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Low Loss and Low EMI Noise Trench IGBT with Shallow Emitter Trench Controlled P-Type Dummy Region

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Chinese Journal of electronics 2024年第2期33卷 326-335页

作者： Jinping ZHANG Xiaofeng LI Rongrong ZHU Kang WANG Bo ZHANG state key laboratory of electronic thin films and integrated devices University of Electronic Science and Technology of China (UESTC) Institute of electronic and Information engineering of UESTC in Guangdong

A novel trench insulated gate bipolar transistor（TIGBT） with a shallow emitter trench controlled P-type dummy region（STCP-TIGBT） is proposed.Compared with the conventional TIGBT with floating P-type dummy region（CFP-TIGBT） and TIGBT with floating P-type dummy region and normally on hole path（HFPTIGBT）,the proposed STCP structure not only speeds up the extraction of excessive holes in the turn-off process but also reduces the Miller plateau charge(Qgc).Therefore,both the power loss and electromagnetic interference（EMI） noise are significantly reduced.Simulation results show that the Qgcof the proposed device is only 501 nC/cm2,which is reduced by 58.5% and 26.4% when compared to the CFP-TIGBT and HFP-TIGBT,respectively.At same on-state voltage drop(Vceon) of 1.02 V,the turn-off loss(Eoff) of the proposed device is 13.49 mJ/cm2,which is 64.6%and 67.6% less than those of the CFP-TIGBT and HFP-TIGBT,respectively.Moreover,the reverse recovery dVak/dt of the freewheeling diode at same turn-on loss(Eon) of 31.8 mJ/cm2for the proposed STCP-TIGBT is only 2.15 kV/μs,which is reduced by 91.3% and 57.2% when compared to 24.69 kV/μs and 5.02 kV/μs for the CFP-TIGBT and HFPTIGBT,respectively.The reduced dV/dt significantly suppresses the electromagnetic interference noise generated by the proposed device.

关键词： Trench insulated gate bipolar transistor On-state voltage drop Turn-off loss Turn-on loss Electromagnetic interference noise Shallow emitter trench P-type dummy region

Fe-N_(x) sites coupled with core-shell FeS@C nanoparticles to boost the oxygen catalysis for rechargeable Zn-air batteries

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Journal of Energy Chemistry 2024年第3期90卷 565-577,I0013页

作者： Katam Srinivas Zhuo Chen Anran Chen Fei Ma Ming-qiang Zhu Yuanfu Chen school of integrated Circuit science and engineering and State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu 610054SichuanChina College of Mechanical and electronic engineering Northwest A&F UniversityYangling 712100ShaanxiChina school of Materials and Energy Yunnan UniversityKunming 650091YunnanChina

The development of efficient single-atom catalysts(SACs) for the oxygen reduction reaction(ORR)remains a formidable challenge,primarily due to the symmetric charge distribution of metal singleatom sites(M-N_(4)).To address such issue,herein,Fe-N_(x) sites coupled synergistic catalysts fabrication strategy is presented to break the uniform electronic distribution,thus enhancing the intrinsic catalytic activity.Precisely,atomically dispersed Fe-N_(x) sites supported on N/S-doped mesoporous carbon(NSC)coupled with FeS@C core-shell nanoparticles(FAS-NSC@950) is synthesized by a facile hydrothermal reaction and subsequent pyrolysis.Due to the presence of an in situ-grown conductive graphitic layer(shell),the FeS nanoparticles(core) effectively adjust the electronic structure of single-atom Fe sites and facilitate the ORR kinetics via short/long-range coupling interactions.Consequently,FAS-NSC@950displays a more positive half-wave potential(E_(1/2)) of 0.871 V with a significantly boosted ORR kinetics(Tafel slope=52.2 mV dec^(-1)),outpacing the commercial Pt/C(E_(1/2)=0.84 V and Tafel slope=54.6 mV dec^(-1)).As a bifunctional electrocatalyst,it displays a smaller bifunctional activity parameter(ΔE) of 0.673 V,surpassing the Pt/C-RuO_(2) combination(ΔE=0.724 V).Besides,the FAS-NSC@950-based zincair battery(ZAB) displays superior power density,specific capacity,and long-term cycling performance to the Pt/C-Ir/C-based ZAB.This work significantly contributes to the field by offering a promising strategy to enhance the catalytic activity of SACs for ORR,with potential implications for energy conversion and storage technologies.

关键词： Fe-N_(x)sites Core-shell FeS@C Synergistic interactions Oxygen reduction reaction Zn-air battery

Device design principles and bioelectronic applications for flexible organic electrochemical transistors

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International Journal of Extreme Manufacturing 2024年第1期6卷 126-153页

作者： Lin Gao Mengge Wu Xinge Yu Junsheng Yu state key laboratory of electronic thin films and integrated devices School of Optoelectronic Science and EngineeringUniversity of Electronic Science and Technology of China(UESTC)Chengdu 610054People’s Republic of China Department of Biomedical engineering City University of Hong KongHong Kong Special Administrative Region of ChinaPeople’s Republic of China

Organic electrochemical transistors(OECTs) exhibit significant potential for applications in healthcare and human-machine interfaces, due to their tunable synthesis, facile deposition, and excellent biocompatibility. Expanding OECTs to the fexible devices will significantly facilitate stable contact with the skin and enable more possible bioelectronic applications. In this work,we summarize the device physics of fexible OECTs, aiming to offer a foundational understanding and guidelines for material selection and device architecture. Particular attention is paid to the advanced manufacturing approaches, including photolithography and printing techniques, which establish a robust foundation for the commercialization and large-scale fabrication. And abundantly demonstrated examples ranging from biosensors, artificial synapses/neurons, to bioinspired nervous systems are summarized to highlight the considerable prospects of smart healthcare. In the end, the challenges and opportunities are proposed for fexible OECTs. The purpose of this review is not only to elaborate on the basic design principles of fexible OECTs, but also to act as a roadmap for further exploration of wearable OECTs in advanced bio-applications.

关键词： flexible organic electrochemical transistors wearable bioelectronics manufacturing approaches device physics neuromorphic applications

NbN quantum dots anchored hollow carbon nanorods as efficient polysulfide immobilizer and lithium stabilizer for Li-S full batteries

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Journal of Energy Chemistry 2024年第1期88卷 260-271,I0007页

作者： Fei Ma Zhuo Chen Katam Srinivas Ziheng Zhang Yu Wu Dawei Liu Hesheng Yu Yue Wang Xinsheng Li Ming-qiang Zhu Qi Wu Yuanfu Chen school of integrated Circuit science and engineering and State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and TechnologyChengdu 610054SichuanChina College of science and Institute of Oxygen Supply Center of Tibetan Studies(Everest Research Institute)Tibet UniversityLhasa 850000TibetChina College of Mechanical and electronic engineering Northwest A&F UniversityXianyang 712100ShaanxiChina

The shuttle effect of lithium polysulfides(LiPSs)and uncontrollable lithium dendrite growth seriously hinder the practical application of lithium-sulfur(Li-S)batteries.To simultaneously address such issues,monodispersed Nb N quantum dots anchored on nitrogen-doped hollow carbon nanorods(NbN@NHCR)are elaborately developed as efficient Li PSs immobilizer and Li stabilizer for high-performance Li-S full batteries.Density functional theory(DFT)calculations and experimental characterizations demonstrate that the sulfiphilic and lithiophilic NbN@NHCR hybrid can not only efficiently immobilize the soluble Li PSs and facilitate diffusion-conversion kinetics for alleviating the shuttling effect,but also homogenize the distribution of Li+ions and regulate uniform Li deposition for suppressing Li-dendrite growth.As a result,the assembled Li-S full batteries(NbN@NHCR-S||Nb N@NHCR-Li)deliver excellent long-term cycling stability with a low decay rate of 0.031%per cycle over 1000 cycles at high rate of 2 C.Even at a high S loading of 5.8 mg cm^(-2)and a low electrolyte/sulfur ratio of 5.2μL mg^(-1),a large areal capacity of 6.2 mA h cm^(-2)can be achieved in Li-S pouch cell at 0.1 C.This study provides a new perspective via designing a dual-functional sulfiphilic and lithiophilic hybrid to address serious issues of the shuttle effect of S cathode and dendrite growth of Li anode.

关键词： Dual-functional host NbN quantum dots Shuttle effect Dendrite-free Li anode Li-S full batteries

Wafer-level substrate-free YIG single crystal film for a broadband tunable terahertz isolator

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Photonics Research 2024年第3期12卷 505-513页

作者： XILAI ZHANG DAN ZHAO DING ZHANG QIANG XUE FEI FAN YULONG LIAO QINGHUI YANG QIYE WEN school of electronic science and engineering State Key Laboratory of Electronic Thin Film and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu 610054China Tianjin key laboratory of Optoelectronic Sensor and Sensing Network Technology Institute of Modern OpticsNankai UniversityTianjin 300350China Shenzhen Institute for Advanced Study University of Electronic Science and Technology of ChinaShenzhen 518110China

Yttrium iron garnet(YIG)is a promising material for various terahertz applications due to its special optical properties.At present,a high-quality YIG wafer is the desire of terahertz communities and it is still challenging to prepare substrate-free YIG single crystal films.In this work,we prepared wafer-level substrate-free La:YIG single crystal films,for the first time,to our knowledge.Terahertz optical and magneto-optical properties of La:YIG films were characterized by terahertz time domain spectroscopy(THz-TDS).Results show that the as-prepared La:YIG film has an insertion loss of less than 3 dB and a low absorption coefficient of less than10 cm-1below 1.6 THz.Benefitting from the thickness of the substrate-free YIG films and low insertion loss,their terahertz properties could be further manipulated by simply using a wafer-stacking technique.When four La:YIG films were stacked,there was an insertion loss of less than 10 dB in the range of 0.1-1.2 THz.The Faraday rotation angle of the four-layer-stacked La:YIG films reached 19°,and the isolation could reach17 dB.By further increasing the stacking number to eight pieces,a remarkable Faraday rotation angle of45°was achieved with an isolation of 23 dB,which is important for practical application in the THz band.This material may provide a milestone opportunity to make various non-reciprocal devices,such as isolators and phase shifters.

关键词： YIG film insertion

Spin transport characteristics modulated by the GeBi interlayer in Y_(3)Fe_(5)O_(12)/GeBi/Pt heterostructures

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Chinese Physics B 2024年第2期33卷 471-475页

作者：李明明张磊金立川郭海中 key laboratory of Materials Physics Ministry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China state key laboratory of electronic thin films&integrated devices University of Electronic Science and Technology of ChinaChengdu 610054China Institute of Quantum Materials and Physics Henan Academy of SciencesZhengzhou 450046China

For the past few years,germanium-based semiconductor spintronics has attracted considerable interest due to its potential for integration into mainstream semiconductor technology.The main challenges in the development of modern semiconductor spintronics are the generation,detection,and manipulation of spin currents.Here,the transport characteristics of a spin current generated by spin pumping through a GeBi semiconductor barrier in Y_(3)Fe_(5)O_(12)/GeBi/Pt heterostructures were investigated systematically.The effective spin-mixing conductance and inverse spin Hall voltage to quantitatively describe the spin transport characteristics were extracted.The spin-injection efficiency in the Y_(3)Fe_(5)O_(12)/GeBi/Pt heterostructures is comparable to that of the Y_(3)Fe_(5)O_(12)/Pt bilayer,and the inverse spin Hall voltage exponential decays with the increase in the barrier thickness.Furthermore,the band gap of the GeBi layer was tuned by changing the Bi content.The spin-injection efficiency at the YIG/semiconductor interface and the spin transportation within the semiconductor barrier are related to the band gap of the GeBi layer.Our results may be used as guidelines for the fabrication of efficient spin transmission structures and may lead to further studies on the impacts of different kinds of barrier materials.

关键词： spin current Y_(3)Fe_(5)O_(12)/GeBi/Pt heterostructures spin pumping inverse spin Hall effect

Simultaneous microwave characterization of wafer-level optoelectronic transceiver chips based on photonic sampling and mapping

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science China(Information sciences) 2024年第2期67卷 337-338页

作者： Yutong HE Xinhai ZOU Ying XU Zhihui LI Naidi CUI Junbo FENG Yali ZHANG Zhiyao ZHANG Shangjian ZHANG Yong LIU Ninghua ZHU Research Center for Microwave Photonics State Key Laboratory of Electronic Thin Films and Integrated DevicesSchool of Optoelectronic Science and EngineeringUniversity of Electronic Science and Technology of China Chongqing United Microelectronics Center (CUMEC) Xiongan Institute of Innovation Chinese Academy of Sciences

Photonic integrated circuits(PICs) promise future parallelism growths of high-performance communication, computation, and offer unprecedented bandwidth scalability with reduced power consumption as a viable replacement for an electrical wire with an optoelectronic transceiver consisting of a transmitter and a receiver integrated on the same wafer.

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High-performance piezoresistive sensors based on transfer-free large-area PdSe_(2) films for human motion and health care monitoring

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InfoMat 2024年第1期6卷 139-149页

作者： Rui Zhang Jie Lin Tao He Jiafang Wu Zhuojun Yang Liwen Liu Shaofeng Wen Yimin Gong Haifeng Lv Jing Zhang Yi Yin Fangjia Li Changyong Lan Chun Li state key laboratory of electronic thin films and integrated devices School of Optoelectronic Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengduthe People's Republic of China school of Physics University of Electronic Science and Technology of ChinaChengduthe People's Republic of China Sichuan Academy of Medical sciences and Sichuan People's Hospital Chengduthe People's Republic of China school of Medicine University of Electronic Science and Technology of ChinaChengduthe People's Republic of China

Two-dimensional transition metal dichalcogenides(TMDs)are needed in highperformance piezoresistive sensors due to their strong strain-induced bandgap modification and thereby large gauge factors.However,integrating a conventional high-temperature chemical vapor deposition(CVD)-grown TMD with a flexible substrate necessitates a transfer process that inevitably degrades the sensing properties of the TMDs and increases the overall fabrication complexity.We present a high-performance piezoresistive strain sensor that employs largearea PdSe_(2) films grown directly on polyimide(PI)substrates via plasma-assisted selenization of a sputtered Pd film.The reliable strain transfer from the substrate to the PdSe_(2) film ensures an outstanding strain-sensing capability of the sensor.Specifically,the sensors have a gauge factor of up to315±2.1,a response time under 25 ms,a detection limit of 8×10^(-6),and an exceptional stability of over 104 loadingunloading cycles.By attaching the sensors to the skin surface,we demonstrate their application for measuring physiological parameters in health care monitoring,including motion,voice,and arterial pulse vibration.Furthermore,using the PdSe_(2) film sensor combined with deep learning technology,we achieved intelligent recognition of artery temperature from arterial pulse signals with only a 2%difference between predicted and actual temperatures.The excellent sensing performance,together with the advantages of low-temperature fabrication and simple device structure,make the PdSe_(2) film sensor promising for wearable electronics and health care sensing systems.

关键词： layered crystal PdSe_(2) piezoresistive effect strain sensor

羧基表面修饰与钾离子层间调控双重优化的氮化碳用于增强CO_(2)光还原性能

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science China Materials 2024年第2期67卷 473-483页

作者：关晨廖宇龙向全军 state key laboratory of electronic thin Film and integrated devices School of Electronic Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu 610054China

对石墨相氮化碳(g-C_(3)N_(4))的表面和层间结构进行同时优化,可以显著提高其光生载流子分离效率.然而,将具有特定优势的改性策略有效整合,从而构建由体相到表面的电荷传输通道仍存在巨大挑战.在此,我们提出了一种利用羧基和钾离子共修... 详细信息

对石墨相氮化碳(g-C_(3)N_(4))的表面和层间结构进行同时优化,可以显著提高其光生载流子分离效率.然而,将具有特定优势的改性策略有效整合,从而构建由体相到表面的电荷传输通道仍存在巨大挑战.在此,我们提出了一种利用羧基和钾离子共修饰g-C_(3)N_(4)的新方法,用于引导其动态电荷转移过程.具体而言,我们将羧基官能团修饰在表面,通过其吸电子效应产生的驱动力改善表面的载流子动力学.同时,我们将钾离子插入g-C_(3)N_(4)层间,通过连接相邻层间促进载流子的跨层传输.该双功能光催化剂在无需助催化剂或牺牲剂的气固体系中实现了高达17.93μmol g^(-1)h^(-1)的CO产出速率,比未改性的g-C_(3)N_(4)高出8.68倍.这项工作有望进一步加深我们对光催化剂材料体相和层间区域载流子定向迁移机制的理解.

关键词： surface carboxyl functionalization interlayer potassium ions regulation charge carrier dynamics carbon nitride CO_(2)photoreduction