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Fabrication of High Quality Three-Dimensional Photonic Crystals

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Chinese Physics Letters 2004年第7期21卷 1289-1291页

作者： HUXiao-Yong LIUYuan-Hao CHENGBing-Ying ZHANGDao-Zhong MENGQing-Bo OpticalPhysicsLaboratory InstituteofPhysicsChineseAcademyofSciencesBeijing100080 statekeylaboratoryforsurfacephysics InstituteofPhysicsChineseAcademyofSciencesBeijing100080

High quality colloidal photonic crystals made from polystyrene spheres with diameter 240nm are fabricated by the vertical deposition method. The scanning electron microscopy (SEM) and the transmittance spectrum are used to characterize the properties of the photonic crystal. The SEM images show that there are few lattice defects. The transmittance of the photonic crystal is above 75% in the pass band at 700nm and is lower than 5% at the centre of the band gap, respectively. It is found that proper concentration is a very important factor to fabricate the photonic crystal when the diameter of the spheres is lower than 300nm.

关键词： Scanning electron microscopy

Structural properties of polycrystalline silicon films formed by pulsed rapid thermal processing

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Chinese Physics B 2002年第5期11卷 492-495页

作者：王永谦廖显伯等 statekeylaboratoryforsurfacephysics InstituteofSemiconductorsandCentreforCondensedMatterPhysicsChineseAcademyofSciencesBeijing100083China statekeylaboratoryforsurfacephysics InstituteofSemiconducto

A novel pulsed rapid thermal processing (PRTP) method has been used for realizing solid-phase crystallizationof amorphous silicon films prepared by plasma-enhanced chemical vapour deposition. The microstructure and surfacemorphology of the crystallized films were investigated using x-ray diffraction and atomic force microscopy. The resultsindicate that PRTP is a suitable post-crystallization technique for fabricating large-area polycrystalline silicon films withgood structural quality, such as large grain size, small lattice microstrain and smooth surface morphology on low-costglass substrates.

关键词： polycrystalline silicon film rapid thermal processing microstructure

Growth of Co Nanoclusters on Si3N4 Surface Formed on Si（111）

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Chinese Physics Letters 2003年第10期20卷 1871-1874页

作者：刘熙贾金锋王俊忠薛其坤 statekeylaboratoryforsurfacephysics InstituteofPhysicsChineseAcademyofSciencesBeijing100080

Room-Temperature Growth of A1 Films on Si（111）-7×7 Surface

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Chinese Physics Letters 2004年第8期21卷 1608-1611页

作者：刘洪张艳峰王得勇贾金锋薛其坤 statekeylaboratoryforsurfacephysics InstituteofPhysicsChineseAcademyofSciencesBeijing100080

Twin—layer films of copper phthalocyanine and amorphous titanyl or vanadyl phthalocyanine

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Chinese Physics B 2002年第4期11卷 393-398页

作者：沈电洪沈铁汉等 statekeylaboratoryforsurfacephysics InstituteofPhysicsChineseAcademyofSciencesBeijing100080China JoulePhysicsLaboratory InstituteforMaterialsResearchUniversityofSalfordMaxwell

Metallophthalocyanine (MPc) twin-layer thin films on glass substrates, consisting of copper phthalocyanine (CuPc)overlayer and amorphous vanatyl phthalocyanine (VOPc) as well as titanyl phthalocyanine (TiOPc) buffers, were found to have different gas sensing characteristics. These twin-layer thin films were studied using x-ray photoemission spectroscopy. Photoelectrons of either Ti core levels were found to be present at the surface, indicating the existence of possible molecular *** stability of the twin-layers under thermal annealing up to a maximum temperature of 250℃ and low-energy Aridprn bombardment was also examined and compared with that of CuPc directly grown on the substrates. We concluded that the twin-layer structures were thermally fairly stable. Ar ion bombardment,however, caused substantial damage to the Pc ligands and a reduction of the valence state of the central Cu atoms.

关键词： phthalocyanine x-ray photoemission spectra annealing Ar+ bombardment

Hydrogen passivation of multi—crystalline silicon solar cells

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Chinese Physics B 2003年第1期12卷 112-115页

作者：胡志华廖显伯等 statekeylaboratoryforsurfacephysics InstituteofSemiconductorsandCentreforCondensedMatterPhysicsChineseAcademyofSciencesBeijing100083China InstituteofSolarEnery YunnanNormalUn StateKeyLaboratoryfor

The effects of hydrogen passivation on multi-crystalline silicon (mc-Si) solar cells are reported in this *** plasma was generated by means of ac glow discharge in a hydrogen atmosphere. Hydrogen passivation was carried out with three different groups of mc-Si solar cells after finishing contacts. The experimental results demonstrated that the photovoltaic performances of the solar cell samples have been improved after hydrogen plasma treatment, with a relative increase in conversion efficiency up to 10.6%. A calculation modelling has been performed to interpret the experimental results using the model for analysis of microelectronic and photonic structures developed at Pennsylvania State University.

关键词： multi-crystalline silicon solar cells plasma hydrogen passivation

Single atomic manipulation and writing with scanning tunnelling microscopy at low temperatures

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Chinese Physics B 2002年第10期11卷 1042-1046页

作者：顾长志 KFBraum 等 statekeylaboratoryforsurfacephysics InstituteofPhysicsChineseAcademyofSciencesBeijing100080China DepartmentofPhysics InstituteofExperimentalPhysicsBerlinFreieUniversityArnimall

In the work reported in this paper, we have used a low-temperature scanning tunnelling microscope (LT-STM)system to manipulate accurately single atoms. We show how we can use a LT-STM to image and modify a bulk Ag(111) surface and manipulate Ag atoms from substrate and evaporated adsorbates on Ag(111) substrates. We present a synergistic combination of STM-induced modification and ordered arrays of nanometre-scale structures. In particular, we demonstrate the ability to modify Ag atomic nanometre structures on the Ag(111) substrate, and some English letters and a Chinese character can be written by single Ag atoms coming from the substrate and evaporated adsorbates on Ag(111). In this way, we supply an effective basis to explore the fundamental physical properties of a nanometre structure and to develop nanotechnology with a ‘bottom-up' approach.

关键词： low-temperature scanning tunnelling microscope single atomic manipulation artificial nanometre structure

Influence of external voltage on electronic transport properties of molecular junctions： the nonlinear transport behaviour

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Chinese Physics B 2005年第5期14卷 1036-1040页

作者：李宗良王传奎罗毅薛其坤 CollegeofPhysicsandElectronics ShandongNormalUniversityJinan250014China LaboratoryofTheoreticalChemistry RoyalInstituteofTechnologySCFABS-10691StockholmSweden statekeylaboratoryforsurfacephysics InstituteofPhysicsChineseAcademyofScienceBeijing100080China

The influence of external voltage on the charge transport properties of benzene-1,4-dithiolate molecular junction has been investigated. Variations of the geometric and electronic structures for the molecule caused by the appliedvoltage are calculated at ab initio level. Based on the numerical results, we find that the energy shift and expansion coefficients in the end-site of the molecule for the frontier molecular orbitals show nearly linear dependence on voltage in the interested voltage interval. The charge transport properties of the molecular junction are then studied by employing the elastic scattering Green's function method. It is shown that the voltage has an obvious effect on the I - V characteristic of the molecular junction, particularly the shape of the conductance curves. The I - V curves are consistent with the experimental measurement quite well.

关键词： electric field current-voltage curves molecular electronics