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Thickness and sp3 bond modulation of（Ti/tetrahedral amorphous carbon）_n multilayer coatings

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Tungsten 2025年第1期7卷 152-160页

作者： Zhi-Jun Xie Jia-Lin Li Ling Gong Xiang-Li Zhong Hong-Jia Song Jin-Bin Wang National-Provincial laboratory of Special Function thin film Materials School of Materials Science and Engineering Xiangtan University

The durability of wear-resistant tetrahedral amorphous carbon（ta-C） coatings is intimately linked to their thickness and the concentration of *** enhance the lifespan of the coatings,we have prepared a multilayer coating consisting of alternating layers of Ti and ta-C,denoted as（Ti/ta-C）_n,using arc ion plating.A multi-layer structure in conjunction with stage cooling is employed to enhance the thickness and promote *** results indicate that the ID/IGvalue,representing the ratio of the intensity of the D peak to that of the G peak in Raman spectroscopy,decreases from 0.85 when no stage cooling is applied to 0.35 when stage cooling is employed,suggesting an enhancement in the fraction of sp3bonds within the *** obtained（Ti/ta-C）_n multilayer coating without peeling off has a maximum thickness of 1.14 μm,which is almost double that of the ta-C coating single layer *** the same time,the coating has a low coefficient of friction,down to 0.069,and maintains excellent friction properties with a wear rate of 3.4×10-6mm3·N-1·*** results conclusively show that the preparation technology can enhance both thickness and sp3bonding in ta-C coatings,significantly expanding their utility across tools,molds,and precision engineering components.

关键词： Arc ion plating Multilayer structure sp3 bond Ta-C coating Wear resistance

Performance enhancement of perovskite solar cells with Cs2PtI6-xBrx absorber layer based on numerical simulation

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Optoelectronics Letters 2025年

作者： Du Zuyan Yuan Yujie Hou Guofu Xin Yupeng Bi Jinlian Li Wei Tianjin Key laboratory of film Electronic and Communication Devices， School of Integrated Circuit Science and Engineering， Tianjin University of Technology Institute of Photoelectronic thin film Devices and Technology， Nankai University

Cs2TiBr6， characterized as a lead-free vacancy-ordered double perovskite material， demonstrates notable stability and photoelectric performance， rendering it suitable for application in perovskite solar cells. However， the experimental efficiency of this material is currently limited， achieving only 3.12%. This efficiency limitation primarily stems from the material’s wide bandgap， which results in insufficient light absorption. To address this issue， this study utilized Cs2PtI6-xBrxfor band structure fine-tuning. By adjusting the bandgap of Cs2PtI6-xBrxthrough Br-doping， not only was the alignment of the energy bandgap in the absorption layer effectively adjusted， but the cutoff range of light absorption was also significantly expanded. Setting the Cs2PtI6-xBrxbandgap to 1.4 eV resulted in optimal device performance. Additionally， comparative analyses aimed at boosting solar cell efficiency were performed on both hole transport and electron transport layer materials. Subsequently， the structure of the perovskite solar cell was optimized using an FTO/TiO2/Cs2TiBr6/Cs2PtI6-xBrx/Cu2O/Au configuration. Furthermore， the influence of the absorber layer thickness and defect density on device performance was studied. Ultimately， this configuration enabled the Cs2TiBr6/Cs2PtI6-xBrxsolar cell to achieve a peak conversion efficiency of 29.69%.

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Achieving ultralow leakage current in Schottky-MIS cascode anode lateral field-effect diode based on AlGaN/GaN HEMT

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Science China(Information Sciences) 2025年第1期68卷 379-385页

作者： Fangzhou WANG Changhong GAO Guojian DING Cheng YU Zhuocheng WANG Xiaohui WANG Qi FENG Ping YU Peng ZUO Wanjun CHEN Yang WANG Haiqiang JIA Hong CHEN Bo ZHANG Zeheng WANG Songshan Lake Materials laboratory School of Microelectronics Southern University of Science and Technology State Key laboratory of Electronic thin films and Integrated Devices University of Electronic Science and Technology of China Manufacturing Commonwealth Scientific and Industrial Research Organisation

In this paper,we design and fabricate a Schottky-metal-insulator-semiconductor（MIS） cascode anode GaN lateral field-effect diode（CA-LFED） to achieve ultralow reverse leakage current(ILEAK).The device based on AlGaN/GaN highelectron-mobility-transistor（HEMT） includes a normally-off MIS-controlled channel that is cascoded with a high barrier height Schottky *** reverse bias,the high electric-field is effectively prevented by the normally-off MIS-controlled channel *** with the high barrier height Schottky contact,this feature significantly suppresses the *** by the device fabrication,the CA-LFED with high breakdown voltage（BV）>600 V shows an ultralow ILEAKof 3.6×10-9A/mm as well as a low forward voltage drop（VF） of 2.2 *** performance suggests that the CA-LFED can be a promising candidate for ultralow ILEAKand better VF-ILEAKtrade-off GaN power diode applications.

关键词： Schottky-MIS cascode anode lateral field-effect diode (LFED) ultralow reverse leakage current ($I_{\rm{LEAK}}$) forward drop and reverse leakage trade-off AlGaN/GaN HEMTs

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A reduction scheme of PAPR in CO-OFDM system using time-delay neural networks

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Optoelectronics Letters 2025年

作者： TONG Zhengrong LIU Zhihong WANG Hao ZHANG Weihua ZHANG Tianhao JIA Qiqi Tianjin Key laboratory of thin film Electronics and Communication Devices， Engineering Research Center for Optoelectronic Devices and Communication Technology of the Ministry of Education， School of Integrated Circuit Science and Engineering， Tianjin University of Technology

An iterative partial transmission sequence （IPTS） cascading time-delay neural network （TDNN） scheme is proposed to reduce peak-to-average power ratio （PAPR） in the coherent optical orthogonal frequency division multiplexing （CO-OFDM） systems. The IPTS algorithm further reduces computational complexity based on the partial transmission sequence （PTS） algorithm. TDNN is trained by the iterative clipping filtering （ICF） method. Simulation results show that the proposed scheme achieves a PAPR reduction of 5.84 dB when complementary cumulative distribution function （CCDF） is 10-4and an extra transmission distance of 200 km for 10-3bit error rate （BER） compared to the original signals.

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Two-step growth of VSe_2 films and their photoelectric properties

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Chinese Physics B 2019年第5期28卷 343-349页

作者： Yu Zeng Shengli Zhang Xiuling Li Jianping Ao Yun Sun Wei Liu Fangfang Liu Peng Gao Yi Zhang Institute of Photoelectronic thin film Devices and Technology Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology Tianjin Institute of Power Source

We put forward a two-step route to synthesize vanadium diselenide(VSe_2), a typical transition metal dichalcogenide(TMD). To obtain the VSe_2 film, we first prepare a vanadium film by electron beam evaporation and we then perform selenization in a vacuum chamber. This method has the advantages of low temperature, is less time-consuming, has a large area, and has a stable performance. At 400?C selenization temperature, we successfully prepare VSe_2 films on both glass and Mo substrates. The prepared VSe_2 has the characteristic of preferential growth along the c-axis, with low *** is found that the contact between Al and VSe_2/Mo is ohmic contact. Compared to Mo substrate, lower square resistance and higher carrier concentration of the VSe_2/Mo sample reveal that the VSe_2 film may be a potential material for thin film solar cells or other semiconductor devices. The new synthetic strategy that is developed here paves a sustainable way to the application of VSe_2 in photovoltaic devices.

关键词： two-step route VSe2 selenization thin film

Improvement of the Open Circuit Voltage of CZTSe thin-film Solar Cells by Surface Sulfurization Using SnS

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Chinese Physics Letters 2015年第12期32卷 160-162页

作者：孙顶葛阳许盛之张力李宝璋王广才魏长春赵颖张晓丹 Institute of Photo Electronics thin film Devices and Technology and Key Laboratory of Photoelectronic Thin Film Devices and TechnologyNankai University

The objective of this study is to find an effective method to improve Voc without Jsc loss for Cu2ZnSnSe4 （CZTSe） thin film solar cells, which have been fabricated by the one step co-evaporation technique. Surface sulfurization of CZTSe thin films is carried out by using one technique that does not utilize toxic H2S gas; a sequential evaporation of SnS after CZTSe deposition and the annealing of CZTSe thin films in selenium vapor. A Cu2ZnSn（S, Se）4 （CZTSSe） thin layer is grown on the surface of the CZTSe thin film after the annealing. The conversion efficiency of the completed device is improved due to the enhancement of Voc, which could be attributed to the formation of a hole-recombination barrier at the surface or the passivation of the surface and grain boundary by S incorporation.

关键词： Improvement of the Open Circuit Voltage of CZTSe thin-film Solar Cells by Surface Sulfurization Using SnS

Insight into band alignment of Zn(O,S)/CZTSe solar cell by simulation

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Chinese Physics B 2019年第4期28卷 408-414页

作者： Zhen-Wu Jiang Shou-Shuai Gao Si-Yu Wang Dong-Xiao Wang Peng Gao Qiang Sun Zhi-Qiang Zhou Wei Liu Yun Sun Yi Zhang Institute of Photoelectronic thin film Devices and Technology Tianjin Key laboratory of Photoelectronic thin film Devices and Technology Tianjin Institute of Power Source

Cd-free kesterite structured solar cells are currently attracting attention because they are environmentally friendly. It is reported that Zn(O,S) can be used as a buffer layer in these solar cells. However, the band alignment is not clear and the carrier concentration of Zn(O,S) layer is low. In this study, the band alignment of the Zn(O,S)/Cu_2 ZnSnSe_4 p–n junction solar cell and the effect of In_2 S_3/Zn(O,S) double buffer layer are studied by numerically simulation with wxAMPS *** optimizing the band gap structure between Zn(O,S) buffer layer and Cu_2 ZnSnSe_4 absorber layer and enhancing the carrier concentration of Zn(O,S) layer, the device efficiency can be improved greatly. The value of CBO is in a range of 0 eV–0.4 eV for S/(S + O)= 0.6–0.8 in Zn(O,S). The In_2 S_3 is mainly used to increase the carrier concentration when it is used as a buffer layer together with Zn(O,S).

关键词： CZTSe band alignment double buffer layer simulation

Influence of selenium evaporation temperature on the structure of Cu_2ZnSnSe_4 thin film deposited by a co-evaporation process

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Journal of Semiconductors 2015年第4期36卷 74-77页

作者：孙顶许盛之张力陈泽葛阳王宁梁雪娇魏长春赵颖张晓丹 Institute of Photo Electronics thin film Devices and Technology Nankai UniversityKey Laboratory of Photoelectronic Thin Film Devices and Technology

Cu2ZnSnSe4 （CZTSe） thin film solar cells have been fabricated using a one-step co-evaporation technique. The structural properties of polycrystalline CZTSe films deposited at different selenium evaporation temperatures （TSe） have been investigated using X-ray diffraction spectra, scanning electron microscopy, and atomic force microscopy. A relationship between TSe and the secondary phases deposited in the initial stage is established to explain the experimental observations. The Se flux is not necessarily increased too much to reduce Sn loss and the consumption of Se during fabrication could also be reduced. The best solar cell, with an efficiency of 2.32%, was obtained at a medium Tse of 230 ℃ （active area 0.34 cm2）.

关键词： Cu2ZnSnSe4 one-step co-evaporation selenium flux thin film solar cells Sn loss

CuInSe2 films Prepared by a Plasma-Assisted Selenization Process in Different Working Pressures

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Chinese Physics Letters 2010年第2期27卷 292-294页

作者：于涛张毅李宝璋姜伟龙王赫蔡永安刘玮李凤岩孙云 Institute of Photo-electronic thin film Devices and Technology and the Tianjin Key Laboratory for Photoelectronic Thin Film Devices and Technology Nankai University Tianjin 300071

The effects of working pressure on the composition, structure and surface morphology properties of CuInSe2 （CIS） films selenized with a plasma-assisted selenization process is investigated. Higher selenium content, better crystalline quality and much more regular surface particles compared to the others are found in the CIS film with 40 Pa working pressure. A Cu（In,Ga）Se2 device fabricated with the optimized plasma-assisted selenization process is demonstrated to be better than our previous result. After discussion, the reason for these phenomena is attributed to the compromise of electron temperature and plasma density.

关键词： Electronics and devices Semiconductors Surfaces interfaces and thin films Plasma physics Condensed matter: structural mechanical & thermal