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Non-degenerate Invariant Bilinear Forms on leibniz Algebras

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Algebra Colloquium 2015年第4期22卷 711-720页

作者： Song Wang Linsheng Zhu Department of Mathematics Tngji University Shanghai 200092 China College of Information Technology Shanghai Ocean University Shanghai 201306 China Department of Mathematics Changshu Institute of Technology Changshu Jiangsu 215500 China

In this paper, we study leibniz algebras with a non-degenerate leibniz- symmetric fl-invariant bilinear form B, such a pair （g, B） is called a quadratic leibniz algebra. Our first result generalizes the notion of double extensions to quadratic leibniz algebras. This notion was introduced by Medina and Revoy to study quadratic Lie alge- bras. In the second theorem, we give a sufficient condition for a quadratic leibniz algebra to be a quadratic leibniz algebra by double extension.

关键词： quadratic leibniz algebra double extension

（Co）Homology and Universal Central Extension of Hom-leibniz Algebras

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Acta Mathematica Sinica,English Series 2011年第5期27卷 813-830页

作者： Yong Sheng CHENG Institute of Contemporary Mathematics & College of Mathematics and information science He'nan University Kaifeng 475004 P. R. China Wu Wen- Tsun Key Laboratory of Mathematics University of Science and Technology of China Hefei 230026 P. R. China Department of Mathematics Tongji University Shanghai 200092 P. R. China

Hom-leibniz algebra is a natural generalization of leibniz algebras and Hom-Lie algebras. In this paper, we develop some structure theory （such as （co）homology groups, universal central extensions） of Hom-leibniz ... 详细信息

关键词： Hom-leibniz algebra (co)homology theory central extension

Redox Memristors with Volatile Threshold Switching Behavior for Neuromorphic Computing

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Journal of Electronic science and technology 2022年第4期20卷 356-374页

作者： Yu-Hao Wang Tian-Cheng Gong Ya-Xin Ding Yang Li Wei Wang Zi-Ang Chen Nan Du Erika Covi Matteo Farronato Dniele Ielmini Xu-Meng Zhang Qing Luo Key Laboratory of Microelectronic Devices and Integrated technology Institute of Microelectronics of the Chinese Academy of SciencesBeijing 100029 University of Chinese Academy of sciences Beijing 100049 Peng Cheng Laboratory Shenzhen 518055 Institute for Solid State Physics University of JenaJena 07743 Department of Quantum Detection Leibniz Institute of Photonic TechnologyJena 07743 Nanoelectronic Materials Laboratory Dresden 01187 Department of Electronics Information and BioengineeringPolitecnico di MilanoMilan 20133 Frontier Institute of Chip and System Fudan UniversityShanghai 200433

The spiking neural network(SNN),closely inspired by the human brain,is one of the most powerful platforms to enable highly efficient,low cost,and robust neuromorphic computations in hardware using traditional or emerging electron devices within an integrated *** the hardware implementation,the building of artificial spiking neurons is fundamental for constructing the whole ***,with the slowing down of Moore’s Law,the traditional complementary metal-oxide-semiconductor(CMOS)technology is gradually fading and is unable to meet the growing needs of neuromorphic ***,the existing artificial neuron circuits are complex owing to the limited bio-plausibility of CMOS *** with volatile threshold switching(TS)behaviors and rich dynamics are promising candidates to emulate the biological spiking neurons beyond the CMOS technology and build high-efficient neuromorphic ***,the state-of-the-art about the fundamental knowledge of SNNs is ***,we review the implementation of TS memristor-based neurons and their systems,and point out the challenges that should be further considered from devices to circuits in the system *** hope that this review could provide clues and be helpful for the future development of neuromorphic computing with memristors.

关键词： Memristors neuromorphic computing threshold switching

Genesis and soil environmental implications of intact in-situ rhizoliths in dunes of the Badain Jaran Desert,northwestern China

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Acta Geochimica 2022年第5期41卷 811-822页

作者： Qingfeng Sun Kazem Zamanian Arnaud Huguet Omid Bayat Hong Wang Hanan SBadawy Key Laboratory of Resource Environment and Sustainable Development of Oasis Northwest Normal University730070 LanzhouGansu ProvinceGansuPR China Key Laboratory of Eco-function Polymer Materials of the Ministry of Education Northwest Normal University730070 LanzhouGansuPR China Institute of Soil science Leibniz University of HannoverHerrenhäuser Straße 230419 HannoverGermany Sorbonne Université CNRSEPHEUMR METISF-75005 ParisPSLFrance Department of Soil science Isfahan University of Technology84156-83111 IsfahanIran Interdisciplinary Research Center of Earth science Frontier Beijing Normal University100875 BeijingPR China Department of Geology Faculty of ScienceBeni-Suef University62521 Beni-SuefEgypt School of Geographical sciences Nanjing University of Information Science and Technolog210044NanjingChina

Desert rhizoliths are generally found as weathered,broken and scattered samples on dune field surface,but rarely insitu in their initial states buried under the soil of desert in the Badain Jaran Desert,northwest *** study off ers an assessment of the morphological,mineralogical,and chemical properties of intact and in-situ rhizoliths found in soils of swales and depressions among dune *** characteristics of these rare and precious objects were assessed using optical polarizing microscopy,cathodoluminescence,scanning electronic microscopy,radiocarbon dating,and stable isotopic analyses,providing the opportunity for discussion of the rhizolith formation mechanisms and associated environmental *** and laboratory investigations showed that the in-situ intact rhizoliths were formed only in the places where Artemisia shrubs are living,and the remaining root relicts within rhizoliths belong to this *** spatial distribution of rhizoliths also suggested that low topographic positions on a landscape provided soil moisture,and redox environments favored rhizolith formation.A semi-closed redox environment in the subsoil at swales and depressions,where water is always present,along with the sandy soil texture,facilitated fast water percolation to deeper depths and *** a soil environment not only provides water for Artemisia growth,but also for the weathering of minerals such as felspars and calcite from primary carbonates,and for the decomposition of root ***,harsh climatic conditions,such as strong winds and solar radiation,led to water evaporation through dead root channels and triggered the calcification along the root *** entrapped lithogenic carbonates and to a lesser extent the decomposition of Artemisia roots provided the carbon sources for the rhizoliths formation,while the weathering of soil minerals,particularly feldspars and carbonates,was the main source of *** in the Badain Jaran des

关键词： Rhizoliths Calcification Leptic regosols Artemisia roots Decomposition Soil moisture

Low-power emerging memristive designs towards secure hardware systems for applications in internet of things

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Nano Materials science 2021年第2期3卷 186-204页

作者： Nan Du Heidemarie Schmidt Ilia Polian Department Nano Device technology Fraunhofer Institute for Electronic Nano SystemsTechnologie-Campus 309126ChemnitzGermany Faculty of Electrical Engineering and information technology Chemnitz University of Technology(TU Chemnitz)Straße der Nationen 6209126ChemnitzGermany Department of Quantum Detection Leibniz Institute of Photonic Technology(IPHT)Albert-Einstein-Str.907745JenaGermany Institute for Solid State Physics Friedrich Schiller University JenaFürstengraben 107743JenaGermany Institute of Computer Engineering and Computer Architecture(ITI) University of StuttgartPfaffenwaldring 4770569StuttgartGermany

Emerging memristive devices offer enormous advantages for applications such as non-volatile memories and inmemory computing(IMC),but there is a rising interest in using memristive technologies for security applications in the era of internet of things(IoT).In this review article,for achieving secure hardware systems in IoT,lowpower design techniques based on emerging memristive technology for hardware security primitives/systems are *** reviewing the state-of-the-art in three highlighted memristive application areas,*** non-volatile memory,memristive reconfigurable logic computing and memristive artificial intelligent computing,their application-level impacts on the novel implementations of secret key generation,crypto functions and machine learning attacks are explored,*** the low-power security applications in IoT,it is essential to understand how to best realize cryptographic circuitry using memristive circuitries,and to assess the implications of memristive crypto implementations on security and to develop novel computing paradigms that will enhance their *** review article aims to help researchers to explore security solutions,to analyze new possible threats and to develop corresponding protections for the secure hardware systems based on low-cost memristive circuit designs.

关键词： Memristive technology Nanoelectronic device Low-power consumption Miniaturization Nonvolatility Reconfigurability In memory computing Artificial intelligence Hardware security primitives Machine learning-related attacks and defenses

Influence of Single Use and Combination of Reductants on the Size, Morphology and Growth Steps of Gold Nanoparticles in Colloidal Mixture

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Open Journal of Physical Chemistry 2012年第4期2卷 252-261页

作者： Ahmad Alshammari Angela Kockritz Venkata Narayana Kalevaru Abdulaziz Bagabas Andreas Martin National Nanotechnology Research Center King Abdulaziz City for Science and TechnologyRiyadhSaudi Arabia leibniz-Institute for Catalysis at University of Rostock RostockGermany

A comprehensive investigation on the formation mechanism of gold nanoparticles (AuNPs) in colloidal mixture obtained from the reduction of chloroauric acid (HAuCl4) solution using a single reducing agent (sodium citrate;process-I), (tannic acid;process-II), and a combination of two reducing agents (sodium citrate plus tannic acid;process-III) is reported. The growth steps at different time intervals during synthesis of colloidal AuNPs were monitored in situ and ex situ using various methods for all the three processes. The measurement of changes in the surface plasmon band position of colloidal AuNPs, along with dynamic light scattering results gave important information for the first assessing of particle size, shape and distribution. Besides, the size and morphological changes at different stages during different processes were also analyzed by transmission electron microscopy. The final Au particles of processes-I & II exhibited different shapes (spherical and nanowires) with particle size and nano wire diameter of 12 nm and 17 nm, respectively. Nevertheless, combination of two reductants (process-III) surprisingly leads to drastically reduced size (ca. 3 nm) with spherical morphology compared to their parent solutions with either of single reducing agent. This result clearly indicates that the combination of reductants has a significant influence on the particle size, morphology and formation mechanism.

关键词： Colloidal Gold Nanoparticles Reducing Agents Size Distribution Morphology

Neuroplastin in Ca^(2+)signal regulation and plasticity of glutamatergic synapses

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Neural Regeneration Research 2023年第8期18卷 1705-1706页

作者： Ayse Malci Xiao Lin Yun Stone Shi Rodrigo Herrera-Molina Center for Neuroscience Research Children’s National Medical CenterWashingtonDCUSA Guangdong Institute of Intelligence science and technology ZhuhaiGuangdong ProvinceChina Combinatorial Combinatorial NeuroImaging Leibniz Institute for NeurobiologyMagdeburgGermany Centro Integrativo de Biología y Química Aplicada Universidad Bernardo O’HigginsSantiagoChile

The main function of neurons is information transmission in the form of action *** fulfill this duty,neurons are connected functionally with each other via synapses,the microscopic structures where specialized molecular machinery is strategically placed to release and receive neurotransmitters and to generate and extinguish calcium(Ca^(2+))*** synaptic molecular components are highly dynamic and they influence each other to confer structural and functional adaptability(plasticity)to neuronal communication(Biederer et al.,2017).

关键词： plasticity specialized structural

14.1 W continuous-wave dual-end diode-pumped Er:Lu_(2)O_(3)laser at 2.85μm

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Chinese Optics Letters 2024年第1期22卷 84-89页

作者：梁洋洋李涛张百涛何京良 Sascha Kalusniak 赵显 Christian Kränkel Key Laboratory of Laser&Infrared System Ministry of EducationShandong UniversityQingdao 266237China School of information science and Engineering Shandong Provincial Key Laboratory of Laser Technology and ApplicationShandong UniversityQingdao 266237China Institute of Novel Semiconductors State Key Laboratory of Crystal MaterialsShandong UniversityJinan 250100China leibniz-Institut für Kristallzüchtung(IKZ) Berlin 12489Germany

We present our efforts towards power scaling of Er:Lu_(2)O_(3)lasers at 2.85μ*** applying a dual-end diode-pumped resonator scheme,we achieve an output power of 14.1 W at an absorbed pump power of 59.7 W with a slope efficiency of 26%.In a single-end pumped resonator scheme,an output power of 10.1 W is reached under 41.9 W of absorbed pump *** the best of our knowledge,this is the first single crystalline mid-infrared rare-earth-based solid-state laser with an output power exceeding 10 W at room temperature.

关键词： high-power continuous-wave laser mid-infrared laser dual-end pump scheme

Modulating p-type doping of two-dimensional material palladium diselenide

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Nano Research 2024年第4期17卷 3232-3244页

作者： Jiali Yang Yu Liu En-Yang Wang Jinbo Pang Shirong Huang Thomas Gemming Jinshun Bi Alicja Bachmatiuk Hao Jia Shu-Xian Hu Chongyun Jiang Hong Liu Gianaurelio Cuniberti Weijia Zhou Mark H Rümmeli Institute for Advanced Interdisciplinary Research(iAIR) University of JinanJinan 250022China Institute for Materials Chemistry Leibniz Institute for Solid State and Materials Research Dresden(IFW Dresden)20 Helmholtz StrasseDresden 01069Germany State Key Lab of Transducer technology Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China College of Energy Soochow Institute for Energy and Materials Innovations Soochow UniversitySuzhou 215006China Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province Soochow UniversitySuzhou 215006China School of Integrated Circuits University of Chinese Academy of SciencesBeijing 101408China Institute of Microelectronics of Tianjin Binhai New Area Tianjin 300451China Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China Lukasiewicz Research Network PORT Polish Center for Technology DevelopmentStablowicka 147Wroclaw 54-066Poland School of Mathematics and Physics University of Science and Technology BeijingBeijing 100083China College of electronic information and optical engineering Nankai UniversityTianjin 300350China centre of Polymer and Carbon Materials Polish Academy of SciencesM.Curie Sklodowskiej 34Zabrze 41-819Poland Center for Energy and Environmental Technologies VŠB-Technical University of Ostrava17.Listopadu 15Ostrava 70833Czech Republic State Key Laboratory of Crystal Materials Center of Bio&Micro/Nano Functional MaterialsShandong UniversityJinan 250100China Dresden Center for Computational Materials science Technische Universität DresdenDresden 01062Germany Dresden Center for Intelligent Materials(GCL DCIM) Technische Universität DresdenDresden 01062Germany Institute for Materials science and Max Bergmann Center of Biomaterials Technische Universität DresdenDresden 01069Germany Center for Advancing Electronics Dresden Technische Universität DresdenDresden 01069Germany

The van der Waals heterostructures have evolved as novel materials for complementing the Si-based semiconductor ***-10 noble metal dichalcogenides(e.g.,PtS_(2),PtSe_(2),PdS_(2),and PdSe_(2))have been listed into two-dimensional(2D)materials toolkit to assemble van der Waals *** them,PdSe_(2) demonstrates advantages of high stability in air,high mobility,and wide tunable ***,the regulation of p-type doping of PdSe_(2) remains unsolved problem prior to fabricating p–n junction as a fundamental platform of semiconductor ***,a quantitative method for the controllable doping of PdSe_(2) is yet to be *** this study,the doping level of PdSe_(2) was correlated with the concentration of Lewis acids,for example,SnCl_(4),used for *** the transfer characteristics,the threshold voltage(the gate voltage corresponding to the minimum drain current)increased after SnCl_(4) soaking ***_(2) transistors were soaked in SnCl_(4) solutions with five different *** threshold voltages from the as-obtained transfer curves were extracted for linear fitting to the threshold voltage versus doping concentration correlation *** study provides in-depth insights into the controllable p-type doping of PdSe_(2).It may also push forward the research of the regulation of conductivity behaviors of 2D materials.

关键词： two-dimensional(2D)materials Lewis acid treatment p-type doping field-effect transistors transfer characteristic