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Defect chemistry for extrinsic doping in ductile semiconductor α-Ag_(2)S

Journal of Materiomics 2024年第6期10卷 1270-1278页

作者： Hexige Wuliji Kunpeng Zhao Huirong Jing Runxin Ouyang Yu Yang Tian-Ran Wei Hong Zhu Xun Shi State Key laboratory of Metal Matrix Composites School of Materials Science and EngineeringShanghai Jiao Tong UniversityShanghai200240China University of Michigan-Shanghai Jiao Tong University Joint Institute Shanghai Jiao Tong UniversityShanghai200240China State Key laboratory of High Performance ceramics and Superfine Microstructure Shanghai Institute of CeramicsChinese Academy of SciencesShanghai200050China

As a new type of inorganic ductile semiconductor,silver sulfide(α-Ag_(2)S)has garnered a plethora of interests in recent years due to its promising applications in flexible ***,the lack of detailed defect calculations and chemical intuition has largely hindered the optimization of material's *** this study,we systematically investigate the defect chemistry of extrinsic doping inα-Ag_(2)S using first-principles *** computationally examine a broad suite of 17 dopants and find that all aliovalent elements have extremely low doping limits(<0.002%)in α-Ag_(2)S,rendering them ineffective in tuning the electron *** contrast,the isovalent elements Se and Te have relatively high doping limits,being consistent with the experimental *** the dopant Se or Te itself does not provide additional electrons,its introduction has a significant impact on the band gap,the band-edge position,and especially the formation energy of Ag interstitials,which effectively improve the electron concentrations by 2–3 orders of *** size effects of Se and Te doping are responsible for the more favorable Ag interstitials in Ag_(2)S_(0.875)Se_(0.125) and Ag_(2)S_(0.875)Te_(0.125) with respect to pristine *** work serves as a theoretical foundation for the rational design of Ag_(2)S-based functional materials.

关键词： Defect chemistry Extrinsic doping Thermoelectric Silver sulfide First-principles

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Editable semiconductor photo-electrodes for sustainable ammonia synthesis

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Nano Research 2024年第4期17卷 3107-3112页

作者： Ning Lan Kun Du Erling Zhao Wei Zhao Tao Ling Key laboratory for Advanced ceramics and Machining Technology of Ministry of Education Institute of New-EnergySchool of Materials Science and EngineeringTianjin UniversityTianjin 300072China School of Materials Science and Engineering Tianjin Chengjian UniversityTianjin 300384China

Powered by an inexhaustible supply of solar energy,photoelectrochemical(PEC)nitrogen reduction reaction(NRR)provides an ideal solution for the synthesis of green ammonia(NH_(3)).Although great efforts have been made in the past decades,there are still significant challenges in increasing the NH_(3) yields of the PEC-NRR *** addition to the issues of low activity and selectivity similar to electrochemical NRR,the progress of PEC-NRR is also impeded by the limited increase in NH_(3) yields as the electrode is ***,we propose an editable electrode design strategy that parallels unit photo-electrodes to achieve a linear increase in NH_(3) yields with electrode active *** demonstrate that the editable electrode design strategy minimizes the electrode charge transfer resistance,allowing more photo-generated carriers to reach the electrode surface and promote the catalytic *** believe that this editable electrode design strategy provides an avenue to achieve sustainable PEC NH_(3) production.

关键词： editable electrode photoelectrochemical nitrogen reduction reaction parallel electrode ZnSe

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Mid-infrared SESAM mode-locked Er:CaF_(2)-SrF_(2)bulk laser at 2.73µm

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Chinese Optics Letters 2024年第5期22卷 85-88页

作者：刘晶晶唐琳萱冯潇玥宗梦雨仝鲁阳张振赵丽娜刘杰苏良碧 Shandong Provincial Engineering and Technical Center of Light Manipulations and Shandong Provincial Key laboratory of Optics and Photonic Device School of Physics and ElectronicsShandong Normal UniversityJinan 250358China CAS Key laboratory of Transparent and Opto-Functional Inorganic Materials Synthetic Single Crystal Research CenterShanghai Institute of CeramicsChinese Academy of SciencesShanghai 201899China State Key laboratory of High Performance ceramics and Superfine Microstructure Shanghai Institute of CeramicsChinese Academy of SciencesShanghai 201899China

To the best of our knowledge,this is the first time that a mid-infrared Er^(3+):CaF_(2)-SrF_(2) laser has achieved continuous-wave mode-locked operation by a semiconductor saturable absorber *** laser emits a maximum output power of 93 mW at 2.73μm with a repetition rate of approximately 69 MHz and demonstrates a high signal-to-noise ratio of around 71 *** addition,a MgF_(2) birefringent plate was utilized to enable wavelength tuning of the Er^(3+):CaF_(2)-SrF_(2) laser,resulting in operation at approximately 2.73μm,2.75μm,2.79μm,and 2.81μ*** results demonstrate that Er^(3+):CaF_(2)-SrF_(2) is a promising alternative for the generation of efficient diode-pumped mode-locked lasers around 2.8μm.

关键词： mid-infrared laser mode-locked laser tunable wavelength

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Advancements in heterojunction,cocatalyst,defect and morphology engineering of semiconductor oxide photocatalysts

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Journal of Materiomics 2024年第2期10卷 315-338页

作者： Guojing Wang Shasha Lv Yuanhua Shen Wei Li Linhan Lin Zhengcao Li State Key laboratory of New ceramics and Fine Processing Key Laboratory of Advanced Materials(MOE)School of Materials Science and EngineeringTsinghua UniversityBeijing100084China Key laboratory of Beam Technology and Material Modification Ministry of EducationCollege of Nuclear Science and TechnologyBeijing Normal UniversityBeijing100875China School of Physical Science and Technology Lanzhou UniversityLanzhou730000China Department of Engineering Physics Tsinghua UniversityBeijing100084China State Key laboratory of Precision Measurement Technology and Instruments Department of Precision InstrumentTsinghua UniversityBeijing100084China

Photocatalytic technology has emerged as a crucial avenue for harnessing solar energy,presenting itself as a viable solution to address the current energy crisis and environmental *** past 50 years have witnessed significant progress and breakthroughs in scientific research on photocatalytic *** paper provides a comprehensive review of the mechanism of photocatalytic technology and methods to improve the photocatalytic efficiency of semiconductor photocatalysts,such as TiO 2 and *** this paper,common modification methods are divided into four categories:heterojunction con-struction,cocatalysts,defects,and morphological *** origin and development of photo-catalysts in each category are briefly summarized;moreover,the latest progress in each type of modification is discussed.S-scheme heterojunctions retain the high reduction and oxidation capacity of photogenerated electrons and holes by sacrificing half of the photogenerated carriers,showing excellent performance in photocatalysis and great application *** challenges associated with current modification schemes are *** is growing interest in quantitative and atomic-level modu-lation as attractive approaches to tackling these *** the electronic spin state and internal field is important for minimizing photogenerated carrier recombination in *** review will inspire researchers and promote the application of photocatalytic technology.

关键词： Photocatalytic activity Modification Heterostructure Thermal annealing Ion irradiation

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Sintering effect on ageing behavior of rare earths (Pr_6O_(11)-Er_2O_3-Y_2O_3 )-doped ZnO varistor ceramics

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Journal of Rare Earths 2012年第10期30卷 1028-1033页

作者： Choon-Woo Nahm semiconductor ceramics laboratory Department of Electrical Engineering Dongeui University

The electrical properties and ageing behavior of the rare earths （Pr6O11-Er2O3-Y2O3）-doped ZnO varistor ceramics were systematically investigated at sintering temperature range of 1335-1350°C. With an increase in the sintering temperature, the sintered density increased from 5.41 to 5.64g/cm3 and the average grain size increased from 5.8 to 7.9μm. The varistor properties and ageing behavior were significantly affected by small sintering temperature range of 1335-1350°C. The breakdown field noticeably decreased from 5767 to 3628V/cm with an increase in the sintering temperature. The varistor ceramics exhibited the highest nonlinear coefficient （43.2） at the sintering temperature of 1340°C. The varistor ceramics sintered at 1350°C exhibited a surprisingly excellent stability by exhibiting 0.3% in the variation rate of the breakdown field and 0.3% in the variation rate of the nonlinear coefficient for ageing stress of 0.95 E1mA/150°C/24 h.

关键词： sintering rare earths nonlinear properties ageing varistors

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Sintering effect on electrical properties and pulse aging behavior of(V_2O_5-Mn_3O_4-Er_2O_3 )-doped zinc oxide varistor ceramics

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Journal of Rare Earths 2014年第1期32卷 29-36页

作者： Choon-W.Nahm semiconductor ceramics laboratory Department of Electrical Engineering Dongeui University

The effect of sintering temperature on microstructure, electrical properties, and pulse aging behavior of （V2O5-Mn3O4-Er2O3）-doped zinc oxide varistor ceramics was systematically studied. When the sintering temperature increased, the average grain size increased from 6.1 to 8.7μm and the sintered density decreased from 5.52 to 5.43 g/cm3. The breakdown field decreased from 3856 to 922 V/cm with an increase in the sintering temperature up to 900 °C, whereas a further increase to 2352 V/cm at 925 °C. The nonlinear coefficient increased pronouncedly from 4.6 to 30.0 with an increase in the sintering temperature. The varistor ceramics sintered at 850 °C exhibited the best clamping characteristics, with the clamp voltage ratio of the range of 2.22-2.88 for pulse current of 1-25 A. The varistor ceramics sintered at 925 °C exhibited the strongest stability, with %ΔE1 mA/cm2=-8.8% after applying the multi-pulse current of 25 A.

关键词： ceramics sintering electrical properties pulse aging behavior varistors rare earths

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Microstructure, electrical and dielectric properties, and aging behavior of ZPCCA varistor ceramics with Er_2O_3 doping

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Journal of Rare Earths 2015年第4期33卷 403-410页

作者： NAHM Choonwoo semiconductor ceramics laboratory Department of Electrical Engineering Dongeui University

The microstructure, electrical and dielectric properties, and DC-accelerated aging of the ZPCCA （ZnO-Pr6O11-CoO- Cr203-A1203） ceramics were investigated with various contents of Er203. The ceramic phases consisted of a bulk phase of ZnO grains, and a minor secondary phase of mixture of Pr6O11 and Er203. The increase of the content of doped Er203 increased the densities of sintered pellet from 5.66 to 5.85 g/cm3, and decreased the average grain size from 9.6 to 6.3 μm. With the increase of the content of doped Er203, the breakdown field increased from 2390 to 4530 V/cm, and the nonlinear coefficient increased from 28.4 to 39.1. The sample doped with 0.25 mol.% Er203 exhibited the strongest electrical stability; variation rates for the breakdown field measured at 1.0 mA/cm2, and for the non-ohmic coefficient were -3.4% and -23,8%, respectively, after application of a stress of 0.95 Eu/125 ℃/24 h.

关键词： microstructure Er203 electrical properties aging behavior varistor ceramics rare earths

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Depolarization mitigated in ferroelectric Hf_(0.5)Zr_(0.5)O_(2)ultrathin films(<5 nm)on Si substrate by interface engineering

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Journal of Advanced ceramics 2024年第3期13卷 282-292页

作者： Se Hyun Kim Younghwan Lee Dong Hyun Lee Geun Hyeong Park Hyun Woo Jeong Kun Yang Yong Hyeon Cho Young Yong Kim Min Hyuk Park Department of Materials Science and Engineering College of EngineeringSeoul National UniversitySeoul 08826Republic of Korea Research Institute of Advanced Materials College of EngineeringSeoul National UniversitySeoul 08826Republic of Korea Inter-university semiconductor Research Center College of EngineeringSeoul National UniversitySeoul 08826Republic of Korea Pohang Accelerator laboratory Pohang University of Science&TechnologyPohang 790784Republic of Korea

(Hf,Zr)O_(2)offers considerable potential for next-generation semiconductor devices owing to its nonvolatile spontaneous polarization at the ***,scaling this material to sub-5 nm thickness poses several challenges,including the formation of an interfacial layer and high trap *** particular,a low-k SiO_(2)interfacial layer is naturally formed when(Hf,Zr)O_(2)films are directly grown on a Si substrate,leading to high depolarization fields and rapid reduction of the remanent *** address these issues,we conducted a study to significantly improve ferroelectricity and switching endurance of(Hf,Zr)O_(2)films with sub-5 nm thicknesses by inserting a TiO_(2)interfacial *** deposition of a Ti film prior to Hf_(0.5)Zr_(0.5)O_(2)film deposition resulted in a high-k TiO_(2)interfacial layer and prevented the direct contact of Hf_(0.5)Zr_(0.5)O_(2)with *** findings show that the high-k TiO_(2)interfacial layer can reduce the SiO_(2)/Si interface trap density and the depolarization field,resulting in a switchable polarization of 60.2μC/cm^(2)for a 5 nm thick Hf_(0.5)Zr_(0.5)O_(2)***,we propose that inserting a high-k TiO_(2)interfacial layer between the Hf_(0.5)Zr_(0.5)O_(2)film and the Si substrate may offer a promising solution to enhancing the ferroelectricity and reliability of(Hf,Zr)O_(2)grown on the Si substrate and can pave the way for next-generation semiconductor devices with improved performance.

关键词： ferroelectric charge trapping hafnia depolarization

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Nonlinear behavior of Tb_4O_7-modified ZnO-Pr_6O_(11)-based ceramics with high breakdown field

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Journal of Rare Earths 2013年第3期31卷 276-280页

作者： Choon-Woo Nahm semiconductor ceramics laboratory Department of Electrical EngineeringDongeui UniversityBusan 614-714Korea

The effect of Tb407 on electrical behavior of the ZnO-Pr6Oll-based varistor ceramics was investigated. Microstructural analysis indicated that the addition of Tb407 decreased average grain size from 3.6 to 3.2 and increased the sintered density from 5.58 to 5.68 g/cm3. As the amount ofTb407 increased, the breakdown field increased from 9393 to 12437 V/cm and the nonlinear coefficient increased from 50 to 65. The varistor ceramics added with 0.5 mol.% in the amount of Tb407 exhibited an excellent stability by exhibiting 0. 1% in the variation rate of the breakdown field, 0% in the variation rate of the nonlinear coefficient, and 8.8% in the variation rate of the leakage current density for DC-accelerated aging stress of 0.85 E1 mA/115 ℃/24 h.

关键词： doping ZnO breakdown field electrical properties varistor ceramics rare earths

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Effect of sintering temperature on microstructure and varistor properties of Zn-V-O-based ceramics incorporated with Mn-Nb-Tb

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Transactions of Nonferrous Metals Society of China 2015年第12期25卷 4040-4045页

作者： C.W.NAHM semiconductor ceramics laboratory Department of Electrical Engineering Dongeui University

The effect of sintering temperature on microstructure and varistor properties of Zn-V-O-based ceramics incorporated with Mn-Nb-Tb was investigated. The results showed that the increase of sintering temperature in the range from 875 to 950 °C decreased the densities of sintered pellets in the range of 5.55 to 5.45 g/cm3 and increased the average grain size in the range of 4.1 to 8.8 ？m. The breakdown field decreased noticeably from 7443 to 1064 V/cm with increasing sintering temperature from 875 to 950 °C. The varistor ceramics sintered at 900 ？C exhibited nonlinear properties, with 49.4 in the nonlinear coefficient and 0.21 m A/cm2 in the leakage current density. The dielectric constant increased greatly from 440.1 to 2197.2 with increasing sintering temperature from 875 to 950 °C; however, the dissipation factor exhibited a fluctuation between 0.237 and 0.5. These ceramic compositions and sintering conditions can be applied to the development of advanced multiplayer varistors with silver as an inner electrode.

关键词： Zn-V-O-based ceramics Mn-Nb-Tb sintering varistor properties dielectric characteristics varistor

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