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Flexible molecules dedicate to release strain of inverted inorganic perovskite solar cell

Journal of Energy Chemistry 2025年第1期100卷 87-93页

作者： Hongrui Sun Sanlong Wang Pengyang Wang Yali Liu Shanshan Qi Biao Shi Ying Zhao Xiaodan Zhang Institute of Photoelectronic thin Film devices and Technology Renewable Energy Conversion and Storage Center State Key Laboratory of Photovoltaic Materials and CellsNankai University key laboratory of Photoelectronic thin Film devices and Technology of Tianjin Haihe laboratory of Sustainable Chemical Transformations Engineering Research Center of thin Film Photoelectronic Technology of Ministry of Education Collaborative Innovation Center of Chemical Science and Engineering (Tianjin)

The tensile strain in inorganic perovskite films induced by thermal annealing is one of the primary factors contributing to the inefficiency and instability of inorganic perovskite solar cells （IPSCs）,which reduces the defect formation ***,a flexible molecule 5-maleimidovaleric acid （5-MVA） was introduced as a strain buffer to release the residual strain of *** anhydride and carboxyl groups in 5-MVA interact strongly with the uncoordinated Pb2+through Lewis acid-base reaction,thus tightly“pull”the perovskite *** in-between soft carbon chain increased the structural flexibility of CsPbI2.85Br0.15perovskite materials,which effectively relieved the intrinsic internal strain of CsPbI2.85Br0.15,resisted the corrosion of external strain,and also reduced the formation of defects such as VIand *** addition,the introduction of 5-MVA improved crystal quality,passivated residual defects,and narrowed energy level ***,power conversion efficiency （PCE） of NiOxbased inverted IPSCs increased from 19.25% to 20.82% with the open-circuit voltage enhanced from 1.164 V to 1.230 *** release of strain also improved the stability of CsPbI2.85Br0.15perovskite films and devices.

关键词： Inverted inorganic perovskite solar cells Flexible molecules Strain release Crystallization Energy barrier High PCE

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Achieving ultralow leakage current in Schottky-MIS cascode anode lateral field-effect diode based on AlGaN/GaN HEMT

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Science China(Information Sciences) 2025年第1期 379-385页

作者： Fangzhou WANG Changhong GAO Guojian DING Cheng YU Zhuocheng WANG Xiaohui WANG Qi FENG Ping YU Peng ZUO Wanjun CHEN Yang WANG Haiqiang JIA Hong CHEN Bo ZHANG Zeheng WANG Songshan Lake Materials laboratory School of Microelectronics Southern University of Science and Technology state key laboratory of electronic thin films and integrated devices University of Electronic Science and Technology of China Manufacturing Commonwealth Scientific and Industrial Research Organisation

In this paper,we design and fabricate a Schottky-metal-insulator-semiconductor（MIS） cascode anode GaN lateral field-effect diode（CA-LFED） to achieve ultralow reverse leakage current(ILEAK).The device based on AlGaN/GaN highelectron-mobility-transistor（HEMT） includes a normally-off MIS-controlled channel that is cascoded with a high barrier height Schottky *** reverse bias,the high electric-field is effectively prevented by the normally-off MIS-controlled channel *** with the high barrier height Schottky contact,this feature significantly suppresses the *** by the device fabrication,the CA-LFED with high breakdown voltage（BV）>600 V shows an ultralow ILEAKof 3.6×10-9A/mm as well as a low forward voltage drop（VF） of 2.2 *** performance suggests that the CA-LFED can be a promising candidate for ultralow ILEAKand better VF-ILEAKtrade-off GaN power diode applications.

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Analysis on the Characteristic Properties of PEDOT Nano-particle Based on Reversed Micelle Method

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Journal of Wuhan University of Technology(Materials Science) 2011年第3期26卷 422-428页

作者：郑华靖 state key laboratory of electronic thin films&integrated devices School of Optoelectronic InformationUniversity of Electronic Science and Technology of China

Based on the study of a new type of conducting polymer poly （3,4-ethylenedioxythiophene）（PEDOT）,we focussed on the preparation and characteristics of PEDOT nanoparticles made by reversed micelle ***,we deeply investigated the optical,electrical and the thermal stability of PEDOT *** main results are as follows： the small-sized PEDOT nanoparticles were prepared and utilized by different methods,such as ultraviolet/visible （UV-Vis） spectroscopy,Fourier-transform infrared （FT- IR） spectrum,scanning electron microscopy（SEM） and so *** results show that the amount of oxidizer,ultrasonic treatment,polymerizing temperature and doping degree can influent morphology,electrical ability and gas sensitivity of PEDOT *** Bragg peaks of nanoparticles at 6.7°,12.7°,25° were observed by XRD and the better orientation of molecular chain was attributed to the effective doping of toluene-p-sulfonic acid,which also resulted in an enhancement of thermal stability of nanoparticles than conventional PEDOT.

关键词： poly (3 4-ethylenedioxythiophene) conducting polymer reversed micelle nano-particle photoelectric properties thermal stability

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A new structure and its analytical model for the vertical interface electric field of a partial-SOI high voltage device

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Chinese Physics B 2010年第3期19卷 496-502页

作者：胡盛东张波李肇基罗小蓉 state key laboratory of electronic thin films and integrated devices University of Electronic Science and Technology of China

A new partial-SOI （PSOI） high voltage device structure called a CI PSOI （charge island PSOI） is proposed for the first time in this paper. The device is characterized by a charge island layer on the interface of the top silicon layer and the dielectric buried layer in which a series of equidistant high concentration n＋-regions is inserted. Inversion holes resulting from the vertical electric field are located in the spacing between two neighbouring n＋-regions on the interface by the force with ionized donors in the undepleted n＋-regions, and therefore effectively enhance the electric field of the dielectric buried layer （Ei） and increase the breakdown voltage （BV）, thereby alleviating the self-heating effect （SHE） by the silicon window under the source. An analytical model of the vertical interface electric field for the CI PSOI is presented and the analytical results are in good agreement with the 2D simulation results. The BV and El of the CI PSOI LDMOS increase to 631 V and 584 V/μm from 246 V and 85.8 V/μm for the conventional PSOI with a lower SHE, respectively. The effects of the structure parameters on the device characteristics are analysed for the proposed device in detail.

关键词： interface charges breakdown voltage partial-SOI self-heating effect

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Ab initio study of oxygen-vacancy LaAlO_3(001) surface

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Chinese Physics B 2008年第2期17卷 655-661页

作者：唐金龙朱俊秦文峰熊杰李言荣 state key laboratory of electronic thin films and integrated devices University of Electronic Science and Technology of China

Density functional theory is used to investigate the surface structures and the energies of two possible terminated LaAlO3 （001） surfaces with oxygen vacancies, i.e. LaO- and AlO2-terminated surfaces. The large displacements of ions, deviated from their crystalline sites, can lead to the formation of the surface rumpling. From thermodynamics analysis, the AlO2-terminated surface with oxygen-vacancies is less stable than the LaO-terminated one. Some states in the gap lie under the Fermi level by about -1eV in the LaO-terminated surface with oxygen vacancies. For the AlO2- terminated oxygen-vacancy surface, some O 2p states move into the mid-gap region and become partially unoccupied. The two types of termination surfaces exhibit conduction related to oxygen vacancies. Our results can contribute to the application of LAO films to high dielectric constant materials.

关键词： oxygen vacancy surface conduction density functional calculation

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A low on-resistance buried current path SOI p-channel LDMOS compatible with n-channel LDMOS

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Chinese Physics B 2013年第6期22卷 542-548页

作者：周坤罗小蓉范远航罗尹春胡夏融张波 state key laboratory of electronic thin films and integrated devices University of Electronic Science and Technology of China

A novel low specific on-resistance （Ron,sp） silicon-on-insulator （SO1） p-channel lateral double-diffused metal-oxide semiconductor （pLDMOS） compatible with high voltage （HV） n-channel LDMOS （nLDMOS） is proposed. The pLDMOS is built in the N-type SO1 layer with a buried P-type layer acting as a current conduction path in the on-state （BP SOl pLD- MOS）. Its superior compatibility with the HV nLDMOS and low voltage （LV） complementary metal-oxide semiconductor （CMOS） circuitry which are formed on the N-SOl layer can be obtained. In the off-state the P-buried layer built in the NSOI layer causes multiple depletion and electric field reshaping, leading to an enhanced （reduced） surface field （RESURF） effect. The proposed BP SO1 pLDMOS achieves not only an improved breakdown voltage （BV） but also a significantly reduced Ron,sp. The BV of the BP SO1 pLDMOS increases to 319 V from 215 V of the conventional SO1 pLDMOS at the same half cell pitch of 25 μm, and Ron,sp decreases from 157 mΩ.cm2 to 55 mΩ.cm2. Compared with the PW SO1 pLDMOS, the BP SO1 pLDMOS also reduces the Ron,sp by 34% with almost the same BV.

关键词： silicon-on-insulator p-channel LDMOS p-buried layer breakdown voltage

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Ultralow turnoff loss dual-gate SOI LIGBT with trench gate barrier and carrier stored layer

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Chinese Physics B 2016年第12期25卷 424-429页

作者：何逸涛乔明张波 state key laboratory of electronic thin films and integrated devices University of Electronic Science and Technology of China

A novel ultralow turnoff loss dual-gate silicon-on-insulator （SOI） lateral insulated gate bipolar transistor （LIGBT） is proposed. The proposed SOI LIGBT features an extra trench gate inserted between the p-well and n-drift, and an n-type carrier stored （CS） layer beneath the p-well. In the on-state, the extra trench gate acts as a barrier, which increases the cartier density at the cathode side of n-drift region, resulting in a decrease of the on-state voltage drop （Von）. In the off-state, due to the uniform carder distribution and the assisted depletion effect induced by the extra trench gate, large number of carriers can be removed at the initial turnoff process, contributing to a low turnoff loss （Eoff）. Moreover, owing to the dual-gate field plates and CS layer, the carrier density beneath the p-well can greatly increase, which further improves the tradeoff between Eoff and Von. Simulation results show that Eoff of the proposed SOI LIGBT can decrease by 77% compared with the conventional trench gate SOI LIGBT at the same Von of 1.1 V.

关键词： lateral insulated gate bipolar transistor (LIGBT) turnoff loss trench gate barrier carrier storedlayer

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Monolithic integration of an AlGaN/GaN metal-insulator field-effect transistor with an ultra-low voltage-drop diode for self-protection

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Chinese Physics B 2012年第8期21卷 459-464页

作者：汪志刚陈万军张竞张波李肇基 state key laboratory of electronic thin films and integrated devices University of Electronic Science and Technology of China

In this paper, we present a monolithic integration of a self-protected AlGaN/GaN metal-insulator field-effect transistor （MISFET）. An integrated field-controlled diode on the drain side of the AlGaN/GaN MISFET features a self- protected function for a reverse bias. This diode takes advantage of the recessed-barrier enhancement-mode technique to realize an ultra-low voltage drop and a low turn-ON voltage. In the smart monolithic integration, this integrated diode can block a reverse bias （〉 70 V/μm） and suppress the leakage current （〈 5 × 10-11 A/mm）. Compared with conventional monolithic integration, the numerical results show that the MISET integrated with a field-controlled diode leads to a good performance for smart power integration. And the power loss is lower than 50% in conduction without forward current degeneration.

关键词： AlGaN/GaN AlGaN/GaN heterostructures metal-insulator field-effect transistor field-controlled diode

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Simulation of a high-performance enhancement-mode HFET with back-to-back graded AlGaN layers

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Science China(Information Sciences) 2019年第6期62卷 87-97页

作者： Fu PENG Chao YANG Siyu DENG Dongya OUYANG Bo ZHANG Jie WEI Xiaorong LUO state key laboratory of electronic thin films and integrated devices University of Electronic Science and Technology of China

A novel three-dimensional hole gas(3 DHG) enhancement-mode(E-mode) heterostructure fielde?ect transistor(HFET) is proposed and investigated. It features back-to-back graded AlGaN(BGA) barrier layers consisting of a positive-graded AlGaN layer and a negative-graded AlGaN layer, which form polarization gradient and subsequently induce the three-dimensional electron gas(3 DEG) and 3 DHG in the positiveand negative-graded AlGaN layers, respectively. The source and drain are located at the same side of the metal-insulator-semiconductor(MIS) trench gate, and the source is in contact with the HfO2 gate ***, the on-state current is significantly improved owing to the high-density 3 DEG in the positive-graded AlGaN. Next, the vertical conductive channel between the source and 3 DEG is blocked by the 3 DHG, thereby realizing the E-mode. The threshold voltage(Vth) can be modulated by a partial doping conductive ***, a high breakdown voltage(BV) is obtained, because the polarization junction formed by the polarization charges assists in depleting the drift region in the o?-state. Next, the BGA-HFET is smaller than the conventional HFET(Con-HFET) owing to the special location of the source. The BV of the proposed HFET sharply increases to 919 V from 39 V of the Con-HFET with the same gate-drain spacing, and the saturation drain current is increased by 103.5%.

关键词： graded AlGaN 3DHG-3DEG large on-state current high voltage enhancement mode

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An ultra-low specific on-resistance trench LDMOS with a U-shaped gate and accumulation layer

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Chinese Physics B 2015年第4期24卷 399-404页

作者：李鹏程罗小蓉罗尹春周坤石先龙张彦辉吕孟山 state key laboratory of electronic thin films and integrated devices University of Electronic Science and Technology of China

An ultra-low specific on-resistance （Ron,sp） oxide trench-type silicon-on-insulator （SOI） lateral double-diffusion metal-oxide semiconductor （LDMOS） with an enhanced breakdown voltage （BV） is proposed and investigated by simulation. There are two key features in the proposed device： one is a U-shaped gate around the oxide trench, which extends from source to drain （UG LDMOS）; the other is an N pillar and P pillar located in the trench sidewall. In the on-state, electrons accumulate along the U-shaped gate, providing a continuous low resistance current path from source to drain. The Ron,sp is thus greatly reduced and almost independent of the drift region doping concentration. In the off-state, the N and P pillars not only enhance the electric field （E-field） strength of the trench oxide, but also improve the E-field distribution in the drift region, leading to a significant improvement in the BV. The BV of 662 V and Ron,sp of 12.4 mΩ.cm2 are achieved for the proposed UG LDMOS. The BV is increased by 88.6% and the Ron,sp is reduced by 96.4%, compared with those of the conventional trench LDMOS （CT LDMOS）, realizing the state-of-the-art trade-off between BV and Ron,sp.

关键词： trench U-shaped gate specific on-resistance breakdown voltage

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