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Mechanical-electrical synergy damage effect on GaN HEMT under high-power microwave

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Science China(Technological Sciences) 2023年第8期66卷 2373-2380页

作者： WANG Lei CHAI ChangChun ZHAO TianLong LI FuXing QIN YingShuo YANG YinTang key laboratory of Ministry of Education for wide band-gap semiconductor Materials and Devices School of MicroelectronicsXidian UniversityXi’an 710071China

High-power microwave damage to enhanced-mode Ga N high electron mobility transistors(HEMT)is studied considering the mechanical-electrical synergy effect due to the strong piezoelectric properties of Ga N,which has a wurtzite crystal structure.Based on the piezoelectric constitutive equation,the mechanical and electrical energies were equivalently coupled,and the effective numerical model was built in the simulation software.The results indicated that a part of the electrical energy was stored in the device as a form of elastic energy,causing the burnout time of Ga N HEMT to be extended.The effects of different injection voltages and frequencies were analyzed,and the results revealed that elastic energy plays a different role during the process of device damage.These results are of great significance for the design of Ga N HEMTs with better reliability in harsh electromagnetic environments and for improving their protection design.

关键词： GaN HEMT mechanical-electrical synergy damage electromechanical coupling elastic energy high-power microwave

A New Parameter Extraction Method for Schottky Barrier Diodes

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Chinese Journal of Electronics 2019年第3期28卷 497-502页

作者： CHANG Yongming MAO Wei HAO Yue State key Discipline laboratory of wide band gap semiconductor Technologies Department of MicroelectronicsXidian University

A new parameter extraction method for Schottky barrier diodes is provided in this paper.Since the current model of Schottky barrier diodes is a nonlinear self-consistent equation, the nonlinear inconsistent equations set is composed of nonlinear model equations under different biases. The problem of solving nonlinear inconsistent equations set is transformed into an optimization problem. The global optimal solution of the parameters is obtained by genetic algorithm. Comparing with experimental data, the results indicate that the error of the method proposed by this paper is lower than that of Cheung method.

关键词： Schottky barrier diodes Parameter extraction Genetic algorithm

Fabrication of InAlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates by Pulsed Metal Organic Chemical Vapor Deposition

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Chinese Physics Letters 2016年第10期33卷 145-148页

作者：全汝岱张进成张雅超张苇航任泽阳郝跃 key laboratory of wide band-gap semiconductor Technology School of MicroelectronicsXidian University

Nearly lattice-matched InAlGaN/GaN heterostructure is grown on sapphire substrates by pulsed metal organic chemical vapor deposition and excellent high electron mobility transistors are fabricated on this heterostructure.The electron mobility is 1668.08cm^2/V·s together with a high two-dimensionai-eiectron-gas density of 1.43 ×10^(13) cm^(-2) for the InAlGaN/GaN heterostructure of 20 nm InAlGaN quaternary barrier.High electron mobility transistors with gate dimensions of 1 × 50 μm^2 and 4 μm source-drain distance exhibit the maximum drain current of 763.91 mA/mm,the maximum extrinsic transconductance of 163.13 mS/mm,and current gain and maximum oscillation cutoff frequencies of 11 GHz and 21 GHz,respectively.

关键词： ina1gan /氮化镓高电子迁移率晶体管脉冲金属有机化学气相沉积蓝宝石衬底

Breakdown voltage and current collapse of F-plasma treated AlGaN/GaN HEMTs

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Journal of semiconductors 2014年第1期35卷 61-64页

作者：王冲陈冲何云龙郑雪峰马晓华张进成毛维郝跃 key laboratory of wide band gap semiconductor Materials and Devices School of Microelectronics

The breakdown and the current collapse characteristics of high electron mobility transistors(HEMTs)with a low power F-plasma treatment process are investigated. With the increase of F-plasma treatment time, the saturation current decreases, and the threshold voltage shifts to the positive slightly. Through analysis of the Schottky characteristics of the devices with different F-plasma treatment times, it was found that an optimal F-plasma treatment time of 120 s obviously reduced the gate reverse leakage current and improved the breakdown voltage of the devices, but longer F-plasma treatment time than 120 s did not reduce gate reverse leakage current due to plasmadamage.ThecurrentcollapsecharacteristicsoftheHEMTswithF-plasmatreatmentwereevaluatedbydual pulse measurement at different bias voltages and no obvious deterioration of current collapse were found after low power F-plasma treatment.

关键词：等离子体处理 HEMT器件电流崩塌击穿电压 AlGaN 高电子迁移率晶体管反向漏电流饱和电流

High mobility germanium-on-insulator p-channel FinFETs

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Science China(Information Sciences) 2021年第4期64卷 241-242页

作者： Huan LIU Genquan HAN Jiuren ZHOU Yan LIU Yue HAO State key Discipline laboratory of wide band gap semiconductor Technology School of MicroelectronicsXidian University

Dear editor,Over the past decade, germanium has attracted great interest as a promising channel material for p-channel metal oxide semiconductor field-effect-transistor (MOSFET), owing to its higher hole mobility over... 详细信息

关键词： ZrO2 High Mobility P-Channel FinFET Germanium on Insulator

Regulation of the photogenerated carrier transfer process during photoelectrochemical water splitting:A review

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Green Energy & Environment 2021年第4期6卷 479-495页

作者： Yaping Zhang Yuyu Bu Lin Wang Jin-Ping Ao key laboratory of wide band-gap semiconductor Materials and Devices School of MicroelectronicsXidian UniversityXi'an710071China

Photoelectrochemical(PEC)water splitting is considered as an ideal technology to produce hydrogen.Photogenerated carrier migration is one of the most important roles in the whole process of PEC water splitting.It includes bulk transfer inside of the photoelectrode and the exchange at the solid-liquid interface.The energy barriers during the migration process lead to the dramatic recombination of photogenerated hot carrier and the reducing of their redox capacity.Thus,an applied bias voltage should be provided to overcome these energy barriers,which brings the additional loss of energy.Plentiful researches indicate that some methods for the regulation of photogenerated hot carrier,such as p-n junction,unique transfer nanochannel,tandem nanostructure and Z-Scheme transfer structure et al.,show great potential to achieve high-efficient PEC water overall splitting without any applied bias voltage.Up to now,many reviews have summarized and analyzed the methods to enhance the PEC or photocatalysis water splitting from the perspectives of materials,nanostructures and surface modification etc.However,few of them focus on the topic of photogenerated carrier transfer regulation,which is an important and urgent developing technique.For this reason,this review focuses on the regulation of photogenerated carriers generated by the photoelectrodes and summarizes different advanced methods for photogenerated carrier regulation developed in recent years.Some comments and outlooks are also provided at the end of this review.

关键词： PEC water Splitting Photogenerated carrier migration Charge transfer regulation Energy band engineering Solid-liquid interface modification

Design of a CMOS multi-mode GNSS receiver VCO

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Journal of semiconductors 2012年第5期33卷 99-104页

作者：龙强庄奕琪阴玥李振荣 national key laboratory of wide band-gap semiconductor Technology School of MicroelectronicsXidian University

A voltage-controlled oscillator(VCO) with dual stages of accumulation mode varactors for a multimode global navigation satellite system(GNSS) application,which adopts sigma-delta fractional-N technology in the synthesizer,is presented.The structure is selected to optimize the frequency coverage and tuning linearity, based on a general analysis of the parasitic capacitance in the coarse tuning switch bank cells,which cover the global positioning system(GPS) and Beidou(BD) bands.The VCO implemented in the 0.18μm CMOS process can cover the GPS L1,BD B1,B2 and B3 bands with sufficient margin,and exhibits low phase noise by using this tuning curve linearization technique.The equalized K_(vco),characteristic behavior further offers a wide voltage tuning range and improves the stability of the closed loop.

关键词： GNSS接收机 CMOS VCO 多模全球导航卫星系统设计全球定位系统调谐曲线

Nonlinear characterization of GaN HEMT

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Journal of semiconductors 2010年第11期31卷 18-23页

作者：陈炽郝跃杨凌全思马晓华张进城 national key laboratory of wide band-gap semiconductor Technology School of MicroelectronicsXidian University

DC I-V output,small signal and an extensive large signal characterization(load-pull measurements) of a GaN HEMT on a SiC substrate with different gate widths of 100μm and 1 mm have been carried out.From the small signal data,it has been found that the cutoff frequencies increase with gate width varying from 100μm to 1 mm,owing to the reduced contribution of the parasitic effect.The devices investigated with different gate widths are enough to work in the C band and X band.The large signal measurements include the load-pull measurements and power sweep measurements at the C band(5.5 GHz) and X band(8 GHz).When biasing the gate voltage in class AB and selecting the source impedance,the optimum load impedances seen from the device for output power and PAE were localized in the load-pull map.The results of a power sweep at an 8 GHz biased various drain voltage demonstrate that a GaN HEMT on a SiC substrate has good thermal conductivity and a high breakdown voltage,and the CW power density of 10.16 W/mm was obtained.From the results of the power sweep measurement at 5.5 GHz with different gate widths, the actual scaling rules and heat effect on the large periphery device were analyzed,although the effects are not serious. The measurement results and analyses prove that a GaN HEMT on a SiC substrate is an ideal candidate for high-power amplifier design.

关键词： HEMT器件 GaN 非线性特性扫描测量输出功率周边设备栅极电压放大器设计

High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation

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Science China(Information Sciences) 2023年第12期66卷 297-298页

作者： Yutong FAN Xi LIU Ren HUANG Yu WEN Weihang ZHANG Jincheng ZHANG Zhihong LIU Shenglei ZHAO key laboratory of wide band-gap semiconductor Materials and Devices School of MicroelectronicsXidian University Guangzhou wide bandgap semiconductor Innovation Center Guangzhou Institute of TechnologyXidian University

GaN power devices have broad application prospects in fast charging systems, power supplies, data centers, and electric vehicles due to their high critical breakdown field strength, high switching frequency, and high conversion efficiency [1–3]. AlGaN/GaN/AlGaN double-heterostructure(DH) high-electron-mobility transistors(HEMTs) have been extensively studied owing to their low leakage current and low off-state power dissipation.

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