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Artificial optoelectronic synapse based on spatiotemporal irradiation to source-sharing circuitry of synaptic phototransistors

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InfoMat 2024年第2期6卷 131-141页

作者： Seungho Song Changsoon Choi Jongtae Ahn Je-Jun Lee Jisu Jang Byoung-Soo Yu Jung Pyo Hong Yong-Sang Ryu Yong-Hoon Kim Do Kyung Hwang Center for Opto-Electronic Materials and Devices Post-Silicon Semiconductor InstituteKorea Institute of Science and Technology(KIST)SeoulRepublic of Korea School of Advanced Materials Science and Engineering Sungkyunkwan UniversitySuwonRepublic of Korea Center for Spintronics Post-Silicon Semiconductor InstituteKorea Institute of Science and Technology(KIST)SeoulRepublic of Korea division of Nanoscience&Technology KIST SchoolUniversity of Science and Technology(UST)SeoulRepublic of Korea School of Biomedical Engineering Korea UniversitySeoulRepublic of Korea KU-KIST Graduate School of Converging Science and Technology Korea UniversitySeoulRepublic of Korea

To overcome the intrinsic inefficiency of the von Neumann architecture,neuromorphic devices that perform analog vector–matrix multiplication have been highlighted for achieving power-and time-efficient data *** particular,artificial synapses,of which conductance should be programmed to represent the synaptic weights of the artificial neural network,have been intensively researched to realize neuromorphic ***,inspired by excitatory and inhibitory synapses,we develop an artificial optoelectronic synapse that shows both potentiation and depression characteristics triggered only by optical *** design of the artificial optoelectronic synapse,in which excitatory and inhibitory synaptic phototransistors are serially connected,enables these characteristics by spatiotemporally irradiating the phototransistor channels with optical ***,a negative synaptic weight can be realized without the need for electronic components such as *** such attributes,the artificial optoelectronic synapse is demonstrated to classify three digits with a high recognition rate(98.3%)and perform image preprocessing via analog vector-matrix multiplication.

关键词： amorphous oxide semiconductor analog processing artificial synapse neuromorphic optoelectronics

Solar‑Driven Sustainability:Ⅲ–Ⅴsemiconductor for Green Energy Production Technologies

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Nano-Micro Letters 2024年第11期16卷 445-478页

作者： Chandran Bagavath Jeong‑Kyun Oh Sang‑Wook Lee Dae‑Young Um Sung‑Un Kim Veeramuthu Vignesh Jin‑Seo Park Shuo Han Cheul‑Ro Lee Yong‑Ho Ra division of Advanced Materials Engineering Engineering CollegeResearch Center for Advanced Materials Development(RCAMD)Jeonbuk National UniversityJeonju 54896Republic of Korea

Long-term societal prosperity depends on addressing the world’s energy and environmental problems,and photocatalysis has emerged as a viable *** the efficiency of photocatalytic processes is fundamentally achieved by optimizing the effective utilization of solar energy and enhancing the efficient separation of photogenerated *** has been demonstrated that the fabrication ofⅢ–Ⅴsemiconductor-based photocatalysts is effective in increasing solar light absorption,long-term stability,large-scale production and promoting charge *** focused review explores on the current developments inⅢ–Ⅴsemiconductor materials for solar-powered photocatalytic *** review explores on various subjects,including the advancement ofⅢ–Ⅴsemiconductors,photocatalytic mechanisms,and their uses in H2 conversion,CO_(2)reduction,environmental remediation,and photocatalytic oxidation and reduction *** order to design heterostructures,the review delves into basic concepts including solar light absorption and effective charge *** also highlights significant advancements in green energy systems for water splitting,emphasizing the significance of establishing eco-friendly systems for CO_(2)reduction and hydrogen *** main purpose is to produce hydrogen through sustainable and ecologically friendly energy *** review intends to foster the development of greener and more sustainable energy source by encouraging researchers and developers to focus on practical applications and advancements in solar-powered photocatalysis.

关键词： Green energy system Hydrogen evolution CO_(2)reduction Ⅲ-Ⅴsemiconductors Photo electrochemical water splitting

Light People:*** May Lau,newly elected US NAE member in Hong Kong,talks about future of photonics and women in science

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Light(Science & Applications) 2024年第4期13卷 602-608页

作者： Yating Wan Chenzi Guo Electrical and Computer Engineering the ComputerElectrical and Mathematical Sciences and Engineering DivisionKing Abdullah University of Science and Technology23955-6900 ThuwalSaudi Arabia Changchun Institute of Optics Fine Mechanics and PhysicsChinese Academy of SciencesChangchunChina

Editorial Photonics technology remains a driving force in today’s scientific landscape,marked by continuous innovation and crossdisciplinary *** an enlighting conversation with Light:Science&Applications,*** May Lau,a pioneer in photonics research,shares her deep insights on the evolution of technologies of LEDs,lasers,challenges of hetero-epitaxy,and the future of micro-LEDs and quantum dot *** honored as a member of the US National Academy of Engineering(NAE)for her significant contributions to photonics and electronics using III-V semiconductors on silicon,*** stands out as the sole Hong Kong scholar inducted into the NAE this year,joining 114 new and 21 international *** this exclusive Light People interview,*** shares her journey as a pioneering woman in engineering,her commitment to mentorship and academia,and her perspective on advancing female representation in *** summary provided is distilled from ***’s thoughtful responses during the *** a deeper exploration of ***’s experiences and advice,the full interview is available in the Supplementary material.

关键词： interview lighting driving

Synaptic a-Si:H/a-Ga_(2)O_(3) phototransistor inspired by the phototaxis behavior of organisms with all-optical and all-electrical stimulation modes

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Nano Research 2024年第8期17卷 7631-7642页

作者： Youngbin Yoon Youngki Kim Soowon Choi Jungdae Kwon Myunghun Shin School of Electronics and Information Engineering Korea Aerospace UniversityGoyang10540Republic of Korea Nano Materials division Korea Institute of Materials ScienceChangwon 51508Republic of Korea Department of Materials Science and Engineering Pusan National UniversityBusan 46241Republic of Korea

To improve neuromorphic computing performance,neuromorphic system components should mimic the behaviors of organic *** this study,a synaptic a-Si:H/a-Ga_(2)O_(3)phototransistor featuring all-optical and-electrical emulation is fabricated in a manner advantageous for complementary metal-oxide-semiconductor process *** phototransistor exhibits excitatory and inhibitory synaptic behaviors under stimulation by both optical and electrical *** mimics several essential synaptic functions,including excitatory postsynaptic current,inhibitory postsynaptic current,short-term memory,long-term memory,pairedpulse facilitation,and spike-timing-dependent *** optical and electrical modulation mechanisms are confirmed to arise from the a-Si:H/a-Ga_(2)O_(3) heterojunction structure and interface effects,and the device is shown to operate at low power in both optical and electrical *** all-optical weight modulation function is applied to the wavelength-differential behavior response of zebrafish,successfully mimicking the color perception process of the ***,to verify the translation of the optoelectrical-derived synaptic behaviors of the phototransistor into artificial neuromorphic computation,handwritten digit image recognition of the Modified National Institute of Standards and Technology dataset is performed by a convolutional neural network,with a demonstrated average learning accuracy of 98.46%.These findings verify the applicability of the synaptic a-Si:H/a-Ga_(2)O_(3) phototransistor in neuromorphic computing.

关键词： synaptic phototransistor artificial synapse phototaxis neuromorphic computing interface charge state optoelectronic synaptic device

Flexible printed three dimensional(3D) integrated carbon nanotube complementary metal oxide semiconductor(CMOS) thin film transistors and circuits

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Science China(Information Sciences) 2024年第9期67卷 280-293页

作者： Zhaofeng CHEN Jiaqi LI Min LI Hongxuan GUO Jianwen ZHAO SEU-FEI Nano-Pico Center Key Laboratory of MEMS of Ministry of Education Southeast University Printable Electronics Research Center Division of Nanodevices and Related NanomaterialsSuzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences School of Nano Technology and Nano Bionics University of Science and Technology of China

The threshold voltage modulation of carbon nanotube thin-film transistors（TFTs） and flexible three-dimensional（3D） integration circuits has become hot research topics for carbon-based electronics. In this paper, a doping-free gate electrode technology is introduced to significantly modulate the threshold voltage of polymer-sorted semiconducting single-walled carbon nanotube（sc-SWCNT） TFTs in combination with the highly effective gate-controlling ability of solid-state electrolyte thin films as the dielectrics. A systematic investigation was conducted on the impact of printed silver, evaporated silver, and evaporated aluminum（Al） gate electrodes on the threshold voltage of flexible printed bottom-gate and top-gate SWCNT TFTs. The results indicate that the SWCNT TFTs with Al gate electrodes exhibit enhancement-mode characteristics with excellent electrical properties, such as the negative threshold voltages（-0.6 V）, high Ion/Ioff（up to 10～6）, low subthreshold swing(61.4 mV · dec-1), and small hysteresis. It is attributed to either the formation of lower work function thin films（Al2O3） at the electrode/dielectric layer interfaces through the natural oxidation of the Al bottom-gate electrodes or the dipole reaction of the Al top-gate electrodes from X-ray photoelectron spectroscopy（XPS） and ultraviolet photoelectron spectroscopy（UPS） data. In addition, 3D complementary metal-oxide-semiconductor（CMOS） inverters with common gate electrodes were constructed using the resulting enhancement-mode P-type SWCNT TFTs and matched N-type SWCNT TFTs, which shows high voltage gain（34）, rail-to-rail output and high noise margins(80.04%, VDD=-1 V)as well good mechanical flexibility at low operation voltages. It demonstrates that SWCNT TFTs have great advantages for building large-scale 3D flexible integrated circuits.

关键词： three-dimensional CMOS circuits printing technology polymer-sorted semiconducting carbon nanotubes enhancement-mode thin-filmtransistors threshold voltage modulation

Highly Elastic,Bioresorbable Polymeric Materials for Stretchable,Transient Electronic Systems

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Nano-Micro Letters 2024年第6期16卷 1-13页

作者： Jeong‑Woong Shin Dong‑Je Kim Tae‑Min Jang Won Bae Han Joong Hoon Lee Gwan‑Jin Ko Seung Min Yang Kaveti Rajaram Sungkeun Han Heeseok Kang Jun Hyeon Lim Chan‑Hwi Eom Amay J.Bandodkar Hanul Min Suk‑Won Hwang KU‑KIST Graduate School of Converging Science and Technology Korea University145 Anam‑roSeongbuk‑guSeoul 02841Republic of Korea SK Hynix 2091Gyeongchung‑daeroBubal‑eupIcheon‑siGyeonggi‑do 17336Republic of Korea Hanwha Systems Co. Ltd.188Pangyoyeok‑roBundang‑guSeongnam‑siGyeonggi‑do 13524Republic of Korea Department of Electrical and Computer Engineering North Carolina State UniversityRaleighNC 27606USA Center for Advanced Self‑Powered Systems of Integrated Sensors and Technologies(ASSIST) North Carolina State UniversityRaleighNC 27606USA Department of Integrative Energy Engineering Korea University145 Anam‑roSeongbuk‑guSeoul 02841Republic of Korea Biomaterials Research Center Korea Institute of Science and Technology(KIST)5 Hwarang‑ro 14‑gilSeongbuk‑guSeoul 02792Republic of Korea semiconductor R&D Center Samsung Electronics Co.Ltd.Hwaseong‑siGyeonggi‑do 18448Republic of Korea Center for Advanced Biomolecular Recognition Biomedical Research DivisionKorea Institute of Science and Technology(KIST)Seoul 02792Republic of Korea

Substrates or encapsulants in soft and stretchable formats are key components for transient,bioresorbable electronic systems;however,elastomeric polymers with desired mechanical and biochemical properties are very limited compared to nontransient ***,we introduce a bioresorbable elastomer,poly(glycolide-co-ε-caprolactone)(PGCL),that contains excellent material properties including high elongation-at-break(<1300%),resilience and toughness,and tunable dissolution *** of PGCLs as polymer matrices,in combination with conducing polymers,yields stretchable,conductive composites for degradable interconnects,sensors,and actuators,which can reliably function under external *** of device components with wireless modules demonstrates elastic,transient electronic suture system with on-demand drug delivery for rapid recovery of postsurgical wounds in soft,time-dynamic tissues.

关键词： Biodegradable elastomer Conductive polymer composites Biomedical device Transient electronics

Heterogeneous tunable Ⅲ-Ⅴ-on-silicon-nitride mode-locked laser emitting wide optical spectra

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Photonics Research 2024年第3期12卷 I0021-I0027页

作者： MAXIMILIEN BILLET STIJN CUYVERS STIJN POELMAN ARTUR HERMANS SANDEEP SEEMA SASEENDRA TASUKU NAKAMURA SHINYA OKAMOTO YASUHISA INADA KAZUYA HISADA TAKU HIRASAWA JOAN RAMIREZ DELPHINE NÉEL NICOLAS VAISSIÈRE JEAN DECOBERT PHILIPPE SOUSSAN XAVIER ROTTENBERG GUNTHER ROELKENS JONØ.KJELLMAN BART KUYKEN Photonics Research Group Department of Information TechnologyGhent University-imec9052 GhentBelgium imec 3001 LeuvenBelgium Technology division Panasonic Holdings CorporationMoriguchi-CityOsakaJapan Ⅲ-Ⅴ Lab F91767 PalaiseauFrance

We demonstrate a Ⅲ-Ⅴ-on-silicon-nitride mode-locked laser through the heterogeneous integration of a semiconductor optical amplifier on a passive silicon-nitride cavity using the technique of micro-transfer printing. In the initial phase of our study, we focus on optimizing the lasing wavelength to be centered at 1550 nm. This optimization is achieved by conducting experiments with 27 mode-locked lasers, each incorporating optical amplifiers featuring distinct multiple-quantum-well photoluminescence values. Subsequently we present a comprehensive study investigating the behavior of the mode-locking regime when the electrical driving parameters are varied. Specifically, we explore the impact of the gain voltage and saturable absorber current on the locking stability of a tunable mode-locked laser. By manipulating these parameters, we demonstrate the precise control of the optical spectrum across a wide range of wavelengths spanning from 1530 to 1580 nm. Furthermore, we implement an optimization approach based on a Monte Carlo analysis aimed at enhancing the mode overlap within the gain region. This adjustment enables the achievement of a laser emitting a 23-nm-wide spectrum while maintaining a defined 10 dB bandwidth for a pulse repetition rate of 3 GHz.

关键词： tunable amplifier mode

Novel ternary metals-based telluride electrocatalyst with synergistic effects of high valence non-3d metal and oxophilic Te for pH-universal hydrogen evolution reaction

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Journal of Energy Chemistry 2023年第5期80卷 736-743,I0015页

作者： Seunghwan Jo Wenxiang Liu Yanan Yue Ki Hoon Shin Keon Beom Lee Hyeonggeun Choi Bo Hou Jung Inn Sohn division of Physics and semiconductor Science Dongguk UniversitySeoul 04620Republic of Korea School of Power and Mechanical Engineering Wuhan UniversityWuhan 430072HubeiChina School of Physics and Astronomy Cardiff UniversityCardiff CF243AAWalesUK

Electrocatalyst designs based on oxophilic foreign atoms are considered a promising approach for developing efficient pH-universal hydrogen evolution reaction(HER)electrocatalysts by overcoming the sluggish alkaline HER ***,we design ternary transition metals-based nickel telluride(Mo WNi Te)catalysts consisting of high valence non-3d Mo and W metals and oxophilic Te as a first demonstration of non-precious heterogeneous electrocatalysts following the bifunctional *** Mo WNi Te showed excellent HER catalytic performance with overpotentials of 72,125,and 182 mV to reach the current densities of 10,100,and 1000 mA cm^(-2),respectively,and the corresponding Tafel slope of 47,52,and 58 mV dec-1in alkaline media,which is much superior to commercial Pt/***,the HER performance of Mo WNi Te is well maintained up to 3000 h at the current density of 100 mA cm^(-2).It is further demonstrated that the Mo WNi Te exhibits remarkable HER activities with an overpotential of 45 mV(31 mV)and Tafel slope of 60 mV dec-1(34 mV dec-1)at 10 mA cm^(-2)in neutral(acid)*** superior HER performance of Mo WNi Te is attributed to the electronic structure modulation,inducing highly active low valence states by the incorporation of high valence non-3d transition *** is also attributed to the oxophilic effect of Te,accelerating water dissociation kinetics through a bifunctional catalytic mechanism in alkaline *** functional theory calculations further reveal that such synergistic effects lead to reduced free energy for an efficient water dissociation process,resulting in remarkable HER catalytic performances within universal pH environments.

关键词： Telluride catalyst Oxophilic effect High valence non-3d metal Bifunctional mechanism pH-universal hydrogen evolution reaction

Room-temperature continuous-wave InP-based 2.01 μm microcavity lasers in whispering-gallery modes with InGaAsSb quantum well

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Chinese Optics Letters 2023年第4期21卷 65-68页

作者：郭强强张锦川朱怡璇高旭陆全勇卓宁翟慎强刘俊岐王利军刘舒曼刘峰奇 Key Laboratory of semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing Key Laboratory of Low Dimensional Semiconductor Materials and DevicesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China division of Quantum Materials and Devices Beijing Academy of Quantum Information SciencesBeijing 100193China

We demonstrated an electrically pumped InP-based microcavity laser operating in continuous-wave *** active region is designed with antimony surfactants to enhance the gain at 2 μm,and a selective electrical isolation scheme is used to secure continuous-wave operation for the microcavity laser at room *** lasers were fabricated as a notched elliptical resonator,resulting in a highly unidirectional far-field profile with an in-plane beam divergence of less than 2°.Single-mode emission was obtained over the entire dynamic range,and the laser frequencies were tuned linearly with the pumping ***,these directional lasers pave the way for portable and highly integrated on-chip sensing applications.

关键词： whispering-gallery mode continuous-wave operation electrical isolation directional emission