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Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline𝛽β-Ga_(2)O_(3)thin film on SiC

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Fundamental research 2021年第6期1卷 691-696页

作者： Wenhui Xu Tiangui You Yibo Wang Zhenghao Shen Kang Liu Lianghui Zhang Huarui Sun Ruijie Qian Zhenghua An Fengwen Mu Tadatomo Suga Genquan Han Xin Ou Yue Hao Xi Wang State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian UniversityXi’an 710071China school of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of TechnologyShenzhen 518055China Department of Physics State Key Laboratory of Surface PhysicsInstitute of Nanoelectronic Devices and Quantum ComputingFudan UniversityShanghai 200433China High-Frequency High-Voltage Device and integrated circuits R&D center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Collaborative research center Meisei UniversityHinoJapan center of Materials Science and Optoelectronics engineering University of Chinese Academy of SciencesBeijing 100049China

The semiconductor,β-Ga_(2)O_(3)is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap(∼4.9 eV)and large Baliga’s figure of ***,the thermal conductivity of𝛽β-Ga_(2)O_(3)is much lower than that of other wide/ultra-wide bandgap semiconductors,such as SiC and GaN,which results in the deterioration of𝛽β-Ga_(2)O_(3)-based device performance and reliability due to *** overcome this problem,a scalable thermal management strategy was proposed by heterogeneously integrating wafer-scale single-crystalline𝛽β-Ga_(2)O_(3)thin films on a highly thermally conductive SiC *** of the transferred𝛽β-Ga_(2)O_(3)thin film indicated a uniform thickness to within±2.01%,a smooth surface with a roughness of 0.2 nm,and good crystalline quality with an X-ray rocking curves(XRC)full width at half maximum of 80 *** thermoreflectance measurements were employed to investigate the thermal *** thermal performance of the fabricated𝛽β-Ga_(2)O_(3)/SiC heterostructure was effectively improved in comparison with that of the𝛽β-Ga_(2)O_(3)bulk wafer,and the effective thermal boundary resistance could be further reduced to 7.5 m 2 K/GW by a post-annealing *** barrier diodes(SBDs)were fabricated on both a𝛽β-Ga_(2)O_(3)/SiC heterostructured material and a𝛽β-Ga_(2)O_(3)bulk *** thermal imaging revealed the temperature increase of the SBDs on𝛽β-Ga_(2)O_(3)/SiC to be one quarter that on the𝛽β-Ga_(2)O_(3)bulk wafer with the same applied power,which suggests that the combination of the𝛽-Ga_(2)O_(3)thin film and SiC substrate with high thermal conductivity promotes heat dissipation in𝛽β-Ga_(2)O_(3)-based devices.

关键词： Thermal management Heterogeneous integration Wafer scale𝛽β-Ga_(2)O_(3)on SiC Ion-cutting technique Schottky barrier diodes(SBDs) Transient thermoreflectance(TTR) measurements

Ultra Dense Satellite-Enabled 6G Networks:Resource Optimization and Interference Management

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中国通信:英文版 2023年第10期20卷 262-275页

作者： Xiangnan Liu Haijun Zhang Min Sheng Wei Li Saba Al-Rubaye Keping Long school of Computer&Communication engineering University of Science and Technology BeijingBeijing 100083China Beijing engineering and Technology research center for Convergence Networks and Ubiquitous Services University of Science and Technology BeijingBeijing 100083China school of Telecommunications engineering Xidian UniversityXi’an 710071China State Radio Monitoring center of China Beijing 100037China school of Aerospace Transport and Manufacturing Cranfield UniversityMK430ALUK

With the evolution of the sixth generation(6G)mobile communication technology,ample attention has gone to the integrated terrestrial-satellite *** paper notes that four typical application scenarios of integrated terrestrial-satellite networks are integrated into ultra dense satellite-enabled 6G networks *** the subchannel and power allocation schemes for the downlink of the ultra dense satellite-enabled 6G heterogeneous networks are *** mobile edge computing(SMEC)with edge caching in three-layer heterogeneous networks serves to reduce the link traffic of ***,a scheme for interference management is presented,involving quality-of-service(QoS)and co-tier/cross-tier interference *** simulation results show that the proposed schemes can significantly increase the total capacity of ultra dense satellite-enabled 6G heterogeneous networks.

关键词： satellite-enabled 6G networks network architecture resource optimization interference management

Gate-regulated transition temperatures for electron hopping behaviours in silicon junctionless nanowire transistors

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Journal of Semiconductors 2020年第7期41卷 44-48页

作者： Xinyu Wu Weihua Han Xiaosong Zhao Yangyan Guo Xiaodi Zhang Fuhua Yang school of microelectronics University of Chinese Academy of SciencesBeijing 100049China engineering research center for Semiconductor integrated Technology Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China

We investigate gate-regulated transition temperatures for electron hopping behaviours through discrete ionized dopant atoms in silicon junctionless nanowire *** demonstrate that the localization length of the wave function in the spatial distribution is able to be manipulated by the gate electric *** transition temperatures regulated as the function of the localization length and the density of states near the Fermi energy level allow us to understand the electron hopping behaviours under the influence of thermal activation energy and Coulomb interaction *** is useful for future quantum information processing by single dopant atoms in silicon.

关键词： silicon junctionless nanowire transistor discrete dopant atoms gate regulation transition temperatures

In situ probing of cell-cell communications with surface- enhanced Raman scattering （SERS） nanoprobes and microfluidic networks for screening of immunotherapeutic drugs

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Nano research 2017年第2期10卷 584-594页

作者： Lei Wu Zhuyuan Wang Yizhi Zhang Jiayuan Fei Hui Chen Shenfei Zong Yiping Cui Advanced Photonics center School of Electronic Science and Engineering Southeast University Sipailou 2# Nanjing 210096 China

Discovering novel drugs for cancer immunotherapy requires a robust in vitro drug screening platform that allows for straightforward probing of cell-ceil communications. Here, we combined surface-enhanced Raman scattering （SERS） nanoprobes with microfluidic networks to monitor in situ the cancer-immune system intercellular communications. The microfluidic platform links up immune cells with cancer cells, where the cancer-cell secretions act as signaling mediators. First, gold@silver core--shell nanorods were employed to fabricate SERS immunoprobes for analysis of the signaling molecules. Multiple cancer secretions in a tumor microenvironment were quantitatively analyzed by a SERS-assisted three-dimensional （3D） barcode immunoassay with high sensitivity （1 ng/mL）. Second, in an on-chip cell proliferation assay, multiple immunosuppressive proteins secreted by cancer cells were found to inhibit activation of immune cells, indicating that the platform simulates the physiological process of cancer-immune system communications. Furthermore, potential drug candidates were tested on this platform. A quantitative SERS immunoassay was performed to evaluate drug efficacy at regulating the secretion behavior of cancer cells and the activity of immune cells. This assay showed the suitability of this platform for in vitro drug screening. It is expected that the fully integrated and highly automated SERS-microfluidic platform will become a powerful analytical tool for probing intercellular communications and should accelerate the discovery and clinical validation of novel druKs.

关键词： cell-cell communication microfluidic chip surface-enhanced Raman scattering (SERS) barcode immunoassay drug discovery

An integrated strategy towards the facile synthesis of core-shell SiC-derived carbon@N-doped carbon for high-performance supercapacitors

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Journal of Energy Chemistry 2021年第5期30卷 512-521页

作者： Zhongya Pang Guangshi Li Xingli Zou Chenteng Sun Conghui Hu Wei Tang Li Ji Hsien-Yi Hsu Qian Xu Xionggang Lu State Key Laboratory of Advanced Special Steel&Shanghai Key Laboratory of Advanced Ferrometallurgy&school of Materials Science and engineering Shanghai UniversityShanghai 200444China State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China school of Energy and Environment&Department of Materials Science and engineering City University of Hong KongKowloon Tong 999077Hong KongChina Shenzhen research Institute of City University of Hong Kong Shenzhen 518057GuangdongChina

Porous active core-shell carbon material with excellent synergistic effect has been regarded as a prospective material for ***,we report an integrated method for the facile synthesis of carbide-derived carbon(CDC)encapsulated with porous N-doped carbon(CDC@NC)towards highperformance ***(PDA)as nitrogen and carbon sources was simply coated on SiC nanospheres to form SiC@PDA,which was then directly transformed into CDC@NC via a onestep molten salt electro-etching/in-situ doping *** synthesized CDC@NC with hierarchically porous structure has a high specific surface area of 1191 m^(2) g^(-1).The CDC core and NC shell are typical amorphous carbon and more ordered N-doped carbon,*** from its unique dual porous structures,the CDC@NC demonstrates high specific capacitances of 255 and 193 F g^(-1) at 0.5 and20 A g^(-1),*** reaction mechanism of the electro-etching/in-situ doping process has also been investigated through experimental characterizations and theoretical density functional theory *** is suggested that the molten salt electro-etching/in-situ doping strategy is promising for the synthesis of active core-shell porous carbon materials with synergistic properties for supercapacitors without the need for additional doping/activation processes.

关键词： Molten salt Electrochemical etching Core-shell structure Porous carbon In-situ nitrogen doping Supercapacitors

Self-selective memristor-enabled in-memory search for highly efficient data mining

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InfoMat 2023年第5期5卷 121-133页

作者： Ling Yang Xiaodi Huang Yi Li Houji Zhou Yingjie Yu Han Bao Jiancong Li Shengguang Ren Feng Wang Lei Ye Yuhui He Jia Chen Guiyou Pu Xiang Li Xiangshui Miao school of integrated circuits Hubei Key Laboratory for Advanced MemoriesHuazhong University of Science and TechnologyWuhanthe People's Republic of China Hubei Yangtze Memory Laboratories Wuhanthe People's Republic of China InnoHK centers AI Chip Center for Emerging Smart SystemsHong Kongthe People's Republic of China Huawei Technologies Co. Ltd.Shenzhenthe People's Republic of China

Similarity search,that is,finding similar items in massive data,is a fundamental computing problem in many fields such as data mining and information ***,for large-scale and high-dimension data,it suffers from high computational complexity,requiring tremendous computation ***,based on the low-power self-selective memristors,for the first time,we propose an in-memory search(IMS)system with two innovative ***,by exploiting the natural distribution law of the devices resistance,a hardware locality sensitive hashing encoder has been designed to transform the realvalued vectors into more efficient binary ***,a compact memristive ternary content addressable memory is developed to calculate the Hamming distances between the binary codes in *** IMS system demonstrated a 168energy efficiency improvement over all-transistors counterparts in clustering and classification tasks,while achieving a software-comparable accuracy,thus providing a low-complexity and low-power solution for in-memory data mining applications.

关键词： in-memory search self-selective memristor similarity search ternary content addressable memory

Applications of MXenes in human-like sensors and actuators

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Nano research 2023年第4期16卷 5767-5795页

作者： Jinbo Pang Songang Peng Chongyang Hou Xiao Wang Ting Wang Yu Cao Weijia Zhou Ding Sun Kai Wang Mark H.Rümmeli Gianaurelio Cuniberti Hong Liu Institute for Advanced Interdisciplinary research(iAIR) Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of ShandongUniversity of JinanJinan 250022China Institute for Materials Science and Max Bergmann center of Biomaterials Technische Universität DresdenDresden 01069Germany center for Advancing Electronics Dresden Technische Universität DresdenDresden 01069Germany Dresden center for Computational Materials Science Technische Universität DresdenDresden 01062Germany Dresden center for Intelligent Materials(GCL DCIM) Technische Universität DresdenDresden 01062Germany High-Frequency High-Voltage Device and integrated circuits R&D center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Key Laboratory of Microelectronic Devices&integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Shenzhen Key Laboratory of Nanobiomechanics Shenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhen 518055China State Key Laboratory of Biobased Material and Green Papermaking Qilu University of TechnologyShandong Academy of SciencesJinan 250353China school of Bioengineering Qilu University of TechnologyShandong Academy of ScienceJinan 250353China Key Laboratory of Modern Power System Simulation and Control&Renewable Energy Technology(Ministry of Education) Northeast Electric Power UniversityJilin 132012China school of Electrical engineering Northeast Electric Power UniversityJilin 132012China school of Electrical engineering Weihai Innovation Research InstituteQingdao UniversityQingdao 266000China school of Electrical and Computer engineering Jilin Jianzhu UniversityChangchun 130118China Institute for Complex Materials Leibniz Institute for Solid State and Materials Research Dresden(IFW Dresden)20 Helmholtz StrasseDresden 01069Germany College of Energy Soochow Institute for Energy and Materials Innovations Soochow UniversitySuzhou 215006China Key L

Human beings perceive the world through the senses of sight,hearing,smell,taste,touch,space,and *** first five senses are prerequisites for people to *** sensing organs upload information to the nervous systems,including the brain,for interpreting the surrounding ***,the brain sends commands to muscles reflexively to react to stimuli,including light,gas,chemicals,sound,and ***,as an emerging two-dimensional material,has been intensively adopted in the applications of various sensors and *** this review,we update the sensors to mimic five primary senses and actuators for stimulating muscles,which employ MXene-based film,membrane,and composite with other functional ***,a brief introduction is delivered for the structure,properties,and synthesis methods of ***,we feed the readers the recent reports on the MXene-derived image sensors as artificial retinas,gas sensors,chemical biosensors,acoustic devices,and tactile sensors for electronic ***,the actuators of MXene-based composite are ***,future opportunities are given to MXene research based on the requirements of artificial intelligence and humanoid robot,which may induce prospects in accompanying healthcare and biomedical engineering applications.

关键词： MXenes sensors actuators gas sensors biosensors tactile sensors sound sensors artificial retina

Top gate engineering of field-effect transistors based on wafer-scale two-dimensional semiconductors

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Journal of Materials Science & Technology 2022年第11期106卷 243-248页

作者： Jingyi Ma Xinyu Chen Yaochen Sheng Ling Tong Xiaojiao Guo Minxing Zhang Chen Luo Lingyi Zong Yin Xia Chuming Sheng Yin Wang Saifei Gou Xinyu Wang Xing Wu Peng Zhou David Wei Zhang Chenjian Wu Wenzhong Bao State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai200433China In Situ Devices center Shanghai Key Laboratory of Multidimensional Information ProcessingEast China Normal UniversityShanghai 200241China school of Electronic Information Soochow UniversitySuzhou215006China

The investigation of two-dimensional(2D)materials has advanced into practical device applications,such as cascaded logic ***,incompatible electrical properties and inappropriate logic levels remain enormous *** this work,a doping-free strategy is investigated by top gated(TG)MoS_(2) field-effect transistors(FETs)using various metal gates(Au,Cu,Ag,and Al).These metals with different work functions provide a convenient tuning knob for controlling threshold voltage(V_(th))for MoS_(2) *** instance,the Al electrode can create an extra electron doping(n-doping)behavior in the MoS_(2) TG-FETs due to a dipole effect at the gate-dielectric *** this work,by achieving matched electrical properties for the load transistor and the driver transistor in an inverter circuit,we successfully demonstrate wafer-scale MoS_(2) inverter arrays with an optimized inverter switching threshold voltage(V_(M))of 1.5 V and a DC voltage gain of 27 at a supply voltage(V_(DD))of 3 *** work offers a novel scheme for the fabrication of fully integrated multistage logic circuits based on wafer-scale MoS_(2) film.

关键词： Two-dimensional semiconductor MoS_(2) Top gate Field effect transistor Logic inverter

Emerging Internet of Things driven carbon nanotubes-based devices

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Nano research 2022年第5期15卷 4613-4637页

作者： Shu Zhang Jinbo Pang Yufen Li Feng Yang Thomas Gemming Kai Wang Xiao Wang Songang Peng Xiaoyan Liu Bin Chang Hong Liu Weijia Zhou Gianaurelio Cuniberti Mark HRümmeli Collaborative Innovation center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong Institute for Advanced Interdisciplinary Research(iAIR)University of JinanJinan 250022China Department of Chemistry Guangdong Provincial Key Laboratory of CatalysisSouthern University of Science and TechnologyShenzhen 518055China Leibniz Institute for Solid State and Materials research Dresden P.O.Box 270116Dresden D-01171Germany State Key Laboratory of Crystal Materials Center of Bio&Micro/Nano Functional MaterialsShandong University27 Shandanan RoadJinan 250100China school of Electrical engineering Qingdao UniversityQingdao 266071China Shenzhen Institutes of Advanced Technology Chinese Academy of Sciences 1068 Xueyuan AvenueShenzhen University TownShenzhen 518055China High-Frequency High-Voltage Device and integrated circuits R&D center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Key Laboratory of Microelectronic Devices&integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China school of Chemistry and Chemical engineering University of JinanJinan 250022China College of Energy Soochow Institute for Energy and Materials InnovationsSoochow UniversitySuzhou 215006China Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province Soochow UniversitySuzhou 215006China Centre of Polymer and Carbon Materials Polish Academy of SciencesM.Curie Sklodowskiej 34Zabrze 41-819Poland Institute of Environmental Technology(CEET) VSB-Technical University of Ostrava17.Listopadu 15Ostrava 70833Czech Republic Dresden center for Computational Materials Science Technische Universität DresdenDresden 01062Germany Dresden center for Intelligent Materials(GCL DCIM) Technische Universität DresdenDresden 01062Germany Institute for Materials Science and Max Bergmann center of Biomaterials Technische Universität DresdenDresden 01069Germany center for Advancing Electronics D

Carbon nanotubes(CNTs)have attracted great attentions in the field of electronics,sensors,healthcare,and energy *** emerging applications have driven the carbon nanotube research in a rapid ***,the structure control over CNTs has inspired an intensive research vortex due to the high promises in electronic and optical device ***,this in-depth review is anticipated to provide insights into the controllable synthesis and applications of high-quality ***,the general synthesis and post-purification of CNTs are briefly ***,the state-of-the-art electronic device applications are discussed,including field-effect transistors,gas sensors,DNA biosensors,and pressure ***,the optical sensors are delivered based on the *** addition,energy applications of CNTs are discussed such as thermoelectric energy ***,future opportunities are proposed for the Internet of Things(IoT)oriented sensors,data processing,and artificial intelligence.

关键词： carbon nanotubes electronics sensors electronic skins Internet of Things artificial intelligence