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Recent progress in stretchable organic field-effect transistors

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Science China(Technological Sciences) 2019年第8期62卷 1255-1276页

作者： LIU Kai GUO YunLong LIU YunQi Beijing National laboratory for Molecular Sciences Organic Solid Laboratory Institute of Chemistry Chinese Academy of Sciences Beijing 100190 China Department of Chemistry University of Chinese Academy of Sciences Beijing 100049 China

Stretchable organic field-effect transistors (STOFETs) employing organic semiconductors as active layers are highly attractive ongoing from health monitoring to biological research owing to some favorable advantages over their inorganic counterpart, including light weight, low cost, solution processing, high flexibility and simple adjustment of functionalities through molecular design. Although the development of STOFETs with original electrical performances under large mechanical deformation remain rudimentary, major efforts have recently been devoted to the investigation on STOFETs, and remarkable advances in stretchable components and novel fabrication methods have been achieved. A detailed overview of the advantages, challenges and current achievements in STOFETs was given including stretchable electrodes, semiconductors, dielectrics and substrates. Furthermore, conclusions and prospects for the future development of STOFETs with both high stretchability and superb electrical performances fabricated using intrinsically stretchable components are proposed.

关键词： STOFETs organic semiconductor high stretchability high carrier mobility

Influence of thermal conditions on the electrocaloric effect in a multilayer capacitor based on doped BaTiO_(3)

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Journal of Advanced dielectrics 2017年第6期7卷 48-56页

作者： V.S.Bondarev I.N.Flerov M.V.Gorev E.I.Pogoreltsev M.S.Molokeev E.A.Mikhaleva A.V.Shabanov A.V.Es’kov Kirensky Institute of Physics Federal Research Center KSC SB RASKrasnoyarsk 660036Russia Siberian Federal University Krasnoyarsk 660074Russia International laboratory“materials and Structures for Electro-and Magnetocaloric Energy Conversion” ITMO UniversitySt.Petersburg 197101Russia

We present the results of studies of thermal expansion,heat capacity,permittivity,polarization and the influence of different thermal conditions on the intensive electrocaloric ffect(ECE),△T_(AD),in a commercial multilayer capacitor based on doped BaTiO_(3).Investigations in a wide temperature range revealed one anomaly in the behavior of the physical properties at about 290 K characteristic for the *** measurements showed a high reversibility of ECE under equilibrium thermal *** agreement was found between the values of△T_(AD) determined by direct and indirect measurements at the electric field up to 15.4 kV/***-isothermal conditions lead,firstly,to decrease of large△T_(AD)≈0.94 K obtained in adiabatic conditions under E=308 kV/cm to 0.87 K,and,secondly,the appearance of a difference between the values of △T^(ON) and△T^(OFF) determined when the electric field is applied and *** this phenomenon and changing the frequency of the periodic electric field,E=15.4 kV/cm,the efect of cooling was obtained equal to[(OT^(ON)+AT^(OFF))/2]_(max)=-0.032 *** results obtained are useful for further development of the electrocaloric refrigeration technique without thermal switches.

关键词： Electrocaloric effect ferroelectrics layered structures nonequilibrium conditions phase transitions

Visible Light-Responsive N-Doped TiO_(2) Photocatalysis:Synthesis,Characterizations,and Applications

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Transactions of Tianjin University 2022年第1期28卷 33-52页

作者： Shiwen Du Juhong Lian Fuxiang Zhang State Key laboratory of Catalysis iChEMDalian Institute of Chemical PhysicsChinese Academy of SciencesDalian National Laboratory for Clean EnergyDalian 116023China

Photocatalysis based on semiconductors has recently been receiving considerable research interest because of its extensive applications in environmental remediation and renewable energy *** semiconductor-based materials that are vital to solar energy utilization have been extensively investigated,among which titanium oxide(TiO_(2))has attracted considerable attention because of its exceptional physicochemical ***,the sluggish responsiveness to visible light in the solar spectrum and the inefficient separation of photoinduced electron-hole pairs hamper the practical application of TiO_(2) *** overcome the aforementioned serious drawbacks of TiO_(2),numerous strategies,such as doping with foreign atoms,particularly nitrogen(N),have been improved in the past few *** review aims to provide a comprehensive update and description of the recent developments of N-doped TiO_(2) materials for visible lightresponsive photocatalysis,such as(1)the preparation of N-doped/co-doped TiO_(2) photocatalysts and(2)mechanistic studies on the reasons for visible light ***,the most recent and significant advances in the field of solar energy applications of modified N-doped TiO_(2) are *** analysis indicated the critical need for further development of these types of materials for the solar-to-energy conversion,particularly for water splitting purposes.

关键词： N-doped TiO_(2) Visible light-responsive Photocatalysis Solar energy

Raman scattering studies on PZT thin films for trigonal-tetragonal phase transition

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Journal of semiconductors 2009年第8期30卷 28-30页

作者：梁庭李珺泓杜文龙薛晨阳张文栋 Key laboratory of Instrumentation Science & Dynamic Measurement of the Chinese Ministry of Education North University of China

PZT thin films were successfully prepared through sol-gel. The annealing temperature was confirmed through DTA analyzing. The trigonal and tetragonal phase transition was analyzed through Raman scattering. The intensity of the A1（2TO） mode and the A1（3TO）T mode were enhanced with the increase of the annealing temperature. So, the conclusions were obtained that the trigonal phase turned into a tetragonal phase as temperature increased.

关键词： PZT Raman scattering phase transition

Metal–insulator transition in few-layered GaTe transistors

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Journal of semiconductors 2020年第7期41卷 28-32页

作者： Xiuxin Xia Xiaoxi Li Hanwen Wang Shenyang National laboratory for materials Science Institute of Metal ResearchChinese Academy of SciencesShenyang 110016China School of Material Science and Engineering University of Science and Technology of ChinaHefei 230026 China

Two-dimensional(2D)materials have triggered enormous interest thanks to their interesting properties and potential applications,ranging from nanoelectronics to energy catalysis and *** addition to other widely investigated 2D materials,GaTe,a layered material with a direct band gap of^1.7 e V,is of importance for applications such as ***,detailed information on the transport properties of GaTe is yet to be explored,especially at low ***,we report on electrical transport measurements on few-layered GaTe field effect transistors(FETs)encapsulated by h-BN at different *** find that by tuning the carrier density,ambipolar transport was realized in GaTe devices,and an electrical-field-induced metal to insulator transition(MIT)was observed when it was hole *** mobilities of GaTe devices show a clear dependence on temperature and increase with the decrease of temperature,reaching^1200 cm2 V-1s-1 at 3 *** findings may inspire further electronic studies in devices based on GaTe.

关键词： metal-insulator transition gate tunable GaTe field effect transistors

Mn-doped topological insulators: a review

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Journal of semiconductors 2019年第8期40卷 64-80页

作者： Jing Teng Nan Liu Yongqing Li Beijing National laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 China School of Physical Sciences University of Chinese Academy of Sciences Beijing 100049 China Songshan Lake materials laboratory Dongguan 523808 China

Topological insulators (TIs) host robust edge or surface states protected by time-reversal symmetry (TRS), which makes them prime candidates for applications in spintronic devices. A promising avenue of research for the development of functional TI devices has involved doping of three-dimensional (3D) TI thin film and bulk materials with magnetic elements. This approach aims to break the TRS and open a surface band gap near the Dirac point. Utilizing this gapped surface state allows for a wide range of novel physical effects to be observed, paving a way for applications in spintronics and quantum computation. This review focuses on the research of 3D TIs doped with manganese (Mn). We summarize major progress in the study of Mn doped chalcogenide TIs, including Bi2Se3, Bi2Te3, and Bi2(Te,Se)3. The transport properties, in particular the anomalous Hall effect, of the Mn-doped Bi2Se3 are discussed in detail. Finally, we conclude with future prospects and challenges in further studies of Mn doped TIs.

关键词： topological insulators thin films electron transport anomalous Hall effect magnetic doping

Synthesis and optical properties of nanostructured Ce(OH)_4

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Journal of semiconductors 2010年第3期31卷 25-28页

作者： Ansari A A Kaushik A National Physical laboratory Dr.K.S.Krishnan MargPusaNew Delhi-110012India

Nanocrystalline cerium hydroxide （NCs-Ce（OH）4） is a intermediate product of CeO2, synthesized successfully using a novel and simple wet chemical rout at an ambient temperature for the preparation of NCs CeO2 powder and film on mass scale for various purposes. The synthesized NCs-Ce（OH）4 was characterized using X-ray diffraction （XRD）, scanning electron microscopy （SEM）, thermo-gravimetric analysis （TGA）, Fourier transform infrared （FTIR）, UV-visible and photoluminescence （PL） spectroscopy. The average crystallite size of NCs-Ce（OH）4 has been estimated by the Scherrer equation to be 3-4 nm. The SEM examinations show that the surface texture was uniformly agglom- erated and homogeneous. Thermal analysis suggests that cerium （IV） ion is in the tetra hydrated form. Absorption and luminescence spectroscopic studies have been examined for future application in the development of optical devices.

关键词： NCs-Ce(OH)4 X-ray diffraction thermo-gravimetric analysis optical properties

Chlorine gas sensors using hybrid organic semiconductors of PANI/ZnPcCl_(16)

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Journal of semiconductors 2010年第8期31卷 88-92页

作者：雷廷平施云波吕文龙刘洋陶巍袁鹏亮林立伟孙道恒王立权 College of Physics and Mechanical & Electrical Engineering Xiamen University Mechanical Engineering Center for Post-doctoral studies Harbin Engineering University Higher Educational Key laboratory for Measuring & Control Technology and Instrumentations of Heilongjiang Province School of Measurement Control Tech & Communications EngineeringHarbin University of Science and Technology Qingyang Secondary Specialized School of Science and Technology Department of Mechanical Engineering and Berkeley Sensor and Actuator Center University of CaliforniaBerkeleyCalifornia 94720USA

PANI/ZnPcCl_（16）（polyaniline doped with sulfosalicylic acid/hexadecachloro zinc phthalocyanine） powders were vacuum co-deposited onto Si substrates,where Pt interdigitated electrodes were made by *** PANI/ZnPcCl_（16） films were characterized and analyzed by SEM,and the influencing factors on its intrinsic performance were analyzed and sensitivities of the sensors were investigated by exposure to chlorine（Cl_2） *** results showed that powders prepared with a stoichiometric ratio of（ZnPcCl_（16））_（0.6）（PANI）_（0.4） had a preferential sensitivity to Cl_2 gas, superior to those prepared otherwise;the optimal vacuum co-deposition conditions for the films are a substrate temperature of 160℃,an evaporation temperature of 425℃and a film thickness of 75 nm;elevating the operation temperature （above 100℃） or increasing the gas concentration（over 100 ppm） would improve the response characteristics,but there should be upper levels for ***,the gas sensing mechanism of PANI/ZnPcCl_（16） films was also discussed.

关键词： PANI/ZnPcCl_(16) hybrid organic semiconductors chlorine gas sensors vacuum co-deposition

Electron-transporting boron-doped polycyclic aromatic hydrocarbons:Facile synthesis and heteroatom doping positions-modulated optoelectronic properties

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Chinese Chemical Letters 2024年第4期35卷 447-451页

作者： Tingting Huang Zhuanlong Ding Hao Liu Ping-An Chen Longfeng Zhao Yuanyuan Hu Yifan Yao Kun Yang Zebing Zeng Key laboratory of Chemo/Biosensing and Chemometrics College of Chemistry and Chemical EngineeringHunan UniversityChangsha 410082China Shenzhen Research Institute of Hunan University Shenzhen 518000China Key laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key laboratory of Low-Dimensional Structural Physics and Devices School of Physics and Electronics Hunan UniversityChangsha 410082China

While heteroatom doping serves as a powerful strategy for devising novel polycyclic aromatic hydrocarbons(PAHs), the further fine-tuning of optoelectronic properties via the precisely altering of doping patterns remains a challenge. Herein, by changing the doping positions of heteroatoms in a diindenopyrene skeleton, we report two isomeric boron, sulfur-embedded PAHs, named Anti-B_(2)S_(2) and Syn-B_(2)S_(2), as electron transporting semiconductors. Detailed structure-property relationship studies revealed that the varied heteroatom positions not only change their physicochemical properties, but also largely affect their solid-state packing modes and Lewis base-triggered photophysical responses. With their low-lying frontier molecular orbital levels, n-type characteristics with electron mobilities up to 1.5 × 10^(-3)cm^(2)V^(-1)s^(-1)were achieved in solution-processed organic field-effect transistors. Our work revealed the critical role of controlling heteroatom doping patterns for designing advanced PAHs.

关键词： Polycyclic aromatic hydrocarbon Optoelectronic properties Heteroatom doping n-Type organic semiconductors Structure–property relationship