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Journal of semiconductors 2010年第11期31卷 5-8页

作者： Amit Chaudhry J.N.Roy Institute of Engineering and Technology Panjab University solar semiconductor pvt.ltd.

A model has been developed to study the effect of depletion and energy quantization at the poly-silicon /oxide interface on the behavior of a nanometer scale n-MOSFET.A model of inversion charge density,including the inversion layer quantization using the variation approach in the substrate,has also been *** the exact calculations of the polygate potential under the depletion and quantization conditions,a C-V model has been developed. All the results have been compared with the numerical models reported in existing literature and they show good agreement.

关键词： BSIM inversion layers MOS devices quantization poly-depletion poly-quantization

SPICE compatible analytical electron mobility model for biaxial strained-Si-MOSFETs

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Journal of semiconductors 2011年第5期32卷 36-41页

作者： Amit Chaudhry J.N.Roy S.Sangwan UIET Panjab UniversityChandigarhIndia solar Semiconductro pvt.ltd HyderabadIndia

This paper describes an analytical model for bulk electron mobility in strained-Si layers as a function of strain. Phonon scattering, columbic scattering and surface roughness scattering are included to analyze the full mobility model. Analytical explicit calculations of all of the parameters to accurately estimate the electron mobility have been made. The results predict an increase in the electron mobility with the application of biaxial strain as also predicted from the basic theory of strain physics of metal oxide semiconductor （MOS） devices. The results have also been compared with numerically reported results and show good agreement.

关键词： mobility SiGe strained-Si phonon surface roughness columbic

Nanoscale strained-Si MOSFET physics and modeling approaches:a review

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Journal of semiconductors 2010年第10期31卷 19-23页

作者： Amit Chaudhry J.N.Roy Garima Joshi University Institute of Engineering and Technology Panjab University solar semiconductor Private Limited

An attempt has been made to give a detailed review of strained silicon technology. Various device models have been studied that consider the effect of strain on the devices, and comparisons have been drawn. A review of some modeling issues in strained silicon technology has also been outlined. The review indicates that this technology is very much required in nanoscale MOSFETs due to its several potential benefits, and there is a strong need for an analytical model which describes the complete physics of the strain technology.

关键词： mobility SiGe strained-Si technology CAD

High-performance transparent graphene-based antennas

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Science China Technological Sciences 2025年

作者： Chaoye HONG Lusong WEI Weijia WANG Youmei TANG Qinghai ZHU Jiangtao HUANGFU Mingsheng XU College of Integrated Circuits State Key Laboratory of Silicon and Advanced Semiconductor Materials Zhejiang University College of Information Science and Electronic Engineering Zhejiang University

With the continuous development of wireless communication technology, applications in the military, aerospace,and vehicle wireless communication sectors have demanded miniaturized and aesthetically pleasing antennas. Transparent antennas, which combine the advantages of optical and radio-frequency(RF) technologies, have become a popular research topic. However, existing transparent antennas often suffer from complex preparation processes, fragile materials, poor conductivity, and low optical transmittance. Here, we develop hybrid conductive thin films using graphene and silver nanowires,achieving a transmittance of 86% and a sheet resistance of 7.8 Ω/sq with high environmental stability. We demonstrate the suitability of this nanocomposite in two applications: a transparent ultrahigh-frequency RF-identification tag folded dipole antenna and a transparent X-band microwave half-wave dipole antenna. These antennas offer high gain, high radiation efficiency, and small size, indicating that transparent graphene-based antennas have remarkable potential for intelligent information sensor systems.

关键词：

Comparative Study of Energy Quantization Approaches in Nanoscale MOSFETs

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Journal of Electronic Science and Technology 2011年第1期9卷 51-57页

作者： Amit Chaudhry Jatindra Nath Roy University Institute of Engineering and Technology Panjab University solar semiconductor pvt. ltd.

An analytical model has been developed to study inversion layer quantization in the ultra thin oxide MOS （metal oxide semiconductor） structures using variation and triangular well *** modeling of the inversion charge density using the continuous surface potential equations has been *** approximation has been taken to model the inversion layer quantization *** results show that the variation approach describes inversion layer quantization process accurately as it matches well with the BSIM 5 （Berkeley short channel insulated gate field effect transistor model 5） results more closely compared with triangular well approach.

关键词： MOSFET model energy quantization,quantum mechanical effect triangular well.

Spin-orbit coupling effects on the in-plane optical anisotropy of semiconductor quantum wells

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Chinese Physics B 2014年第1期23卷 458-465页

作者：俞命玲陈涌海赖云锋程树英 College of Physics and Information Engineering and Institute of Micro/Nano Devices and Solar Cells Fuzhou University Fuzhou 350108 China Key Labora tory of semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China

We theoretically study the influence of the spin–orbit coupling(SOC) on the in-plane optical anisotropy(IPOA) induced by in-plane uniaxial strain and interface asymmetry in(001) GaAs/AlGaAs quantum wells(QWs) with different well width. It is found that the SOC has more significant impact on the IPOA for the transition of the first valence subband of heavy hole to the first conduction band(1H1E) than that of 1L1E. The reason has been discussed. The IPOA of(001) InGaAs/InP QWs has been measured by reflectance difference spectroscopy, whose amplitude is about one order larger than that of GaAs/AlGaAs QWs. The anisotropic interface potential parameters of InGaAs/InP QWs are also determined. The influence of the SOC effect on the IPOA of InGaAs/InP QWs when the QWs are under tensile, compressive or zero biaxial strain are also investigated in theory. Our results demonstrate that the SOC has significant effect on the IPOA especially for semiconductor QWs with small well width, and therefore cannot be ignored.

关键词： spin–orbit coupling in-plane optical anisotropy InGaAs/InP quantum well GaAs/AlGaAs quantum well

MOCVD外延的（010）β-Ga2O3中原位寄生微结构界面与缺陷形成机制研究

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Science China Materials 2025年

作者：宋先强何云龙王湛陆小力孙静周颖刘洋范佳桐何晓宁郑雪峰马晓华郝跃 State Key Laboratory of Wide-Bandgap semiconductor Devices and Integrated Technology National Engineering Research Center of Wide Band-Gap SemiconductorSchool of MicroelectronicsXidian University School of Electronic Engineering Xi'an University of Posts&Telecommunications Guangzhou Institute of Technology Xidian University Shaanxi semiconductor Industry Association

在本文中,我们在MOCVD外延生长的（010） β-Ga2O3薄膜中的界面缺陷形貌结构及形成机理进行了系统分析.通过观测发现了一种丘状表面缺陷,该缺陷呈多边形,并沿[001]方向呈现出脊状凸起.透射电子显微（TEM）微观分析表明,多边形丘状缺陷...

在本文中,我们在MOCVD外延生长的（010） β-Ga2O3薄膜中的界面缺陷形貌结构及形成机理进行了系统分析.通过观测发现了一种丘状表面缺陷,该缺陷呈多边形,并沿[001]方向呈现出脊状凸起.透射电子显微（TEM）微观分析表明,多边形丘状缺陷由孪晶组成,呈倒金字塔形嵌入外延层中,并沿[100]晶向具有二重旋转对称性.缺陷晶格与完美晶格之间的边界呈带状,伴随复杂的位错结构,其孪晶区与基体的结构关系被确定为[001]Matrix||[010]Defect和{-310}Matrix||{-201}Defect.（010）β-Ga2O3同质外延层中的表面缺陷成因不仅与衬底缺陷有关,还受到外延工艺条件的影响.最后,我们通过EDX分析和实验证实,缺陷的形成可能主要归因于生长过程中镓原子和/或氧空位的局部聚集.该研究为β-Ga2O3外延薄膜中的缺陷机制提供了全新的视角,并为Ga2O3材料外延技术改进以及功率器件性能提升奠定了重要基础.

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Preparation, electronic structure, and photoluminescent properties of Eu^(2+) activated BaSi_2O_5 powder phosphors for solid-state lighting

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Journal of semiconductors 2015年第12期36卷 68-73页

作者：曹东华王惠魏红军杨伟强 Jingao solar Holdings Co. Ltd

The green-emitting phosphor BaSi2O5 ：Eu^2＋ was synthesized by the conventional solid state reaction. Using the CASTEP code, BaSi2O5 is calculated to be an intermediate band gap semiconductor with an indirect energy gap of about 3.2 eV. As expected, the calculated optical band gap of BaSi2O5 is lower compared to the experimentally determined values. Eu^2＋-activated BaSi2O5 phosphor can be excited efficiently over a broad spectral range between 200 and 400 nm, and has an emission peak at 500 nm with a full width at half maximum of 95 nm. The study of concentration-dependent emission intensity shows the optimal concentration of the Eu^2＋ is 0.05 mol, and that concentration quenching occurs when the Eu^2＋ content is beyond the critical value. The external quantum efficiency of the optimized BaSi2O5 ：Eu^2＋ is 96. 1%, 70.2% and 62.1% under excitation at 315,350 and 365 nm, respectively. The superior optical properties of the sample show the potential as an ultraviolet converting green-emitting phosphor for white light emitting diodes.

关键词： light emitting diode the green-emitting phosphor BaSi2O5 Eu^2+

1.56 kV/30 A vertical β-Ga2O3 Schottky barrier diodes with composite edge terminations

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Science China(Information Sciences) 2025年

作者： Yitao FENG Hong ZHOU Sami ALGHAMDI Hao FANG Xiaorong ZHANG Yanbo CHEN Guotao TIAN Saud WASLY Yue HAO Jincheng ZHANG Key Lab of Wide Band Gap semiconductor Materials and Devices School of MicroelectronicsXidian University Center of Excellence in Intelligent Engineering Systems (CEIES) King Abdulaziz University China Resources Microelectronics Limited(Wuxi)

In recent years, large-area wide-bandgap (WBG) semiconductor materials have achieved numerous notable breakthroughs [1, 2]. The ultra-WBG semiconductor β-Ga2O3,with its excellent material properties, is ideally suited for the fabrication of power devices. Moreover, it offers easily obtainable large-area substrates, with reported sizes up to 6 inches, produced through melt-grown crystal growth methods. These characteristics make β-Ga2O3 highly attractive for future low-cost commercialization. Despite these advances, most research has focused on low-current and small-size diodes, with few studies addressing high-current and large-size diodes.

关键词：

A Novel semiconductor CIGS Photovoltaic Material and Thin-Film ED Technology

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Journal of semiconductors 2001年第11期22卷 1357-1363页

作者： ZHENG Guang fu 1,YANG Hong xing 1,MAN Cheuk ho 1,WONG Wing lok 2, AN Da wei 1 and John BURNETT 1(1 Centre for Development of solar Energy Technology,Department of Building Services Engineering, The Hong Kong Polytechnic University,Hong Kong,C 香港工业大学香港 Hong Kong solar Tech Centre Mosum Investment Ltd 香港

In order to achieve low cost high efficiency thin film solar cells,a novel semiconductor Photovoltaic (PV) active material CuIn 1-x Ga x Se 2 (CIGS) and thin film Electro Deposition (ED) technology is ***,the PV materials and technologies is investigated,then the detailed experimental processes of CIGS/Mo/glass structure by using the novel ED technology and the results are *** results shows that high quality CIGS polycrystalline thin films can be obtained by the ED method,in which the polycrystalline CIGS is definitely identified by the (112),(204,220) characteristic peaks of the tetragonal structure,the continuous CIGS thin film layers with particle average size of about 2μm of length and around 1 6μm of *** thickness and solar grade quality of CIGS thin films can be produced with good *** and analysis on the ED technique,CIGS energy band and sodium (Na) impurity properties,were also *** alloy CIGS exhibits not only increasing band gap with increasing x ,but also a change in material properties that is relevant to the device *** beneficial impurity Na originating from the low cost soda lime glass substrate becomes one prerequisite for high quality CIGS *** novel material and technology are very useful for low cost high efficiency thin film solar cells and other devices.

关键词：半导体光电材料薄膜 ED技术