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Suppression of ion migration in perovskite materials by pulse-voltage method

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Chinese physics B 2021年第11期30卷 618-624页

作者：王雪岩王虎陈烙然邵宇川邵建达 school of Physical Science and Technology ShanghaiTech UniversityShanghai 201210China laboratory of Thin Film Optics Shanghai Institute of Optics and Fine MechanicsChinese Academy of SciencesShanghai 201800China key laboratory of materials for High Power Laser Shanghai Institute of Optics and Fine MechanicsChinese Academy of SciencesShanghai 201800China Hangzhou Institute for Advanced Study University of Chinese Academy of SciencesHangzhou 310024China Center of materials Science and optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

Hybrid halide perovskites have great potential for applications in optoelectronic ***,the typical ion migration in perovskite could lead to the non-repeatability of electrical measurement,instability of material,and degradation of device *** basic current–voltage behavior of perovskite materials is intricate due to the mixed electronic–ionic characteristic,which is still poorly understood in these *** novel measurement schematic is a promising solution to obtain the intrinsic electrical performance without the interference of ion ***,we explore the pulse-voltage(PV)method on methylammonium lead tribromide single crystals to protect the device from the ion migration.A guideline is summarized through the analysis of measurement history and condition *** influence of the ion migration on current–voltage measurement,such as repeatability and hysteresis loop,is under *** application of the PV method is demonstrated on the activation energy of *** abruption of activation energy still exists near the phase transition temperature despite the ion migration is excluded by the PV method,introducing new physical insight on the current–voltage behavior of perovskite *** guideline on PV method will be beneficial for measuring halide perovskite materials and developing optoelectronic applications with new technique schematic.

关键词： perovskites ion migration electrical properties temperature-dependent resistivity

Angle-selective perfect absorption with two-dimensional materials

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Light(Science & Applications) 2015年第1期4卷 59-64页

作者： Linxiao Zhu Fengyuan Liu Hongtao Lin Juejun Hu Zongfu Yu Xinran Wang Shanhui Fan Department of Applied physics Stanford UniversityStanfordCA 94305USA National laboratory of Solid State microstructures School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210093China Department of materials Science and Engineering Massachusetts Institute of TechnologyMA 02139USA Department of Electrical and Computer Engineering University of Wisconsin-MadisonMadisonWI 53706USA Department of Electrical Engineering Ginzton LaboratoryStanford UniversityStanfordCA 94305USA

Two-dimensional(2D)materials have great potential in photonic and optoelectronic ***,the relatively weak light absorption in 2D materials hinders their application in practical ***,we propose a general approach to achieve angleselective perfect light absorption in 2D *** a demonstration of the concept,we experimentally show giant light absorption by placing large-area single-layer graphene on a structure consisting of a chalcogenide layer atop a mirror and achieving a total absorption of 77.6%in the mid-infrared wavelength range(~13μm),where the graphene contributes a record-high 47.2%absorptivity of mid-infrared *** of such an angle-selective thin optical element is important for solar and thermal energy harvesting,photo-detection and sensing *** study points to a new opportunity to combine 2D materials with photonic structures to enable novel device applications.

关键词： angle-selective perfect absorption angle-selective thin optical element graphene mid-infrared two-dimensional materials

InfoMat:A cross-field exploration of information technology and materials science

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InfoMat 2019年第1期1卷 4-5页

作者： Yanrong Li Qihua Xiong Yichun Liu Jianhua Hao Roberto Morandotti Carole Diederichs State key laboratory of Electronic Thin Film and Integrated devices University of Electronic Science and Technology of ChinaChengduChina Division of physics and Applied physics School of Physical and Mathematical SciencesNanyang Technological UniversitySingapore Center for Advanced Optoelectronic Functional materials Research Northeast Normal UniversityChangchunChina Department of Applied physics Hong Kong Polytechnic UniversityHung HomHong Kong Institut National de la Recherche Scientifique Universitédu QuébecVarennesQuebecCanada Laboratoire Pierre Aigrain Ecole Normale SupérieurePSL Research UniversitySorbonne UniversitésParisFrance

As our modern society continuously embraces the captivating concepts of automation,artificial intelligence,virtual/augmented reality,and machine learning,information technology has extensively influenced all aspects of our personal,professional,and social *** technology will continue to transform the world for decades to ***,the innovation of information technology not only relies on the development of sophisticated algorithms and programming but also requires novel materials and high-performance devices to achieve interactions between humans and *** microprocessors and other key components shrinking down to nanoscale,electronic devices have fundamentally altered our communication and working patterns,ushering in a new era of the“Internet of Things.”However,current microelectronic technologies still need to overcome the physical limitations of traditional semiconductor materials to keep“Moore's law”*** from different fields have realized that developing novel and reliable materials is essential to improving computing capability and device portability and functionality while reducing energy *** unremitting efforts of cross-field research works have broadened the academic horizon and brought together materials scientists,chemists,applied and theoretical physicists,and electrical engineers,designing new material paradigms and state-of-the-art manufacturing methods or reviving present materials for brand-new applications for next-generation information technology.

关键词： overcome programming designing

由p型CuI颗粒覆盖层诱发的全无机CsPbI2Br钙钛矿薄膜的相变研究

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Science China materials 2020年第12期63卷 2487-2496页

作者：朱治苏文婧冯建勇李金城韩晓鹏于涛李朝升邹志刚 National laboratory of Solid State microstructures Nanjing UniversityNanjing 210093China Ecomaterials and Renewable energy Research Center(ERERC) School of PhysicsNanjing UniversityNanjing 210093China Collaborative Innovation Center of Advanced microstructures Nanjing UniversityNanjing 210093China Jiangsu Provincial key laboratory for nanotechnology Nanjing UniversityNanjing 210093China College of Engineering and Applied Sciences Nanjing UniversityNanjing 210093China

由于具有良好的光吸收特性和光热稳定性,富碘型全无机钙钛矿结构CsPbI2Br光电功能材料受到了广泛关注.然而,具有钙钛矿结构的α相CsPbI2Br在高湿度环境下易发生相变,转变为具有非钙钛矿结构的δ相CsPbI2Br.因此基于CsPbI2Br材料的光电... 详细信息

由于具有良好的光吸收特性和光热稳定性,富碘型全无机钙钛矿结构CsPbI2Br光电功能材料受到了广泛关注.然而,具有钙钛矿结构的α相CsPbI2Br在高湿度环境下易发生相变,转变为具有非钙钛矿结构的δ相CsPbI2Br.因此基于CsPbI2Br材料的光电器件通常需要在干燥环境中保存以维持器件性能稳定.在本研究中,我们将干燥且不吸湿的p型无机空穴传输材料Cu I的颗粒涂覆在α相CsPbI2Br薄膜表面并对样品进行加热,实验测试结果表明,这层CuI颗粒同样会诱发α相CsPbI2Br转变为δ相CsPbI2Br,且该相变过程的速率随加热温度的升高、CuI颗粒覆盖度的提升而加快.这种异于湿度诱导的钙钛矿结构CsPbI2Br相变行为,为研究者在思考、评估和分析基于富碘型全无机钙钛矿结构CsPbX3(X=Br,I)光电功能材料的高性能光电器件稳定性问题上,提供了有益的借鉴和帮助.

关键词：钙钛矿结构光电功能材料光电器件空穴传输材料光吸收特性干燥环境钙钛矿薄膜覆盖层

Scaling behavior of thermal conductivity in single-crystallineα-Fe2O3 nanowires

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Chinese physics B 2020年第8期29卷 96-101页

作者：王啟浪陈允玉阿地力·艾依提郑敏锐李念北徐象繁 Center for Phononics and Thermal energy Science China-EU Joint Center for NanophononicsSchool of Physics Science and EngineeringTongji UniversityShanghai 200092China The First Affiliated Hospital of Wenzhou Medical University Wenzhou 325000China Department of Electrical and Computer Engineering Faculty of EngineeringNational University of Singapore4 Engineering Drive 3Singapore 117583 Institute of Systems Science and Department of physics College of Information Science and EngineeringHuaqiao UniversityXiamen 361021China

Unveiling the thermal transport properties of various one-dimensional(1D)or quasi-1D materials like nanowires,nanotubes,and nanorods is of great importance both theoretically and *** dimension or size dependence of thermal conductivity is crucial in understanding the phonon-phonon interaction in the low-dimensional *** this paper,we experimentally investigate the size-dependent thermal conductivity of individual single crystallineα-Fe2O3 nanowires collaborating the suspended thermal bridge method and the focused electron-beam self-heating technique,with the sample diameter(d)ranging from 180 nm to 661 nm and length(L)changing from 4.84μm to 20.73μ*** empirical relationship for diameter-/length-dependent thermal conductivity is obtained,which shows an approximately linear dependence on the aspect ratio(L/(1+Cd))at T=300 K,where C is a fitting *** is related to the boundary scattering and diameter effect ofα-Fe2O3 nanowires although rigorous calculations are needed to confirm the result.

关键词： thermal conductivity size-dependent boundary scattering nanowire

Boosting the rate capability of multichannel porous TiCh nanofibers with well-dispersed Cu nanodots and Cu^2+-doping derived oxygen vacancies for sodium-ion batteries

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nano Research 2019年第9期12卷 2211-2217页

作者： Ying Wu Zengxi Wei Rui Xu Yue Gong Lin Gu Jianmin Ma Yan Yu Department of materials Science and Engineering University of Science and Technology of ChinaKey Laboratory of Materials far Energy ConversionChinese Academy of Sciences (CAS)Hefei 230026China school of physics and Electronics Hunan UniversityChangsha 410082China Beijing laboratory for Electron microscopy Institute of PhysicsChinese Academy of Sciences (CAS)Beijing 100190China Collaborative Innovation Center of Quantum Matter Beijing 100190China State key laboratory of Fire Science University of Science and Technology cf ChinaHefti 230026China Dalian National laboratory for Clean energy (DNL) Chinese Academy of Sciences (CAS)Dalian 116023China

The use of TiO2 as an anode in rechargeable sodium-ion batteries(NIBs)is hampered by intrinsic low electronic conductivity of TiO2 and in ferior electrode ***,a high-performa nee T1O2 electrode for NIBs is prese nted by desig ning a multicha rinel porous T1O2 nano fibers with well-dispersed Cu nan odots and Cu^2+-doping derived oxyge n vaca ncies(Cu-MPTO).The in-situ grow n well-dispersed copper nano dots of about 3 nm on TiO2 surface could significantly enhance electronic conductivity of the TiO2 *** one-dimensional multichannel porous structure could facilitate the electrolyte to soak in,leadi ng to short tran sport path of Na^+through carb on toward the TiO2 nano *** Cu^2+-doping induced oxygen vacancies could decrease the bandgap of T1O2,resulting in easy electron *** this strategy,the Cu-MPTO electrodes render an outstanding rate performance for NIBs(120 mAh·g^-1 at 20 C)and a superior cycling stability for ultralong cycle life(120 mAh·g^-1 at 20 C and 96.5%retention over 2,000 cycles).Density functional theory(DFT)calculations also suggest that Cu^2+doping can enhance the conductivity and electron transfer of T1O2 and lower the sodiation energy *** strategy is confirmed to be a general process and could be extended to improve the performance of other materials with low electronic conductivity applied in energy storage systems.

关键词： multicha nnel porous T1O2 nano fibers Cu nano dots Cu^2+dopi ng sodium ion batteries density functional theory(DFT)calculati ons

Rabi Spectroscopy and Sensitivity of a Floquet Engineered Optical Lattice Clock

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Chinese physics Letters 2021年第7期38卷 29-33页

作者：尹默娟汪涛卢晓同李婷王叶兵张学锋李卫东 Augusto Smerzi 常宏 key laboratory of Time and Frequency Primary Standards National Time Service CenterChinese Academy of SciencesXi'an 710600China Department of physics and Center of Quantum Materials and DevicesChongqing UniversityChongqing 401331China Department of physics and Institute of Theoretical physics Shanxi UniversityTaiyuan 030006China QSTAR INO-CNRand LENSLargo Enrico Fermi 2I-50125 FirenzeItaly school of Astronomy and Space Science University of Chinese Academy of SciencesBeijing 100049China

We periodically modulate the lattice trapping potential of a ^(87)Sr optical clock to Floquet engineer the clock *** the context of atomic gases in lattices,Floquet engineering has been used to shape the dispersion and topology of Bloch quasi-energy *** from these previous works manipulating the external(spatial)quasi-energies,we target the internal atomic degrees of *** shape Floquet spin quasi-energies and measure their resonance profiles with Rabi *** provide the spectroscopic sensitivity of each band by measuring the Fisher information and show that this is not depleted by the Floquet dynamical *** demonstration that the internal degrees of freedom can be selectively engineered by manipulating the external degrees of freedom inaugurates a novel device with potential applications in metrology,sensing and quantum simulations.

关键词： spectroscopy transition quasi

Fabrication and Characterization of GaN-Based micro-LEDs on Silicon Substrate

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Chinese physics Letters 2019年第8期36卷 94-97页

作者：王琦余俊驰陶涛刘斌智婷岑旭谢自力修向前周玉刚郑有炓张荣 key laboratory of Advanced Photonic and Electronic materials School of Electronic Science and EngineeringNanjing UniversityNanjing210093 Nanjing National laboratory of microstructures Nanjing UniversityNanjing210093 College of Electronic and Optical Engineering&College of microelectronics Nanjing University of Posts andTelecommunicationsNanjing210093

GaN-based micro light emitting diodes(micro-LEDs) on silicon(Si)substrates with 40μm in diameter are developed utilizing standard photolithography and inductively coupled plasma etching *** currentvoltage curves,the relatively low turn-on voltage of 2.8 V and low reverse leakage current in the order of 10-8 A/cm2 indicate good electrical *** the injection current increases,the electroluminescence emission wavelength hardly shifts at around 433 nm, and the relative external quantum efficiency slightly decays,because the impact of quantum-confined Stark effect is not serious in violet-blue *** GaN-LEDs are cost effective on large-area Si and suitable for substrate transfer or vertical device structures,the fabricated micro-LEDs on Si should have promising applications in the fields of high-resolution display and optical communication.

关键词： Fabrication Characterization Silicon

Analysis of properties of krypton ion-implanted Zn-polar ZnO thin films

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Chinese physics B 2021年第9期30卷 528-533页

作者：姜清芬连洁英敏菊魏铭洋王宸琳张裕 school of Information Science and Engineering Shandong Provincial Key Laboratory of Laser Technology and ApplicationShandong UniversityJinan 250100China key laboratory of Beam Technology of Ministry of Education College of Nuclear Science and TechnologyBeijing Normal UniversityBeijing 100875China

The optical properties of materials are of great significance for their device *** numbers of krypton ions are doped into high-quality Zn-polar ZnO films fabricated by molecular beam epitaxy(MBE)on sapphire substrates through ion *** is chemically *** structures,morphologies,and optical properties of films are *** x-ray diffraction(XRD)spectra confirm the wurtzite structures of Zn-polar ZnO *** force microscopy(AFM)results show that the films have pit surface structure and higher roughness after Kr ion implantation.A detailed investigation of the optical properties is performed by using the absorption spectrum,photoluminescence(PL),and spectroscopic ellipsometry(SE).The absorption spectrum is measured by UV-visible spectrophotometer and the bandgap energy is estimated by the Tauc *** results show that the absorption increases and the bandgap decreases after Kr ion ***,the Kr ion implantation concentration also affects the properties of the *** ellipsometry results show that the films'refractive index decreases with the Kr ion implantation concentration *** results can conduce to the design and optimization of Kr ion-implanted polar ZnO films for optoelectronic applications.

关键词： polar ZnO film molecular beam epitaxy Kr implantation optical properties bandgap