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GeTe_(4) as a Candidate for Phase Change Memory Application

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Chinese Physics Letters 2013年第5期30卷 169-171页

作者： LI Run TANG Shi-Yu BAI Gang YIN Qiao-Nan LAN Xue-Xin XIA Yi-Dong YIN Jiang LIU Zhi-Guo National laboratory of solid state Microstructures and Department of Physics Nanjing UniversityNanjing 210093 National laboratory of solid state Microstructures and Department of Materials Science and Engineering Nanjing UniversityNanjing 210093

GeTe_(4) films are deposited by using a dc magnetron sputtering technique, and its structural, thermal and electrical properties are investigated systematically. The prototypical phase-change memory cells are fabricated by using a focused ion beam and magnetron sputtering techniques. Compared with Ge_(2)Sb_(2)Te_(5), the GeTe_(4) film exhibits a higher crystallization temperature (235℃), better data retention of ten years at 129℃, and larger activation energy (2.94 eV). GeTe4 phase change memory cells with an effective diameter of 1 μm show proper switching speed, low power consumption, and good resistance contrast. The Set and Reset operations are achieved by using a 200-ns 2.0-V pulse and a 30-ns 3.0-V pulse, respectively. The dynamic switching ratio between the OFF and ON states is larger than 1×10^(4).

关键词： resistance operations crystallization

A Charge-Trap Memory Device with a Composition-Modulated Zr-Silicate High-k Dielectric Multilayer Structure

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Chinese Physics Letters 2010年第6期27卷 254-257页

作者： LV Shi-Cheng GE Zhong-Yang ZHOU Yue XU Bo GAO Li-Gang YIN Jiang XIA Yi-Dong LIU Zhi-Guo Department of Physics and National laboratory of solid state Microstructures Nanjing University Nanjing 210093 Department of Materials Science and Engineering and National laboratory of solid state Mierostructures Nanjing University Nanjing 210093

We report a novel charge-trap memory device with a composition-modulated Zr-silicate high-k dielectric mul- tilayer structure prepared by using the pulsed laser deposition technique. The device employs amorphous （ZrO2）0.5（SiO2）0.5 as the tunneling and blocking oxide layers, and ZrO2 nanocrystals as the trapping storage layer. Zr02 nanocrystals are precipitated from the phase separation of （ZrO2）0.5（SiO2）0.2 films annealed at 800℃, and isolated from each other within the amorphous （ZrO2）0.5（SiO2）0.5 matrix. Our charge trapping device shows a memory window of 2.6 V and a stored electron density of 1×10^13/cm2.

关键词： ELECTRIC charge & distribution COMPUTER storage devices MODULATION (Electronics) ZIRCONIUM compounds MULTILAYERED thin films PULSED laser deposition AMORPHOUS substances TUNNELING (Physics) TEMPERATURE effect

Total Ionizing Dose Effect and Failure Mechanism of Digital Signal Processor

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Chinese Journal of Electronics 2021年第5期30卷 986-990页

作者： YU Xin LU Wu LI Xiaolong LIU Mohan WANG Xin SUN Jing GUO Qi Xinjiang Technical Institute of Physics and Chemistry Laboratory of Solid State Radiation Physics

Ionizing radiation effect and failure mechanism of Digital signal processor(DSP) is studied through test-board and automatic test equipment to find the relationship between system function failure and parameter degradation. Static bias is more sensitive than dynamic bias when DSP is tested on-line during radiation. Core current, high-Z leakage current and timing parameter are sensitive to ionizing radiation. No enhanced low-dose-rate sensitivity is found by comparing experiment results under high and low dose rate *** memory interface and Timer are deduced to be the sensitive module by step radiation and analysis basing full parameter test in Verigy 93000. The timing parameter degradation have a strong correlation to these module functions. And the degeneration mechanism is analysed on inverter through Hspice simulation which indicate the leakage circuit caused by radiation can lead a delay to the digital signal propagating. The parasitical capacitance among long connections make it worse to the data transmission around DSP, field programmable gate array and memory. Then an early function failure occurs in test board than Verigy 93000. This work provide support to systematic radiation hardness design and hardness assurance/lot acceptance testing in space applications.

关键词： Verigy 93000 analysis basing full parameter test digital signal propagating radiation effect radiation effects DSP external memory interface leakage currents early function failure leakage circuit test board sensitive module system function failure high dose rate radiation static bias automatic test equipment timing parameter degradation low dose rate radiation field programmable gate array enhanced low-dose-rate sensitivity Digital signal processor degeneration mechanism systematic radiation hardness design radiation hardening (electronics) field programmable gate arrays integrated circuit testing ionizing radiation dynamic bias module functions step radiation digital signal processing chips failure mechanism test-board

Tight-binding electron–phonon coupling and band renormalization in graphene

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Chinese Physics B 2015年第1期24卷 434-439页

作者：张德生康广震李俊 National laboratory of solid state Microstructures Nanjing University Department of Physics Nanjing University

The kink structure in the quasiparticle spectrum of electrons in graphene observed at 200 me V below the Fermi level by angle-resolved photoemission spectroscopy（ARPES） was claimed to be caused by a tight-binding electron–phonon（e–ph） coupling in the previous theoretical studies. However, we numerically find that the e–ph coupling effect in this approach is too weak to account for the ARPES data. The former agreement between this approach and the ARPES data is due to an enlargement of the coupling constant by almost four times.

关键词： graphene electron–phonon interaction kink effective mass-renormalization parameter

Using monochromatic light to measure attenuation length of liquid scintillator solvent LAB

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Nuclear Science and Techniques 2019年第2期30卷 11-18页

作者： Rui Zhang De-Wen Cao Chang-Wei Loh You-Hang Liu Fang-Liang Wu Jia-Liang Zhang Ming Qi National laboratory of solid state Microstructures and School of Physics Nanjing University

Linear alkylbenzene(LAB) will be used as solvent for the liquid scintillator in the central detector of Jiangmen Underground Neutrino Observatory. The sheer size of the detector imposes significant challenges and the necessity to further improve the optical transparency of high-quality LAB. In order to study high optical transparencies, we continuously improve our measurement setup and use monochromatic light to measure the attenuation lengths of LAB samples. Moreover, the effects of organic impurities on LAB samples are studied to understand their interaction mechanisms and further improve the optical transparency of LAB.

关键词： Neutrino detector Linear alkylbenzene Light absorption

Excitation of coherent plasmon modes in a polymer structure with side resonators

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Science China(Information Sciences) 2013年第12期56卷 110-115页

作者： ZHU Cong LIU Hui SHENG Chong GAO Fei WANG Qiang ZHU ShiNing National laboratory of solid state Microstructures and Department of Physics Nanjing University

A plasmonic polymer composed of dumbbell resonator(DBR)molecules was *** DBRs were connected with each other through slits that act as chemical bonds,resulting in a strong exchange current interaction between these *** polymer structure has side atoms connected to the backbone.A TM wave can be coupled into these side atoms,and a coherent plasmon wave can be excited along the polymer *** introduces a resonance peak in the optical transmission *** dispersion property of such a coherent mode agrees well with the theoretical calculation results.

关键词： metamaterial coupling nanostructure fabrication resonance surface plasmon

Flexible Transparent Conductive Films on the Basis of Ag Nanowires:Design and Applications:A Review

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Journal of Materials Science & Technology 2015年第6期31卷 581-588页

作者： Weiwei He Changhui Ye Key laboratory of Materials Physics Institute of Solid State PhysicsChinese Academy of Sciences

Transparent conductive films are used ubiquitously in optoelectronic *** properties of transparent films are extremely important for device performance,and the specifications vary according to types of *** the past few years,various types of transparent conductive films on the basis of nanomaterials have emerged,and among these materials,silver nanowire networks show promising performance and represent a viable alternative to the commonly used,scarce and brittle indium tin *** this paper,the working principle and the design protocol of Ag nanowire network flexible transparent conductive films are reviewed,and the applications of Ag nanowircs transparent conductive film are also briefly *** remarks are provided to propose future research in this field towards real-world applications.

关键词： Ag nanowires Transparent conductive films Touch pa

A Review on Diverse Silver Nanostructures

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Journal of Materials Science & Technology 2010年第6期26卷 487-522页

作者： S.Vongehr National laboratory of solid state Microstructures Department of Materials Science and EngineeringNanjing University

This article reviews recent advances in the utilization of various water based synthesis routes towards the shape-controlled synthesis of silver nanoparticles and microstructures in a diverse range of shapes and sizes from several nanometers to micrometers. A variety of very simple one-pot methods, at times employing com- mercial microwave ovens, inexpensive low power ultrasound cleaners, or two-electrode electro-chemistry, can be surprisingly effective in the controlled synthesis of a wide range of nanostructured products, if only parameters are carefully chosen. Many approaches which are adopted include synthesis of Ag nanostructures with various shapes in solution, doping of Ag nanoparticles on unmodified silica and on/inside carbon spheres, kinetically controlled growth of Ag micro-particles with novel nanostructures on flat substrates, and galvanic replace- ment towards bimetallic Ag-Au dendrites and carbon composites. Characterizations of shape, composition and microstructure are carried out via scanning and transmission electron microscopy, various spectroscopy methods, N2 absorption measurements and suchlike. The involved growth mechanisms are investigated in order to discover new means towards better control. Size, location and shape control, including micro- and nanostructure features, allows tuning the products properties towards desired applications. We focus on the optical properties and catalytic activities, but also the stability of compounds can be an issue of interest.

关键词： Silver Nanostructures Synthesis Thermal stability Surface plasmon resonance Catalysis

Quantum dots-templated growth of strain-relaxed GaN on a c-plane sapphire by radio-frequency molecular beam epitaxy

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Chinese Physics B 2012年第10期21卷 485-490页

作者：郭浩民文龙赵志飞步绍姜李新化王玉琦 Key laboratory of Materials Physics Institute of Solid State PhysicsChinese Academy of Sciences

We investigated the quantum dots-templated growth of a（0001） GaN film on a c-plane sapphire *** growth was carried out in a radio-frequency molecular beam epitaxy *** enlargement and coalescence of grains on the GaN quantum dots template was observed in the atom force microscopy images,as well as the more ideal surface morphology of the GaN epitaxial film on the quantum dots template compared with the one on the AlN *** Ga polarity was confirmed by the reflected high energy electron diffraction patterns and the Raman *** significant strain relaxation in the quantum dots-templated GaN film was calculated based on the Raman spectra and the X-ray rocking ***,the threading dislocation density in the quantum dots-templated film was estimated to be 7.1×107cm-2,which was significantly suppressed compared with that of the AlN-buffered GaN *** roomtemperature Hall measurement showed an electron mobility of up to 1860cm2 /V·s in the two-dimensional electron gas at the interface of the Al 0.25Ga0.75 N/GaN heterojunction.

关键词： Ⅲ-V semiconductor radio-frequency molecular beam epitaxy dislocation