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Dielectric-ion-conductive ZnNb2O6 layer enabling rapid desolvation and diffusion for dendrite-free Zn metal batteries

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Journal of Energy Chemistry 2025年第1期100卷 693-701页

作者： Haifeng Yang Jian Wang Panpan Zhang Xiaomin Cheng Qinghua Guan Jing Dong Bixian Chen Lujie Jia Jing Zhang Yongzheng Zhang Yunjian Liu Hongzhen Lin School of Materials Science and Engineering Jiangsu University i-Lab & CAS Key Laboratory of nanophotonic Materials and Devices Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences Helmholtz institute Ulm (HIU) Karlsruhe institute of technology (KIT) School of Materials Science and Engineering Xi'an University of Technology State Key Laboratory of Chemical Engineering East China University of Science and Technology

Rechargeable aqueous zinc-metal batteries （AZMBs） are promising candidates for large-scale energy storage systems due to their low cost and high ***,their performance and sustainability are significantly hindered by the sluggish desolvation kinetics at the electrode/electrolyte interface and the corresponding hydrogen evolution reaction where active water molecules tightly participate in the Zn（H2O）62+solvation ***,learnt from self-generated solid electrolyte interphase （SEI） in anodes,the dielectric but ion-conductive zinc niobate nanoparticles artificial layer is constructed on metallic Zn surface （ZNB@Zn）,acting as a rapid desolvation *** zincophilic and dielectric-conductive properties of ZNB layer accelerate interfacial desolvation/diffusion and suppress surface corrosion or dendrite formation,achieving uniform Zn plating/stripping behavior,as confirmed by electronic/optical microscopies and interface spectroscopical measurements together with theoretical ***,the as-prepared ZNB@Zn electrode exhibits excellent cycling stability of over 2000 h and robust reversibility （99.54%） even under high current density and depth of discharge ***,the assembled ZNB@Zn-based full cell displays high capacity-retention rate of 80.21%after 3000 cycles at 5 A g-1and outstanding rate performance up to 10 A *** large-areal pouch cell is stabilized for hundreds of cycles,highlighting the bright prospects of the dielectric but ion-conductive layer in further application of AZMBs.

关键词： Zn metal battery Dielectric artificial layer Rapid ion diffusion Zincophilic diffusion Active water inhibition

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Improving InGaN-LED performance by optimizing the patterned sapphire substrate shape

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Chinese Physics B 2012年第3期21卷 365-370页

作者：黄小辉刘建平范亚明孔俊杰杨辉王怀兵 suzhou institute of nano-tech and nano-bionics Chinese Academy of Sciences

The epitaxial growths of GaN films and GaN-based LEDs on various patterned sapphire substrates （PSSes） with different values of fill factor （f） and slanted angle （0） are investigated in detail. The threading dislocation （TD） density is lower in the film grown on the PSS with a smaller fill factor, resulting in a higher internal quantum efficiency （IQE）. Also the ability of the LED to withstand the electrostatic discharge （ESD） increases as the fill factor decreases. The illumination output power of the LED is affected by both 0 and f. It is found that the illumination output power of the LED grown on the PSS with a lower production of tan 0 and f is higher than that with a higher production of tan 0 and f.

关键词： GaN Patterned sapphire substrate light emitting diode

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Optoelectronic platform and technology

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Frontiers of Information technology & Electronic Engineering 2019年第4期20卷 439-457页

作者： Wen-hua SHI Wei-ming LV Tian-yu SUN Bao-shun ZHANG suzhou institute of nano-tech and nano-bionics Chinese Academy of Sciences

Optoelectronic technology is a new technology formed by the combination of photon technology and electronic technology. Photon technology can cause an industrial revolution that supersedes electronic technology, because it will have a deeper impact on industry and society. We review the development of optoelectronic devices and integration technologies. We compare and analyze the development and characteristics of optoelectronic technology platforms, summarize the key manufacturing technologies, introduce several representative optoelectronic devices including flexible devices, and focus on the key breakthrough technologies that need to be achieved. Through a comprehensive review of the development of optoelectronic technology, China should seize the opportunity for a transformation of the optoelectronic technology industry. By drawing on the experiences with advanced optoelectronic platforms and technologies in foreign countries, we should speed up the accumulation and reserves of Chinese industrial talents, pay attention to the accumulation of basic technology, and establish a national optoelectronic technology platform, to greatly enhance domestic levels in these regards and to achieve independent innovations with these devices.

关键词： Optoelectronic technology Optoelectronic platform Process technology Development and challenges

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Porous AlN films grown on C-face SiC by hydride vapor phase epitaxy

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Chinese Physics B 2022年第7期31卷 477-480页

作者： Jiafan Chen Jun Huang Didi Li Ke Xu suzhou institute of nano-tech and nano-bionics Chinese Academy of SciencesSuzhou 215123China

We report the growth of porous AlN films on C-face SiC substrates by hydride vapor phase epitaxy(HⅤPE).The influences of growth condition on surface morphology,residual strain and crystalline quality of Al N films have been *** the increase of theⅤ/Ⅲratio,the growth mode of Al N grown on C-face 6H-SiC substrates changes from step-flow to pit-hole *** force microscopy(AFM),scanning electron microscopy(SEM)and Raman analysis show that cracks appear due to tensile stress in the films with the lowestⅤ/Ⅲratio and the highestⅤ/Ⅲratio with a thickness of about 3μ*** contrast,under the mediumⅤ/Ⅲratio growth condition,the porous film can be *** when the thickness of the porous Al N film is further increased to 8μm,the film remains porous and crack-free,and the crystal quality is improved.

关键词： hydride vapor phase epitaxy(HVPE) porous AlN

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Mid-Infrared InAs/GaSb Superlattice Planar Photodiodes Fabricated by Metal–Organic Chemical Vapor Deposition

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Chinese Physics Letters 2020年第6期37卷 115-118页

作者： Yu Zhao Yan Teng Jing-Jun Miao Qi-Hua Wu Jing-Jing Gao Xin Li Xiu-Jun Hao Ying-Chun Zhao Xu Dong Min Xiong Yong Huang Key Lab of nanodevices and Applications Suzhou Institute of Nano-tech and Nano-bionicsChinese Academy of SciencesSuzhou 215123China nano-fabrication Facility Suzhou Institute of Nano-tech and Nano-bionicsChinese Academy of SciencesSuzhou 215123China

Mid-wavelength infrared planar photodiodes were demonstrated,in which both the epitaxy growth of InAs/GaSb superlattices and the thermal diffusion of p-type dopant were performed in production-scale metal-organic chemical vapor deposition *** formation of a planar homojunction was confirmed by secondary ion mass spectroscopy and itsⅠ-Ⅴcharacteristics.A cut-off wavelength around 5μm was determined in 77 K optical characterization,and photo-current as high as 600 nA was collected from a reverse-biased planar diode of 640μm *** preliminary results were obtained despite the structural degradation revealed by x-ray diffraction,and we attribute the degradation to the concert of thermal annealing and high Zn concentration behind the diffusion front.

关键词： InAs/GaSb dopant planar

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Flexible electronic eardrum

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nano Research 2017年第8期10卷 2683-2691页

作者： Yang Gu Xuewen Wang Wen Gu Yongjin Wu Tie Li Ting Zhang suzhou institute of nano-tech and nano-bionics 398 Ruoshui Road i-Lab Suzhou 125123 China

Flexible mechanosensors with a high sensitivity and fast response speed may advance the wearable and implantable applications of healthcare devices, such as real-time heart rate, pulse, and respiration monitoring. In this paper, we introduce a novel flexible electronic eardrum （EE） based on single-walled carbon nanotubes, polyethylene, and polydimethylsiloxane with micro-structured pyramid arrays. The EE device shows a high sensitivity, high signal-to-noise ratio （approximately 55 dB）, and fast response time （76.9 μs） in detecting and recording sound within a frequency domain of 20-13,000 Hz. The mechanism for sound detection is investigated and the sensitivity is determined using the micro-structure, thickness, and strain state. We also demonstrated that the device is able to distinguish human voices. This unprecedented performance of the flexible electronic eardrum has implications for many applications such as implantable acoustical bioelectronics and personal voice recognition.

关键词： electronic eardrum (EE) pressure sensor carbon nanotube voice recognition

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Harmonic balance simulation of the influence of component uniformity and reliability on the performance of a Josephson traveling wave parametric amplifier

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Chinese Physics B 2024年第4期33卷 339-343页

作者：郑煜臻熊康林冯加贵杨辉 School of nano-tech and nano-bionics University of Science and Technology of ChinaHefei 230026China suzhou institute of nano-tech and nano-bionics Chinese Academy of SciencesSuzhou 215123China

A Josephson traveling wave parametric amplifier(JTWPA),which is a quantum-limited amplifier with high gain and large bandwidth,is the core device of large-scale measurement and control systems for quantum computing.A typical JTWPA consists of thousands of Josephson junctions connected in series to form a transmission line and hundreds of shunt LC resonators periodically loaded along the line for phase *** the variation of these capacitors and inductors can be detrimental to their high-frequency characteristics,the fabrication of a JTWPA typically necessitates precise processing *** guide the fabrication process and further improve the design for manufacturability,it is necessary to understand how each electronic component affects the *** this paper,we use the harmonic balance method to conduct a comprehensive study on the impact of nonuniformity and fabrication yield of the electronic components on the performance of a *** results provide insightful and scientific guidance for device design and fabrication processes.

关键词： Josephson traveling wave parametric amplifier(JTWPA) harmonic balance method yields uniformity

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Leakage of photocurrent: an alternative view on I–V curves of solar cells

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Journal of Semiconductors 2015年第6期36卷 6-10页

作者：周桃飞熊康林张敏刘磊田飞飞张志强顾泓黄俊王建峰董建荣徐科 suzhou institute of nano-tech and nano-bionics Chinese Academy of Sciences

An altemative way is proposed to interpret I-V characteristics of GalnP single-junction solar cells by position-dependent leakage ofphotocurrent. With this approach, the I-V curves of solar cells under non-uniform illumination are well analyzed. The effective spreading resistance is also extracted to understand the dynamic behavior of between the open-circuit voltage and short-circuit current points. The conditions under which the one- diode model will fail are addressed in detail. These analyses are also applicable for a characterization of the I-V curves with lateral voltage distribution under uniform illumination.

关键词： GalnP single-junction solar cells I-V characteristics open-circuit voltage

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1.82 wt.% Pt/N, P co-doped carbon overwhelms 20 wt.% Pt/C as a high-efficiency electrocatalyst for hydrogen evolution reaction

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nano Research 2017年第1期10卷 238-246页

作者： Changhong Wang Feng Hu Hongchao Yang Yejun Zhang Huan Lu Qiangbin Wang Key Laboratory of nano-Bio Interface Division of Nanobiomedicine and i-Lab Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences Suzhou 215123 China School of nano-tech and nano-bionics University of Science and Technology of China Suzhou 215123 China

Cost-effective electrocatalysts for the hydrogen evolution reaction （HER） play a key role in the field of renewable energy. Although tremendous efforts have been devoted to the search of alternative materials, Pt/C is still the most efficient electrocatalyst for the HER. Nevertheless, decreasing the loading of Pt in the designed eletrocatalysts is of significance. However, with low Pt loading, it is challenging to maintain excellent catalytic performance. Herein, a new catalyst （Pt/NPC） was prepared by dispersing Pt nanoparticles （PtNPs） with an average diameter of 1.8 nm over a three-dimensional （3D） carbon network co-doped with N and P. Because of the high electronegativity of the N and P dopants, PtNPs were uniformly dispersed on the carbon network via high electronic affinity between Pt and carbon, affording a Pt/NPC catalyst; Pt/NPC exhibited superior HER activity, attributed to the down-shift of the Pt d-band caused by the donation of charge from N and P to Pt. The results show that Pt/NPC with an ultralow Pt loading of 1.82 wt.% exhibits excellent HER performance, which corresponds to a HER mass activity 20.6-fold greater than that observed for commercial 20% Pt/C at an overpotential of 20 mV vs. RHE.

关键词： electrocatalysis Pt N and P co-doped carbon hydrogen evolution reaction

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A snap-shot mode cryogenic readout circuit for QWIP IR FPAs

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Journal of Semiconductors 2010年第2期31卷 88-93页

作者：马文龙石寅张耀辉刘洪冰谢保健 institute of Semiconductors Chinese Academy of Sciences suzhou institute of nano-tech and nano-bionics Chinese Academy of Sciences

The design and measurement of a snap-shot mode cryogenic readout circuit（ROIC） for GaAs/AlGaAs QWIP FPAs was *** input circuits with pixei level built-in electronic injection transistors were proposed to test the chip before assembly with a detector *** optimization techniques for cryogenic and low power are *** experimental ROIC chip of a 128×128 array was fabricated in 0.35μm CMOS *** showed that the ROIC could operate at 77 K with low power dissipation of 35 *** chip has a pixel charge capacity of 2.57×10^6 electrons and transimpedance of 1.4×10^7Ω.Measurements showed that the transimpedance non-uniformity was less than 5%with a 10 MHz readout speed and a 3.3 V supply voltage.

关键词： QWIP ROIC CTIA cryogenic transimpedance non-uniformity

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