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Layer-by-layer epitaxy of multi-layer MoS2 wafers

National Science Review 2022年第6期9卷 153-162页

作者： Qinqin Wang Jian Tang Xiaomei Li Jinpeng Tian Jing Liang Na Li Depeng Ji Lede Xian Yutuo Guo Lu Li Qinghua Zhang Yanbang Chu Zheng Wei Yanchong Zhao Luojun Du Hua Yu Xuedong Bai Lin Gu Kaihui Liu Wei Yang Rong Yang Dongxia Shi Guangyu Zhang Beijing National Laboratory for Condensed Matter physics and Institute of physics Chinese Academy of Sciences school of Physical sciences University of Chinese Academy of Sciences Collaborative Innovation Center of Quantum Matter and school of physics Peking University Songshan Lake materials Laboratory

The 2D semiconductor of MoS2has great potential for advanced electronics technologies beyond silicon.So far, high-quality monolayer MoS2wafers have been available and various demonstrations from individual transistors to integrated circuits have also been shown. In addition to the monolayer, multilayers have narrower band gaps but improved carrier mobilities and current capacities over the monolayer.However, achieving high-quality multi-layer MoS2wafers remains a challenge. Here we report the growth of high-quality multi-layer Mo S2 4-inch wafers via the layer-by-layer epitaxy process. The epitaxy leads to well-defined stacking orders between adjacent epitaxial layers and offers a delicate control of layer numbers up to six. Systematic evaluations on the atomic structures and electronic properties were carried out for achieved wafers with different layer numbers. Significant improvements in device performances were found in thicker-layer field-effect transistors(FETs), as expected. For example, the average field-effect mobility(μFE) at room temperature(RT) can increase from ～80 cm~2·V-1·s-1for monolayers to ～110/145 cm~2·V-1·-1for bilayer/trilayer devices. The highest RT μFEof 234.7 cm~2·V-1·s-1and record-high on-current densities of 1.70 m A·μm-1at Vds= 2V were also achieved in trilayer MoS2FETs with a high on/off ratio of >107. Our work hence moves a step closer to practical applications of 2D MoS2in electronics.

关键词： 2D semiconductor multilayer MoS2 wafer layer-by-layer epitaxy high performance transistors thin film transistors

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Low-Voltage IGZO Field-Effect Ultraviolet Photodiode

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Chinese physics Letters 2024年第6期41卷 156-161,I0001-I0003页

作者：宋双梁会力霍文星张广张永晖王绩梅增霞 Songshan Lake materials Laboratory Dongguan 523808China Institute of physics Chinese Academy of SciencesBeijing 100190China College of physics Liaoning UniversityShenyang 110036China Department of Instruments Science and Technology School of Precision Instrument and Opto-electronics EngineeringTianjin UniversityTianjin 300072China National Key Laboratory of Scattering and Radiation Beijing 100039China school of physics and Optoelectronic Engineering Shandong University of TechnologyZibo 255000China

In the era of Internet of Things(Io Ts),an energy-efficient ultraviolet(UV)photodetector(PD)is highly desirable considering the massive usage scenarios such as environmental sterilization,fire alarm and corona discharge monitoring.So far,common self-powered UV PDs are mainly based on metal-semiconductor heterostructures or p–n heterojunctions,where the limited intrinsic built-in electric field restricts further enhancement of the photoresponsivity.In this work,an extremely low-voltage field-effect UV PD is proposed using a gatedrain shorted amorphous IGZO(a-IGZO)thin film transistor(TFT)architecture.A combined investigation of the experimental measurements and technology computer-aided design(TCAD)simulations suggests that the reverse current(ⅠR)of field-effect diode(FED)is highly related with the threshold voltage(Vth)of the parental TFT,implying an enhancement-mode TFT is preferable to fabricate the field-effect UV PD with low dark current.Driven by a low bias of-0.1 V,decent UV response has been realized including large UV/visible(R_(300)/R_(550))rejection ratio(1.9×10^(3)),low dark current(1.15×10^(-12)A)as well as high photo-to-dark current ratio(PDCR,~10^(3))and responsivity(1.89 A/W).This field-effect photodiode provides a new platform to construct UV PDs with well-balanced photoresponse performance at a low bias,which is attractive for designs of large-scale smart sensor networks with high energy efficiency.

关键词： IGZO attractive ultraviolet

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Percolation-induced resistivity drop in lutetium dihydride with controllable electrical conductivity over six orders of magnitude

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中国科学:物理学、力学、天文学英文版 2023年第9期66卷 102-108页

作者： Ningning Wang Jun Hou Ziyi Liu Tenglong Lu Pengfei Shan Congcong Chai Shifeng Jin Liang Ma Lifen Shi Xiao Wang Youwen Long Yue Liu Hua Zhang Xiaoli Dong Sheng Meng Miao Liu Jinguang Cheng Beijing National Laboratory for Condensed Matter physics and Institute of physics Chinese Academy of SciencesBeijing 100190China school of Physical sciences University of Chinese Academy of SciencesBeijing 100190China Key Laboratory of materials physics Ministry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China Institute of Quantum materials and physics Henan Academy of SciencesZhengzhou 450046China Songshan Lake materials Laboratory Dongguan 523808China Center of materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

The recent report of near-ambient superconductivity in the nitrogen-doped lutetium hydride has attracted considerable attention.Subsequent follow-up studies confirmed the pressure-induced color changes in both N-free and N-doped LuH_(2) but failed to reproduce superconductivity. It remains a puzzle why the samples in the original report exhibited pronounced resistance anomaly reminiscent of the superconducting transition. Here, we show that percolation of metallic grains with high conductivity through the insulating surfaces in cold-pressed LuH_(2) samples can occasionally produce sharp resistance drops, which even display magnetic field and/or current dependences but stay far from zero resistance. The insulating surface of LuH2grain should be attributed to the modification of hydrogen stoichiometry or the contamination by oxygen/nitrogen, resulting in an increase of resistance by over six orders of magnitude. Such an effect is more significant than that discovered recently in LaH_(3±x), which may indicate that LuH_(2) can be a potential superionic conductor. Our results call for caution in asserting the resistivity drops as superconductivity and invalidate the background subtraction in analyzing the corresponding resistance data.

关键词： LuH_(2) percolation resistance drop superconductivity superionic conductor

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Observation of Giant Topological Hall Effect in Room-Temperature Ferromagnet Cr_(0.82)Te

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Chinese physics Letters 2024年第6期41卷 128-140页

作者：苗伟婷甄伟立陆振王恒宁王杰牛群田明亮 Anhui Key Laboratory of Low-energy Quantum materials and Devices High Magnetic Field LaboratoryHFIPSChinese Academy of SciencesHefei 230031China Science Island Branch Graduate School of University of Science and Technology of ChinaHefei 230026China school of physics and Optoelectronic Engineering Anhui UniversityHefei 230601China

Novel magnetic materials with non-trivial magnetic structures have led to exotic magnetic transport properties and significantly promoted the development of spintronics in recent years.Among them is the Crx Tey family,the magnetism of which can persist above room temperature,thus providing an ideal system for potential spintronic applications.Here we report the synthesis of a new compound,Cr_(0.82)Te,which demonstrates a record-high topological Hall effect at room temperature in this family.Cr_(0.82)Te displays soft ferromagnetism below the Curie temperature of 340 K.The magnetic measurement shows an obvious magneto-crystalline anisotropy with the easy axis located in the ab plane.The anomalous Hall effect can be well explained by a dominating skew scattering mechanism.Intriguing,after removing the normal Hall effect and anomalous Hall effect,a topological Hall effect can be observed up to 300 K and reaches up to 1.14μΩ·cm at 10 K,which is superior to most topological magnetic structural materials.This giant topological Hall effect possibly originates from the noncoplanar spin configuration during the spin flop process.Our work extends a new Cr_(x)Te_(y)system with topological non-trivial magnetic structure and broad prospects for spintronics applications in the future.

关键词： mechanism. process. topological

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Highly sensitive humidity sensors based on hexagonal boron nitride nanosheets for contactless sensing

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Nano Research 2023年第7期16卷 10279-10286页

作者： Hang Liu Jinxu Qin Xigui Yang Chaofan Lv Wentao Huang Fukui Li Chuang Zhang Yanran Wu Lin Dong Chongxin Shan Henan Key Laboratory of Diamond Optoelectronic materials and Devices Key Laboratory of Materials PhysicsMinistry of EducationSchool of Physics&MicroelectronicsZhengzhou UniversityZhengzhou 450052China Institute of Quantum materials and physics Henan Academy of SciencesZhengzhou 450046China

Humidity sensors with high sensitivity,rapid response,and facile fabrication process for contactless sensing applications have received considerable attention in recent years.Herein,humidity sensors based on hexagonal boron nitride(h-BN)nanosheets that are synthesized by a facile ultrasonic process have been fabricated,which display an ultrahigh sensitivity of 28,384%at 85%relative humidity(RH),rapid response/recovery time(3.0/5.5 s),and long-term stability in a wide humidity detection range(11%-85%RH),superior to most of the reported humidity sensors.The high sensitivity can be ascribed to the massive hydrophilic functional groups absorbed on the h-BN nanosheet surface.Benefiting from the high humidity sensing performances,contactless Morse code messaging and human writing and speech recognition have been demonstrated.This work demonstrates the great potential of the high-performance h-BN nanosheet-based humidity sensors for future contactless sensing devices.

关键词： boron nitride humidity sensors contactless detection speech recognition

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莫尔超晶格场诱导关联绝缘态的量子振荡

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Science Bulletin 2023年第11期68卷 1127-1133,M0003,M0004页

作者：刘乐褚衍邦杨光袁亚龙吴帆帆季怡汝田金朋杨蓉 Kenji Watanabe Takashi Taniguchi 龙根时东霞刘健鹏沈洁吕力杨威张广宇 Beijing National Laboratory for Condensed Matter physics and Institute of physics Chinese Academy of SciencesBeijing 100190China school of Physical sciences University of Chinese Academy of SciencesBeijing 100190China Songshan Lake materials Laboratory Dongguan 523808China Research Center for Functional materials National Institute for Materials ScienceTsukuba 305-0044Japan International Center for materials Nanoarchitectonics National Institute for Materials ScienceTsukuba 305-0044Japan school of Physical sciences and Technology ShanghaiTech UniversityShanghai 200031China ShanghaiTech Laboratory for Topological physics ShanghaiTech UniversityShanghai 200031China

本文报道了转角双层-双层石墨烯关联绝缘态中的量子振荡行为.作者发现价带半填充处具有谷各向异性的绝缘态会随着磁场周期性振荡,且最大振幅高达150 kΩ.此外,该绝缘态量子振荡行为可以被垂直方向的电场有效调控.振荡频率随着电场增加... 详细信息

本文报道了转角双层-双层石墨烯关联绝缘态中的量子振荡行为.作者发现价带半填充处具有谷各向异性的绝缘态会随着磁场周期性振荡,且最大振幅高达150 kΩ.此外,该绝缘态量子振荡行为可以被垂直方向的电场有效调控.振荡频率随着电场增加线性减小,这表明绝缘态中存在着不断减小的费米面;从振幅变温行为中提取的有效质量随电场变化体现为非线性的行为,但总体保持在0.1me的量级.同样的量子振荡行为也出现在导带半填充处以及非石墨栅极的样品中,表明了该现象的普适性.为了解释该振荡的起源,作者根据实验中提取的与费米面相关的参数构建了反带模型,并通过计算发现能隙中的态密度会随磁场发生振荡,这与实验结果相吻合.本研究表明转角双层-双层石墨烯蕴含着丰富的关联和拓扑现象,是研究凝聚态中的关联物态极好的平台.

关键词：双层石墨烯费米面有效质量凝聚态周期性振荡超晶格振荡频率电场变化

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Direct observation and manipulation of hot electrons at room temperature

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National Science Review 2021年第9期8卷 32-40页

作者： Hailu Wang Fang Wang Hui Xia Peng Wang Tianxin Li Juzhu Li Zhen Wang Jiamin Sun Peisong Wu Jiafu Ye Qiandong Zhuang Zaixing Yang Lan Fu Weida Hu Xiaoshuang Chen Wei Lu State Key Laboratory of Infrared physics Shanghai Institute of Technical Physics Chinese Academy of Sciences University of Chinese Academy of sciences Henan Key Laboratory of Diamond Optoelectronic materials and Devices School of Physics and Engineering Zhengzhou University school of Microelectronics Shandong University Department of physics Lancaster University Department of Electronic materials Engineering Research School of Physics and Engineering The Australian National University

In modern electronics and optoelectronics, hot electron behaviors are highly concerned, as they determine the performance limit of a device or system, like the associated thermal or power constraint of chips and the Shockley-Queisser limit for solar cell efficiency. To date, however, the manipulation of hot electrons has been mostly based on conceptual interpretations rather than a direct observation. The problem arises from a fundamental fact that energy-differential electrons are mixed up in real-space, making it hard to distinguish them from each other by standard measurements. Here we demonstrate a distinct approach to artificially(spatially) separate hot electrons from cold ones in semiconductor nanowire transistors, which thus offers a unique opportunity to observe and modulate electron occupied state, energy, mobility and even path. Such a process is accomplished through the scanning-photocurrent-microscopy measurements by activating the intervalley-scattering events and 1D charge-neutrality rule. Findings here may provide a new degree of freedom in manipulating non-equilibrium electrons for both electronic and optoelectronic applications.

关键词： hot electrons valley transfer photogating scanning photocurrent mapping

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Recent progress in the interaction between energetic particles and tearing modes

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National Science Review 2022年第11期9卷 240-261页

作者： Huishan Cai Ding Li Chinese Academy of sciences Key Laboratory of Geospace Environment School of Nuclear Sciences and TechnologyUniversity of Science and Technology of China Institute of physics Chinese Academy of Sciences Songshan Lake materials Laboratory

The dynamics of energetic particles and tearing modes and the interactions between them are of great significance for magnetically confined fusion plasmas. In this review, we focus on these issues in the context of tokamak plasmas. The interaction between energetic particles and tearing modes is considered from two perspectives:(i) the influence of energetic particles on tearing modes and(ii) the transport of energetic particles by tearing modes. The influence of energetic particles on tearing modes is described on the basis of a general dispersion relation for tearing modes. The effects of energetic particles are considered separately in the outer region and the island region of a tearing mode. The physics mainly results from the modification of the perturbed parallel current by energetic particles without wave–particle resonance. In addition, the resonance between energetic particles and tearing modes is also reviewed. For the transport of energetic particles, transport of both circulating and trapped energetic particles by tearing mode is reviewed. Our descriptions of physical phenomena here are based on an analytical approach, while the experiments and simulations are used to illustrate and confirm our results. Finally, a number of open issues are discussed.

关键词： magnetically confined plasma energetic particle tearing mode transport confinement tokamak

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Data-driven simultaneous vertex and energy reconstruction for large liquid scintillator detectors

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Nuclear Science and Techniques 2023年第6期34卷 103-113页

作者： Gui-Hong Huang Wei Jiang Liang-Jian Wen Yi-Fang Wang Wu-Ming Luo school of Applied physics and materials Wuyi UniversityJiangmen529020China Institute of High Energy physics Chinese Academy of SciencesBeijing100049China school of Physical sciences University of Chinese Academy of ScienceBeijing100049China

High-precision vertex and energy reconstruction are crucial for large liquid scintillator detectors such as that at the Jiangmen Underground Neutrino Observatory(JUNO),especially for the determination of neutrino mass ordering by analyzing the energy spectrum of reactor neutrinos.This paper presents a data-driven method to obtain a more realistic and accurate expected PMT response of positron events in JUNO and develops a simultaneous vertex and energy reconstruction method that combines the charge and time information of PMTs.For the JUNO detector,the impact of the vertex inaccuracy on the energy resolution is approximately 0.6%.

关键词： JUNO Liquid scintillator detector Neutrino experiment Vertex reconstruction Energy reconstruction

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Magneto optics and time resolved terahertz spectrocopy

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Chinese physics B 2018年第7期27卷 112-119页

作者：董涛谌志国王楠林 International Center for Quantum materials School of Physics Peking University Institute of physics Chinese Academy of Sciences

Exploring, manipulating, and understanding new exotic quantum phenomena in condensed-matter systems have gen- erated great interest in the scientific community. Static and time resolved optical spectroscopies after photoexcitations are important experimental tools for probing charge dynamics and quasiparticle excitations in quantum materials. In Syner- getic Extreme Condition User Facility （SECUF）, we shall construct magneto-infrared and terahertz measurement systems and develop a number of ultrafast femtosecond laser based systems, including intense near to mid-infrared pump terahertz probe. In this article, we shall describe several systems to be constructed and developed in the facilities, then present some examples explaining the application of magneto optics and time resolved spectroscopy techniques.

关键词： magneto-optics infrared spectroscopy mid-infrared pump terahertz probe

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