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Optical Diagnostics of Multi-Gap Gas Switches for Linear Transformer Drivers

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Plasma Science and Technology 2014年第7期16卷 677-682页

作者：盛亮李阳孙铁平丛培天张美彭博栋赵吉祯岳志勤魏福利袁媛 state key laboratory of intense pulsed radiation simulation and effect Northwest Institute of Nuclear Technology

The trigger characteristics of a multi-gap gas switch with double insulating layers,a square-groove electrode supporter and a UV pre-ionizing structure are investigated aided by a high sensitivity fiber-bundle array detector, a UV fiber detector, and a framing camera, in addition to standard electrical diagnostics. The fiber-bundle-array detector is used to track the turn-on sequence of each electrode gap at a timing precision of 0.6 ns. Each fiber bundle, including five fibers with different azimuth angles, aims at the whole emitting area of each electrode gap and is fed to a photomultiplier tube. The UV fiber detector with a spectrum response of 260-320 nm,including a fused-quartz fiber of 200 μm in diameter and a solar-blinded photomultiplier tube, is adopted to study the effect of UV pre-ionizing on trigger characteristics. The framing camera,with a capacity of 4 frames per shot and an exposure time of 5 ns, is employed to capture the evolution of channel arcs. Based on the turn-on light signal of each electrode gap, the breakdown delay is divided into statistical delay and formative delay. A decrease in both of them, a smaller switch jitter and more channel arcs are observed with lower gas pressure. An increase in trigger voltage can reduce the statistical delay and its jitter, while higher trigger voltage has a relatively small influence on the formative delay and the number of channel arcs. With the UV pre-ionizing structure at 0.24 MPa gas pressure and 60 kV trigger voltage, the statistical delay and its jitter can be reduced by 1.8 ns and 0.67 ns, while the formative delay and its jitter can only be reduced by 0.5 ns and 0.25 ns.

关键词： optical diagnostics multi-gap gas switches linear transformer driver

Single event upset on static random access memory devices due to spallation, reactor, and monoenergetic neutrons

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Chinese Physics B 2019年第10期28卷 387-396页

作者： Xiao-Ming Jin Wei Chen Jun-Lin Li Chao Qi Xiao-Qiang Guo Rui-Bin Li Yan Liu state key laboratory of intense pulsed radiation simulation and effect Northwest Institute of Nuclear Technology

This paper presents new neutron-induced single event upset(SEU) data on the SRAM devices with the technology nodes from 40 nm to 500 nm due to spallation, reactor, and monoenergetic neutrons. The SEU effect is investigated as a function of incident neutron energy spectrum, technology node, byte pattern and neutron fluence rate. The experimental data show that the SEU effect mainly depends on the incident neutron spectrum and the technology node, and the SEU sensitivity induced by low-energy neutrons significantly increases with the technology downscaling. Monte-Carlo simulations of nuclear interactions with device architecture are utilized for comparing with the experimental results. This simulation approach allows us to investigate the key parameters of the SEU sensitivity, which are determined by the technology node and supply voltage. The simulation shows that the high-energy neutrons have more nuclear reaction channels to generate more secondary particles which lead to the significant enhancement of the SEU cross-sections, and thus revealing the physical mechanism for SEU sensitivity to the incident neutron spectrum.

关键词： neutron SRAM SEU cross-section

Design and experimental research on a self-magnetic pinch diode under MV

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Plasma Science and Technology 2018年第1期20卷 95-100页

作者：张鹏飞胡杨孙江宋岩孙剑锋姚志明丛培天邱孟通邱爱慈 state key laboratory of Electrical Insulation and Power Equipment Xi'an Jiaotong University state key laboratory of intense pulse radiation of simulation and effect Northwest Institute of Nuclear Technology

A self-magnetic pinch diode （SMPD） integrating an anode foil-reinforced electron beam pinch focus and a small high-dose x-ray spot output was designed and optimized. An x-ray focal spot measuring system was developed in accordance with the principle of pinhole imaging. The designed SMPD and the corresponding measuring system were tested under ~MV, with 1.75 ~ 2 mm2 oval x-ray spots （AWE defined） and forward directed dose 1.6 rad at 1 m. Results confirmed that the anode foil can significantly strengthen the electron beam pinch focus, and the local spot measuring system can collect clear focal spot images. This finding indicated that the principle and method are feasible.

关键词： plasma pulsed x-ray flash radiography self-magnetic pinch diode

Impact of TID on response to pulsed X-ray irradiation in the bipolar operational amplifier

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Science China(Technological Sciences) 2015年第2期58卷 390-396页

作者： LI Rui Bin WANG Gui Zhen CHEN Wei MA Qiang LIU Yan LIN Dong Sheng YANG ShanChao BAI XiaoYan QI Chao JIN XiaoMing state key laboratory of intense pulsed radiation simulation and effect Northwest Institute of Nuclear Technology

Groups of a typical operational amplifier-μA741 were irradiated in a cobalt unit, each group accumulating a different total ionizing dose （TID）. The results showed that the TID caused power consumption current and slew rate （SR） to degenerate in ultra-linearity, owing to a severe reduction in the current gain of the internal LPNP transistors. pulsed X-ray irradiation experiments were carried out on the μA741 groups with different values, and the results revealed that the impact on the response to the pulsed X-ray irradiation was greater when the devices absorbed more TID. The mechanism for this is explained on the basis of the circuit construction of the μA741; the sensitive parameters of the circuit were obtained via simulation on SP1CE. The simulation results additionally showed that if the sensitive parameters were optimized, the duration of interruption caused by the pulsed X-ray irradiation would be reduced significantly. In addition, several proposals are provided for hardening the devices.

关键词： TID pulsed X-ray irradiation operational amplifier simulation

Pattern dependence in synergistic effects of total dose on single-event upset hardness

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Chinese Physics B 2016年第9期25卷 463-467页

作者：郭红霞丁李利肖尧张凤祁罗尹虹赵雯王园明 state key laboratory of intense pulsed radiation simulation and effect Northwest Institute of Nuclear Technology

The pattern dependence in synergistic effects was studied in a 0.18 μm static random access memory（SRAM） *** were performed under two SEU test environments：3 Me V protons and heavy *** results show different *** heavy ion SEU test,the degradation in the peripheral circuitry also existed because the measured SEU cross section decreased regardless of the patterns written to the SRAM *** simulation was *** degradation in n MOSFETs mainly induced the imprint effect in the SRAM cell,which is consistent with the measured results under the proton environment,but cannot explain the phenomena observed under heavy ion environment.A possible explanation could be the contribution from the radiation-induced GIDL in pMOSFETs.

关键词： pattern dependence total dose single event upset(SEU) static random access memory(SRAM)

Experimental Study of Current Loss of Stainless Steel Magnetically Insulated Transmission Line with Current Density at MA/cm Level

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Plasma Science and Technology 2014年第6期16卷 625-628页

作者：吴撼宇曾正中王亮平郭宁 Northwest Institute of Nuclear Technology state key laboratory of intense pulsed radiation simulation and effect

A magnetically insulated transmission line （MITL） is used to transmit high power electric pulses in large pulse power systems. However, current loss is unavoidable, especially when the current density is up to 1 MA/cm. In the paper, the current loss of an MITL made of stainless steel, which is usually used in large pulse power generators, is experimentally studied, and possible mechanisms to explain the current loss of the MITL are analyzed and discussed. From the experimental results, the relationship between loss current density and input current density follows approximately a power law. The loss is also related to the configuration of the MITL.

关键词： magnetically insulated transmission line current loss current density ion

Modeling Methods for the Main Switch of High pulsed-Power Facilities Based on Transmission Line Code

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Plasma Science and Technology 2014年第9期16卷 873-877页

作者：呼义翔曾江涛孙凤举魏浩尹佳辉丛培天邱爱慈 state key laboratory of intense pulsed radiation simulation and effect Northwest Institute of Nuclear Technology

Based on the transmission line code （TLCODE）, a circuit model is developed here for analyses of main switches in the high pulsed-power facilities. With the structure of the ZR main switch as an example, a circuit model topology of the switch is proposed, and in particular, calculation methods of the dynamic inductance and resistance of the switching arc are described. Moreover, a set of closed equations used for calculations of various node voltages are theoretically derived and numericMly discretized. Based on these discrete equations and the Matlab program, a simulation procedure is established for analyses of the ZR main switch. Voltages and currents at different key points are obtained, and comparisons are made with those of a PSpice L-C model. The comparison results show that these two models are perfectly in accord with each other with discrepancy less than 0.1%, which verifies the effectiveness of the TLCODE model to a certain extent.

关键词： transmission line code (TLCODE) main switch dynamic inductance dy-namic resistance

Experimental investigation on the development characteristics of initial electrons in a gas pressurized closing switch under DC voltage

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Plasma Science and Technology 2018年第4期20卷 164-169页

作者：翟戎骁邱孟通罗维熙丛培天黄涛尹佳辉张天洋 Skate key laboratory of intense pulsed radiation simulation and effect Northwest Institute of Nuclear Technology

As one of the most important elements in linear transformer driver(LTD) based systems, the gas pressurized closing switches are required to operate with a very low prefire probability during the DC-charging process to ensure reliable operation and stable output of the whole pulsed power system. The most direct and effective way to control the prefire probability is to select a suitable working coefficient. The study of the development characteristics of the initially generated electrons is useful for optimizing the working coefficient and improving the prefire characteristic of the switches. In this paper an ultraviolet pulsed laser is used to generate initial electrons inside the gap volume. A current measuring system is used to measure the time-dependent current generated by the growth of the initial electrons so as to study the development characteristics of the electrons under different working coefficients. Experimental results show that the development characteristics of the initial electrons are influenced obviously by the working coefficient. With the increase of the working coefficient, the development degree of the electrons increases consequently. At the same times, there is a threshold of working coefficient which produces the effect of ionization on electrons. The range of the threshold has a slow growth but remains close to 65% with the gas pressure increase. When the working coefficient increases further, γ processes are starting to be generated inside the gap volume. In addition, an optimal working coefficient beneficial for improving the prefire characteristic is indicated and further tested.

关键词： gas switch working coefficient prefire initial electron

Impacts of test factors on heavy ion single event multiple-cell upsets in nanometer-scale SRAM

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Journal of Semiconductors 2015年第11期36卷 63-68页

作者：罗尹虹张凤祁郭红霞肖尧赵雯丁李利王园明 state key laboratory of intense pulsed radiation simulation and effect Northwest Institute of Nuclear Technology

Single event multiple-cell upsets（MCU） increase sharply with the semiconductor devices scaling. The impacts of several test factors on heavy ion single event MCU in 65 nm SRAM are studied based on the buildup of MCU test data acquiring and processing technique, including the heavy ion LET, the tilt angle, the device orientation, the test pattern and the supply voltage; the MCU physical bitmaps are extracted correspondingly. The dependencies of parameters such as the MCU percentage, MCU mean and topological pattern on these factors are summarized and analyzed. This work is meaningful for developing a more reasonable single event test method and assessing the effectiveness of anti-MCU strategies on nanometer-scale devices.

关键词： multiple-cell upsets nanometer-scale SRAM test factors device orientation