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Through-polymer,via technology-enabled,flexible,lightweight,and integrated devices for implantable neural probes

Microsystems & Nanoengineering 2024年第2期10卷 279-291页

作者： Cunkai Zhou Ye Tian Gen Li Yifei Ye Lusha Gao Jiazhi Li Ziwei Liu Haoyang Su Yunxiao Lu Meng Li Zhitao Zhou Xiaoling Wei Lunming Qin Tiger H.Tao Liuyang Sun College of Electronics and Information engineering Shanghai University of Electric PowerShanghaiChina 2020 X-Lab Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghaiChina School of Graduate Study University of Chinese Academy of SciencesBeijingChina State Key Laboratory of Transducer technology Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghaiChina center of Materials Science and Optoelectronics engineering University of Chinese Academy of SciencesBeijingChina School of Physical Science and technology ShanghaiTech UniversityShanghaiChina center for Excellence in Brain Science and Intelligence technology Chinese Academy of SciencesShanghaiChina Neuroxess Co. Ltd.(Jiangxi)NanchangJiangxiChina Guangdong Institute of Intelligence Science and technology HengqinZhuhaiGuangdongChina Tianqiao and Chrissy Chen Institute for Translational research ShanghaiChina

In implantable electrophysiological recording systems,the headstage typically comprises neural probes that interface with brain tissue and integrated circuit chips for signal *** advancements in MEMS and CMOS technology have significantly improved these components,their interconnection still relies on conventional printed circuit boards and sophisticated *** conventional approach adds considerable weight and volume to the package,especially for high channel count *** address this issue,we developed a through-polymer via(TPV)method inspired by the through-silicon via(TSV)technique in advanced three-dimensional *** innovation enables the vertical integration of flexible probes,amplifier chips,and PCBs,realizing a flexible,lightweight,and integrated device(FLID).The total weight of the FLIDis only 25%that of its conventional counterparts relying on adapters,which significantly increased the activity levels of animals wearing the FLIDs to nearly match the levels of control animals without ***,by incorporating a platinum-iridium alloy as the top layer material for electrical contact,the FLID realizes exceptional electrical performance,enabling in vivo measurements of both local field potentials and individual neuron action *** findings showcase the potential of FLIDs in scaling up implantable neural recording systems and mark a significant advancement in the field of neurotechnology.

关键词： alloy neural recording

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Nanoindentation behavior and creep-induced cracking of long-term crept austenitic steel at 650℃

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Journal of Iron and Steel research(International) 2024年第2期31卷 464-474页

作者： Zhen Zhang Yu-hang Duan Shuai Wang Jin-shan Chen An-zhe Wang Xiang-yang Mao Yuan-ji Shi Jie Zhang Ming Liu Zheng-fei Hu School of Materials Science and engineering Nanjing Institute of TechnologyNanjing211167JiangsuChina Jiangsu Key Laboratory of Advanced Structural Materials and Application technology Nanjing211167JiangsuChina Jiangsu Wind power engineering technology center Nanjing210023JiangsuChina Nanjing Vocational University of Industry technology Nanjing210023JiangsuChina Baoshan Iron&Steel Co. Ltd.Shanghai201900China Fujian Provincial Key Laboratory of Terahertz Functional devices and Intelligent Sensing School of Mechanical Engineering and AutomationFuzhou UniversityFuzhou350116FujianChina School of Materials Science and engineering Tongji UniversityShanghai201804China

The grain boundary(GB)damage of long-term crept HR3C(25Cr–20Ni–Nb–N)austenitic steel with solid solution state was investigated by nanoindentation test accompanied with in-situ electron back-scattered *** corresponding microstructure was characterized by scanning electron microscopy and transmission electron *** show that the increase in nanoindentation hardness at the GBs and triple grain junctions may be related to the dislocation accumulation and carbide growth during the *** M23C6 and dislocations piling-up at the GB accelerate the nucleation and coalescence of creep cavity along the *** nanoindentation hardness in grains varies with orientation of the stress *** orientation difference of neighbor grains may induce local high geometrically necessary dislocation densities and strain gradients near the GB,consequently causing stress concentration and subsequent crack growth at specific GBs.

关键词： Austenitic steel Creep Nanoindentation Grain orientation Creep-induced cracking

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Ultrafast optical modulation of the fluorescence from a single-photon emitter in silicon carbide

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Photonics research 2024年第5期12卷 941-946页

作者： MENGTING HE YUJING CAO JUNJIE LIN ZHIPING JU BOTAO WU E WU State Key Laboratory of Precision Spectroscopy East China Normal UniversityShanghai 200241China Photon technology(Zhejiang)Co. Ltd.Jiaxing 314100China National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200000China Department of Physics and shanghai Key Laboratory for Magnetic Resonance East China Normal UniversityShanghai 200241China Chongqing Key Laboratory of Precision Optics Chongqing Institute of East China Normal UniversityChongqing 401120China Collaborative Innovation center of Extreme Optics Shanxi UniversityTaiyuan 030006China

The quest for the room-temperature optical transistor based on nonlinearities in single atoms or molecules is attracting a lot of *** this work,a single-photon emitter in cubic silicon carbide is verified that can operate as an optical switch at room temperature under pulsed green laser illumination with a near-infrared pulsed laser as the control *** demonstrated an ultrafast and reversible optical modulation with a high photoluminescence intensity suppression ratio up to 97.9%and a response time as short as 287.9±5.7 *** current development provides insights for high-precision and ultrafast optical switches,with possibilities for integration with emerging electronic installations to realize more intelligent photoelectric integrated devices.

关键词： emitter carbide photon

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Anisotropic etching mechanisms of 4H-SiC:Experimental and first-principles insights

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Journal of Semiconductors 2024年第1期45卷 42-47页

作者： Guang Yang Lingbo Xu Can Cui Xiaodong Pi Deren Yang Rong Wang Key Laboratory of Optical Field Manipulation of Zhejiang Province Department of PhysicsZhejiang Sci-Tech UniversityHangzhou 310018China State Key Laboratory of silicon and Advanced Semiconductor Materials&School of Materials Science and engineering Zhejiang UniversityHangzhou 310027China Institute of Advanced Semiconductors&Zhejiang Provincial Key Laboratory of power Semiconductor Materials and devices HangzhoIun novation CenterZhejiang UniversityHangzhou 311200China

Molten-alkali etching has been widely used to reveal dislocations in 4H silicon carbide(4H-SiC),which has promoted the identification and statistics of dislocation density in 4H-SiC single ***,the etching mechanism of 4H-SiC is limited *** this letter,we reveal the anisotropic etching mechanism of the Si face and C face of 4H-SiC by combining molten-KOH etching,X-ray photoelectron spectroscopy(XPS)and first-principles *** activation energies for the molten-KOH etching of the C face and Si face of 4H-SiC are calculated to be 25.09 and 35.75 kcal/mol,*** molten-KOH etching rate of the C face is higher than the Si *** XPS analysis and first-principles calculations,we find that the molten-KOH etching of 4H-SiC is proceeded by the cycling of the oxidation of 4H-SiC by the dissolved oxygen and the removal of oxides by molten *** faster etching rate of the C face is caused by the fact that the oxides on the C face are unstable,and easier to be removed with molten alkali,rather than the C face being easier to be oxidized.

关键词： principles alkali etching

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Prognostics of radiation power degradation lifetime for ultraviolet light-emitting diodes using stochastic data-driven models

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能源与人工智能(英文) 2021年第2期4卷 91-100页

作者： Jiajie Fan Zhou Jing Yixing Cao Mesfin Seid Ibrahim Min Li Xuejun Fan Guoqi Zhang Institute of Future Lighting Academy for Engineering&TechnologyFudan UniversityShanghai 200433China shanghai research center for silicon carbide power devices engineering&technology Fudan UniversityShanghai 200433China College of Mechanical and Electrical engineering Hohai UniversityChangzhou 213022China EEMCS Faculty Delft University of TechnologyDelft 2628the Netherlands Changzhou Institute of technology research for Solid State Lighting Changzhou 213161China Department of Industrial and System engineering The Hong Kong Polytechnic UniversityHung HomHong Kong Department of Mechanical engineering Lamar UniversityBeaumontTX 77710USA

With their advantages of high efficiency,long lifetime,compact size and being free of mercury,ultraviolet light-emitting diodes(UV LEDs)are widely applied in disinfection and purification,photolithography,curing and biomedical ***,it is challenging to assess the reliability of UV LEDs based on the traditional life test or even the accelerated life *** this paper,radiation power degradation modeling is proposed to estimate the lifetime of UV LEDs under both constant stress and step stress degradation *** data-driven predic-tions with both Gamma process and Wiener process methods are implemented,and the degradation mechanisms occurring under different aging conditions are also *** results show that,compared to least squares regression in the IESNA TM-21 industry standard recommended by the Illuminating engineering Society of North America(IESNA),the proposed stochastic data-driven methods can predict the lifetime with high accuracy and narrow confidence intervals,which confirms that they provide more reliable information than the IESNA TM-21 standard with greater robustness.

关键词： Ultraviolet light-emitting diodes(UV LEDs) Degradation modeling Gamma process Wiener process IESNA TM-21

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Si-substrate vertical-structure InGaN/GaN micro-LED-based photodetector for beyond 10 Gbps visible light communication

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Photonics research 2022年第10期10卷 2394-2404页

作者： JIANYANG SHI ZENGYI XU WENQING NIU DONG LI XIAOMING WU ZIWEI LI JUNWEN ZHANG CHAO SHEN GUANGXU WANG XIAOLAN WANG JIANLI ZHANG FENGYI JIANG SHAOHUA YU NAN CHI Key Laboratory for Information Science of Electromagnetic Waves(MoE) Fudan UniversityShanghai 200433China shanghai engineering research center of Low-Earth-Orbit Satellite Communication and Applications Shanghai 200433China shanghai Collaborative Innovation center of Low-Earth-Orbit Satellite Communication technology Shanghai 200433China National Institute of LED on silicon Substrate Nanchang UniversityNanchang 330096China Peng Cheng Laboratory Shenzhen 518055China

Visible light communication(VLC)has emerged as a promising communication method in ***,the development of receiving devices is much slower than that of transmitting devices,limited by materials,structures,and *** this paper,we propose and fabricate an InGaN/GaN multiple-quantum-well-based vertical-structure micro-LED-based photodetector(μPD)on a Si substrate.A comprehensive comparison of the photoelectrical performance and communication performance of three sizes ofμPDs,10,50,and 100μm,is *** peak responsivity of all threeμPDs is achieved at 400 nm,while the passband full-widths at half maxima are 87,72,and 78 nm for 10,50,and 100μmμPDs,***−20 dB cutoff bandwidth is up to 822 MHz for 50μmμPD.A data rate of 10.14 Gbps is experimentally demonstrated by bit and power loading discrete multitone modulation and the proposed digital pre-equalizer algorithm over 1 m free space utilizing the self-designed 4×450μmμPD array as a receiver and a 450 nm laser diode as a *** is the first time a more than 10 Gbps VLC system has been achieved utilizing a GaN-based micro-PD,to the best of our *** investigation fully demonstrates the superiority of Si substrates and vertical structures in InGaN/GaNμPDs and shows its great potential for high-speed VLC links beyond 10 Gbps.

关键词： communication beyond utilizing

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High-Throughput Powder Diffraction Using White X-Ray Beam and a Simulated Energy-Dispersive Array Detector

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engineering 2022年第3期8卷 81-88页

作者： Xiaoping Wang Weiwei Dong Peng Zhang Haoqi Tang Lanting Zhang Tieying Yang Peng Liu Hong Wang X.-D.Xiang Materials Genome Initiative center&School of Materials Science and engineering Shanghai Jiao Tong UniversityShanghai 200240China Institute of High Energy Physics Chinese Academy of SciencesBeijing 100049China Academy for Advanced Interdisciplinary Studies Southern University of Science and TechnologyShenzhen 518055China Department of Materials Science and engineering&Department of Physics Southern University of Science and TechnologyShenzhen 518055China shanghai Advanced research Institute Chinese Academy of SciencesShanghai 201204China Guangdong Provincial Key Laboratory of Energy Materials for Electric power Southern University of Science and TechnologyShenzhen 518055China Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and devices Southern University of Science and TechnologyShenzhen 518055China

High-throughput powder X-ray diffraction(XRD)with white X-ray beam and an energy-dispersive detector array is demonstrated in this work on a CeO;powder sample on a bending magnet synchrotron beamline at the shanghai Synchrotron Radiation Facility(SSRF),using a simulated energy-dispersive array detector consisting of a spatially scanning silicon-drift detector(SDD).Careful analysis and corrections are applied to account for various experimental hardware-related and diffraction angle-related *** resulting diffraction patterns show that the relative strength between different diffraction peaks from energy-dispersive XRD(EDXRD)spectra is consistent with that from angle-resolved XRD(ARXRD),which is necessary for analyzing crystal structures for unknown *** X-ray fluorescence(XRF)signal is collected *** counts from all pixels are integrated directly by energy,while the diffraction spectra are integrated by d-spacing,resulting in a much improved peak strength and signal-to-noise(S/N)ratio for the array *** comparison with ARXRD,the diffraction signal generated by a white X-ray beam over monochromic light under the experimental conditions is about 104 times *** full width at half maximum(FWHM)of the peaks in q-space is found to be dependent on the energy resolution of the detector,the angle span of the detector,and the diffraction *** is possible for EDXRD to achieve the same or even smaller FWHM as ARXRD under the energy resolution of the current detector if the experimental parameters are properly chosen.

关键词： High-throughput experiment White beam X-ray diffraction Energy-dispersive array detector Energy-dispersive X-ray diffraction Angle-resolved X-ray diffraction

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Repelling effects of Mg on diffusion of He atoms towards surface in SiC: Irradiation and annealing experiments combined with first-principles calculations

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Journal of Advanced Ceramics 2023年第12期12卷 2284-2299页

作者： Min Liu Qiqi Li Jun Hui Yongfeng Yan Renduo Liu Biao Wang Sino-French Institute of Nuclear engineering and technology Sun Yat-sen UniversityZhuhai 519082China School of Materials Science and engineering Dongguan University of TechnologyDongguan 523000China shanghai Institute of Applied Physics Chinese Academy of SciencesShanghai 201800China

In this study,the effects of Mg on the formation of He bubbles and diffusion behavior of He atoms in cubic silicon carbide(3C–SiC)were investigated by irradiation and annealing experiments as well as first-principles *** results indicated that two damage bands were formed in He&Mg irradiated *** annealing,Mg could prevent He atoms from diffusing to the surface,resulting in the formation of the He bubbles in the deeper areas far from Mg-implanted regions,which is helpful in avoiding surface ***-principles calculations were then performed to explore the effects of Mg on the He behavior in *** solution energy,binding energy charge density,bond length,and crystal orbital Hamiltonian population of these elements were calculated to identify their *** results suggested that the binding capacity between He and Mg was weak,and Mg could increase the diffusion energy barrier of *** initio molecular dynamics(AIMD)simulation showed that Mg could make He in a high-energy unstable state,and force He atom to move toward the vacancy away from Mg,which explains the experimental results.

关键词： SiC irradiation He bubbles Mg ab initio molecular dynamics(AIMD)

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Enhancing photostability and power conversion efficiency of organic solar cells by a “sunscreen” ternary strategy

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Science China Chemistry 2023年第4期66卷 1179-1189页

作者： Yongjie Cui Zeng Chen Peipei Zhu Wei Ma Haiming Zhu Xunfan Liao Yiwang Chen State Key Laboratory for Modification of Chemical Fibers and Polymer Materials&College of Materials Science and engineering Donghua UniversityShanghai 201620China National engineering research center for Carbohydrate Synthesis/Key Lab of Fluorine and silicon for Energy Materials and Chemistry of Ministry of Education Jiangxi Normal UniversityNanchang 330022China center for Chemistry of High-Performance and Novel Materials Department of ChemistryZhejiang UniversityHangzhou 310027China State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong UniversityXi'an 710049China

The field has witnessed the rapid growth in the power conversion efficiency(PCE)of organic solar cells(OSCs)over the past decade,reaching the threshold for practical ***,a major issue remains that OSC lifetimes are seriously limited by the ultraviolet(UV)-induced ***,inspired by the superior photostability of car paint under sunlight and ambient air,a“sunscreen”molecule,2-(2-hydroxy-5-tert-octylphenyl)benzotriazole(UV329),is used to construct the PM6:Y6 ternary *** addition of UV329 mainly enhances the ordered stacking of PM6 and increases the light utilization of blend films with the improved crystallization and appropriate phase ***,the ternary device exhibits stronger light response and obviously higher and more balanced carrier mobilities,contributing to higher short-circuit current density,fill factor and *** PCE boost is also verified in PM6:BTP-e C9 and PM6:L8-BO *** photodegradation of PM6 dominates the photo-degradation process of PM6:Y6 systems,while the UV329 can effectively suppress such degradation,and thus the ternary device can retain nearly 90%of the initial PCE under continuous illumination for 120 ***,ternary devices also preserve better thermal stability and shelf-life with the enhanced *** work provides a simple yet effective strategy for simultaneously improving PCE and photostability of OSCs.

关键词： ternary strategy sunscreen UV absorber photostability organic solar cells

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Ultrahigh rate capability of 1D/2D polyaniline/titanium carbide(MXene)nanohybrid for advanced asymmetric supercapacitors

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Nano research 2022年第1期15卷 285-295页

作者： Jinhua Zhou Qi Kang Shuchi Xu Xiaoge Li Cong Liu Lu Ni Ningna Chen Chunliang Lu Xizhang Wang Luming Peng Xuefeng Guo Weiping Ding Wenhua Hou Key Laboratory of Mesoscopic Chemistry of MOE School of Chemistry and Chemical EngineeringNanjing UniversityNanjing 210023China Department of Polymer Science and engineering Shanghai Key Laboratory of Electrical Insulation and Thermal AgingShanghai Jiao Tong UniversityShanghai 200240China Analytical Testing center Yangzhou UniversityYangzhou 225009China

High energy density and enhanced rate capability are highly sought-after for supercapacitors in today's mobile *** this work,polyaniline/titanium carbide(MXene)(PANI/Ti3C2Tx)nanohybrid is synthesized through a facile and cost-effective self-assembly ***-dimensional(10)PANI nanofibers and two-dimensional(20)Ti3C2Tx ***!Ti3C2Tx delivers greatly improved specific capacitance,ultrahigh rate capability(67%capacitance retention from 1 to 100 A·g^(-1))as well as good cycle *** kinetic analysis reveals that PANI/Ti3C2Tx is featured with surface capacitance-dominated process and has a quasi-reversible kinetics at high scan rates,giving rise to an ultrahigh rate *** using PANl!Ti3C2Tx as positive electrode,an 1.8 V aqueous asymmetric supercapacitor(ASC)is successfully assembled,showing a maximum energy density of 50.8 Wh·kg^(-1)·(at 0.9 kW-kg-1)and a power density of 18 kW·kg^(-1)(at 26 Wh·kg^(-1)).Moreover,an 3.0 V organic ASC is also elaborately fabricated,·by using PANI/Ti3C2Tx,achieving an ultrahigh energy density of 67.2 Wh·kg^(-1)(at 1.5 kW·kg^(-1))and a power density of 30 kW·kg^(-1)·(at 26.8 Wh·kg^(-1)).The present work not only improves fundamental understanding of the structure-property relationship towards ultrahigh rate capability electrode materials,but also provides valuable guideline for the rational design of high-performance:energy storage devices with both high energy and power densities.

关键词： MXene polyaniline nanohybrid asymmetric supercapacitor rate capability

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