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Chinese Physics B 2024年第4期33卷 339-343页

作者：郑煜臻熊康林冯加贵杨辉 school of nano-Tech and nano-bionics University of Science and Technology of ChinaHefei 230026China Suzhou Institute of nano-Tech and nano-bionics Chinese Academy of SciencesSuzhou 215123China

A Josephson traveling wave parametric amplifier(JTWPA),which is a quantum-limited amplifier with high gain and large bandwidth,is the core device of large-scale measurement and control systems for quantum computing.A typical JTWPA consists of thousands of Josephson junctions connected in series to form a transmission line and hundreds of shunt LC resonators periodically loaded along the line for phase matching.Because the variation of these capacitors and inductors can be detrimental to their high-frequency characteristics,the fabrication of a JTWPA typically necessitates precise processing equipment.To guide the fabrication process and further improve the design for manufacturability,it is necessary to understand how each electronic component affects the amplifier.In this paper,we use the harmonic balance method to conduct a comprehensive study on the impact of nonuniformity and fabrication yield of the electronic components on the performance of a JTWPA.The results provide insightful and scientific guidance for device design and fabrication processes.

关键词： Josephson traveling wave parametric amplifier(JTWPA) harmonic balance method yields uniformity

A Design of 2-Stage Voltage Ramp-Up SRAM Physical Unclonable Function

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Chinese Journal of Electronics 2024年第2期33卷 371-379页

作者： Minte SONG Nan LIU Shuaiyang ZHOU Zhengguang WANG Zhanqiang RU Peng DING Wei HUANG Helun SONG school of nano-Tech and nano-bionics University of Science and Technology of China Suzhou Institute of nano-Tech and nano-bionics Chinese Academy of Sciences

Silicon physical unclonable function（PUF） implemented by static random access memory（SRAM）exists inherent demerit of unstable cells due to noise of environment and circuits, which significantly restricts its reproducibility. In this paper, a 16T SRAM cell with reset-delay circuit and a 2-stage voltage ramp up is fabricated and reported. Compared to conventional SRAM structure, each PUF cell adds a pair of pull-up PMOS（P-channel metal oxide semiconductor） and pull-down NMOS（N-channel metal oxide semiconductor） controlled by reset and delayedreset signals respectively, resulting in two positive feedback stages with different amplification coefficients when the voltage is ramped up. PUF array consists of 4064 cells, 322 dummy cells and a group of 8 series-connected inverters with an area of 304 μm × 650 μm to match the digital post-processing module. PUF test chip was fabricated in HHGrace 110 nm platform with total area 1140 × 1140 μm2. The average HDintra（intra-chip Hamming distance, also bit error rate, BER） and HDinter（inter-chip Hamming distance） values of the 50 PUF chips in SOP16 package measured at normal point（1.5 V/25 ℃） were 1.92% and 49.85%, respectively.

关键词： Physical unclonable function Static random access memory Integrated circuits

Flexible bidirectional self-powered photodetector with significantly reduced volume and accelerated response speed based on hydrogel and lift-off GaN-based nanowires

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Fundamental Research 2024年第2期4卷 369-378页

作者： Min Jiang Yukun Zhao Penghui Zheng Jianya Zhang Wenxian Yang Min Zhou Yuanyuan Wu Renjun Pei Shulong Lu Key Lab of nanodevices and Applications Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO)Chinese Academy of Sciences(CAS)Suzhou 215123China school of nano-Tech and nano-bionics University of Science and Technology of ChinaHefei 230026China CAS Key Laboratory of nano-Bio Interface Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China Nanchang Research Institute Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesNanchang 330200China

Due to the wide range of potential applications for next-generation multi-functional devices,the flexible selfpowered photodetector(PD)with polarity-switchable behavior is essential but very challenging to be realized.Herein,a wearable bidirectional self-powered PD based on detached(Al,Ga)N and(In,Ga)N nanowires has been proposed and demonstrated successfully.Arising from the photovoltage-competing dynamics across(Al,Ga)N and(In,Ga)N nanowire photoelectrodes,such PD can generate the positive(33.3 mA W−1)and negative(-0.019 mA W−1)photo-responsivity under ultraviolet(UV)and visible illumination,respectively,leading to the bidirectional photocurrent behavior.Thanks to the introduction of quasi solid-state hydrogel,the PD can work without the liquid-electrolyte,thus remarkably reducing the volume from about 482 cm3 to only 0.18 cm3.Furthermore,the use of hydrogel is found to enhance response speed in the UV range by reducing the response time for more than 95%,which is mainly attributed to the increased open circuit potential and reduced ion transport distance.As the GaN connecting segment is pretty thin,the piezoelectric charges generated by stress are proposed to have only a limited effect on the photocurrent density.Therefore,both the stable on-off switching characteristics and photocurrent densities can still be achieved after being bent 400 times.With an excellent flexibility,this work creates opportunities for technological applications of bidirectional photocurrent PDs in flexible optoelectronic devices,e.g.,wearable intelligent sensors.

关键词： Flexible photodetector Bidirectional photocurrent Lift-off GaN-based nanowires Hydrogel Self-powered device

Vertical two-dimensional WS_(2)flakes grown on flexible CNT film for excellent electrochemical performance

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Rare Metals 2024年第1期43卷 164-174页

作者： Qian Gong Jing-Yun Zou Ming Ren Si-Qi Zhu Yu-Rong Zhou Li-Ming Zhao Jian Chen Yu-Long Wu Jiang-Tao Di Li-Xing Kang Qing-Wen Li school of nano-Tech and nano-bionics University of Science and Technology of ChinaHefei 230026China Key Laboratory of Multifunctional nanomaterials and Smart Systems Division of Advanced MaterialsSuzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China Jiangsu Key Laboratory of Micro and nano Heat Fluid Flow technology and Energy Application School of Physical Science and TechnologySuzhou University of Science and TechnologySuzhou 215009China

Soft electrochemical actuators that can generate mechanical motions in response to electrical stimuli can be used as artificial muscles in microscale robots.The electrode materials are the key component of the electrochemical actuator because they limit the ion diffusion and accumulation processes and thus affect the deformation in fast response-time and potential engineering applications.Low-dimensional materials,such as one-dimensional(1D)CNT and two-dimensional(2D)vertically stood WS_(2),are great electrode due to their good electrochemical stability and high surface-to-volume ratios,but show limited performances when being used on their own in the actuators because of low reconstruction or low conductivity.A combination of 1D CNT and 2D WS_(2)could form a heterojunction with both high electrochemical activity and great mechanical stability.Herein,by depositing highly disordered graphene nanosheets(HDGNs)on CNT films and then WS_(2)on the formed low-dimensional nanocarbon film,a hybrid WS_(2)/HDGN/CNT film was synthesized through a multistep CVD method.Vertically grown WS_(2)nanosheets were achieved by taking advantage of HDGNs which limits CNTs sliding.So,the volume expansion caused by the transition from WO_(3)to WS-2can force the vertical growth of WS_(2).This hybrid film shows excellent electrochemical properties,such as high specific capacitance and high rate performance.Soft actuators based on the WS_(2)/HDGN/CNT films show good actuating performance,including stability and reconfigurability.

关键词： CNT Graphene Vertically growth WS_(2) Electrochemical actuators

Realize ultralow-energy-consumption photo-synaptic device based on a single(Al,Ga)N nanowire for neuromorphic computing

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nano Research 2024年第3期17卷 1933-1941页

作者： Xiushuo Gu Min Zhou Yukun Zhao Qianyi Zhang Jianya Zhang Yonglin Huang Shulong Lu College of Electronic and Optical Engineering&College of Flexible Electronics(Future technology) Nanjing University of Posts and TelecommunicationsNanjing 210023China Key Lab of nanodevices and Applications Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO)Chinese Academy of Sciences(CAS)Suzhou 215123China school of nano-Tech and nano-bionics University of Science and Technology of ChinaHefei 230026China Jiangsu Key Laboratory of Micro and nano Heat Fluid Flow technology and Energy Application School of Physical Science and TechnologySuzhou University of Science and TechnologySuzhou 215009China

The rapid development of artificial intelligence poses an urgent need for low-energy-consumption and small-sized artificial photonic synapses.Here,it is pretty novel to demonstrate a light-stimulated synaptic device based on a single(Al,Ga)N nanowire successfully.Thanks to the presence of vacancy defects in the single nanowire,the artificial synaptic device can simulate multiple functions of biological synapses under stimulation of both 310 and 365 nm light photons,including paired-pulse facilitation,spike timing dependent plasticity,and memory learning capabilities.The energy consumption of artificial synaptic device can be reduced as little as 5.58×10^(-13) J,which is close to that of the biological synapse in human brain.Furthermore,the synaptic device is demonstrated to have the high stability for both long-time stimulation and long-time storage.Based on the experimental conductance of long-term potentiation and long-term depression,the simulated three-layer neural network can achieve a high recognition rate of 92%after only 10 training epochs.With a brain-like behavior,the single-nanowire-based synaptic devices can promote the development of visual neuromorphic computing technology and artificial intelligence systems requiring ultralow energy consumption.

关键词： single(Al Ga)N nanowire light-stimulated synaptic device low-energy-consumption neural network

Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by Fe doped GaN substrate

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Science China(Information Sciences) 2024年第6期67卷 461-462页

作者： Xiao WANG Zhi-Yu LIN Yuan-Hang SUN Long YUE Yu-Min ZHANG Jian-Feng WANG Ke XU school of nano-Tech and nano-bionics University of Science and Technology of China Suzhou Institute of nano-tech and nano-bionics Chinese Academy of Sciences Information Materials Research Department Suzhou laboratory Suzhou nanowin Science and technology Co. Ltd. Jiangsu Institute of Advanced Semiconductors

In the process of homoepitaxy AlGaN/GaN heterojunction by metal-organic chemical vapor deposition (MOCVD) on free-standing substrates,Si impurities from the air and reaction chamber accumulate at the regrowth interfac...

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A multifunctional flexible sensor based on PI-MXene/SrTiO_(3) hybrid aerogel for tactile perception

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The Innovation 2024年第3期5卷 44-54页

作者： Shihao Deng Yue Li Shengzhao Li Shen Yuan Hao Zhu Ju Bai Jingyi Xu Lu Peng Tie Li Ting Zhang nano Science and technology Institute University of Science and Technology of China(USTC)Suzhou 215123China i-lab Nano-X Vacuum Interconnected WorkstationKey Laboratory of Multifunctional Nanomaterials and Smart SystemsSuzhou Institute of Nano-Tech and Nano-Bionics(SINANO)Chinese Academy of Sciences(CAS)Suzhou 215123China school of nano-Tech and nano-bionics University of Science and Technology of China(USTC)Hefei 230026China Jiangxi Institute of nanotechnology 278 Luozhu RoadXiaolan Economic and Technological Development ZoneNanchang 330200China

The inadequacy of tactile perception systems in humanoid robotic manipulators limits the breadth of available robotic applications.Here,we designed a multifunctional flexible tactile sensor for robotic fingers that provides capabilities similar to those of human skin sensing modalities.This sensor utilizes a novel PI-MXene/SrTiO_(3) hybrid aerogel developed as a sensing unit with the additional abilities of electromagnetic transmission and thermal insulation to adapt to certain complex environments.Moreover,polyimide(PI)provides a high-strength skeleton,MXene realizes a pressure-sensing function,and MXene/SrTiO_(3) achieves both thermoelectric and infrared radiation response behaviors.Furthermore,via the pressure response mechanism and unsteady-state heat transfer,these aerogel-derived flexible sensors realize multimodal sensing and recognition capabilities with minimal cross-coupling.They can differentiate among 13 types of hardness and four types of material from objects with accuracies of 94%and 85%,respectively,using a decision tree algorithm.In addition,based on the infrared radiation-sensing function,a sensory array was assembled,and different shapes of objects were successfully recognized.These findings demonstrate that this PI-MXene/SrTiO_(3) aerogel provides a new concept for expanding the multifunctionality of flexible sensors such that the manipulator can more closely reach the tactile level of the human hand.This advancement reduces the difficulty of integrating humanoid robots and provides a new breadth of application scenarios for their possibility.

关键词： utilize integrating insulation

Palladium single atoms from melting nanoparticles on WO_(3-x) for boosted hydrogen evolution reaction

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Journal of Energy Chemistry 2024年第4期91卷 637-644页

作者： Zhongmiao Gong Zhigang Chen Hao Li Guang Yang Min Yuan Zhiyun Li Xueying Wan Yi Cui school of nano-Tech and nano-bionics University of Science and Technology of ChinaHefei 230026AnhuiChina i-lab Vacuum Interconnected Nanotech WorkstationSuzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123JiangsuChina school of Materials Science and Engineering Chongqing University of TechnologyChongqing 400054China Key Laboratory of Precision and Intelligent Chemistry School of Chemistry and Materials ScienceHefei National Research Center for Physical Sciences at the MicroscaleNational Synchrotron Radiation LaboratorySchool of Nuclear Science and TechnologyUniversity of Science and Technology of ChinaHefei 230026AnhuiChina

Surface-supported isolated atoms in single-atom catalysts(SACs)grant maximum utilization of metals in heterogeneous catalysis.Herein,we report a feasible pyrolysis strategy to synthesize Pd single atoms by thermally melting Pd nanoparticles on an oxygen-vacancy-rich tungsten-oxide matrix at reduction atmosphere.Near ambient pressure X-ray photoelectron spectroscopy was used to monitor the formation of zero-valence Pd single atoms and the increased metallic feature of WO_(3-x)substrate.Accordingly,the as-obtained zero-valence Pd single-atom catalyst exhibits a markedly boosted HER activity with a low overpotential(η_(10)=70 mV)at the current density of 10 mA/cm2and a small Tafel slope(b=68 mV/dec),nearly 150 mV and a 3,0-fold enhancement than those of Pd nanoparticles(η_(10)=220 mV,b=133 mV/dec)under the same conditions.In addition,quasi in situ XPS results suggest the hydrogen spillover effect is more likely to occur on Pd single atoms during the electrochemical process.Our work may pave an interesting route for the rational design of highly-efficient single-atom catalysts,and the elucidation of corresponding enhanced reaction mechanisms by the utilization of advanced characterization techniques.

关键词： Pd WO_(3-x) Single-atom catalysts NAP-XPS HER

Large-Area Gravure-Printed AgNWs Electrode on Water/Oxygen Barrier Substrate for Long-Term Stable Large-Area Flexible Organic Solar Cells

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Chinese Journal of Chemistry 2024年第5期42卷 478-484页

作者： Hao Wang Yaqin Pan Yunfei Han Zhuo Chen Tianyu Liu Lianping Zhang Qun Luo Chang-Qi Ma Printable Electronics Research Center & i-Lab Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of Sciences (CAS)SuzhouJiangsu215123 China nano Science and technology Institute University of Science and Technology of China166 Ren Ai RoadSEID SIPSuzhouJiangsu215123 China

Large-area AgNWs electrodes(25 cm×10 cm)were fabricated through roll-to-roll printing on the polyvinyl alcohol(PVA)modified water and oxygen barrier substrate.The modification of the barrier film with PVA improved the wettability of silver nanowires on the barrier films and led to the formation of homogenous large-area AgNWs networks.The mechanical flexibility,especially the adhesion force between the silver electrode and the barrier film substrate was dramatically improved through PVA modification.The efficiency of 13.51%for the flexible OSCs with an area of 0.64 cm2 was achieved based on the PET/barrier film/PVA/AgNWs electrode.The long-term stability showed the flexible OSCs based on the PET/barrier film/PVA/AgNWs electrode have a significantly improved stability relative to the device on PET/AgNWs electrode,and comparable air stability as the rigid device with glass/ITO device.The unencapsulated devices maintained nearly 50%of the original efficiency after storage for 600 h in air.After a simple top encapsulation,the flexible devices remained at 60%of the initial efficiency after 2000 h in the air.Therefore,the flexible AgNWs electrode based on the barrier film would have the potential to improve the air storage stability of organic flexible solar cells.

关键词： Flexible organic solar cell AgNWs electrode Air storage stability Barrier films substrate Energy conversion Flexible electronics Interface

Electrical properties and structural optimization of GaN/InGaN/GaN tunnel junctions grown by molecular beam epitaxy

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Journal of Semiconductors 2024年第1期45卷 48-54页

作者： Jun Fang Fan Zhang Wenxian Yang Aiqin Tian Jianping Liu Shulong Lu Hui Yang school of nano-Tech and nano-bionics University of Science and Technology of ChinaHefei 230026China Suzhou Institute of nano-Tech and nano-bionics Chinese Academy of SciencesSuzhou 215123China

The InGaN films and GaN/InGaN/GaN tunnel junctions(TJs)were grown on GaN templates with plasma-assisted molecular beam epitaxy.As the In content increases,the quality of InGaN films grown on GaN templates decreases and the surface roughness of the samples increases.V-pits and trench defects were not found in the AFM images.p++-GaN/InGaN/n++-GaN TJs were investigated for various In content,InGaN thicknesses and doping concentration in the InGaN insert layer.The InGaN insert layer can promote good interband tunneling in GaN/InGaN/GaN TJ and significantly reduce operating voltage when doping is sufficiently high.The current density increases with increasing In content for the 3 nm InGaN insert layer,which is achieved by reducing the depletion zone width and the height of the potential barrier.At a forward current density of 500 A/cm^(2),the measured voltage was 4.31 V and the differential resistance was measured to be 3.75×10^(−3)Ω·cm^(2)for the device with a 3 nm p++-In_(0.35)Ga_(0.65)N insert layer.When the thickness of the In_(0.35)Ga_(0.65)N layer is closer to the“balanced”thickness,the TJ current density is higher.If the thickness is too high or too low,the width of the depletion zone will increase and the current density will decrease.The undoped InGaN layer has a better performance than n-type doping in the TJ.Polarization-engineered tunnel junctions can enhance the functionality and performance of electronic and optoelectronic devices.

关键词： GaN/InGaN/GaN tunnel junctions polarization-engineering molecular beam epitaxy