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Contact engineering for temperature stability improvement of Bi-contacted MoS2 field effect transistors

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Science China(Information Sciences) 2024年第06期67卷 172-179页

作者： Zizheng LIU Qing ZHANG Xiaohe HUANG Chunsen LIU Peng ZHOU State Key Laboratory of Integrated Chip and Systems School of MicroelectronicsZhangjiang Fudan International Innovation CenterFudan University Frontier Institute of Chip and System Shanghai Key Lab for Future Computing Hardware and SystemFudan University Shaoxin Laboratory

Semimetallic bismuth（Bi） is one of the most effective strategies for reducing the contact resistance of two-dimensional transition metal dichalcogenide field effect transistors（FETs）. However, the low melting point of Bi contact（271.5℃） limits its reliable applications. In this study, we demonstrated that the temperature stability of Bi-contacted electrodes could be improved by inserting a high-melting point semimetallic antimony（Sb） between the Bi contacting layer and the gold（Au） capping layer. The proposed Bi/Sb/Au contact electrodes tended to form a metal mixture with a continuous surface during the heating process（Voids appeared on the surface of the Bi/Au contact electrodes after heating at 120℃）. Because of the improved contacting layer formed by the semimetal Bi/Sb alloy, the fabricated Bi/Sb/Au-contacted molybdenum sulfide（MoS2） FETs with different gate lengths demonstrated higher on-state current stability after heating treatment than the Bi/Au contact. Because of the Bi/Sb/Au contact and poly（methyl methacrylate） package, the MoS2FETs demonstrated time stability of at least two months from the almost unchanged transfer characteristics. The electrical stability indicates that the insertion of semimetallic Sb is a promising technology for reliable Bi-based contact.

关键词： temperature stability semimetallic bismuth contact semimetallic antimony contact MoS$_{2}$ FETs time stability

Millimeter-wave PA design techniques in ISSCC 2024

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Journal of Semiconductors 2024年第4期45卷 16-18页

作者： Yun Wang Hongtao Xu State Key Laboratory of Integrated Chips and Systems School of MicroelectronicsFudan UniversityShanghai 201203China

Millimeter-wave systems with high integration level have been rapidly developed to enable modern wireless communication,sensing,and *** millimeter-wave power amplifier(PA)is one of the most challenging and critical components in a millimeter-wave transceiver,it is the last active stage in a transmitter amplifying spectrally efficient complex modulation signal for radiation with high output power.

关键词： millimeter Millimeter ISSCC

Organic heterojunction synaptic device with ultra high recognition rate for neuromorphic computing

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Nano Research 2024年第6期17卷 5614-5620页

作者： Xuemeng Hu Jialin Meng Tianyang Feng Tianyu Wang Hao Zhu Qingqing Sun David Wei Zhang Lin Chen School of microelectronics State Key Laboratory of Integrated Chips and SystemsFudan UniversityShanghai 200433China National Integrated Circuit Innovation Center Shanghai 201203China

Traditional computing structures are blocked by the von Neumann bottleneck,and neuromorphic computing devices inspired by the human brain which integrate storage and computation have received more and more ***,a flexible organic device with 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene(C8-BTBT)and 2,9-didecyldinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene(C10-DNTT)heterostructural channel having excellent synaptic behaviors was fabricated on muscovite(MICA)substrate,which has a memory window greater than 20 *** device shows better electrical characteristics than organic field effect transistors with single organic semiconductor ***,the device simulates organism synaptic behaviors successfully,such as paired-pulse facilitation(PPF),long-term potentiation/depression(LTP/LTD)process,and transition from short-term memory(STM)to long-term memory(LTM)by optical and electrical ***,the neuromorphic computing function was verified using the Modified National Institute of Standards and Technology(MNIST)pattern recognition,with a recognition rate nearly 100%without *** research proposes a flexible organic heterojunction with the ultra-high recognition rate in MNIST pattern recognition and provides the possibility for future flexible wearable neuromorphic computing devices.

关键词： organic heterojunction neuromorphic computing synapse behaviors optical modulation Modified National Institute of Standards and Technology(MNIST)pattern recognition

Reconfigurable and polarization-dependent optical filtering for transflective full-color generation utilizing low-loss phase-change materials

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Journal of Semiconductors 2024年第7期45卷 46-53页

作者： Shuo Deng Mengxi Cui Jingru Jiang Chuang Wang Zengguang Cheng Huajun Sun Ming Xu Hao Tong Qiang He Xiangshui Miao School of Integrated Circuits Huazhong University of Science and TechnologyWuhan 430074China Hubei Yangtze Memory Laboratories Wuhan 430205China School of microelectronics Fudan UniversityShanghai 200433China

All-dielectric metasurface, which features low optical absorptance and high resolution, is becoming a promising candidate for full-color generation. However, the optical response of current metamaterials is fixed and lacks active tuning. In this work, we demonstrate a reconfigurable and polarization-dependent active color generation technique by incorporating low-loss phase change materials(PCMs) and CaF_2 all-dielectric substrate. Based on the strong Mie resonance effect and low optical absorption structure, a transflective, full-color with high color purity and gamut value is achieved. The spectrum can be dynamically manipulated by changing either the polarization of incident light or the PCM state. High transmittance and reflectance can be simultaneously achieved by using low-loss PCMs and substrate. The novel active metasurfaces can bring new inspiration in the areas of optical encryption, anti-counterfeiting, and display technologies.

关键词： structural color reconfigurable all-dielectric metasurfaces phase change material

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Graphene oxide/Al_(2)O_(3)-based diffusive memristor cells:enabling robust crossbar arrays for multidisciplinary applications

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Rare Metals 2024年第8期43卷 3997-4005页

作者： Chen Liu Jun-Cheng Jin Yi-Ke Xiao Xin-Xin Wang Ping-Yuan Yan Yan-Qiang Cao Li-Yong Jiang Chuan-Xiang Sheng Ye-Feng Yu School of microelectronics Nanjing University of Science and TechnologyNanjing 210094China School of Science Nanjing University of Science and TechnologyNanjing210094China School of Information Science and Technology Fudan UniversityShanghai 200433China

A memristor crossbar array (MCA) has emerged as a cutting-edge platform for advanced memory and neuromorphic computing hardware,offering unrivaled bit-level storage density.A diffusive memristor cell (DMC) is particularly well-suited for MCA integration due to its inherent threshold switching characteristics as a selector,effectively addressing current sneak path *** DMC's potential is acknowledged,it necessitates furtherexploration of their practical applicability.

关键词： crossbar arrays offering

InGaZnO-based photoelectric synaptic devices for neuromorphic computing

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Journal of Semiconductors 2024年第9期45卷 42-47页

作者： Jieru Song Jialin Meng Tianyu Wang Changjin Wan Hao Zhu Qingqing Sun David Wei Zhang Lin Chen School of microelectronics State Key Laboratory of Integrated Chips and SystemsFudan UniversityShanghai 200433China School of Integrated Circuits Shandong UniversityJinan 250100China National Integrated Circuit Innovation Center Shanghai 201203China School of Electronic Science and Engineering Nanjing UniversityNanjing 210023China Jiashan fudan Institute Jiashan 314102China

Photoelectric synaptic devices could emulate synaptic behaviors utilizing photoelectric effects and offer promising prospects with their high-speed operation and low crosstalk. In this study, we introduced a novel InGaZnO-based photoelectric memristor. Under both electrical and optical stimulation, the device successfully emulated synaptic characteristics including excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), long-term potentiation (LTP), and long-term depression (LTD). Furthermore, we demonstrated the practical application of our synaptic devices through the recognition of handwritten digits. The devices have successfully shown their ability to modulate synaptic weights effectively through light pulse stimulation, resulting in a recognition accuracy of up to 93.4%. The results illustrated the potential of IGZO-based memristors in neuromorphic computing, particularly their ability to simulate synaptic functionalities and contribute to image recognition tasks.

关键词： InGaZnO artificial synapse neuromorphic computing photoelectric memristor

Multiframe-integrated, in-sensor computing using persistent photoconductivity

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Journal of Semiconductors 2024年第9期45卷 36-41页

作者： Xiaoyong Jiang Minrui Ye Yunhai Li Xiao Fu Tangxin Li Qixiao Zhao Jinjin Wang Tao Zhang Jinshui Miao Zengguang Cheng School of microelectronics Fudan UniversityShanghai 200433China Hangzhou Institute for Advanced Study University of Chinese Academy of SciencesHangzhou 310024China University of Chinese Academy of Sciences Beijing 100049China School of Information Science and Technology ShanghaiTech UniversityShanghai 201210China

The utilization of processing capabilities within the detector holds significant promise in addressing energy consumption and latency challenges. Especially in the context of dynamic motion recognition tasks, where substantial data transfers are necessitated by the generation of extensive information and the need for frame-by-frame analysis. Herein, we present a novel approach for dynamic motion recognition, leveraging a spatial-temporal in-sensor computing system rooted in multiframe integration by employing photodetector. Our approach introduced a retinomorphic MoS_(2) photodetector device for motion detection and analysis. The device enables the generation of informative final states, nonlinearly embedding both past and present frames. Subsequent multiply-accumulate (MAC) calculations are efficiently performed as the classifier. When evaluating our devices for target detection and direction classification, we achieved an impressive recognition accuracy of 93.5%. By eliminating the need for frame-by-frame analysis, our system not only achieves high precision but also facilitates energy-efficient in-sensor computing.

关键词： in-sensor MoS2 photodetector persistent photoconductivity reservoir computing

TSCompiler: efficient compilation framework for dynamic-shape models

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Science China(Information Sciences) 2024年

作者： Xiang LUO Chen ZHANG Chenbo GENG Yanzhi YI Jiahui HU Renwei ZHANG Zhen ZHANG Gianpietro CONSOLARO Fan YANG Tun LU Ning GU Li SHANG School of Computer Science Fudan University School of Electronic Information and Electrical Engineering Shanghai Jiao Tong University School of Computer Science and Technology Harbin Institute of Technology Huawei Technologies Co. Ltd. Huawei Paris Research Center School of microelectronics Fudan University

Today's deep learning models face an increasing demand to handle dynamic shape tensors and computation whose shape information remains unknown at compile time and varies in a nearly infinite range at runtime. This shape dynamism brings tremendous challenges for existing compilation pipelines designed for static models which optimize tensor programs relying on exact shape values. This paper presents TSCompiler, an end-to-end compilation framework for dynamic shape models. TSCompiler first proposes a symbolic shape propagation algorithm to recover symbolic shape information at compile time to enable subsequent optimizations. TSCompiler then partitions the shape-annotated computation graph into multiple subgraphs and fine-tunes the backbone operators from the subgraph within a hardware-aligned search space to find a collection of high-performance schedules. TSCompiler can propagate the explored backbone schedule to other fusion groups within the same subgraph to generate a set of parameterized tensor programs for fused cases based on dependence analysis. At runtime, TSCompiler utilizes an occupancy-targeted cost model to select from pre-compiled tensor programs for varied tensor shapes. Extensive evaluations show that TSCompiler can achieve state-of-the-art speedups for dynamic shape models. For example, we can improve kernel efficiency by up to 3.97× on NVIDIA RTX3090, and 10.30× on NVIDIA A100 and achieve up to five orders of magnitude speedups on end-to-end latency.

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Memristive switching in the surface of a charge-density-wave topological semimetal

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Science Bulletin 2024年第13期69卷 2042-2049页

作者： Jianwen Ma Xianghao Meng Binhua Zhang Yuxiang Wang Yicheng Mou Wenting Lin Yannan Dai Luqiu Chen Haonan Wang Haoqi Wu Jiaming Gu Jiayu Wang Yuhan Du Chunsen Liu Wu Shi Zhenzhong Yang Bobo Tian Lin Miao Peng Zhou Chun-Gang Duan Changsong Xu Xiang Yuan Cheng Zhang State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing Fudan UniversityShanghai 200433China State Key Laboratory of Precision Spectroscopy East China Normal UniversityShanghai 200241China Key Laboratory of Computational Physical Sciences(Ministry of Education) Institute of Computational Physical SciencesState Key Laboratory of Surface PhysicsDepartment of PhysicsFudan UniversityShanghai 200433China Shanghai Qi Zhi Institute Shanghai 200030China School of Physics Southeast UniversityNanjing 211189China Key Laboratory of Polar Materials and Devices(Ministry of Education) Department of ElectronicsEast China Normal UniversityShanghai 200241China Shanghai Center of Brain–inspired Intelligent Materials and Devices East China Normal UniversityShanghai 200241China State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China Frontier Institute of Chip and System Fudan UniversityShanghai 200433China Zhangjiang fudan International Innovation Center Fudan UniversityShanghai 201210China School of Physics and Electronic Science East China Normal UniversityShanghai 200241China

Owing to the outstanding properties provided by nontrivial band topology,topological phases of matter are considered as a promising platform towards low-dissipation electronics,efficient spin-charge conversion,and topological quantum *** ferroelectricity in topological materials enables the non-volatile control of the quantum states,which could greatly facilitate topological electronic ***,ferroelectricity is generally incompatible with systems featuring metallicity due to the screening effect of free *** this study,we report the observation of memristive switching based on the ferroelectric surface state of a topological semimetal(TaSe_(4))*** find that the surface state of(TaSe_(4))2I presents out-of-plane ferroelectric polarization due to surface *** the combination of ferroelectric surface and charge-density-wave-gapped bulk states,an electric-switchable barrier height can be achieved in(TaSe_(4))2I-metal *** employing a multi-terminal-grounding design,we manage to construct a prototype ferroelectric memristor based on(TaSe_(4))2I with on/off ratio up to 103,endurance over 103 cycles,and good retention *** origin of the ferroelectric surface state is further investigated by first-principles calculations,which reveal an interplay between ferroelectricity and band *** emergence of ferroelectricity in(TaSe_(4))2I not only demonstrates it as a rare but essential case of ferroelectric topological materials,but also opens new routes towards the implementation of topological materials in functional electronic devices.

关键词： Topological semimetal Schottky barrier Surface ferroelectricity Memristor