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FSS: algorithm and neural network accelerator for style transfer

Science China(Information Sciences) 2024年第2期67卷 253-266页

作者： Yi LING Yujie HUANG Yujie CAI Zhaojie LI Mingyu WANG Wenhong LI Xiaoyang ZENG State Key laboratory of asic & System Fudan University Shanghai Explore X Technology Co. Ltd.

Neural networks(NNs), owing to their impressive performance, have gradually begun to dominate multimedia processing. For resource-constrained and energy-sensitive mobile devices, an efficient NN accelerator is necessary. Style transfer is an important multimedia application. However, existing arbitrary style transfer networks are complex and not well supported by current NN accelerators, limiting their application on mobile devices. Moreover, the quality of style transfer needs improvement. Thus, we design the Fast Style system(FSS), where a novel algorithm and an NN accelerator are proposed for style transfer. In FSS, we first propose a novel arbitrary style transfer algorithm, Fast Style. We propose a light network that contributes to high quality and low computational complexity and a prior mechanism to avoid retraining when the style changes. Then, we redesign an NN accelerator for Fast Style by applying two improvements to the basic NVIDIA deep learning accelerator(NVDLA) architecture. First, a flexible dat FSM and wt FSM are redesigned to enable the original data path to perform other operations(including the GRAM operation)by software programming. Moreover, statistics and judgment logic are designed to utilize the continuity of a video stream and remove the data dependency in the instance normalization, which improves the accelerator performance by 18.6%. The experimental results demonstrate that the proposed Fast Style can achieve higher quality with a lower computational cost, making it more suitable for mobile devices. The proposed NN accelerator is implemented on the Xilinx VCU118 FPGA under a 180-MHz clock. Experimental results show that the accelerator can stylize 512×512-pixel video with 20 FPS, and the measured performance reaches up to 306.07 GOPS. The asic implementation in TSMC 28 nm achieves about 22 FPS in the case of a 720-p video.

关键词： neural network accelerator style transfer neural network deep learning

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The influence of the channel electric field distribution on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

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Journal of Semiconductors 2014年第12期35卷 48-52页

作者：于英霞林兆军吕元杰冯志红栾崇彪杨铭王玉堂 School of Physics Shandong University scienceand technologyon asic laboratory Hebei Semiconductor Research Institute

Based on the measured capacitance–voltage（C–V） curves and current–voltage（I–V） curves for the prepared differently-sized AlN/GaN heterostructure field-effect transistors（HFETs）, the I–V characteristics of the AlN/GaN HFETs were simulated using the quasi-two-dimensional（quasi-2D） model. By analyzing the variation in the electron mobility for the two-dimensional electron gas（2DEG） with the channel electric field, it is found that the different polarization charge distribution generated by the different channel electric field distribution can result in different polarization Coulomb field（PCF） scattering. The 2DEG electron mobility difference is mostly caused by the PCF scattering which can reach up to 899.6 cm^2/（V·s）（sample a）, 1307.4 cm^2/（V·s）（sample b）,1561.7 cm^2/（V s）（sample c） and 678.1 cm^2/（V·s）（sample d）, respectively. When the 2DEG sheet density is modulated by the drain–source bias, the electron mobility for samples a, b and c appear to peak with the variation of the 2DEG sheet density, but for sample d, no peak appears and the electron mobility rises with the increase in the2 DEG sheet density.

关键词： AlN/GaN heterostructure field-effect transistors channel electric field distribution polarization Coulomb field scattering electron mobility

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Picotesla fiberized diamond-based AC magnetometer

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Photonics Research 2024年第6期12卷 1250-1261页

作者： SHAO-CHUN ZHANG YONG LIU LONG-KUN SHAN XUE-DONG GAO JIA-QI GENG CUI YU YANG DONG XIANG-DONG CHEN GUANG-CAN GUO FANG-WEN SUN CAS Key laboratory of Quantum Information University of Science and Technology of ChinaHefei 230026China CAS Center for Excellence in Quantum Information and Quantum Physics University of Science and Technology of ChinaHefei 230026China National Key laboratory of asic Hebei Semiconductor Research InstituteShijiazhuang 050051China Electric Power Quantum Sensing Joint laboratory of Anhui Province State Grid Anhui Electric Power Research InstituteHefei 230601China Hefei National laboratory University of Science and Technology of ChinaHefei 230088China

Portable quantum sensors are crucial for developing practical quantum sensing and metrology *** nitrogen-vacancy(NV)centers in diamonds have emerged as one of the most promising candidates for compact quantum ***,due to the difficulty of coherently controlling the ensemble spin and noise suppression in a large volume,it often faces problems such as reduced sensitivity and narrowed bandwidth in integrated lensless ***,we propose a fluorescence signal treatment method for NV spin ensemble manipulation by the exponential fitting of spin polarization processes,instead of integrating the photon *** enables spin state readout with a high signal-to-noise ratio and applies to the pulse sensing protocols for large-volume NV *** on this,we further developed a fiberized diamond-based AC *** an XY8-N dynamical decoupling pulse sequence,we demonstrated a T_(2)-limited sensitivity of 8pT/√Hz and T_(1)-limited frequency resolution of 90 Hz over a wide frequency band from 100 kHz to 3 *** integrated diamond sensor leverages quantum coherence to achieve enhanced sensitivity in detecting AC magnetic fields,making it suitable for implementation in a compact and portable endoscopic sensor.

关键词： magnetometer quantum ensemble

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Fully sprayed MXene-based high-performance flexible piezoresistive sensor for image recognition

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Nano Materials Science 2024年第1期6卷 77-85页

作者： Zhi-Dong Zhang Xue-Feng Zhao Qing-Chao Zhang Jie Liang Hui-Nan Zhang Tian-Sheng Zhang Chen-Yang Xue Key laboratory of Instrumentation Science&Dynamic Measurement of Ministry of Education North University of ChinaTaiyuan030051People's Republic of China State Key laboratory of asic and System Shanghai Institute of Intelligent Electronics&SystemsSchool of MicroelectronicsFudan UniversityShanghai200433People's Republic of China Shanxi Hosipital of Acupuncture and Moxibustion Taiyuan030006People's Republic of China

High-performance flexible pressure sensors provide comprehensive tactile perception and are applied in human activity monitoring,soft robotics,medical treatment,and human-computer ***,these flexible pressure sensors require extensive nano-architectural design and complicated manufacturing and are ***,a highly sensitive,flexible piezoresistive tactile sensor is designed and fabricated,consisting of three main parts:the randomly distributed microstructure on T-ZnOw/PDMS film as a top substrate,multilayer Ti_(3)C_(2)-MXene film as an intermediate conductive filler,and the few-layer Ti_(3)C_(2)-MXene nanosheetbased interdigital electrodes as the bottom *** MXene-based piezoresistive sensor with randomly distributed microstructure exhibits a high sensitivity over a broad pressure range(less than 10 kPa for 175 kPa^(-1))and possesses an out-standing permanence of up to 5000 ***,a 16-pixel sensor array is designed,and its potential applications in visualizing pressure distribution and an example of tactile feedback are *** fully sprayed MXene-based pressure sensor,with high sensitivity and excellent durability,can be widely used in,electronic skin,intelligent robots,and many other emerging technologies.

关键词： Piezoresistive sensor Ti_(3)C_(2)-MXene T-ZnOw/PDMS film Randomly distributed microstructure

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Recent Advances in Electrochemical-Based Silicon Production Technologies with Reduced Carbon Emission

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Research 2024年第1期2023卷 209-236页

作者： Feng Tian Zhongya Pang Shen Hu Xueqiang Zhang Fei Wang Wei Nie Xuewen Xia Guangshi Li Hsien-Yi Hsu Qian Xu Xingli Zou Li Ji Xionggang Lu State Key laboratory of Advanced Special Steel&Shanghai Key laboratory of Advanced Ferrometallurgy&School of Materials Science and Engineering Shanghai University99#Shangda RoadShanghai 200444China Center for Hydrogen Metallurgy Technology Shanghai UniversityShanghai 200444China State Key laboratory of asic and System School of MicroelectronicsFudan University220#Handan RoadShanghai 200433China School of Energy and Environment Department of Materials Science and EngineeringCity University of Hong KongKowloon TongHong KongChina

Sustainable and low-carbon-emission silicon production is currently one of the main focuses for the metallurgical and materials science ***,considered a promising strategy,has been explored to produce silicon due to prominent advantages:(a)high electricity utilization efficiency;(b)low-cost silica as a raw material;and(c)tunable morphologies and structures,including films,nanowires,and *** review begins with a summary of early research on the extraction of silicon by *** has been placed on the electro-deoxidation and dissolution–electrodeposition of silica in chloride molten salts since the 21st century,including the basic reaction mechanisms,the fabrication of photoactive Si films for solar cells,the design and production of nanoSi and various silicon components for energy conversion,as well as storage ***,the feasibility of silicon electrodeposition in room-temperature ionic liquids and its unique opportunities are *** this basis,the challenges and future research directions for silicon electrochemical production strategies are proposed and discussed,which are essential to achieve large-scale sustainable production of silicon by electrochemistry.

关键词： directions electrodeposition electricity

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A review of ToF-based LiDAR

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Journal of Semiconductors 2024年第10期45卷 7-19页

作者： Jie Ma Shenglong Zhuo Lei Qiu Yuzhu Gao Yifan Wu Ming Zhong Rui Bai Miao Sun Patrick Yin Chiang The College of Electronics and Information Engineering Tongji UniversityShanghai 200092China State Key laboratory of asic&System Fudan UniversityShanghai 201203China School of Electrical and Electronic Engineering Nanyang Technological UniversitySingapore Lyne Technologies Shanghai 201203China

In recent years,propelled by the rapid iterative advancements in digital imaging technology and the semiconductor industry,encompassing microelectronic design,manufacturing,packaging,and testing,time-of-flight(ToF)-based imaging systems for acquiring depth information have garnered considerable attention from both academia and *** technology has emerged as a focal point of research within the realm of 3D *** to its relatively straightforward principles and exceptional performance,ToF technology finds extensive applications across various domains including human−computer interaction,autonomous driving,industrial inspection,medical and healthcare,augmented reality,smart homes,and 3D reconstruction,among ***,the increasing maturity of ToF-based LiDAR systems is evident in current *** paper comprehensively reviews the fundamental principles of ToF technology and LiDAR systems,alongside recent research *** elucidates the innovative aspects and technical challenges encountered in both transmitter(TX)and receiver(RX),providing detailed discussions on corresponding ***,the paper explores prospective avenues for future research,offering valuable insights for subsequent investigations.

关键词： time of flight light detection and ranging transmitter receiver

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Memristive switching in the surface of a charge-density-wave topological semimetal

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Science Bulletin 2024年第13期69卷 2042-2049页

作者： Jianwen Ma Xianghao Meng Binhua Zhang Yuxiang Wang Yicheng Mou Wenting Lin Yannan Dai Luqiu Chen Haonan Wang Haoqi Wu Jiaming Gu Jiayu Wang Yuhan Du Chunsen Liu Wu Shi Zhenzhong Yang Bobo Tian Lin Miao Peng Zhou Chun-Gang Duan Changsong Xu Xiang Yuan Cheng Zhang State Key laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing Fudan UniversityShanghai 200433China State Key laboratory of Precision Spectroscopy East China Normal UniversityShanghai 200241China Key laboratory of Computational Physical Sciences(Ministry of Education) Institute of Computational Physical SciencesState Key Laboratory of Surface PhysicsDepartment of PhysicsFudan UniversityShanghai 200433China Shanghai Qi Zhi Institute Shanghai 200030China School of Physics Southeast UniversityNanjing 211189China Key laboratory of Polar Materials and Devices(Ministry of Education) Department of ElectronicsEast China Normal UniversityShanghai 200241China Shanghai Center of Brain–inspired Intelligent Materials and Devices East China Normal UniversityShanghai 200241China State Key laboratory of asic and System School of MicroelectronicsFudan UniversityShanghai 200433China Frontier Institute of Chip and System Fudan UniversityShanghai 200433China Zhangjiang Fudan International Innovation Center Fudan UniversityShanghai 201210China School of Physics and Electronic Science East China Normal UniversityShanghai 200241China

Owing to the outstanding properties provided by nontrivial band topology,topological phases of matter are considered as a promising platform towards low-dissipation electronics,efficient spin-charge conversion,and topological quantum *** ferroelectricity in topological materials enables the non-volatile control of the quantum states,which could greatly facilitate topological electronic ***,ferroelectricity is generally incompatible with systems featuring metallicity due to the screening effect of free *** this study,we report the observation of memristive switching based on the ferroelectric surface state of a topological semimetal(TaSe_(4))*** find that the surface state of(TaSe_(4))2I presents out-of-plane ferroelectric polarization due to surface *** the combination of ferroelectric surface and charge-density-wave-gapped bulk states,an electric-switchable barrier height can be achieved in(TaSe_(4))2I-metal *** employing a multi-terminal-grounding design,we manage to construct a prototype ferroelectric memristor based on(TaSe_(4))2I with on/off ratio up to 103,endurance over 103 cycles,and good retention *** origin of the ferroelectric surface state is further investigated by first-principles calculations,which reveal an interplay between ferroelectricity and band *** emergence of ferroelectricity in(TaSe_(4))2I not only demonstrates it as a rare but essential case of ferroelectric topological materials,but also opens new routes towards the implementation of topological materials in functional electronic devices.

关键词： Topological semimetal Schottky barrier Surface ferroelectricity Memristor

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An 8-b 300MS/s folding and interpolating ADC for embedded applications

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Journal of Semiconductors 2010年第6期31卷 151-156页

作者：陆焱林俪夏杰峰叶凡任俊彦 State Key laboratory of asic & System

A 1,4-V 8-bit 300-MS/s folding and interpolating analog-to-digital converter（ADC） is *** in the 0.13-μm CMOS process and occupying only 0.6-mm^2 active area,the ADC is especially suitable for embedded *** system is optimized for a low-power *** sampling switches help to cut down the extra power needed for complete *** averaging resistor array is placed between two folding stages for power-saving *** converter achieves 43.4-dB signal-to-noise and distortion ratio and 53.3-dB spurious-free dynamic range at 1-MHz input and 42.1-dB and 49.5-dB for Nyquist *** results show a power dissipation of 34 mW and a figure of merit of 1.14 pJ/convstep at 250-MHz sampling rate at 1.4-V supply.

关键词： analog-to-digital convertor low-power low-voltage embedded folding and interpolating

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基于忆阻器的原位卷积策略用于精确盲文识别（英文）

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Science China Materials 2024年

作者：张翔鸿覃琮尧彭文鸿秦宁浦程恩平吴建鑫范裕阳杨倩陈惠鹏 Institute of Optoelectronic Display National & Local United Engineering Lab of Flat Panel Display Technology Fuzhou University State Key laboratory of asic and System School of Microelectronics Fudan University Zhicheng College Fuzhou University Fujian Science & Technology Innovation laboratory for Optoelectronic Information of China

大数据时代下,提高信号处理效率至关重要.由于传统计算架构的计算设备中存储单元和计算单元相互分离,未来将面临着计算效率的限制.基于多电导态器件的阵列电路可实现全硬件卷积神经网络(CNNs),具备提高计算效率的潜力.然而,在处理大规...

大数据时代下,提高信号处理效率至关重要.由于传统计算架构的计算设备中存储单元和计算单元相互分离,未来将面临着计算效率的限制.基于多电导态器件的阵列电路可实现全硬件卷积神经网络(CNNs),具备提高计算效率的潜力.然而,在处理大规模卷积计算时,仍存在大量器件冗余,导致计算功耗低、计算成本高.本文创新性地提出了一种基于忆阻器的器件级原位卷积策略:以忆阻器的导电丝、掺杂面积和极化面积等的动态变化作为卷积运算过程,单个器件的电导切换所需的时间作为计算结果,通过忆阻器独特的尖峰数字信号体现卷积计算.通过忆阻器将复杂的模拟信号合理地编码为简单的数字信号,成功在单个器件上完成了卷积计算,这对于复杂信号处理和计算效率提高至关重要.在器件级原位卷积计算的基础上,本文进一步实现了盲文信号的特征识别和噪声过滤.本文所提的基于单个忆阻器的器件级原位卷积计算,将推动具有大规模卷积计算能力的复杂CNNs的构建,促进神经形态计算领域的创新和发展.

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A 8.75-11.2-GHz,low phase noise fractional-N synthesizer for 802.11a/b/g zero-IF transceiver

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Journal of Semiconductors 2011年第6期32卷 78-83页

作者：梅年松潘姚华黄煜梅洪志良 State Key laboratory of asic & Systems Fudan University

An ultra broadband fractional-N frequency synthesizer for 802.11a/b/g zero-IF transceiver application is *** mathematical models for the behavior of the synthesizer＇s spur and phase noise are analyzed,and the optimization methodology is *** results exhibits that the frequency synthesizer＇s integrated phase noise is less than 1°（1 kHz to 100 MHz）with a 4.375 GHz carrier（after divide-by-2）,and the reference frequency spur is below-60 dBc operating with a 33 MHz reference *** frequency synthesizer is fabricated on a standard 0.13μm RF CMOS process and consumes 39.6 mW from a 1.2 V supply voltage.

关键词： frequency synthesizer VCO phase frequency detector sigma-delta modulator charge pump

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