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Organic heterojunction synaptic device with ultra high recognition rate for neuromorphic computing

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Nano Research 2024年第6期17卷 5614-5620页

作者： Xuemeng Hu Jialin Meng Tianyang Feng Tianyu Wang Hao Zhu Qingqing Sun David Wei Zhang Lin Chen School of Microelectronics State Key Laboratory of Integrated Chips and SystemsFudan UniversityShanghai 200433China National integrated circuit Innovation Center Shanghai 201203China

Traditional computing structures are blocked by the von Neumann bottleneck,and neuromorphic computing devices inspired by the human brain which integrate storage and computation have received more and more ***,a flexible organic device with 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene(C8-BTBT)and 2,9-didecyldinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene(C10-DNTT)heterostructural channel having excellent synaptic behaviors was fabricated on muscovite(MICA)substrate,which has a memory window greater than 20 *** device shows better electrical characteristics than organic field effect transistors with single organic semiconductor ***,the device simulates organism synaptic behaviors successfully,such as paired-pulse facilitation(PPF),long-term potentiation/depression(LTP/LTD)process,and transition from short-term memory(STM)to long-term memory(LTM)by optical and electrical ***,the neuromorphic computing function was verified using the Modified National Institute of Standards and technology(MNIST)pattern recognition,with a recognition rate nearly 100%without *** research proposes a flexible organic heterojunction with the ultra-high recognition rate in MNIST pattern recognition and provides the possibility for future flexible wearable neuromorphic computing devices.

关键词： organic heterojunction neuromorphic computing synapse behaviors optical modulation Modified National Institute of Standards and technology(MNIST)pattern recognition

Single-fundamental-mode cryogenic(3.6 K)850-nm oxideconfined VCSEL

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Journal of Semiconductors 2024年第10期45卷 69-73页

作者： Anjin Liu Chenxi Hao Jingyu Huo Hailong Han Minglu Wang Bao Tang Lingyun Li Lixing You Wanhua Zheng key laboratory of Optoelectronic Materials and Devices Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China shanghai key laboratory of superconductor integrated circuit technology Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Accelink technologies co. LtdWuhan 430205China key laboratory of Solid-State Optoelectronics Information technology Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China

Cryogenic oxide-confined vertical-cavity surface-emitting laser(VCSEL)has promising application in cryogenic optical interconnect for cryogenic *** this paper,we demonstrate a cryogenic 850-nm oxide-confined VCSEL at around 4 *** cryogenic VCSEL with an optical oxide aperture of 6.5μm in diameter can operate in single fundamental mode with a side-mode suppression-ratio of 36 dB at 3.6 K,and the fiber-coupled output power reaches 1 mW at 5 *** small signal modulation measurements at 298 and 292 K show the fabricated VCSEL has the potential to achieve a high modulation bandwidth at cryogenic temperature.

关键词： VCSEL cryogenic temperature cryogenic computing optical interconnect

InGaZnO-based photoelectric synaptic devices for neuromorphic computing

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Journal of Semiconductors 2024年第9期45卷 42-47页

作者： Jieru Song Jialin Meng Tianyu Wang Changjin Wan Hao Zhu Qingqing Sun David Wei Zhang Lin Chen School of Microelectronics State Key Laboratory of Integrated Chips and SystemsFudan UniversityShanghai 200433China School of integrated circuits Shandong UniversityJinan 250100China National integrated circuit Innovation Center Shanghai 201203China School of Electronic Science and Engineering Nanjing UniversityNanjing 210023China Jiashan Fudan Institute Jiashan 314102China

Photoelectric synaptic devices could emulate synaptic behaviors utilizing photoelectric effects and offer promising prospects with their high-speed operation and low crosstalk. In this study, we introduced a novel InGaZnO-based photoelectric memristor. Under both electrical and optical stimulation, the device successfully emulated synaptic characteristics including excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), long-term potentiation (LTP), and long-term depression (LTD). Furthermore, we demonstrated the practical application of our synaptic devices through the recognition of handwritten digits. The devices have successfully shown their ability to modulate synaptic weights effectively through light pulse stimulation, resulting in a recognition accuracy of up to 93.4%. The results illustrated the potential of IGZO-based memristors in neuromorphic computing, particularly their ability to simulate synaptic functionalities and contribute to image recognition tasks.

关键词： InGaZnO artificial synapse neuromorphic computing photoelectric memristor

Qubit Mapping Based on Tabu Search

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Journal of Computer Science & technology 2024年第2期39卷 421-433页

作者：蒋慧邓玉欣徐鸣 shanghai key laboratory of Trustworthy Computing East China Normal UniversityShanghai 200062China

The goal of qubit mapping is to map a logical circuit to a physical device by introducing additional gates as few as possible in an acceptable amount of *** present an effective approach called Tabu Search Based Adjustment(TSA)algorithm to construct the *** consists of two key steps:one is making use of a combined subgraph isomorphism and completion to initialize some candidate mappings,and the other is dynamically modifying the mappings by *** experiments show that,compared with state-of-the-art methods,TSA can generate mappings with a smaller number of additional gates and have better scalability for large-scale circuits.

关键词： quantum computing qubit mapping initial mapping tabu search logical circuit

High-precision X-ray characterization for basic materials in modern high-end integrated circuit

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Journal of Semiconductors 2024年第7期45卷 12-24页

作者： Weiran Zhao Qiuqi Mo Li Zheng Zhongliang Li Xiaowei Zhang Yuehui Yu National key laboratory of Materials for integrated circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China School of Physical Science and technology ShanghaiTech UniversityShanghai 201210China shanghai Synchrotron Radiation Facility Shanghai Advanced Research InstituteChinese Academy of SciencesShanghai 201204China Beijing Synchrotron Radiation Facility Institute of High Energy PhysicsChinese Academy of ScienceBeijing 100049China

Semiconductor materials exemplify humanity's unwavering pursuit of enhanced performance,efficiency,and functionality in electronic *** its early iterations to the advanced variants of today,this field has undergone an extraordinary *** the reliability requirements of integrated circuits continue to increase,the industry is placing greater emphasis on the crystal ***,conducting a range of characterization tests on the crystals has become *** paper will examine the correlation between crystal quality,device performance,and production yield,emphasizing the significance of crystal characterization tests and the important role of high-precision synchrotron radiation X-ray topography characterization in semiconductor ***,we will cover the specific applications of synchrotron radiation characterization in the development of semiconductor materials.

关键词： X-ray topography synchrotron radiation semiconductor materials crystal defects

Two-dimensional materials for future information technology: status and prospects

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Science China(Information Sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI Shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei LIAO Bilu LIU Can LIU Chunsen LIU Guanyu LIU Kaihui LIU Liwei LIU Sheng LIU Yuan LIU Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong WANG Hao WANG Haomin WANG Jialong WANG Junyong WANG Wenhui WANG Xingjun WANG Yeliang WANG Yuwei WANG Zhenyu WANG Yao WE... School of Electronic Science and Engineering Nanjing University School of integrated circuits Interdisciplinary Research Center for Future Intelligent Chips (Chip-X)Nanjing University School of integrated circuit Science and Engineering Nanjing University of Posts and Telecommunications State key laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences School of Physics and key Lab of Quantum Materials and Devices of the Ministry of Education School of Electronic Science & EngineeringSoutheast University College of integrated circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University Suzhou laboratory State key laboratory of integrated Chips and Systems School of MicroelectronicsFudan University Shaoxin laboratory Department of Applied Physics The Hong Kong Polytechnic University key laboratory for Micro-Nano Physics and technology of Hunan Province College of Materials Science and EngineeringHunan University College of integrated circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State key laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National key laboratory of Materials for integrated circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS key laboratory of Nanophotonic Materials and Devices & key laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University key laboratory of Quantum State Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronicdevices optoelectronic devices multi-functional integration

A novel silver-doped nickel oxide hole-selective contact for crystalline silicon heterojunction solar cells

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Frontiers of Chemical Science and Engineering 2024年第2期18卷 93-101页

作者： Junfeng Zhao Xudong Yang Zhongqing Zhang Shengpeng Xie Fangfang Liu Anjun Han Zhengxin Liu Yun Sun Wei Liu key laboratory of Photoelectronic Thin Film Devices and technology of Tianjin Engineering Research Center of Thin Film Photoelectronic TechnologyInstitute of Photoelectronic Thin Film Devices and Technology of Nankai University(Ministry of Education)Tianjin 300350China shanghai Institute of Microsystem and Information technology Chinese Academy of SciencesShanghai 201800China

Based on its band alignment,p-type nickel oxide(NiO_(x))is an excellent candidate material for hole transport layers in crystalline silicon heterojunction solar cells,as it has a smallΔEV and largeΔEC with crystalline ***,to overcome the poor hole selectivity of stoichiometric NiO_(x) due to its low carrier concentration and conductivity,silver-doped nickel oxide(NiO_(x):Ag)hole transport layers with high carrier concentrations were prepared by co-sputtering high-purity silver sheets and pure NiO_(x) *** improved electrical conductivity of NiO_(x) was attributed to the holes generated by the Ag^(+)substituents for Ni^(2+),and moreover,the introduction of Ag^(+)also increased the amount of Ni^(3+)present,both of which increased the carrier concentration in NiO_(x).Ag^(+)doping also reduced the c-Si/NiO_(x) contact resistivity and improved the hole-selective contact with NiO_(x).Furthermore,the problems of particle clusters and interfacial defects on the surfaces of NiO_(x):Ag films were solved by UV-ozone oxidation and high-temperature annealing,which facilitated separation and transport of carriers at the c-Si/NiO_(x) *** constructed c-Si/NiO_(x):Ag solar cell exhibited an increase in open-circuit voltage from 490 to 596 mV and achieved a conversion efficiency of 14.4%.

关键词： band alignment nickel oxide hole transport layer silver-doped nickel oxide UV-ozone

Large circuit models: opportunities and challenges

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Science China(Information Sciences) 2024年第10期67卷 25-66页

作者： Lei CHEN Yiqi CHEN Zhufei CHU Wenji FANG Tsung-Yi HO Ru HUANG Yu HUANG Sadaf KHAN Min LI Xingquan LI Yu LI Yun LIANG Jinwei LIU Yi LIU Yibo LIN Guojie LUO Hongyang PAN Zhengyuan SHI Guangyu SUN Dimitrios TSARAS Runsheng WANG Ziyi WANG Xinming WEI Zhiyao XIE Qiang XU Chenhao XUE Junchi YAN Jun YANG Bei YU Mingxuan YUAN Evangeline F.Y.YOUNG Xuan ZENG Haoyi ZHANG Zuodong ZHANG Yuxiang ZHAO Hui-Ling ZHEN Ziyang ZHENG Binwu ZHU Keren ZHU Sunan ZOU Huawei Noah’s Ark Lab School of integrated circuits Peking University Faculty of Electrical Engineering and Computer Science Ningbo University Department of Electronic and Computer Engineering Hong Kong University of Science and Technology Department of Computer Science and Engineering The Chinese University of Hong Kong School of integrated circuits Southeast University Huawei HiSilicon Peng Cheng laboratory School of Computer Science Peking University School of Microelectronics State Key Laboratory of Integrated Chips and System Fudan University School of Artificial Intelligence Shanghai Jiao Tong University

Within the electronic design automation(EDA) domain, artificial intelligence(AI)-driven solutions have emerged as formidable tools, yet they typically augment rather than redefine existing methodologies. These solutions often repurpose deep learning models from other domains, such as vision, text, and graph analytics, applying them to circuit design without tailoring to the unique complexities of electronic circuits. Such an “AI4EDA” approach falls short of achieving a holistic design synthesis and understanding,overlooking the intricate interplay of electrical, logical, and physical facets of circuit data. This study argues for a paradigm shift from AI4EDA towards AI-rooted EDA from the ground up, integrating AI at the core of the design process. Pivotal to this vision is the development of a multimodal circuit representation learning technique, poised to provide a comprehensive understanding by harmonizing and extracting insights from varied data sources, such as functional specifications, register-transfer level(RTL) designs, circuit netlists,and physical layouts. We champion the creation of large circuit models(LCMs) that are inherently multimodal, crafted to decode and express the rich semantics and structures of circuit data, thus fostering more resilient, efficient, and inventive design methodologies. Embracing this AI-rooted philosophy, we foresee a trajectory that transcends the current innovation plateau in EDA, igniting a profound “shift-left” in electronic design methodology. The envisioned advancements herald not just an evolution of existing EDA tools but a revolution, giving rise to novel instruments of design-tools that promise to radically enhance design productivity and inaugurate a new epoch where the optimization of circuit performance, power, and area(PPA) is achieved not incrementally, but through leaps that redefine the benchmarks of electronic systems' capabilities.

关键词： AI-rooted EDA large circuit models (LCMs) multimodal circuit representation learning circuit optimization

Fermi level tuning in Sn_(1-x)Pb_(x)Te/Pb heterostructure via changing interface roughness

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Science China(Physics,Mechanics & Astronomy) 2024年第8期67卷 118-125页

作者： Tengteng Liu Zhaoxia Yi Bangjin Xie Weiyan Zheng Dandan Guan Shiyong Wang Hao Zheng Canhua Liu Hao Yang Yaoyi Li Jinfeng Jia key laboratory of Artificial Structures and Quantum Control(Ministry of Education) Tsung-Dao Lee InstituteSchool of Physics and AstronomyShanghai Jiao Tong UniversityShanghai 200240China shanghai Research Center for Quantum Sciences Shanghai 201315China Hefei National laboratory Hefei 230088China

Superconducting SnTe-type topological crystalline insulators(TCIs)are predicted to host multiple Majorana zero modes(MZMs)which can coexist in a single *** level(FL)close to the Dirac points of topological surface states is helpful for detecting ***,the TCI SnTe is a heavily p-type semiconductor which is very difficult to modify to n-type via doping or *** this work,we fabricate the atomically flat Sn_(1-x)Pb_(x)Te/Pb heterostructure by molecular beam epitaxy,and make the p-type Sn_(1-x)Pb_(x)Te become n-type through changing the interface *** scanning tunnelling microscope,we find the Dirac points of Sn_(1-x)Pb_(x)Te/Pb heterostructure are always above the FL due to the Fermi level pinning(FLP)induced by topological surface states at atomically flat *** increasing the interface roughness,the FLP effect is suppressed and then the Dirac points of p-type Sn_(1-x)Pb_(x)Te can be tuned very close to or even below the *** work provides a new method for tuning the FL of SnTe-type TCI which has potential application in novel topological superconductor device.

关键词： topological crystalline insulator superconductor heterostructure Fermi level pinning interface roughness