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Ferroelectric-controlled graphene plasmonic surfaces for all-optical neuromorphic vision

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Science China(Technological Sciences) 2024年第3期67卷 765-773页

作者： CHEN JianBo LIU Yu LI ShangDong LIN Lin LI YaDong HUANG Wen GUO JunXiong school of Electronic Information and Electrical engineering Institute for Advanced StudyChengdu UniversityChengdu 610106China school of integrated circuits Tsinghua UniversityBeijing 100084China school of integrated circuits(National Exemplary schoolof microelectronics) Universityof Electronic Science and Technologyof China Chengdu 610054China Jincheng research Institute of Opto-mechatronics Industry Jincheng 048000China Shanxi Key Laboratory of Advanced Semiconductor Optoelectronic Devices and integrated Systems Jincheng 048000China engineering research center of Digital Imaging and Display Ministry of EducationSoochow UniversitySuzhou 215006China

Artificial visual systems can recognize desired objects and information from complex environments, and are therefore highly desired for pattern recognition, object detection, and imaging applications. However, state-of-the-art artificial visual systems with high recognition performances that typically consist of electronic devices face the challenges of requiring huge storage space and high power consumption owing to redundant data. Here, we report a terahertz(THz) frequency-selective surface using a graphene split-ring resonator driven by ferroelectric polarization for efficient visual system applications. The downward polarization of the ferroelectric material offers an ultrahigh electrostatic field for doping p-type graphene with an anticipated Fermi level. By optimizing the geometric parameters of the devices and modulating the carrier behaviors of graphene, our plasmonic devices exhibit a tunable spectral response in a range of 1.7–6.0 THz with continuous transmission values. The alloptical neural network using graphene plasmonic surfaces designed in this study exhibited excellent performance in visual preprocessing and convolutional filtering and achieved an ultrahigh recognition accuracy of up to 99.3% in training the Modified National Institute of Standards and Technology(MNIST) handwritten digit dataset. These features demonstrate the great potential of graphene plasmonic devices for future smart artificial vision systems.

关键词： graphene plasmon ferroelectric frequency selective surface artificial vision system

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Improvement of Ga_(2)O_(3)vertical Schottky barrier diode by constructing NiO/Ga_(2)O_(3)heterojunction

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Journal of Semiconductors 2024年第4期45卷 63-68页

作者： Xueqiang Ji Jinjin Wang Song Qi Yijie Liang Shengrun Hu Haochen Zheng Sai Zhang Jianying Yue Xiaohui Qi Shan Li Zeng Liu Lei Shu Weihua Tang Peigang Li school of integrated circuits&State Key Laboratory of Information Photonics and Optical communications Beijing University of Posts and TelecommunicationsBeijing 100876China College of integrated Circuit Science and engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China Beijing microelectronics Technology Institute Beijing 100076China

The high critical electric field strength of Ga_(2)O_(3)enables higher operating voltages and reduced switching losses in power electronic *** Schottky metals and epitaxial films are essential for further enhancing device *** this work,the fabrication of vertical Ga_(2)O_(3)barrier diodes with three different barrier metals was carried out on an n--Ga_(2)O_(3)homogeneous epitaxial film deposited on an n+-β-Ga_(2)O_(3)substrate by metal-organic chemical vapor deposition,excluding the use of edge *** ideal factor,barrier height,specific on-resistance,and breakdown voltage characteristics of all devices were investigated at room *** addition,the vertical Ga_(2)O_(3)barrier diodes achieve a higher breakdown volt-age and exhibit a reverse leakage as low as 4.82×10^(-8)A/cm^(2)by constructing a NiO/Ga_(2)O_(3)***,Ga_(2)O_(3)power detailed investigations into Schottky barrier metal and NiO/Ga_(2)O_(3)heterojunction of Ga_(2)O_(3)homogeneous epitaxial films are of great research potential in high-efficiency,high-power,and high-reliability applications.

关键词： Ga_(2)O_(3) Schottky barrier diode NiO/Ga_(2)O_(3)heterojunction

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InGaZnO-based photoelectric synaptic devices for neuromorphic computing

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Journal of Semiconductors 2024年第9期45卷 42-47页

作者： Jieru Song Jialin Meng Tianyu Wang Changjin Wan Hao Zhu Qingqing Sun David Wei Zhang Lin Chen school of microelectronics State Key Laboratory of Integrated Chips and SystemsFudan UniversityShanghai 200433China school of integrated circuits Shandong UniversityJinan 250100China National integrated Circuit Innovation center Shanghai 201203China school of Electronic Science and engineering Nanjing UniversityNanjing 210023China Jiashan Fudan Institute Jiashan 314102China

Photoelectric synaptic devices could emulate synaptic behaviors utilizing photoelectric effects and offer promising prospects with their high-speed operation and low crosstalk. In this study, we introduced a novel InGaZnO-based photoelectric memristor. Under both electrical and optical stimulation, the device successfully emulated synaptic characteristics including excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), long-term potentiation (LTP), and long-term depression (LTD). Furthermore, we demonstrated the practical application of our synaptic devices through the recognition of handwritten digits. The devices have successfully shown their ability to modulate synaptic weights effectively through light pulse stimulation, resulting in a recognition accuracy of up to 93.4%. The results illustrated the potential of IGZO-based memristors in neuromorphic computing, particularly their ability to simulate synaptic functionalities and contribute to image recognition tasks.

关键词： InGaZnO artificial synapse neuromorphic computing photoelectric memristor

The Roadmap of 2D Materials and Devices Toward Chips

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Nano-Micro Letters 2024年第6期16卷 343-438页

作者： Anhan Liu Xiaowei Zhang Ziyu Liu Yuning Li Xueyang Peng Xin Li Yue Qin Chen Hu Yanqing Qiu Han Jiang Yang Wang Yifan Li Jun Tang Jun Liu Hao Guo Tao Deng Songang Peng He Tian Tian‑Ling Ren school of integrated circuits and Beijing National research center for Information Science and Technology(BNRist) Tsinghua UniversityBeijing 100049People’s Republic of China school of microelectronics Fudan UniversityShanghai 200433People’s Republic of China State Key Laboratory of Dynamic Measurement Technology Shanxi Province Key Laboratory of Quantum Sensing and Precision MeasurementNorth University of ChinaTaiyuan 030051People’s Republic of China High‑Frequency High‑Voltage Device and integrated circuits R&D center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029People’s Republic of China school of Electronic and Information engineering Beijing Jiaotong UniversityBeijing 100044People’s Republic of China school of integrated circuits University of Chinese Academy of SciencesBeijing 100049People’s Republic of China IMECAS-HKUST-Joint Laboratory of microelectronics Beijing 100029People’s Republic of China

Due to the constraints imposed by physical effects and performance degra certain limitations in sustaining the advancement of Moore’s ***-dimensional(2D)materials have emerged as highly promising candidates for the post-Moore era,offering significant potential in domains such as integrated circuits and next-generation ***,in this review,the progress of 2D semiconductors in process engineering and various electronic applications are summarized.A careful introduction of material synthesis,transistor engineering focused on device configuration,dielectric engineering,contact engineering,and material integration are given *** 2D transistors for certain electronic applications including digital and analog circuits,heterogeneous integration chips,and sensing circuits are ***,several promising applications(artificial intelligence chips and quantum chips)based on specific mechanism devices are ***,the challenges for 2D materials encountered in achieving circuit-level or system-level applications are analyzed,and potential development pathways or roadmaps are further speculated and outlooked.

关键词： Two-dimensional materials Roadmap integrated circuits Post-Moore era

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Mitigating set-stuck failure in 3D phase change memory: substituting square pulses with surge pulses

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Science China(Information Sciences) 2024年第5期67卷 295-301页

作者： Ninghua LI Wang CAI Jun XIANG Hao TONG Weiming CHENG Xiangshui MIAO school of integrated circuits Huazhong University of Science and Technology Hubei Yangtze Memory Laboratories Hubei Institute of Measurement and Testing Technology

In the devices that integrate phase change memory(PCM) and ovonic threshold switching(OTS),the OTS threshold voltage often surpasses the RESET operation voltage of PCM. The conventional application of square pulses hinders the successful completion of the SET operation in these integrated devices. To address this challenge, a novel pulse called the surge pulse is introduced, which comprises a high amplitude pulse for OTS activation and a low amplitude pulse for PCM operation. By employing COMSOL simulation,the operational effectiveness of both square pulses and surge pulses is validated. Test results reveal that using a square pulse to operate the integrated device accelerates the occurrence of SET-stuck failure(SSF).In contrast, the surge pulse enables the integrated device to operate for at least 1000 cycles while preserving the essential cyclic characteristics. Additionally, an investigation into the overshoot component of the surge pulse is conducted, revealing that an increase in overshoot amplitude and pulse width also accelerates the emergence of SSF. By applying the theory of ion migration induced by the electric field, the root cause of SSF in integrated devices is explained, and the accuracy of the theory is validated through the application of a reverse pulse. In summary, this study elucidates the rationality of replacing the square pulse with a surge pulse, presenting a superior approach for operating PCM and OTS integrated devices.

关键词： surge pulse phase change memory (PCM) integration SET-stuck failure (SSF) square pulse

Simultaneous microwave characterization of wafer-level optoelectronic transceiver chips based on photonic sampling and mapping

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Science China(Information Sciences) 2024年第2期67卷 337-338页

作者： Yutong HE Xinhai ZOU Ying XU Zhihui LI Naidi CUI Junbo FENG Yali ZHANG Zhiyao ZHANG Shangjian ZHANG Yong LIU Ninghua ZHU research center for Microwave Photonics State Key Laboratory of Electronic Thin Films and Integrated DevicesSchool of Optoelectronic Science and EngineeringUniversity of Electronic Science and Technology of China Chongqing United microelectronics center (CUMEC) Xiongan Institute of Innovation Chinese Academy of Sciences

Photonic integrated circuits(PICs) promise future parallelism growths of high-performance communication, computation, and offer unprecedented bandwidth scalability with reduced power consumption as a viable replacement for an electrical wire with an optoelectronic transceiver consisting of a transmitter and a receiver integrated on the same wafer.

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High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz

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Science China(Information Sciences) 2024年第6期67卷 459-460页

作者： Hanghai DU Lu HAO Zhihong LIU Zeyu SONG Yachao ZHANG Kui DANG Jin ZHOU Jing NING Zan LI Jincheng ZHANG Yue HAO State Key Laboratory of Wide Bandgap Semiconductor Devices and integrated Technology School of MicroelectronicsXidian University Guangzhou Wide Bandgap Semiconductor Innovation center Guangzhou Institute of TechnologyXidian University State Key Laboratory of integrated Services Networks School of Communication EngineeringXidian University

GaN-based metal-insulator-semiconductor high-electronmobility-transistors (MISHEMTs) have many excellent performances compared with the Si and Ga As counterparts,and are prime candidates for applications in communicat...

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Two-dimensional materials for future information technology: status and prospects

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Science China(Information Sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI Shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei LIAO Bilu LIU Can LIU Chunsen LIU Guanyu LIU Kaihui LIU Liwei LIU Sheng LIU Yuan LIU Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong WANG Hao WANG Haomin WANG Jialong WANG Junyong WANG Wenhui WANG Xingjun WANG Yeliang WANG Yuwei WANG Zhenyu WANG Yao WE... school of Electronic Science and engineering Nanjing University school of integrated circuits Interdisciplinary Research Center for Future Intelligent Chips (Chip-X)Nanjing University school of integrated Circuit Science and engineering Nanjing University of Posts and Telecommunications State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences school of Physics and Key Lab of Quantum Materials and Devices of the Ministry of Education School of Electronic Science & EngineeringSoutheast University College of integrated circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University Suzhou Laboratory State Key Laboratory of integrated Chips and Systems School of MicroelectronicsFudan University Shaoxin Laboratory Department of Applied Physics The Hong Kong Polytechnic University Key Laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and EngineeringHunan University College of integrated circuits Zhejiang University Shenzhen Geim Graphene center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State Key Laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National Key Laboratory of Materials for integrated circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical engineering Hunan University Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China school

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronicdevices optoelectronic devices multi-functional integration

A survey on blockchain-enabled federated learning and its prospects with digital twin

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Digital communications and Networks 2024年第2期10卷 248-264页

作者： Kangde Liu Zheng Yan Xueqin Liang Raimo Kantola Chuangyue Hu State Key Lab on integrated Services Network School of Cyber EngineeringXidian UniversityXi'anChina Department of communications and Networking Aalto UniversityEspooFinland Yangtze Delta Region Blockchain Technology research Institute JiaxingChina

Digital Twin(DT)supports real time analysis and provides a reliable simulation platform in the Internet of Things(IoT).The creation and application of DT hinges on amounts of data,which poses pressure on the application of Artificial Intelligence(AI)for DT descriptions and intelligent *** Learning(FL)is a cutting-edge technology that enables geographically dispersed devices to collaboratively train a shared global model locally rather than relying on a data center to perform model ***,DT can benefit by combining with FL,successfully solving the"data island"problem in traditional ***,FL still faces serious challenges,such as enduring single-point failures,suffering from poison attacks,lacking effective incentive *** the successful deployment of DT,we should tackle the issues caused by *** from industry and academia have recognized the potential of introducing Blockchain Technology(BT)into FL to overcome the challenges faced by FL,where BT acting as a distributed and immutable ledger,can store data in a secure,traceable,and trusted ***,to the best of our knowledge,a comprehensive literature review on this topic is still *** this paper,we review existing works about blockchain-enabled FL and visualize their prospects with *** this end,we first propose evaluation requirements with respect to security,faulttolerance,fairness,efficiency,cost-saving,profitability,and support for ***,we classify existing literature according to the functionalities of BT in FL and analyze their advantages and disadvantages based on the proposed evaluation ***,we discuss open problems in the existing literature and the future of DT supported by blockchain-enabled FL,based on which we further propose some directions for future research.

关键词： Digital twin Artificial intelligence Federated learning Blockchain