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Experimental and numerical demonstration of hierarchical time-delay reservoir computing based on cascaded VCSELs with feedback and multiple injections

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Science China(Information Sciences) 2024年第2期67卷 279-290页

作者： Xingxing GUO Shuiying XIANG Xingyu CAO Biling GU state key laboratory of Integrated Service Networks Xidian University state key discipline laboratory of wide bandgap semiconductor technology School of MicroelectronicsXidian University

In this paper, we propose and demonstrate experimentally and numerically a hierarchical timedelay optical reservoir computing(RC) system based on cascaded vertical-cavity surface-emitting lasers(VCSELs) with feedback and multiple injections. The prediction performance characteristics of the hierarchical time-delay RC system based on cascaded VCSELs under different reservoir layers are ***, the prediction performance of the hierarchical time-delay RC system is first improved and saturates as the number of reservoir layers increases. Besides, the impacts of key factors on predicting the hierarchical time-delay RC system are also analyzed in detail experimentally and numerically. This proposed hierarchical time-delay RC system based on VCSELs is useful for the further development of RC systems and may be beneficial to improve the ability of RC systems to solve more complex problems.

关键词： vertical-cavity surface-emitting laser reservoir computing neuromorphic photonics time-delay system information processing

Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure

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Science China(Information Sciences) 2024年第4期67卷 341-342页

作者： Chunzhou SHI Ling YANG Meng ZHANG Hao LU Mei WU Bin HOU Xuerui NIU Qian YU Wenliang LIU Wenze GAO Xiaohua MA Yue HAO School of Advanced Materials and Nanotechnology Xidian University state key discipline laboratory of wide bandgap semiconductor technology Xidian University

GaN-based high-electric-mobility transistors(HEMTs) have been investigated thoroughly because of their promising applications in high-frequency,-voltage, and-power applications. However, the theoretical material limit prevents conventional single-heterostructure GaN HEMTs from achieving high performance despite numerous efforts [1–3].

关键词： Drain current

Short-term prediction for chaotic time series based on photonic reservoir computing using VCSEL with a feedback loop

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Photonics Research 2024年第6期12卷 1222-1230页

作者： XINGXING GUO HANXU ZHOU SHUIYING XIANG QIAN YU YAHUI ZHANG YANAN HAN TAO WANG YUE HAO state key laboratory of Integrated Service Networks Xidian UniversityXi'an 710071China state key discipline laboratory of wide bandgap semiconductor technology School of MicroelectronicsXidian UniversityXi'an 710071China

Chaos,occurring in a deterministic system,has permeated various fields such as mathematics,physics,and life ***,the prediction of chaotic time series has received widespread attention and made signifi-cant ***,many problems,such as high computational complexity and difficulty in hardware im-plementation,could not be solved by existing *** overcome the problems,we employ the chaotic system of a vertical-cavity surface-emitting laser(VCSEL)mutual coupling network to generate chaotic time series through optical system simulation and experimentation in this ***,a photonic reservoir com-puting based on VCSEL,along with a feedback loop,is proposed for the short-term prediction of the chaotic time *** relationship between the prediction difficulty of the reservoir computing(RC)system and the differ-ence in complexity of the chaotic time series has been studied with ***,the attention coefficient of injection strength and feedback strength,prediction duration,and other factors on system perfor-mance are considered in both simulation and *** use of the RC system to predict the chaotic time series generated by actual chaotic systems is significant for expanding the practical application scenarios of the RC.

关键词： loop chaotic prediction

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Realtime observation of “spring fracture” like AlGaN/GaN HEMT failure under bias

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Science China(Information Sciences) 2024年第1期67卷 303-305页

作者： Qing ZHU Zhenni WANG Yuxiang WEI Ling YANG Xiaoli LU Jiejie ZHU Peng ZHONG Yimin LEI Xiaohua MA School of Microelectronics Xidian University state key discipline laboratory of wide bandgap semiconductor technology Xidian University School of Advanced Materials and Nanotechnology Xidian University

The AlGaN/GaN HEMTs have been considered promising candidates for high-frequency and high-power applications,while the reliability issues greatly limit the commercialization of AlGaN/GaN HEMTs. In the past, the research on the reliability of devices was often based on Raman spectroscopy, cathodoluminescence, and TEM after failure of the devices, which is often considered to be the laborious and complicated “archaeological” kind of analysis [1].

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Performance improvement of β-Ga2O3 SBD-based rectifier with embedded microchannels in ceramic substrate

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Science China(Information Sciences) 2024年第5期67卷 341-342页

作者： Wen HONG Chao ZHANG Fang ZHANG Xuefeng ZHENG Xiaohua MA Yue HAO state key laboratory of wide-bandgap semiconductor Devices and Integrated technology School of MicroelectronicsXidian University

With the development of integrated circuits, there is a growing demand for higher power devices [1]. Gallium oxide（Ga2O3） holds promise for high power devices due to its wide bandgap and high breakdown electric field strength [2].However, its low thermal conductivity induces severe selfheating effects, limiting its performance and ***, effective thermal management techniques are urgently needed for Ga2O3devices.

关键词： Gallium compounds

High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz

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Science China(Information Sciences) 2024年第6期67卷 459-460页

作者： Hanghai DU Lu HAO Zhihong LIU Zeyu SONG Yachao ZHANG Kui DANG Jin ZHOU Jing NING Zan LI Jincheng ZHANG Yue HAO state key laboratory of wide bandgap semiconductor Devices and Integrated technology School of MicroelectronicsXidian University Guangzhou wide bandgap semiconductor Innovation Center Guangzhou Institute of TechnologyXidian University state key laboratory of Integrated Services Networks School of Communication EngineeringXidian University

GaN-based metal-insulator-semiconductor high-electronmobility-transistors (MISHEMTs) have many excellent performances compared with the Si and Ga As counterparts,and are prime candidates for applications in communicat...

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Accelerated Sequential Deposition Reaction via Crystal Orientation Engineering for Low-Temperature,High-Efficiency Carbon-Electrode CsPbBr_(3) Solar Cells

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Energy & Environmental Materials 2024年第1期7卷 168-175页

作者： Zeyang Zhang Weidong Zhu Tianjiao Han Tianran Wang Wenming Chai Jiaduo Zhu He Xi Dazheng Chen Gang Lu Peng Dong Jincheng Zhang Chunfu Zhang Yue Hao state key discipline laboratory of wide Band Gap semiconductor technology&Shaanxi Joint key laboratory of Graphene School of MicroelectronicsXidian UniversityXi'an 710071China Guangzhou wide bandgap semiconductor Innovation Center Guangzhou institute of technologyXidian UniversityGuangzhou 510555China Qinghai Huanghe Hydropower Development CO. LTD.Xining810008China

Low-temperature,ambient processing of high-quality CsPbBr_(3)films is demanded for scalable production of efficient,low-cost carbon-electrode perovskite solar cells(PSCs).Herein,we demonstrate a crystal orientation engineering strategy of PbBr_(2)precursor film to accelerate its reaction with CsBr precursor during two-step sequential deposition of CsPbBr_(3)*** a novel strategy is proceeded by adding CsBr species into PbBr_(2)precursor,which can tailor the preferred crystal orientation of PbBr_(2)film from[020]into[031],with CsBr additive staying in the film as CsPb_(2)Br_(5)*** calculations show that the reaction energy barrier of(031)planes of PbBr_(2)with CsBr is lower about 2.28 eV than that of(O2O)***,CsPbBr_(3)films with full coverage,high purity,high crystallinity,micro-sized grains can be obtained at a low temperature of 150℃.Carbon-electrode PSCs with these desired CsPbBr_(3)films yield the record-high efficiency of 10.27%coupled with excellent operation ***,the 1 cm^(2)area one with the superior efficiency of 8.00%as well as the flexible one with the champion efficiency of 8.27%and excellent mechanical bending characteristics are also achieved.

关键词： carbon-electrode perovskite solar cells crystal orientation engineering CsPbBr_(3) low temperature two-step sequential deposition

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Graded Heterojunction Improves wide-bandgap Perovskite for Highly Efficient 4-Terminal Perovskite/Silicon Tandem Solar Cells

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Research 2024年第2期2023卷 181-190页

作者： Wenming Chai Lindong Li Weidong Zhu Dazheng Chen Long Zhou He Xi Jincheng Zhang Chunfu Zhang Yue Hao state key discipline laboratory of wide Band Gap semiconductor technology&Shaanxi Joint key laboratory of Graphene School of MicroelectronicsXidian UniversityXi'anShaanxi 710071China Xi'an Baoxin Solar technology Co. Ltd.Xi'an710071China

wide-bandgap(WBG)perovskite solar cells(PSCs)are essential for highly efficient and stable silicon/perovskite tandem solar *** this study,we adopted a synthetic strategy with lead thiocyanate(Pb(SCN)_(2))additive and methylammonium chloride(MACl)posttreatment to enhance the crystallinity and improve the interface of WBG perovskite films with a bandgap of 1.68 *** excessive PbI_(2)was formed at grain boundaries and converted into MAPbI_(3-x)Cl_(x)perovskites,which are utilized to form the graded heterojunction(GHJ)and compressive *** is beneficial for passivating nonradiative recombination defects,suppressing halide phase segregation,and facilitating carrier ***,the device with GHJ delivered a champion efficiency of 20.30%and superior stability in ambient air and under 85℃.Finally,we achieved a recorded efficiency of 30.91%for 4-terminal WBG perovskite/TOPCon tandem silicon solar *** findings demonstrate a promising approach for fabricating efficient and stable WBG PSCs through the formation of GHJ.

关键词： perovskite Graded Highly

Current collapse suppressed GaN diodes with 38 Watts high RF power rectifier capability

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Science China(Information Sciences) 2024年第2期67卷 335-336页

作者： Kui DANG Zhilin QIU Shudong HUO Peng ZHAN Huining LIU Yachao ZHANG Jing NING Hong ZHOU Jincheng ZHANG key Lab of Ministry of Education for wide Band-Gap semiconductor Materials and Devices School of MicroelectronicsXidian University Guangzhou wide bandgap semiconductor Innovation Center Guangzhou Institute of TechnologyXidian University

Microwave power transmission(MPT) could realize the point-to-point long-distance transfer of energy without any wires, which makes it attractive for solar-powered satellites,drones, and implantable medical devices, and has aroused enormous attention [1]. Microwave rectifiers could convert RF(radio frequency) energy into DC(direct current) power,

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