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HIGH EPITAXIAL FERROELECTRIC RELAXOR Mn-DOPED Ba(Zr,Ti)O_(3) THIN FILMS ON MgO SUBSTRATES

Journal of Advanced dielectrics 2011年第4期1卷 383-387页

作者： M.LIU J.LIU G.COLLINS C.R.MA C.L.CHEN A.D.ALEMAYEHU G.SUBRAMANYAM C.DAI Y.LIN J.HE J.C.JIANG E.I.MELETIS A.BHALLA Q.Y.ZHANG Department of Physics and Astronomy University of Texas at San Antonio San Antonio TX 78249USA Key Lab of materials Modification by Laser Ion Electron BeamsDalian University of Technology Dalian 116024P.R.China The Texas Center for Superconductivity University of Houston HoustonTX 77204USA Department of Electrical and Computer Engineering University of Dayton DaytonOhio 45469USA State Key laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu Sichuan 610054P.R.China Department of Material Science and Engineering University of Texas at Arlington Arlington TX 76019USA Department of Electrical and Computer Engineering University of Texas at San Antonio San Antonio TX 78249USA

Environment friendly ferroelectric relaxor Ba(Zr_(0.2)Ti_(0.8))O_(3)thin fims with the addition of 2%Mn dopant were grown on(001)MgO substrates by pulsed laser *** studies with X-ray di®raction and transmission electron microscopy reveal that the as-grown Ba(Zr_(0.2)Ti_(0.8))O_(3) thin films are c-axis oriented with an atomic sharp *** films have good single crystallinity and good epitaxial *** interface relationship was determined to be[100]***//[100]MgO and(001)***//(001)*** order/disorder relaxor structures were found with nano-columnar *** microwave dielectric measurements(15-18GHz)indicate that the¯lms have excellent dielectric properties with large dielectric constant value,high tunability,and low dielectric loss,promising the development of room temperature tunable microwave elements.

关键词： Ferroelectric relaxor thin films Ba(Zr_(0.2)Ti_(0.8))O_(3) dielectric microwave

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Influence of the aspect ratio of nitrogen-doped carbon nanotubes on their piezoelectric properties

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Journal of Advanced dielectrics 2022年第6期12卷 1-7页

作者： Marina V.Il’ina Olga I.Soboleva Nikolay N.Rudyk Maria R.Polyvianova Soslan A.Khubezhov Oleg I.Il’in Southern Federal University Institute of NanotechnologiesElectronics and Equipment Engineering Shevchenko St.2Taganrog347922Russia Southern Federal University Research Laboratory of Functional Nanomaterials Technology Shevchenko St.2Taganrog347922Russia

Recent studies have shown that nitrogen doping of carbon nanotubes(CNTs)can lead to the formation of piezoelectric properties in them,not characteristic of pure *** this work,nitrogen-doped CNTs were grown by plasma-enhanced chemical vapor deposition and the effect of the aspect ratio of the nanotube length to its diameter on its piezoelectric coefficient d33 was *** was observed that as the aspect ratio of the nanotube increased from 7 to 21,the value of d33 increased linearly from 7.3 to 10.7 pm/*** dependence is presumably due to an increase in curvature-induced polarization because of an increase in the curvature and the number of bamboo-like“bridges”in the nanotube cavity formed as a result of the incorporation of pyrrole-like nitrogen into the nanotube *** obtained results can be used in the development of promising elements of nanopiezotronics(nanogenerators,memory elements,and strain sensors).

关键词： Carbon nanotube nitrogen piezoelectric nanogenerator PFM

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