displays prolonged barrier effects compared to traditional PLA *** studies show the DLC depositing decelerates the release of degradation product lactic acid and its induction of macrophage M2 polarization by interfering esterase and PLA ester bonds,which further delays the fibrosis *** was found that the PLA/DLC membrane possess an efficient biophysical mechanism for treatment of peritendinous adhesion.

关键词： Diamond-like carbon Reactive oxygen species scavenging Foreign body reaction Biodegradation Antioxidant Peritendinous adhesion

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Anisotropy-free arrayed waveguide gratings on X-cut thin film lithium niobate platform of in-plane anisotropy

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Light(Science & Applications) 2024年第7期13卷 1416-1426页

作者： Junjie Yi Changjian Guo Ziliang Ruan Gengxin Chen Haiqiang Wei Liwang Lu Shengqi Gong Xiaofu Pan Xiaowan Shen Xiaowei Guan Daoxin Dai Kangping Zhong Liu Liu State Key Laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZhejiang UniversityHangzhou 310058China. Guangdong Provincial Key Laboratory of Optical Information Materials and Technology South China Academy of Advanced OptoelectronicsSouth China Normal UniversityHigher-Education Mega-CenterGuangzhou 510006China. National Center for International research on Green Optoelectronics South China Normal UniversityGuangzhou 510006China Photonics research Institute Department of Electrical and Electronic EngineeringThe Hong Kong Polytechnic UniversityHung HomKowloonHong Kong(SAR)China. Jiaxing Key Laboratory of Photonic Sensing&Intelligent Imaging Intelligent Optics&Photonics Research CenterJiaxing Research Institute Zhejiang UniversityJiaxing 314000China

Arrayed waveguide grating is a versatile and scalable integrated light dispersion device,which has been widely adopted in various applications,including,optical communications and optical ***,thin-film lithium niobate emerges as a promising photonic integration platform,due to its ability of shrinking largely the size of typical lithium niobate based optical *** would also enable multifunctional photonic integrated chips on a single lithium niobate ***,due to the intrinsic anisotropy of the material,to build an arrayed waveguide grating on X-cut thin-film lithium niobate has never been ***,a universal strategy to design anisotropyfree dispersive components on a uniaxial in-plane anisotropic photonic integration platform is introduced for the first *** leads to the first implementation of arrayed waveguide gratings on X-cut thin-film lithium niobate with various configurations and *** best insertion loss of 2.4 dB and crosstalk of−24.1 dB is obtained for the fabricated arrayed waveguide grating *** of such arrayed waveguide gratings as a wavelength router and in a wavelength-division multiplexed optical transmission system are also demonstrated.

关键词： waveguide arrayed lithium

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Robust thin-film lithium niobate modulator on a silicon substrate with backside holes

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Chinese Optics Letters 2024年第5期22卷 17-21页

作者：王迈祁璐王浩华阮子良陈耿鑫陈斌龚胜琪陈楷旋刘柳 State Key Laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZhejiang UniversityHangzhou 310058China Guangdong Provincial Key Laboratory of Optical Information Materials and Technology South China Academy of Advanced OptoelectronicsSouth China Normal UniversityHigher-Education Mega-CenterGuangzhou 510006China National Center for International research on Green Optoelectronics South China Normal UniversityGuangzhou 510006China Jiaxing Key Laboratory of Photonic Sensing&Intelligent Imaging Intelligent Optics&Photonics Research CenterJiaxing Research InstituteZhejiang UniversityJiaxing 314000China

Recently,Mach–Zehnder modulators based on thin-film lithium niobate have attracted broad interest for their potential for high modulation bandwidth,low insertion loss,high extinction ratio,and high modulation *** periodic capacitively loaded traveling-wave electrode is optimally adopted for ultimate high-performances in this type of ***,such an electrode structure on a silicon substrate still suffers from the velocity mismatch and substrate leakage loss for microwave ***,we introduce a thin-film lithium niobate modulator structure using this periodic capacitively loaded electrode on a silicon *** holes in the silicon substrate are prepared to solve robustly the above *** fabricated device exhibits an insertion loss of 0.9 dB,a halfwave-voltage–length product of 2.18 V·cm,and an ultra-wide bandwidth well exceeding 67 GHz for a 10-mm-long *** transmissions with rates up to 112 Gb/s are *** proposed structure and fabrication strategy are compatible for other types of monolithic and heterogeneous integrated thin-film lithium niobate modulators on a silicon substrate.

关键词： lithium niobate electro-optic modulator high bandwidth backside holes robust structure

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Formation of the front-gradient bandgap in the Ag doped CZTSe thin films and solar cells

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Journal of Energy Chemistry 2019年第8期28卷 188-196,I0007页

作者： Dongxiao Wang Jianyu Wu Xiyu Liu Li Wu Jianping Ao Wei Liu Yun Sun Yi Zhang Institute of Photoelectronic thin film Devices and Technology and Tianjin Key Laboratory of thin film Devices and Technology Nankai UniversityTianjin 300350 China School of Physical Science Nankai UniversityTianjin 300071 China

The graded bandgap of kesterite based absorber layer is an important way to achieve high efficiency solar cells. Incorporation of Ag into CZTSSe thin films can adjust the bandgap and thus reduce the VOC-deficit and improve the quality of crystallization. However, the distribution of Ag is difficult to control due to the quick diffusion of Ag under the high temperature. In this study, we achieve the front Ag-gradient in kesterite structured compound films by prealloying followed by selenization process at 550 °C. AgZn3,Ag3Sn, and Sn–Ag–Cu alloy phases were formed during prealloying stage at 250 °C. After prealloying process, Ag tends to distribute at the front surface of the ACZTSe thin films. Combining the results of experiment and SCAPS simulation, the significantly VOCimprovement of devices is ascribed to the formation of the front Ag-gradient bandgap structure in the absorber layer. This facile prealloying selenization process affords a feasible method to design the graded bandgap structure absorber layers, which will promote the fabrication of high efficient graded bandgap structure solar cells.

关键词： CZTSe solar cell Front Ag-gradient Elements distribution SCAPS simulation

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Interfaces of high-efficiency kesterite Cu_2ZnSnS(e)_4 thin film solar cells

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Chinese Physics B 2018年第1期27卷 2-18页

作者：高守帅姜振武武莉敖建平曾玉孙云张毅 Institute of Photoelectronic thin film Devices and Technology Tianjin Key Laboratory of Photoelectronic Thin Film Devices and TechnologyNankai University The MOE Key Laboratory of Weak-Light Nonlinear Photonics School of Physics Nankai University

Cu2ZnSnS（e）4 （CZTS（e）） solar cells have attracted much attention due to the elemental abundance and the non- toxicity. However, the record efficiency of 12.6% for CuzZnSn（S,Se）4 （CZTSSe） solar cells is much lower than that of Cu（In,Ga）See （CIGS） solar cells. One crucial reason is the recombination at interfaces. In recent years, large amount inves- tigations have been done to analyze the interfacial problems and improve the interfacial properties via a variety of methods. This paper gives a review of progresses on interfaces of CZTS（e） solar cells, including：（i） the band alignment optimization at buffer/CZTS（e） interface, （ii） tailoring the thickness of MoS（e）2 interfacial layers between CZTS（e） absorber and Mo back contact, （iii） the passivation of rear interface, （iv） the passivation of front interface, and （v） the etching of secondary phases.

关键词： Cu2ZnSnS4 solar cells kesterite interface passivation

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Controllable Synthesis of Fluorescent Carbon Dots and Their Detection Application as Nanoprobes

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Nano-Micro Letters 2013年第4期5卷 247-259页

作者： Zhi Yang Zhaohui Li Minghan Xu Yujie Ma Jing Zhang Yanjie Su Feng Gao Hao Wei Liying Zhang Key Laboratory for thin film and Microfabrication of Ministry of Education Research Institute of Micro/Nano Science and TechnologyShanghai Jiao Tong University

Carbon dots(CDs), as a new member of carbon nanomaterial family, have aroused great interest since their discovery in 2004. Because of their outstanding water solubility, high sensitivity and selectivity to target analytes, low toxicity, favorable biocompatibility, and excellent photostability, researchers from diverse disciplines have come together to further develop the fundamental properties of CDs. Many methods for the production of CDs have been reported, therein, hydrothermal and solvothermal technology needs simple equipments, and microwave synthesis needs less reaction time, hence these methods become current common synthesis methods, in which many precursors have been applied to produce CDs. Due to their excellent fluorescence, CDs have made impressive strides in sensitivity and selectivity to a diverse array of salt ions,organic/biological molecules and target gases. The development of CDs as nanoprobes is still in its infancy, but continued progress may lead to their integration into environmental and biological applications. Hydrothermal,solvothermal, and microwave synthesis of fluorescent carbon dots and their detection applications as nanoprobes in salt ions, organic/biological molecules, and target gases will be reviewed.

关键词： Carbon dots Hydrothermal Solvothermal Microwave Nanoprobe

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Review on Alkali Element Doping in Cu（In,Ga）Se2 thin films and Solar Cells

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Engineering 2017年第4期3卷 452-459页

作者： Yun Sun Shuping Lin Wei Li Shiqing Cheng Yunxiang Zhang Yiming Liu Wei Liu Tianjin Key Laboratory of thin film Devices and Technology College of Electronic Information and Optical Engineering Nankai University Tianjin 300071 China Engineering research Center of Nano-Structured thin film Solar Cell Beijing 102211 China Mads Clausen lnstit~lte University of Southern Denmark SФnderborg 6400 Denmark

This paper reviews the development history of alkali element doping on Cu(In,Ga)Se2 (CIGS) solar cells and summarizes important achievements that have been made in this field. The influences of incorporation strategies on CIGS absorbers and device performances are also reviewed. By analyzing CIGS surface structure and electronic property variation induced by alkali fluoride (NaF and KF) post-deposition treatment (PDT), we discuss and interpret the following issues: ① The delamination of CIGS thin films induced by Na incorporation facilitates CuInSe2 formation and inhibits Ga during low-temperature co-evaporation processes. ② The mechanisms of carrier density increase due to defect passivation by Na at grain boundaries and the surface. ③ A thinner buffer layer improves the short-circuit current without open-circuit voltage loss. This is attributed not only to better buffer layer coverage in the early stage of the chemical bath deposition process, but also to higher donor defect (CdCu+) density, which is transferred from the acceptor defect (VCu−) and strengthens the buried homojunction. ④ The KF-PDT-induced lower valence band maximum at the absorber surface reduces the recombination at the absorber/buffer interface, which improves the open-circuit voltage and the fill factor of solar cells.

关键词： Alkali elements Cu(In Ga)Se2 thin-film solar cells Post-deposition treatment

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MOCVD derived double-sided YBa_2Cu_3O_(7-δ) films on Y_2O_3 /YSZ/CeO_2 buffered textured metal substrates

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Science China(Technological Sciences) 2014年第4期57卷 720-724页

作者： XIONG Jie ZHANG Fei XIA YuDong LIU Xin ZHAO RuiPeng ZHAO XiaoHui TAO BoWan State Key Laboratory of Electronic thin film and Integrated Devices University of Electronic Science and Technology of China

We have successfully employed metal-organic chemical vapor deposition(MOCVD)technique to simultaneously deposit double-sided YBa2Cu3O7-δ(YBCO)films on both sides of Y2O3/yttria-stabilized zirconia(YSZ)/CeO2(YYC)buffered biaxially textured Ni-5 at.%W substrates,which is of great prospect to cut the production cost of YBCO coated conductors.X-ray diffraction analysis revealed that both sides of YBCO film were purely c-axis oriented and highly ***φ-scan of(005)YBCO andφ-scan of(103)YBCO yielded full width at half maximum(FWHM)values of 4.9°and 6.6°for one side of double-sided YBCO film,respectively,as well as 4.4°and 6.4°for the other *** current transportation measurements performed on such double-sided 500 nm-thickness YBCO films showed the self-field critical current density(Jc)at 77 K of0.6 MA/cm2 and 1.2 MA/cm2,*** research is in the process of exploring new solution to improve the Jc in practice.

关键词：金属有机化学气相沉积 YBCO涂层导体双面金属基体金属有机物化学气相沉积质感缓冲 YBCO薄膜

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