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Enhanced conductivity and weakened magnetism in Pb-doped Sr2IrO4

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Chinese Physics B 2024年第1期33卷 696-701页

作者：岳智来甄伟立牛瑞焦珂珂朱文卡皮雳张昌锦 High Magnetic Field Laboratory Hefei Institutes of Physical ScienceChinese Academy of Sciences science Island Branch of Graduate School University of Science and Technology of China collaborative innovation center of Advanced Microstructures Nanjing University

Group IV element Pb has been selected as the dopant to dope at the Sr site of Sr2IrO4. It is exciting to find that the single-phase crystal structure could be maintained with a high Pb doping level of up to x=0.3 in Sr2-xPbxIrO4. The mapping data obtained from energy-dispersive x-ray spectroscopy analyses give solid evidence that the Pb ions are uniformly distributed in the Sr2IrO4matrix. The incorporation of Pb leads to a moderate depression of the canted antiferromagnetic ordering state. The electrical conductivity could be greatly enhanced when the Pb doping content is higher than x=*** present results give a fresh material base to explore new physics in doped Sr2IrO4systems.

关键词： iridates doping conductivity magnetism

Multi-region calcium imaging in freely behaving mice with ultra-compact head-mounted fluorescence microscopes

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National science Review 2024年第1期11卷 161-173页

作者： Feng Xue Fei Li Ke-ming Zhang Lufeng Ding Yang Wang Xingtao Zhao Fang Xu Danke Zhang Mingzhai Sun Pak-Ming Lau Qingyuan Zhu Pengcheng Zhou Guo-Qiang Bi Department of Precision Machinery and Precision Instruments University of Science and Technology of China Hefei National Laboratory for Physical sciences at the Microscale University of Science and Technology of China Interdisciplinary center for brain Information the Brain Cognition and Brain Disease Institute Shenzhen Institute of Advanced Technology Chinese Academy of Sciences Faculty of Life and Health sciences Shenzhen Institutes of Advanced Technology Chinese Academy of Sciences School of Life sciences University of Science and Technology of China Institute of Semiconductors Chinese Academy of Sciences Department of Modern Life sciences and Biotecnology Xiongan Institute of Innovation Xiongan New Area Shenzhen-Hong Kong Institute of brain science-Shenzhen Fundamental Research Institutions Suzhou Institute for Advanced Research University of Science and Technology of China Institute of Artiflcial Intelligence Hefei Comprehensive National Science Center

To investigate the circuit-level neural mechanisms of behavior, simultaneous imaging of neuronal activity in multiple cortical and subcortical regions is highly desired. Miniature head-mounted microscopes offer the capability of calcium imaging in freely behaving animals. However, implanting multiple microscopes on a mouse brain remains challenging due to space constraints and the cumbersome weight of the ***, we present TINIscope, a Tightly Integrated Neuronal Imaging microscope optimized for electronic and opto-mechanical design. With its compact and lightweight design of 0.43 g, TINIscope enables unprecedented simultaneous imaging of behavior-relevant activity in up to four brain regions in ***-of-concept experiments with TINIscope recorded over 1000 neurons in four hippocampal subregions and revealed concurrent activity patterns spanning across these regions. Moreover, we explored potential multi-modal experimental designs by integrating additional modules for optogenetics, electrical stimulation or local field potential recordings. Overall, TINIscope represents a timely and indispensable tool for studying the brain-wide interregional coordination that underlies unrestrained behaviors.

关键词： miniature microscope multiple sites calcium imaging multimodal integration hippocampus

High precision current mirror circuit based on two-dimensional material transistors

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science China(Information sciences) 2024年第8期67卷 353-354页

作者： Shiping GAO Chen PAN Pincheng SU Xing-Jian YANGDONG Wentao YU Zhoujie ZENG Yu SHEN Jingwen SHI Yanwei CUI Pengfei WANG Yuekun YANG Cong WANG Bing CHENG Shi-Jun LIANG Feng MIAO Institute of Interdisciplinary Physical sciences School of Physics Nanjing University of Science and Technology Institute of brain-Inspired Intelligence National Laboratory of Solid State Microstructures School of PhysicsCollaborative Innovation Center of Advanced Microstructures

The emerging two-dimensional field-effect transistor(2DFET) is considered an important candidate device for driving future integrated circuit technology toward higher performance, lower power consumption, and more functionalities [1,2]. Among the integrated circuits, analog circuits play a crucial role as they are responsible for sampling, amplifying, and transmitting signals.

关键词： Timing circuits

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Peripheral Mechanism of Cancer-Induced Bone Pain

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Neuroscience Bulletin 2024年第6期40卷 815-830页

作者： Yachen Yang Wei Yang Ruofan Zhang Yanqing Wang Department of Integrative Medicine and Neurobiology School of Basic Medical SciencesShanghai Medical CollegeInstitute of Acupuncture ResearchInstitutes of Integrative MedicineFudan UniversityShanghai200032China Shanghai Key Laboratory of Acupuncture Mechanism and Acupoint Function Shanghai Key Laboratory of Medical Neurobiology and MOE Frontiers Center for Brain ScienceInstitutes of Brain ScienceFudan UniversityShanghai200032China Zhongshan-Fudan Joint innovation center Zhongshan528437China

Cancer-induced bone pain(CIBP)is a type of ongoing or breakthrough pain caused by a primary bone tumor or bone *** constitutes a specific pain state with distinct characteristics;however,it shares similarities with inflammatory and neuropathic *** present,although various therapies have been developed for this condition,complete relief from CIBP in patients with cancer is yet to be ***,it is urgent to study the mechanism underlying CIBP to develop efficient analgesic ***,we focused on the peripheral mechanism associated with the initiation of CIBP,which involves tissue injury in the bone and changes in the tumor microenvironment(TME)and dorsal root *** nerve–cancer and cancer–immunocyte cross-talk in the TME creates circumstances that promote tumor growth and metastasis,ultimately leading to *** peripheral mechanism of CIBP and current treatments as well as potential therapeutic targets are discussed in this review.

关键词： Cancer-induced bone pain Peripheral mechanism Tumor microenvironment Sensory nerve Immunocytes

Improving the electrical performances of InSe transistors by interface engineering

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Chinese Physics B 2024年第4期33卷 153-158页

作者：曹天俊郝松吴晨晨潘晨戴玉頔程斌梁世军缪峰 Institute of brain-Inspired Intelligence National Laboratory of Solid State MicrostructuresSchool of PhysicsCollaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210093China Institute of Interdisciplinary Physical sciences School of PhysicsNanjing University of Science and TechnologyNanjing 210014China

InSe has emerged as a promising candidate for next-generation electronics due to its predicted ultrahigh electrical ***,the efficacy of the InSe transistor in meeting application requirements is hindered due to its sensitivity to *** this study,we have achieved notable enhancement in the electrical performance of InSe transistors through interface *** engineered an InSe/h-BN heterostructure,effectively suppressing dielectric layer-induced ***,we successfully established excellent metal-semiconductor contacts using graphene ribbons as a buffer *** a methodical approach to interface engineering,our graphene/InSe/h-BN transistor demonstrates impressive on-state current,field-effect mobility,and on/off ratio at room temperature,reaching values as high as 1.1 mA/μm,904 cm^(2)·V^(-1)·s^(-1),and>10~6,*** computations corroborate that the graphene/InSe heterostructure shows significant interlayer charge transfer and weak interlayer interaction,contributing to the enhanced performance of InSe *** research offers a comprehensive strategy to elevate the electrical performance of InSe transistors,paving the way for their utilization in future electronic applications.

关键词： two-dimensional materials InSe van der Waals heterostructure electrical performances charge density difference

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Ultrasensitive Mechanical Sensor Using Tunable Ordered Array of Metallic and Insulating States in Vanadium Dioxide

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Chinese Physics Letters 2024年第7期41卷 74-86页

作者：马泽成闫胜楠陈繁强戴玉頔刘增霖徐康徐涛童湛钦陈墨雨王利铮王鹏飞孙立涛程斌梁世军缪峰 Institute of brain-Inspired Intelligence National Laboratory of Solid State MicrostructuresSchool of PhysicsCollaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210093China SEU-FEI Nano-Pico center Key Laboratory of MEMS of Ministry of EducationSoutheast UniversityNanjing 210096China Institute of Interdisciplinary of Physical sciences School of ScienceNanjing University of Science and TechnologyNanjing 210094China

Detecting tiny deformations or vibrations, particularly those associated with strains below 1%, is essential in various technological applications. Traditional intrinsic materials, including metals and semiconductors, face challenges in simultaneously achieving initial metallic state and strain-induced insulating state, hindering the development of highly sensitive mechanical sensors. Here we report an ultrasensitive mechanical sensor based on a strain-induced tunable ordered array of metallic and insulating states in the single-crystal bronze-phase vanadium dioxide [VO_(2)(B)] quantum material. It is shown that the initial metallic state in the VO_(2)(B) flake can be tuned to the insulating state by applying a weak uniaxial tensile strain. Such a unique property gives rise to a record-high gauge factor of above 607970, surpassing previous values by an order of magnitude, with excellent linearity and mechanical resilience as well as durability. As a proof-of-concept application, we use our proposed mechanical sensor to demonstrate precise sensing of the micro piece, gentle airflows and water droplets. We attribute the superior performance of the sensor to the strain-induced continuous metal-insulator transition in the single-crystal VO_(2)(B) flake, evidenced by experimental and simulation results. Our findings highlight the potential of exploiting correlated quantum materials for next-generation ultrasensitive flexible mechanical sensors, addressing critical limitations in traditional materials.

关键词： metallic durability hinder

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Anisotropic metal–insulator transition in strained VO_(2)(B) single crystal

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Chinese Physics B 2024年第6期33卷 56-61页

作者：马泽成闫胜楠刘增霖徐涛陈繁强陈思成曹天俊孙立涛程斌梁世军缪峰 Institute of brain-Inspired Intelligence National Laboratory of Solid State MicrostructuresSchool of PhysicsCollaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210093China SEU-FEI Nano-Pico center Key Laboratory of MEMS of Ministry of EducationSoutheast UniversityNanjing 210096China Institute of Interdisciplinary of Physical sciences School of ScienceNanjing University of Science and TechnologyNanjing 210094China

Mechanical strain can induce noteworthy structural and electronic changes in vanadium dioxide, imparting substantial scientific importance to both the exploration of phase transitions and the development of potential technological applications. Unlike the traditional rutile(R) phase, bronze-phase vanadium dioxide [VO_(2)(B)] exhibits an in-plane anisotropic structure. When subjected to stretching along distinct crystallographic axes, VO_(2)(B) may further manifest the axial dependence in lattice–electron interactions, which is beneficial for gaining insights into the anisotropy of electronic ***, we report an anisotropic room-temperature metal–insulator transition in single-crystal VO_(2)(B) by applying in-situ uniaxial tensile strain. This material exhibits significantly different electromechanical responses along two anisotropic *** reveal that such an anisotropic electromechanical response mainly arises from the preferential arrangement of a straininduced unidirectional stripe state in the conductive channel. This insulating stripe state could be attributed to the in-plane dimerization within the distorted zigzag chains of vanadium atoms, evidenced by strain-modulated Raman spectra. Our work may open up a promising avenue for exploiting the anisotropy of metal–insulator transition in vanadium dioxide for potential technological applications.

关键词： vanadium dioxide strain anisotropy electrical transport

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SpikingMiniLM: energy-efficient spiking transformer for natural language understanding

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science China(Information sciences) 2024年

作者： Jiayu ZHANG Jiangrong SHEN Zeke WANG Qinghai GUO Rui YAN Gang PAN Huajin TANG College of Computer science and Technology Zhejiang University The State Key Lab of brain-Machine Intelligence Zhejiang University collaborative innovation center of Artificial Intelligence Zhejiang University Advanced Computing and Storage Laboratory Huawei Technologies Co. Ltd. College of Computer science and Technology Zhejiang University of Technology MOE Frontier science center for brain science and brain-Machine Integration Zhejiang University

In the era of large-scale pretrained models, artificial neural networks (ANNs) have excelled in natural language understanding (NLU) tasks. However, their success often necessitates substantial computational resources and energy consumption. To address this, we explore the potential of spiking neural networks (SNNs) in NLU—a promising avenue with demonstrated advantages, including reduced power consumption and improved efficiency due to their event-driven characteristics. We propose the SpikingMiniLM,a novel spiking Transformer model tailored for natural language understanding. We first introduce a multistep encoding method to convert text embeddings into spike trains. Subsequently, we redesign the attention mechanism and residual connections to make our model operate on the pure spike-based paradigm without any normalization technique. To facilitate stable and fast convergence, we propose a general parameter initialization method grounded in the stable firing rate principle. Furthermore, we apply an ANN-to-SNN knowledge distillation to overcome the challenges of pretraining SNNs. Our approach achieves a macroaverage score of 75.5 on the dev sets of the GLUE benchmark, retaining 98%of the performance exhibited by the teacher model MiniLMv2. Our smaller model also achieves similar performance to BERTMINIwith fewer parameters and much lower energy consumption, underscoring its competitiveness and resource efficiency in NLU tasks.

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Pressure-induced magnetic phase and structural transition in SmSb2

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Chinese Physics B 2024年第6期33卷 484-489页

作者：李涛王舒阳陈绪亮陈春华房勇杨昭荣 science Island Branch of Graduate School University of Science and Technology of China Anhui Key Laboratory of Low-Energy Quantum Materials and Devices High Magnetic Field LaboratoryHFIPS Chinese Academy of Sciences Jiangsu Laboratory of Advanced Functional Materials Department of Physics Changshu Institute of Technology institutes of Physical science and Information Technology Anhui University collaborative innovation center of Advanced Microstructures

Motivated by the recent discovery of unconventional superconductivity around a magnetic quantum critical point in pressurized CeSb2,here we present a high-pressure study of an isostructural antiferromagnetic（AFM） SmSb2through electrical transport and synchrotron x-ray diffraction *** PC～2.5 GPa,we found a pressure-induced magnetic phase transition accompanied by a Cmca→P4/nmm structural phase *** the pristine AFM phase below PC,the AFM transition temperature of SmSb2is insensitive to pressure;in the emergent magnetic phase above PC,however,the magnetic critical temperature increases rapidly with increasing *** addition,at ambient pressure,the magnetoresistivity（MR） of SmSb2increases suddenly upon cooling below the AFM transition temperature and presents linear nonsaturating behavior under high field at 2 *** increasing pressure above PC,the MR behavior remains similar to that observed at ambient pressure,both in terms of temperature-and field-dependent *** leads us to argue an AFM-like state for SmSb2above *** the investigated pressure of up to 45.3 GPa and the temperature of down to 1.8 K,we found no signature of superconductivity in SmSb2.

关键词： high pressure antiferromagnet magnetoresistivity structural transition