检索结果-南通市图书馆

Defects‑Rich Heterostructures Trigger Strong Polarization Coupling in Sulfides/Carbon Composites with Robust Electromagnetic Wave Absorption

在线全文

学校读者我要写书评

暂无评论

Nano-Micro Letters 2025年第1期17卷 528-547页

作者： Jiaolong Liu Siyu Zhang Dan Qu Xuejiao Zhou Moxuan Yin Chenxuan Wang Xuelin Zhang Sichen Li Peijun Zhang Yuqi Zhou Kai Tao Mengyang Li Bing Wei Hongjing Wu Mengyang Li Bing Wei Hongjing Wu school of physics Xidian UniversityXi’an 710071People’s Republic of China school of Advanced materials and Nanotechnology State Key Discipline Laboratory of Wide Band Gap Semiconductor TechnologyXidian UniversityXi’an 710071People’s Republic of China school of Microelectronics Xidian UniversityXi’an 710071People’s Republic of China school of Telecommunication Engineering Xidian UniversityXi’an 710071People’s Republic of China MOE key laboratory of Material physics and Chemistry Under Extraordinary School of Physical Science and TechnologyNorthwestern Polytechnical UniversityXi’an 710072People’s Republic of China The Ministry of Education key laboratory of Micro and Nano Systems forAerospace School of Mechanical EngineeringNorthwestern PolytechnicalUniversityXi’an 710072People’s Republic of China

Defects-rich heterointerfaces integrated with adjustable crystalline phases and atom vacancies,as well as veiled dielectric-responsive character,are instrumental in electromagnetic *** methods,however,constrain their delicate ***,an innovative alternative is proposed:carrageenan-assistant cations-regulated(CACR)strategy,which induces a series of sulfides nanoparticles rooted in situ on the surface of carbon *** unique configuration originates from strategic vacancy formation energy of sulfides and strong sulfides-carbon support interaction,benefiting the delicate construction of defects-rich heterostructures in M_(x)S_(y)/carbon composites(M-CAs).Impressively,these generated sulfur vacancies are firstly found to strengthen electron accumulation/consumption ability at heterointerfaces and,simultaneously,induct local asymmetry of electronic structure to evoke large dipole moment,ultimately leading to polarization coupling,i.e.,defect-type interfacial ***“Janus effect”(Janus effect means versatility,as in the Greek two-headed Janus)of interfacial sulfur vacancies is intuitively confirmed by both theoretical and experimental investigations for the first ***,the sulfur vacancies-rich heterostructured Co/Ni-CAs displays broad absorption bandwidth of 6.76 GHz at only 1.8 mm,compared to sulfur vacancies-free CAs without any dielectric *** defects-rich heterostructures,this one-pot CACR strategy may steer the design and development of advanced nanomaterials,boosting functionality across diverse application domains beyond electromagnetic response.

关键词： Defects-rich heterointerfaces Sulfides Polarization coupling Electromagnetic wave absorption

Bifunctional bridging capping layer enables 24.5% efficiency of perovskite solar cells with polymer-based hole transport materials

在线全文

学校读者我要写书评

暂无评论

Science China Chemistry 2025年第01期 350-359页

作者： Can Zhu Yiyang Wang Lei Meng Beibei Qiu Jing Li Shucheng Qin Ke Hu Xin Jiang Wenbin Lai Minchao Liu Zhe Liu Chenxing Lu Jinyuan Zhang Yongfang Li Beijing National laboratory for Molecular Sciences CAS Key Laboratory of Organic Solids Institute of Chemistry Chinese Academy of Sciences school of Chemical Science University of Chinese Academy of Sciences key laboratory of Solid state optoelectronic Devices of Zhejiang Province College of Physics and Electronic Information Engineering Zhejiang Normal University key laboratory of Photochemical Conversion and optoelectronic materials Technical Institute of Physics and ChemistryChinese Academy of Sciences laboratory of Advanced optoelectronic materials College of Chemistry Chemical Engineering and Materials ScienceSoochow University

Developing a bridge capping layer between perovskite and hole transport layer materials（HTMs） in the n-i-p perovskite solar cells（pero-SCs） is an effective approach to modify the morphology of HTMs and passivate the perovskite ***, we select the quinoxaline-based bifunctional passivation agent, quinoxalin-6-yl-methylamine hydrochloride（Qx MACl）,as the bridging layer, and a D-A copolymer PBQ12 containing the same quinoxaline unit as an HTM for the n-i-p pero-SCs. Due to the π-π stacking among the common quinoxaline units in the bridge layer and HTM, Qx MACl induces the π-π stacking of the PBQ12 film and improves the film morphology of HTMs with better conductivity. Additionally, Qx MACl can effectively passivate the perovskite surface, and PBQ12 possesses appropriate energy levels and high hole mobility. The pero-SCs based on FAPbI3with PBQ12/Qx MACl treatment showed a higher power conversion efficiency（PCE） of 24.05% and outstanding stability, maintaining 95.4% and 92.1% of its initial PCE after 750 h of storage and after over 800 h of thermal annealing at 85 °C, respectively. To further enhance the PCE of the PBQ12/Qx MACl-based devices, we developed a non-metal ion dopant for the PBQ12 HTM. Through trace doping of PBQ12 HTM by the non-metal ion dopant, the PCE of the PBQ12/Qx MACl-based devices reached 25.24%（the calibrated PCE of 24.55% by the National Institute of Metrology, China）.

关键词：

Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Chinese physics B 2015年第5期24卷 529-534页

作者：倪毅强贺致远姚尧杨帆周德秋周桂林沈震钟健郑越张佰君刘扬 school of physics and Engineering State Key Laboratory of Optoelectronic Materials and TechnologiesSun Yat-Sen University

We report a novel structure of A1GaN/GaN heterostructure field effect transistors （HFETs） with a Si and Mg pair- doped interlayer grown on Si substrate. By optimizing the doping concentrations of the pair-doped interlayers, the mobility of 2DEG increases by twice for the conventional structure under 5 K due to the improved crystalline quality of the conduction channel. The proposed HFET shows a four orders lower off-state leakage current, resulting in a much higher on/off ratio （ - 10^9）. Further temperature-dependent performance of Schottky diodes revealed that the inhibition of shallow surface traps in proposed HFETs should be the main reason for the suppression of leakage current.

关键词： heterostructure field effect transistor (HFET) GaN on Si interlayers high on/off ratio

Influences of stress on the properties of GaN/InGaN multiple quantum well LEDs grown on Si(111) substrates

在线全文

学校读者我要写书评

暂无评论

Chinese physics B 2015年第6期24卷 656-661页

作者：柳铭岗杨亿斌向鹏陈伟杰韩小标林秀其林佳利罗慧廖强臧文杰吴志盛刘扬张佰君 school of physics and Engineering State Key Laboratory of Optoelectronic Materials and TechnologiesSun Yat-Sen University

The influences of stress on the properties of InGaN/GaN multiple quantum wells （MQWs） grown on silicon substrate were investigated. The different stresses were induced by growing InGaN and A1GaN insertion layers （IL） respectively before the growth of MQWs in metal-organic chemical vapor deposition （MOCVD） system. High resolution x-ray diffrac- tion （HRXRD） and photoluminescence （PL） measurements demonstrated that the InGaN IL introduced an additional ten- sile stress in n-GaN, which released the strain in MQWs. It is helpful to increase the indium incorporation in MQWs. In comparison with MQWs without the IL, the wavelength shows a red-shift. A1GaN IL introduced a compressive stress to compensate the tensile stress, which reduces the indium composition in MQWs. PL measurement shows a blue-shift of wavelength. The two kinds of ILs were adopted to InGaN/GaN MQWs LED structures. The same wavelength shifts were also observed in the electroluminescence （EL） measurements of the LEDs. Improved indium homogeneity with InGaN IL, and phase separation with A1GaN IL were observed in the light images of the LEDs.

关键词： GaN/InGaN LEDs stress indium composition

The spin evolution of spin-3 ^(52)Cr Bose-Einstein condensate

在线全文

学校读者我要写书评

暂无评论

Chinese physics B 2011年第1期20卷 157-164页

作者：司徒树平贺彦章 state key laboratory of optoelectronic materials and technologies and School of Physics and EngineeringSun Yat-Sen University

This paper studies theoretically the spin evolution of a Bose-Einstein condensate starting from a mixture of two or three groups of 52Cr （spin-3） atoms in an optical trap. The initial state is so chosen that the condensate has total magnetization zero so that the system does not distinguish up and down. It is assumed that the system is very dilute （particle number is very small）, the temperature is very low, and the frequency of the harmonic trap is large enough. In these situations, the deviation caused by the neglect of the dipole-dipole interaction and by using the single-mode approximation is reduced. A theoretical calculation beyond the mean field theory is performed and the numerical results are helpful for the evaluation of the unknown strength go.

关键词： Bose-Einstein condensate spin evolution short-ranged interaction strength

Catalytic mechanism of Cu(p-OTs)_2/ethanolamine as mimetic enzyme

在线全文

学校读者我要写书评

暂无评论

中国有色金属学会会刊：英文版 2004年第6期14卷 1215-1220页

作者：宋继国沈培康 state key laboratory of optoelectronic materials and technologies School of Physics and Engineering Zhongshan University Guangzhou 510275 China

The electrochemical behaviors of various copper salts complexes coordinated with equal molar ethanolamine were studied, and those of Cu（p-OTs）2 and Cu（p-OTs）2/ethanolamine（1∶1） complex in CH3OH or DMF were characterized. The results show that the reduction of Cu（Ⅱ） in Cu（p-OTs）2 is via one two-electron step mechanism both in CH3OH and DMF. The reduction mechanism transforms to two one-electron steps in the case of Cu（p-OTs）2/ethanolamine（1∶1） in DMF. However, it does not change in CH3OH. All the Cu（Ⅱ）/ethanolamine（1∶1） with the electrochemical reactions are through two one-electron steps, and can act as mimetic enzyme to oxidize 1,1′-bi-2-naphthol. The Cu（Ⅱ）/ethanolamine（1∶1） with electrochemical reactions through one two-electron step could not act as mimetic enzyme. It is concluded that the transformation between centre Cu（Ⅱ） and Cu（Ⅰ） is the crucial condition for the catalytic activity of copper-amine complex.

关键词：催化机理拟态酶电化学乙醇胺甲苯磺酸铜

Electrical properties of MOCVD-grown GaN on Si (111) substrates with low-temperature AlN interlayers

在线全文

学校读者我要写书评

暂无评论

Chinese physics B 2013年第8期22卷 690-693页

作者：倪毅强贺致远钟健姚尧杨帆向鹏张佰君刘扬 school of physics and Engineering State Key Laboratory of Optoelectronic Materials and Technologies Sun Yat-Sen University

The electrical properties of the structure of GaN grown on an Si （111） substrate with low-temperature （LT） A1N interlayers by metal-organic chemical-vapour deposition are investigated. An abnormal P-type conduction is observed in our GaN-on-Si structure by Hall effect measurement, which is mainly due to the A1 atom diffusing into the Si substrate and acting as an acceptor dopant. Meanwhile, a constant n-type conduction channel is observed in LT-A1N, which causes a conduction-type conversion at low temperature （50 K） and may further influence the electrical behavior of this structure.

关键词： metal-organic chemical-vapour deposition GaN-on-Si electrical behavior low-temperature A1Ninterlayers

Tuning a nano-pillar array for enhancing the photoluminescence extraction efficiency of GaN-based light-emitting diodes

在线全文

学校读者我要写书评

暂无评论

Chinese physics B 2013年第4期22卷 519-522页

作者：陈夏梁柱洪陈湛旭杨伟明陈土福金崇君张佰君 state key laboratory of optoelectronic materials and technologies School of Physics and Engineering Sun Yat-Sen University

We demonstrate the fabrication of hexagonal nano-pillar arrays at the surface of GaN-based light-emitting diodes （LEDs） by nanosphere lithography. By varying the oxygen plasma etching time, we could tune the size and shape of the pillar. The nano-pillar has a truncated cone shape. The nano-pillar array serves as a gradual effective refractive index matcher, which reduces the reflection and increases light cone. It is found that the patterned surface absorbs more pumping light. To compare extraction efficiencies of LEDs, it is necessary to normalize the photoluminescence power spectrum with total absorption rate under fixed pumping power, then we could obtain the correct enhancement factor of the photoluminescence extraction efficiency and optimized structure. The highest enhancement factor of the extraction efficiency is 10.6.

关键词： colloidal lithography light-emitting diode extraction efficiency

A compact in-plane photonic crystal channel drop filter

在线全文

学校读者我要写书评

暂无评论

Chinese physics B 2011年第7期20卷 228-232页

作者：赵铱楠李科铮王雪华金崇君 state key laboratory of optoelectronic materials and technologies School of Physics and EngineeringSun Yat-sen University

This paper presents a novel in-plane photonic crystal channel drop filter. The device is composed of a resonant cavity sandwiched by two parallel waveguides. The cavity has two resonant modes with opposite symmetries. Tuning these two modes into degeneracy causes destructive interference in bus waveguide, which results in high forward drop efficiency at the resonant wavelength. From the result of numerical analysis by using two-dimensional finite-difference time-domain method, the channel drop filter has a drop efficiency of 96% and a Q value of over 3000, which can be used in dense wavelength division multiplexing systems.

关键词： photonic band gap materials integrated optics optical waveguides optical communications devices