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Atomic transport dynamics in crossed optical dipole trap

Chinese Physics B 2024年第7期33卷 293-301页

作者：彭鹏张正熙樊耀塬殷国玲毛德凯陈徐宗熊炜周小计 State Key laboratory of Advanced Optical Communication System and Network School of ElectronicsPeking UniversityBeijing 100871China Institute of carbon-based thin film electronics Peking UniversityTaiyuan 030012China State Key laboratory of Quantum Optics and Quantum Optics Devices Institute of Opto-ElectronicsShanxi UniversityTaiyuan 030006China

We study the dynamical evolution of cold atoms in crossed optical dipole trap theoretically and experimentally. The atomic transport process is accompanied by two competitive kinds of physical mechanics, atomic loading and atomic loss.The loading process normally is negligible in the evaporative cooling experiment on the ground, while it is significant in preparation of ultra-cold atoms in the space station. Normally, the atomic loading process is much weaker than the atomic loss process, and the atomic number in the central region of the trap decreases monotonically, as reported in previous research. However, when the atomic loading process is comparable to the atomic loss process, the atomic number in the central region of the trap will initially increase to a maximum value and then slowly decrease, and we have observed the phenomenon first. The increase of atomic number in the central region of the trap shows the presence of the loading process, and this will be significant especially under microgravity conditions. We build a theoretical model to analyze the competitive relationship, which coincides with the experimental results well. Furthermore, we have also given the predicted evolutionary behaviors under different conditions. This research provides a solid foundation for further understanding of the atomic transport process in traps. The analysis of loading process is of significant importance for preparation of ultra-cold atoms in a crossed optical dipole trap under microgravity conditions.

关键词： cold atom crossed optical dipole trap transport process

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Gigahertz frequency hopping in an optical phase-locked loop for Raman lasers

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Chinese Physics B 2024年第2期33卷 60-65页

作者：毛德凯税鸿冕殷国玲彭鹏王春唯周小计 State Key laboratory of Advanced Optical Communication System and Network School of ElectronicsPeking UniversityBeijing 100871China Institute of carbon-based thin film electronics Peking UniversityTaiyuan 030012China State Key laboratory of Quantum Optics and Quantum Optics Devices Institute of Opto-ElectronicsShanxi UniversityTaiyuan 030006China Institute of Advanced Functional Materials and Devices Shanxi UniversityTaiyuan 030031China

Raman lasers are essential in atomic physics,and the development of portable devices has posed requirements for time-division multiplexing of Raman lasers.We demonstrate an innovative gigahertz frequency hopping approach of a slave Raman laser within an optical phase-locked loop(OPLL),which finds practical application in an atomic gravimeter,where the OPLL frequently switches between near-resonance lasers and significantly detuned Raman lasers.The method merges the advantages of rapid and extensive frequency hopping with the OPLL’s inherent low phase noise,and exhibits a versatile range of applications in compact laser systems,promising advancements in portable instruments.

关键词： Raman lasers optical phase-locked loop frequency hopping

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Comparative study of the extraction selectivity of PFO-BPy and PCz for small to large diameter single-walled carbon nanotubes

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Nano Research 2022年第9期15卷 8479-8485页

作者： Fang Liu Xingxing Chen Meiqi Xi Nan Wei Lan Bai Lianmao Peng Yu Cao Xuelei Liang Center for carbon-based electronics Peking UniversityBeijing 100871China Key laboratory for the Physics and Chemistry of Nanodevices School of ElectronicsPeking UniversityBeijing 100871China Shanxi Institute for carbon-based thin film electronics Peking University(SICTFE-PKU)Taiyuan 030012China taiyuan laboratory for carbon-based thin film electronics Taiyuan 030012China

Semiconducting single-walled carbon nanotubes(s-SWCNTs)are fascinating materials for future electronic and optical applications.Conjugated polymer wrapping is one of the most promising methods for mass production of high purity s-SWCNTs.However,its chiral selectivity is relatively inferior to other s-SWCNT production methods.In this paper,the chiral selectivity of two polymers,poly[(9,9-dioctylfluorenyl-2,7-diyl)-alt-co-(6,6′-{2,2′-bipyridine})](PFO-BPy)and poly[9-(1-octylonoyl)-9H-carbazole-2,7-diyl](PCz),which are representatives of widely used polyfluorene and polycarbazole families,respectively,were comparatively studied.Both polymers exhibited high selectivity for a subset of existing chiral species in each of the commercially available raw SWCNT materials(CoMoCAT,HiPco,and arc-discharge)which cover a diameter range of 0.6–1.8 nm.Less chiral species were selected by PFO-BPy from small diameter(1.2 nm)raw materials.High chiral purity(6,5)(>99%)and(7,5)(>75%)solutions were extracted by PFO-BPy and PCz from CoMoCAT materials,respectively.The different chiral angle and diameter selections for different raw materials by both polymers were ascribed to their different geometrical structures and related polymer-tube interactions.Our work provides indispensable information for better understanding the mechanism of polymer wrapping method and improving extraction of single chirality sSWCNTs.

关键词： carbon nanotube polymer wrapping poly[(9 9-dioctylfluorenyl-2 7-diyl)-alt-co-(6 6′-{2 2′-bipyridine})](PFO-BPy) poly[9-(1-octylonoyl)-9H-carbazole-2 7-diyl](PCz) chiral selectivity

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Electrically-driven ultrafast out-of-equilibrium light emission from hot electrons in suspended graphene/hBN heterostructures

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International Journal of Extreme Manufacturing 2024年第1期6卷 328-338页

作者： Qiang Liu Wei Xu Xiaoxi Li Tongyao Zhang Chengbing Qin Fang Luo Zhihong Zhu Shiqiao Qin Mengjian Zhu Kostya S Novoselov College of Advanced Interdisciplinary Studies&Hunan Provincial Key laboratory of Novel Nano-optoelectronic Information Materials and Devices National University of Defense TechnologyChangshaHunan 410073People’s Republic of China Nanhu Laser laboratory National University of Defense TechnologyChangshaHunan 410073People’s Republic of China State Key laboratory of Quantum Optics and Quantum Optics Devices Institute of Opto-ElectronicsShanxi UniversityTaiyuan 030006People’s Republic of China Collaborative Innovation Center of Extreme Optics Shanxi UniversityTaiyuan 030006People’s Republic of China State Key laboratory of Quantum Optics and Quantum Optics Devices Institute of Laser SpectroscopyShanxi UniversityTaiyuan 030006People’s Republic of China Institute for Functional Intelligent Materials National University of SingaporeSingapore 117544Singapore Department of Materials Science and Engineering National University of SingaporeSingapore 117575Singapore

Nanoscale light sources with high speed of electrical modulation and low energy consumption are key components for nanophotonics and optoelectronics.The record-high carrier mobility and ultrafast carrier dynamics of graphene make it promising as an atomically thin light emitter which can be further integrated into arbitrary platforms by van der Waals forces.However,due to the zero bandgap,graphene is difficult to emit light through the interband recombination of carriers like conventional semiconductors.Here,we demonstrate ultrafast thermal light emitters based on suspended graphene/hexagonal boron nitride(Gr/hBN)heterostructures.Electrons in biased graphene are significantly heated up to 2800 K at modest electric fields,emitting bright photons from the near-infrared to the visible spectral range.By eliminating the heat dissipation channel of the substrate,the radiation efficiency of the suspended Gr/hBN device is about two orders of magnitude greater than that of graphene devices supported on SiO2or hBN.Wefurther demonstrate that hot electrons and low-energy acoustic phonons in graphene are weakly coupled to each other and are not in full thermal equilibrium.Direct cooling ofhigh-temperature hot electrons to low-temperature acoustic phonons is enabled by the significant near-field heat transfer at the highly localized Gr/hBN interface,resulting in ultrafast thermal emission with up to 1 GHz bandwidth under electrical excitation.It is found thatsuspending the Gr/hBN heterostructures on the SiO2trenches significantly modifies the light emission due to the formation of the optical cavity and showed a~440%enhancement inintensity at the peak wavelength of 940 nm compared to the black-body thermal radiation.The demonstration of electrically driven ultrafast light emission from suspended Gr/hBNheterostructures sheds the light on applications of graphene heterostructures in photonicintegrated circuits,such as broadband light sources and ultrafast thermo-optic phase modulators.

关键词： suspended graphene ultrafast light emitter van der Waals heterostructures thermal radiation electron–phonon interaction

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通过应变工程提高有机半导体的迁移率

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Science China Materials 2024年第2期67卷 665-671页

作者：汪兆锋武显硕杨书院姚佳荣沈贤锋高丕超姚惜梦曾东李荣金胡文平 Key laboratory of Organic Integrated Circuit Ministry of Education&Tianjin Key Laboratory of Molecular Optoelectronic SciencesDepartment of ChemistrySchool of ScienceTianjin UniversityTianjin 300072China Collaborative Innovation Center of Chemical Science and Engineering(Tianjin) Tianjin 300072China Engineering Research Center of Coal-based Ecological carbon Sequestration Technology of the Ministry of Education Shanxi Datong UniversityDatong 037009China

有机半导体(OSCs)是推动柔性电子发展的关键.然而,其应用一直受到其较低迁移率的阻碍.虽然分子工程和器件工程可以提高OSC迁移率,但近年来进展几乎停滞不前.本研究揭示了有机半导体在应变下的层数依赖电荷输运特性,并通过应变工程可大... 详细信息

有机半导体(OSCs)是推动柔性电子发展的关键.然而,其应用一直受到其较低迁移率的阻碍.虽然分子工程和器件工程可以提高OSC迁移率,但近年来进展几乎停滞不前.本研究揭示了有机半导体在应变下的层数依赖电荷输运特性,并通过应变工程可大幅提高其迁移率.施加应变可以减小分子间π-π间距并减少电子-声子散射,从而提高电荷输运效率.我们观察到应变因子和材料厚度之间存在直接相关性,较薄的晶体具有较高的应变因子.使用分子级薄的二维分子晶体,我们观察到迁移率显著提高了58%.我们的研究结果为提高有机半导体的迁移率开辟了新的途径.

关键词： 2D molecular crystal organic field-effect transistor mobility strain engineering

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Roadmap for rechargeable batteries:present and beyond

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Science China Chemistry 2024年第1期67卷 13-42页

作者： Sen Xin Xu Zhang Lin Wang Haijun Yu Xin Chang Yu-Ming Zhao Qinghai Meng Pan Xu Chen-Zi Zhao Jiahang Chen Huichao Lu Xirui Kong Jiulin Wang Kai Chen Gang Huang Xinbo Zhang Yu Su Yao Xiao Shu-Lei Chou Shilin Zhang Zaiping Guo Aobing Du Guanglei Cui Gaojing Yang Qing Zhao Liubing Dong Dong Zhou Feiyu Kang Hu Hong Chunyi Zhi Zhizhang Yuan Xianfeng Li Yifei Mo Yizhou Zhu Dongfang Yu Xincheng Lei Jianxiong Zhao Jiayi Wang Dong Su Yu-Guo Guo Qiang Zhang Jun Chen Li-Jun Wan CAS Key laboratory of Molecular Nanostructure and Nanotechnology CAS Research/Education Center for Excellence in Molecular SciencesBeijing National Laboratory for Molecular Sciences(BNLMS)Institute of ChemistryChinese Academy of Sciences(CAS)Beijing 100190China University of Chinese Academy of Sciences.Beijing 100049 China Institute of Advanced Battery Materials and Devices Faculty of Materials and ManufacturingBeijing University of TechnologyBeijing 100124China Key laboratory of Advanced Functional Materials Ministry of EducationBeijing University of TechnologyBeijing 100124China Beijing Key laboratory of Green Chemical Reaction Engineering and Technology Department of Chemical EngineeringTsinghua UniversityBeijing 100084China State Key laboratory of Chemistry and Utilization of carbon-based Energy Resources College of ChemistryXinjiang UniversityUrumqi 830046China Department of Chemical Engineering Shanghai Jiao Tong UniversityShanghai 200240China State Key laboratory of Rare Earth Resource Utilization Changchun Institute of Applied ChemistryChangchun 130022China Institute for carbon Neutralization College of Chemistry and Materials EngineeringWenzhou UniversityWenzhou 325035China School of Chemical Engineering and Advanced Materials The University of AdelaideAdelaide 5000Australia Qingdao Industrial Energy Storage Research Institute Qingdao Institute of Bioenergy and Bioprocess TechnologyChinese Academy of SciencesQingdao 266101China Frontiers Science Center for New Organic Matter Key Laboratory of Advanced Energy Materials Chemistry(Ministry of Education)College of ChemistryNankai UniversityTianjin 300071China College of Chemistry and Materials Science Jinan UniversityGuangzhou 511443China Tsinghua Shenzhen International Graduate School Tsinghua UniversityShenzhen 518055China Department of Materials Science and Engineering City University of Hong KongHong Kong 999077China Division of Energy Storage Dalian National Laboratory for Clean Energy(DNL)Dalian Institute of Chem

Rechargeable batteries currently hold the largest share of the electrochemical energy storage market,and they play a major role in the sustainable energy transition and industrial decarbonization to respond to global climate change.Due to the increased popularity of consumer electronics and electric vehicles,lithium-ion batteries have quickly become the most successful rechargeable batteries in the past three decades,yet growing demands in diversified application scenarios call for new types of rechargeable batteries.Tremendous efforts are made to developing the next-generation post-Li-ion rechargeable batteries,which include,but are not limited to solid-state batteries,lithium–sulfur batteries,sodium-/potassium-ion batteries,organic batteries,magnesium-/zinc-ion batteries,aqueous batteries and flow batteries.Despite the great achievements,challenges persist in precise understandings about the electrochemical reaction and charge transfer process,and optimal design of key materials and interfaces in a battery.This roadmap tends to provide an overview about the current research progress,key challenges and future prospects of various types of rechargeable batteries.New computational methods for materials development,and characterization techniques will also be discussed as they play an important role in battery research.

关键词： energy storage rechargeable batteries battery materials electrochemistry

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Charge trap-based carbon nanotube transistor for synaptic function mimicking

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Nano Research 2021年第11期14卷 4258-4263页

作者： Jie Zhao Fang Liu Qi Huang Tongkang Lu Meiqi Xi Lianmao Peng Xuelei Liang Center for carbon-based electronics Peking UniversityBeijing100871China Key laboratory for the Physics and Chemistry of Nanodevices Department of ElectronicsPeking UniversityBeijing100871China Shanxi Institute for carbon-based thin film electronics Peking University(SICTFE-PKU)Taiyuan030012China taiyuan laboratory for carbon-based thin film electronics Taiyuan030012China

Brain-inspired neuromorphic computing is expected for breaking through the bottleneck of the computer of conventional von Neumann architecture. To this end, the first step is to mimic functions of biological neurons and synapses by electronic devices. In this paper, synaptic transistors were fabricated by using carbon nanotube (CNT) thin films and interface charge trapping effects were confirmed to dominate the weight update of the synaptic transistors. Large synaptic weight update was realized due to the high sensitivity of the CNTs to the trapped charges in vicinity. Basic synaptic functions including inhibitory post-synaptic current (IPSC), excitatory post-synaptic current (EPSC), spike-timing-dependent plasticity (STDP), and paired-pulse facilitation (PPF) were mimicked. Large dynamic range of STDP (> 2,180) and low power consumption per spike (∼ 0.7 pJ) were achieved. By taking advantage of the long retention time of the trapped charges and uniform device-to-device performance, long-term image memory behavior of neural network was successfully imitated in a CNT synaptic transistor array.

关键词： carbon nanotube charge trap synaptic transistor long-term memory

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High-yield and low-cost separation of high-purity semiconducting single-walled carbon nanotubes with closed-loop recycling of raw materials and solvents

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Nano Research 2021年第11期14卷 4281-4287页

作者： Fang Liu Xingxing Chen Haoming Liu Jie Zhao Meiqi Xi Hongshan Xiao Tongkang Lu Yu Cao Yan Li Lianmao Peng Xuelei Liang Center for carbon-based electronics Peking UniversityBeijing100871China Key laboratory for the Physics and Chemistry of Nanodevices Department of ElectronicsPeking UniversityBeijing100871China College of Chemistry and Molecular Engineering Peking UniversityBeijing100871China Shanxi Institute for carbon-based thin film electronics Peking University(SICTFE-PKU)Taiyuan030012China taiyuan laboratory for carbon-based thin film electronics Taiyuan030012China

Semiconducting single-walled carbon nanotubes (s-SWCNTs) are the foundation of CNT-based electronics and optoelectronics. For practical applications, s-SWCNTs should be produced with high purity, high structural quality, low cost, and high yield. Currently conjugated polymer wrapping method shows great potential to fulfill these requirements due to its advantages of simple operation process, high purity separation, and easy scaling-up. However, only a small portion of both CNTs and polymers go into the final solution, and most of them are discarded after a single use, resulting in high cost and low yield. In this paper, we introduce a closed-loop recycling strategy, in which raw materials (CNTs and polymers) and solvents were all recycled and reused for multiple separation cycles. In each cycle, high-purity (> 99.9%) s-SWCNTs were obtained with no significant change of structural quality. After 7 times of recycling and separation, the material cost was reduced to ∼ 1% in comparison with commercially available products, and total yield was increased to 36% in comparison with 2%–5% for single cycle separation. Our proposed closed-loop recycling strategy paves the way for low-cost and high-yield mass production of high-quality s-SWCNTs.

关键词： carbon nanotubes closed-loop recycling high-yield low-cost high purity

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Selective growth of semiconducting single-walled carbon nanotubes solely from carbon monoxide

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Nano Research 2023年第11期16卷 12720-12726页

作者： Xue Zhao Ningfei Gao Zeyao Zhang Qidong Liu Jian Sheng Yijie Hu Ruoming Li Haitao Xu Lianmao Peng Yan Li Beijing National laboratory for Molecular Sciences Key Laboratory for the Physics and Chemistry of NanodevicesState Key Laboratory of Rare Earth Materials Chemistry and ApplicationsCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing 100871China Beijing HuaTanYuanXin electronics Technology Ltd.Co. Beijing 101399China Institute of carbon-based thin film electronics Peking UniversityShanxiTaiyuan 030012China Institute of Advanced Functional Materials and Devices Shanxi UniversityTaiyuan 030031China PKU-HKUST ShenZhen-HongKong Institution Shenzhen 518057China

The selective growth of semiconducting single-walled carbon nanotubes(s-SWCNTs)is of great importance in many high-end applications represented by nanoelectronics.Here,we developed a general approach to grow horizontally aligned s-SWCNT arrays on stable temperature(ST)-cut quartz with bimetallic catalysts using carbon monoxide(CO)as both catalyst reductant and single component carbon feedstock under atmospheric pressure.The disproportionation of CO produces not only carbon species for SWCNT growth but also CO_(2),which could act as an in-situ etchant to remove both amorphous carbon and metallic tubes.The employment of bimetallic catalyst and quartz substrate facilitates the selective etching by narrowing the diameter distribution of as-grown SWCNT arrays.At the optimized conditions,we realized the selective growth of horizontally aligned s-SWCNT arrays with the content above 97%using CoCu catalysts,confirmed by Raman characterization and electrical measurements of the fabricated field effect transistor devices.This CO-based process in selective growth of s-SWCNTs has demonstrated its feasibility and universality by the broad growth window and applicability for other bimetallic catalysts,such as FeCu and CoMn.It possesses a practical potential in obtaining semiconducting channel materials for the scalable fabrication of CNT-based devices.

关键词： carbon monoxide semiconducting single-walled carbon nanotubes arrays bimetallic catalysts

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Stretchable,Transparent,and Ultra-Broadband Terahertz Shielding thin films based on Wrinkled MXene Architectures

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Nano-Micro Letters 2024年第9期16卷 110-122页

作者： Shaodian Yang Zhiqiang Lin Ximiao Wang Junhua Huang Rongliang Yang Zibo Chen Yi Jia Zhiping Zeng Zhaolong Cao Hongjia Zhu Yougen Hu Enen Li Huanjun Chen Tianwu Wang Shaozhi Deng Xuchun Gui State Key laboratory of Optoelectronic Materials and Technologies School of Electronics and Information TechnologySun Yat-Sen UniversityGuangzhou 510275People’s Republic of China National Key laboratory of Materials for Integrated Circuits Shenzhen Institute of Advanced Electronic MaterialsShenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhen 518055People’s Republic of China Guangdong Province Key laboratory of Display Material and Technology Guangzhou 510275People’s Republic of China China Academy of Aerospace Science and Innovation Beijing 100176People’s Republic of China School of Materials Science and Engineering Sun Yat-Sen UniversityGuangzhou 510275People’s Republic of China GBA Branch of Aerospace Information Research Institute Chinese Academy of SciencesGuangzhou 510700People’s Republic of China School of Electronic Electrical and Communication EngineeringUniversity of Chinese Academy of SciencesBeijing 100049People’s Republic of China Guangdong Provincial Key laboratory of Terahertz Quantum Electromagnetics Guangzhou 510700People’s Republic of China

With the increasing demand for terahertz(THz)technology in security inspection,medical imaging,and flexible electronics,there is a significant need for stretchable and transparent THz electromagnetic interference(EMI)shielding materials.Existing EMI shielding materials,like opaque metals and carbon-based films,face challenges in achieving both high transparency and high shielding efficiency(SE).Here,a wrinkled structure strategy was proposed to construct ultra-thin,stretchable,and transparent terahertz shielding MXene films,which possesses both isotropous wrinkles(height about 50 nm)and periodic wrinkles(height about 500 nm).Compared to flat film,the wrinkled MXene film(8 nm)demonstrates a remarkable 36.5%increase in SE within the THz band.The wrinkled MXene film exhibits an EMI SE of 21.1 dB at the thickness of 100 nm,and an average EMI SE/t of 700 dBμm^(−1)over the 0.1-10 THz.Theoretical calculations suggest that the wrinkled structure enhances the film’s conductivity and surface plasmon resonances,resulting in an improved THz wave absorption.Additionally,the wrinkled structure enhances the MXene films’stretchability and stability.After bending and stretching(at 30%strain)cycles,the average THz transmittance of the wrinkled film is only 0.5%and 2.4%,respectively.The outstanding performances of the wrinkled MXene film make it a promising THz electromagnetic shielding materials for future smart windows and wearable electronics.

关键词： Terahertz Wrinkle structure Electromagnetic interference shielding MXene

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