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1.56 kV/30 A vertical β-Ga2O3 Schottky barrier diodes with composite edge terminations

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Science China(Information Sciences) 2025年第2期68卷 389-390页

作者： Yitao FENG Hong ZHOU Sami ALGHAMDI Hao FANG Xiaorong ZHANG Yanbo CHEN Guotao TIAN Saud WASLY Yue HAO Jincheng ZHANG key Lab of wide Band Gap semiconductor Materials and devices School of MicroelectronicsXidian University Center of Excellence in Intelligent Engineering Systems (CEIES) King Abdulaziz University China Resources Microelectronics Limited

In recent years, large-area wide-bandgap（WBG） semiconductor materials have achieved numerous notable breakthroughs [1,2]. The ultra-WBG semiconductor β-Ga2O3,with its excellent material properties, is ideally suited for the fabrication of power devices. Moreover, it offers easily obtainable large-area substrates, with reported sizes up to 6 inches, produced through melt-grown crystal growth methods. These characteristics make β-Ga2O3highly attractive for future low-cost commercialization. Despite these advances, most research has focused on low-current and small-size diodes, with few studies addressing high-current and large-size diodes.

关键词： Schottky barrier diodes

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On-chip light control of semiconductor optoelectronic devices using integrated metasurfaces

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Opto-Electronic Advances 2025年第1期8卷 5-30页

作者： Cheng-Long Zheng Pei-Nan Ni Yi-Yang Xie Patrice Genevet Henan key laboratory of Diamond Optoelectronic Materials and devices Key Laboratory of Materials PhysicsMinistry of EducationSchool of PhysicsZhengzhou UniversityZhengzhou 450052China key laboratory of Optoelectronics Technology Beijing University of TechnologyMinistry of EducationBeijing 100124China Colorado School of Mines 1523 Illinois St.GoldenCO 80401USA

semiconductor optoelectronics devices,capable of converting electrical power into light or conversely light into electrical power in a compact and highly efficient manner represent one of the most advanced technologies ever developed,which has profoundly reshaped the modern life with a wide range of *** recent decades,semiconductor technology has rapidly evolved from first-generation narrow bandgap materials(Si,Ge)to the latest fourth-generation ultra-wide bandgap semiconductor(GaO,diamond,AlN)with enhanced performance to meet growing ***,merging semiconductor devices with other techniques,such as computer assisted design,state-of-the-art micro/nano fabrications,novel epitaxial growth,have significantly accelerated the development of semiconductor optoelectronics *** them,integrating metasurfaces with semiconductor optoelectronic devices have opened new frontiers for on-chip control of their electromagnetic response,providing access to previously inaccessible degrees of *** review the recent advances in on-chip control of a variety of semiconductor optoelectronic devices using integrated metasurfaces,including semiconductor lasers,semiconductor light emitting devices,semiconductor photodetectors,and low dimensional *** integration of metasurfaces with semiconductors offers wafer-level ultracompact solutions for manipulating the functionalities of semiconductor devices,while also providing a practical platform for implementing cuttingedge metasurface technology in real-world applications.

关键词： optoelectronics nanophotonics metasurfaces semiconductor

The in-situ parasitic microstructure interface and defect formation mechanism in (010) β-Ga_(2)O_(3) epitaxial film via MOCVD

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Science China Materials 2025年第2期68卷 515-522页

作者： Xianqiang Song Yunlong He Zhan Wang Xiaoli Lu Jing Sun Ying Zhou Yang Liu Jiatong Fan Xiaoning He Xuefeng Zheng Xiaohua Ma Yue Hao state key laboratory of wide-bandgap semiconductor devices and Integrated Technology National Engineering Research Center of Wide Band-Gap SemiconductorSchool of MicroelectronicsXidian UniversityXi’an 710071China School of Electronic Engineering Xi’an University of Posts&TelecommunicationsXi’an 710121China Guangzhou Institute of Technology Xidian UniversityGuangzhou 510555China Shaanxi semiconductor Industry Association Xi’an 710065China

In this study, a typical hillock surface defect wasdiscovered in (010) β-Ga_(2)O_(3) thin films grown by metal-organicchemical vapor deposition (MOCVD), and the morphologyand structure were systematically investigated. The observeddefects exhibit a polygonal shape with a ridge-like hillockalong the [001] direction. Transmission electron microscopy(TEM) microanalysis reveals that polygonal hillock defects arecomposed of twin grains forming an inverted pyramid shapeembedded in the epitaxial layer, which exhibits twofold rotational symmetry along the [100] crystal direction. Theboundary between the defective and perfect lattices appearsband-like, characterized by complex faults, with structuralrelationships between the twin region and the matrix identified as [001]matrix||[010]Defect and {−310}matrix||{−201}Defect. Theorigin of surface defects in the (010) β-Ga_(2)O_(3) homoepitaxiallayers could be attributed not only to the extent of substratedefects but also to epitaxial process conditions. The definitiveexplanation is the localized aggregation of gallium atoms/oxygen vacancies during the growth process, as evidenced byenergy-dispersive X-ray (EDX) analysis and optimized experiments. This work provides brand-new perspectives intothe study of defects in β-Ga_(2)O_(3) epitaxial films, which furtheradvances the application of Ga_(2)O_(3) materials in power devicetechnologies.

关键词： β-Ga_(2)O_(3) MOCVD surface defect

Two-dimensional analytical models for asymmetric fully depleted double-gate strained silicon MOSFETs

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Chinese Physics B 2011年第1期20卷 566-572页

作者：刘红侠李劲李斌曹磊袁博 key laboratory of Ministry of Education for wide bandgap semiconductor devices School of MicroelectronicsXidian University

This paper develops the simple and accurate two-dimensional analytical models for new asymmetric double-gate fully depleted strained-Si MOSFET. The models mainly include the analytical equations of the surface potential, surface electric field and threshold voltage, which are derived by solving two dimensional Poisson equation in strained-Si layer. The models are verified by numerical simulation. Besides offering the physical insight into device physics in the model, the new structure also provides the basic designing guidance for further immunity of short channel effect and draininduced barrier-lowering of CMOS-based devices in nanometre scale.

关键词： strained-Si double-gate MOSFET surface potential short-channel effect

Flat-roof phenomenon of dynamic equilibrium phase in the negative bias temperature instability effect on a power MOSFET

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Chinese Physics B 2014年第5期23卷 521-524页

作者：张月卓青青刘红侠马晓华郝跃 School of Microelectronics Xidian University state key Discipline laboratory of wide bandgap semiconductor Technologies Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of Ministry of Education School of Technical Physics Xidian University

The effect of the static negative bias temperature （NBT） stress on a p-channel power metal-oxide-semiconductor field-effect transistor （MOSFET） is investigated by experiment and simulation. The time evolution of the negative bias temperature instability （NBTI） degradation has the trend predicted by the reaction-diffusion （R-D） model but with an exaggerated time scale. The phenomena of the flat-roof section are observed under various stress conditions, which can be considered as the dynamic equilibrium phase in the R-D process. Based on the simulated results, the variation of the flat-roof section with the stress condition can be explained.

关键词： negative bias temperature instability (NBTI) reaction-diffusion model interface traps powerMOSFET

Effects of stress conditions on the generation of negative bias temperature instability-associated interface traps

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Chinese Physics B 2013年第11期22卷 547-551页

作者：张月蒲石雷晓艺陈庆马晓华郝跃 School of Microelectronics Xidian University state key Discipline laboratory of wide bandgap semiconductor Technologies Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of Ministry of Education School of Technical Physics Xidian University

The exponent n of the generation of an interface trap （Nit）, which contributes to the power-law negative bias temperature instability （NBTI） degradation, and the exponent’s time evolution are investigated by simulations with varying the stress voltage Vg and temperature T. It is found that the exponent n in the diffusion-limited phase of the degradation process is irrelevant to both Vg and T. The time evolution of the exponent n is affected by the stress conditions, which is reflected in the shift of the onset of the diffusion-limited phase. According to the diffusion profiles, the generation of the atomic hydrogen species, which is equal to the buildup of Nit, is strongly correlated with the stress conditions, whereas the diffusion of the hydrogen species shows Vg-unaffected but T-affected relations through the normalized results.

关键词： negative bias temperature instability reaction-diffusion model interface trap

The study on two-dimensional analytical model for gate stack fully depleted strained Si on silicon-germanium-on-insulator MOSFETs

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Chinese Physics B 2010年第10期19卷 485-491页

作者：李劲刘红侠李斌曹磊袁博 key laboratory of Ministry of Education for wide bandgap semiconductor devices School of Microelectronics Xidian University

Based on the exact resultant solution of two-dimensional Poisson＇s equation in strained Si and Si1-xCex layer, a simple and accurate *** model including surface channel potential, surface channel electric field, threshold voltage and subthreshold swing for fully depleted gate stack strained Si on silicon-germanium-on-insulator （SGOI） MOSFETs has been developed. The results show that this novel structure can suppress the short channel effects （SCE）, the drain-induced barrier-lowering （DIBL） and improve the subthreshold performance in nanoelectronics application. The model is verified by numerical simulation. The model provides the basic designing guidance of gate stack strained Si on SGOI MOSFETs.

关键词： silicon-germanium-on-insulator MOSFETs strained Si short channel effects the draininduced barrier-lowering

A 0.18μm CMOS single-inductor single-stage quadrature frontend for GNSS receiver

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Journal of semiconductors 2011年第9期32卷 99-105页

作者：李兵庄奕琪韩业奇邢晓岭李振荣龙强 key laboratory of the Ministry of Education for wide bandgap semiconductor Materials and devices School of MicroelectronicsXidian University

This paper presents an improved merged architecture for a low-IF GNSS receiver frontend,where the bias current and functions are reused in a stacked quadrature *** a single spiral inductor is implemented for the LC resonator and an extra 1/2 frequency divider is added as the quadrature LO signal generator. The details of the design are *** gain plan and noise figure are *** phase noise,quadrature accuracy and power consumption are *** test chip is fabricated though a 0.18μm RF CMOS process. The measured noise figure is 5.4 dB on average,with a gain of 43 dB and a IIP3 of-39 *** measured phase noise is better than -105 dBc/Hz at 1 MHz *** total power consumption is 19.8 mW with a 1.8 V supply. The experimental results satisfy the requirements for GNSS applications.

关键词： low power current reuse low-IF architecture RF frontend mixer GNSS

Design of a 0.18μm CMOS multi-band compatible low power GNSS receiver RF frontend

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Journal of semiconductors 2011年第3期32卷 116-126页

作者：李兵庄奕琪龙强靳钊李振荣靳刚 key laboratory of the Ministry of Education for wide bandgap semiconductor Materials and devices School of MicroelectronicsXidian University

This paper presents the design and implementation of a fully integrated multi-band RF receiver frontend for GNSS applications on L-band.A single RF signal channel with a low-IF architecture is adopted for multi-band operation on the RF section,which mainly consists of a low noise amplifier（LNA）,a down-converter,polyphase filters and summing *** improved cascode source degenerated LNA with a multi-band shared off-chip matching network and band switches is implemented in the first amplifying ***,a re-designed wideband double balance mixer is implemented in the down conversion stage,which provides better gain,noise figure and linearity *** a TSMC 0.18μm 1P4M RF CMOS process,a compact 1.27 GHz/1.575 GHz dualband GNSS frontend is realized in the proposed low-IF *** measurements exhibit the gains of 45 dB and 43 dB,and noise figures are controlled at 3.35 dB and 3.9 dB of the two frequency bands,*** frontend model consumes about 11.8-13.5 mA current on a 1.8 V power *** core occupies 1.91×0.53 mm2 while the total die area with ESD is 2.45×2.36 mm^2.

关键词： low power low IF multi-band noise figure RF frontend mixer