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Smooth Surface Morphology of Hydrogenated Amorphous Silicon Film Prepared by Plasma Enhanced Chemical Vapor Deposition

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Plasma Science and technology 2009年第5期11卷 569-575页

作者：闫许冯飞张进王跃林 state key laboratory of transducer technology Graduate School of Chinese Academy of Sciences

Influence of the parameters of plasma enhanced chemical vapor deposition （PECVD） on the surface morphology of hydrogenated amorphous silicon （α-Si：H） film was investigated. The root-mean-square （RMS） roughness of the film was measured by atomic force microscope （AFM） and the relevant results were analyzed using the surface smoothing mechanism of film deposition. It is shown that an α-Si：H film with smooth surface morphology can be obtained by increasing the PH3/N2 gas flow rate for 10% in a high frequency （HF） mode. For high power, however, the surface morphology of the film will deteriorate when the Sill4 gas flow rate increases. Furthermore, optimized parameters of PECVD for growing the film with smooth surface were obtained to be Sill4：25 sccm （standard cubic centimeters per minute）, At： 275 sccm, 10%PH3/N2：2 sccm, HF power： 15 W, pressure： 0.9 Torr and temperature： 350℃. In addition, for in thick fihn deposition on silicon substrate, a N20 and NH3 preprocessing method is proposed to suppress the formation of gas bubbles.

关键词： hydrogenated amorphous silicon film surface roughness plasma enhancedchemical vapor deposition

Hybrid device for acoustic noise reduction and energy harvesting based on a silicon micro-perforated panel structure

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Chinese Physics B 2014年第4期23卷 351-357页

作者：吴少华杜利东孔德义平皓月方震赵湛 state key laboratory of transducer technology Institute of Electronics Chinese Academy of Sciences state key laboratory of transducer technology Institute of Intelligent Machines Chinese Academy of Sciences University of Chinese Academy of Sciences

A kind of hybrid device for acoustic noise reduction and vibration energy harvesting based on the silicon micro- perforated panel （MPP） resonant structure is investigated in the article. The critical parts of the device include MPP and energy harvesting membranes. They are all fabricated by means of silicon micro-electro-mechanical systems （MEMS） tech- nology. The silicon MPP has dense and accurate micro-holes. This noise reduction structure has the advantages of wide band and higher absorption coefficients. The vibration energy harvesting part is formed by square piezoelectric membranes arranged in rows. ZnO material is used as it has a good compatibility with the fabrication process. The MPP, piezo- electric membranes, and metal bracket are assembled into a hybrid device with multifunctions. The device exhibits good performances of acoustic noise absorption and acoustic-electric conversion. Its maximum open circuit voltage achieves 69.41 mV.

关键词： hybrid device noise energy harvesting acoustic noise reduction silicon micro-perforated panel

Dependence of wet etch rate on deposition,annealing conditions and etchants for PECVD silicon nitride film

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Journal of Semiconductors 2009年第9期30卷 151-154页

作者：唐龙娟朱银芳杨晋玲李艳周威解婧刘云飞杨富华 Institute of Semiconductors Chinese Academy of Sciences state key laboratory of transducer technology

The influence of deposition, annealing conditions, and etchants on the wet etch rate of plasma enhanced chemical vapor deposition （PECVD） silicon nitride thin film is studied. The deposition source gas flow rate and annealing temperature were varied to decrease the etch rate of SiNx：H by HF solution. A low etch rate was achieved by increasing the SiH4 gas flow rate or annealing temperature, or decreasing the NH3 and N2 gas flow rate. Concentrated, buffered, and dilute hydrofluoric acid were utilized as etchants for Sit2 and SiNx：H. A high etching selectivity of Sit2 over SiNx：H was obtained using highly concentrated buffered HE

关键词： plasma enhanced chemical vapor deposition silicon nitride HF solution etch rate

Biosensors and Biochips Based on BioMEMS and Nanotechnology

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稀有金属材料与工程 2006年第A03期35卷 15-16页

作者： Xinxia Cai Dafu Cui （state key lab of transducer technology Institute of Electronics Chinese Academy of Sciences Beijing 100080 China）

In the past two decades,the biological and medical fields have seen great advances in the development of biosensors and bioehips capable of characterizing and quantifying *** lecture is meant to discuss the development and applications of advanced electroanalysis,biophotonics,nanotechnology,MEMS- based biosensors and biochips for biomedical diagnostics and physical performances of athlete.

关键词： MEMS biosensors biochips nanotechnology

Stress and resistivity controls on in situ boron doped LPCVD polysilicon films for high-Q MEMS applications

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Journal of Semiconductors 2009年第8期30卷 34-38页

作者：解婧刘云飞杨晋玲唐龙娟杨富华 Institute of Semiconductors Chinese Academy of Sciences state key laboratory of transducer technology

The simultaneous control of residual stress and resistivity of polysilicon thin films by adjusting the deposition parameters and annealing conditions is studied. In situ boron doped polysilicon thin films deposited at 520 ℃ by low pressure chemical vapor deposition （LPCVD） are amorphous with relatively large compressive residual stress and high resistivity. Annealing the amorphous films in a temperature range of 600-800 ℃ gives polysilicon films nearly zero-stress and relatively low resistivity. The low residual stress and low resistivity make the polysilicon films attractive for potential applications in micro-electro-mechanical-systems （MEMS） devices, especially in high resonance frequency （high-f） and high quality factor （high-Q） MEMS resonators. In addition, polysilicon thin films deposited at 570 ℃ and those without the post annealing process have low resistivities of 2-5 mΩ·cm. These reported approaches avoid the high temperature annealing process （〉 1000 ℃）, and the promising properties of these films make them suitable for high-Q and high-f MEMS devices.

关键词： low pressure chemical vapor deposition polysilicon residual stress film resistivity annealing micro-electromechanical systems

Preparation of Sn-Ag-In ternary solder bumps by electroplating in sequence and reliability

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Journal of Semiconductors 2011年第8期32卷 27-32页

作者：王栋良袁媛罗乐 state key laboratory of transducer technology Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Graduate of University Chinese Academy of Sciences state key laboratory of transducer technology Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences

This paper describes a technique that can obtain ternary Sn-Ag-In solder bumps with fine pitch and homogenous composition *** main feature of this process is that tin-silver and indium are electroplated on copper under bump metallization（UBM） in *** an accurate reflow process,Sn_（1.8）Ag_（9.4）In solder bumps are *** is found that the intermetallic compounds（IMCs） between Sn-Ag-In solder and Cu grow with the reflow time,which results in an increase in Ag concentration in the solder *** during solidification, more Ag_2In nucleates and strengthens the solder.

关键词： Sn-Ag-In solder bumps electroplating microstructure shear strength

A Micro Amperometric Immunosensor Based on MEMS

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稀有金属材料与工程 2006年第A03期35卷 339-341页

作者： Chao Bian Yuanyuan Xu Hongguang Sun Shaofeng Chen Shanhong Xia state key lab of transducer technology Institute of Electronics Chinese Academy of Sciences Beijing 100080 China

A micro amperometric immunosensor with the sensitive area of only 1mm^2 was fabricated on silicon using the technique of Micro-Electro-Mechanical Systems (MEMS).A double exposure of SU-8 photoresist process was developed to create both the sensitive pool and reaction *** was immobilized via cross-linking with glutaraldehyde on the sensitive area of the electrode surface,which was electropolymerized with polypyrrole *** immunosensor was characterized by detection of human immunoglobulin G (HIgG).The immunosensor displayed a good linear response to HIgG concentrations between 5ng/ml and 255ng/ml and demonstrated a fast response time of 3 minutes.

关键词： enzyme amperometric immunosensor MEMS polypyrrole IgG

Cantilever with immobilized antibody for liver cancer biomarker detection

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Journal of Semiconductors 2014年第10期35卷 60-65页

作者：王帅鹏王晶晶朱银芳杨晋玲杨富华 Institute of Semiconductors Chinese Academy of Sciences state key laboratory of transducer technology

A novel cantilever array-based bio-sensor was batch-fabricated with IC compatible MEMS technology for precise liver cancer bio-marker detection. A micro-cavity was designed in the free end of the cantilever for local antibody-immobilization, thus the adsorption of the cancer biomarker takes place only in the local region of the cantilever instead of the whole lever, and the effect of adsorption-induced k variation can be dramatically reduced. These structural features offer several advantages： high sensitivity, high throughput, high mass detection accuracy, and a portable system. In addition, an analytical model has been established to eliminate the effect of the adsorption-induced lever stiffness change and has been applied to the precise mass detection of the cancer biomarker AFP; the experimentally detected AFP antigen mass by the sensor （7.6 pg/mL） is quite close to the calculated one （5.5 pg/mL）, two orders of magnitude better than those of the fully antibody-immobilized cantilever sensor. These approaches can promote real applications of the cantilever sensors in cancer diagnosis.

关键词： MEMS cantilever mass detection liver cancer biomarker local reaction adsorption-induced stiffnesschange

Feed-through cancellation of a MEMS filter using the difference method and analysis of the induced notch

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Journal of Semiconductors 2013年第4期34卷 94-99页

作者：韩国威司朝伟宁瑾钟卫威孙国胜赵永梅杨富华 Institute of Semiconductors Chinese Academy of Sciences state key laboratory of transducer technology

This paper presents and analyzes a notch observed in MEMS （micro electric mechanical system） filter characterization using the difference method. The difference method takes advantage of the cancellation of parasitic feed-through, which could potentially obscure the relatively small motional signal and lead to failure in character- ization of the MEMS components. In this paper, typical clamped-clamped beam MEMS filters are fabricated and characterized with the difference method. Using the difference method a better performance is obtained but a notch is induced as a potential problem. Analysis is performed and reveals the mismatch of the two differential excitation signals in measurement circuit contributes to the notch. The relevant circuit design rule is also proposed to avoid the notch in the difference method.

关键词： MEMS filter feed-through cancellation difference method notch