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Physical mechanism of field modulation effects in ion implanted edge termination of vertical GaN Schottky barrier diodes

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Fundamental Research 2022年第4期2卷 629-634页

作者： Ruiyuan Yin Chiachia Li Bin Zhang Jinyan Wang Yunyi Fu Cheng P.Wen Yilong Hao Bo Shen Maojun Wang school of integated circuis Peking UniversityBeijing 100871China Schol of Physics Peking UniversityBejing 10o871China

In this study,the physical properties of F ion-implanted GaN were thoroughly studied,and the related electric-field modulation mechanisms in ion-implanted edge termination were *** electron microscopy *** indicate that the ion-implanted region maintains a single-crystal structure even with the implantation of high-energy F ions,indicating that the high resistivity of the edge termination region is not induced by ***,ion implantation-induced deep levels could compensate the electrons and lead to a highly resistive layer In addition to the bulk ffect,the direct bombardment of high-energy F ions resulted in a rough and nitrogen-deficient surface,which was confirmed via atomic force microscopy(AFM)and X-ray photoelectron spectroscopy,The implanted surface with a large density of nitrogen vacancies can accommodate electrons,and it is more conductive than the bulk in the implanted region,which is validated via spreading resistance profiling and conductive AFM *** reverse bias,the implanted surface can spread the potential in the lateral direction,whereas the acceptor traps capture electrons acting as space charges,shifting the peak electric field into the bulk region in the vertical *** a result,the Schottky barrier diode terminated with high-energy F ion-implanted regions exhibits a breakdown voltage of over 1.2 kv.

关键词： lon implantation Edge termination Electri field modulationeffect GaN Schottky barrier diodes

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Antiferromagnetic spintronics: An overview and outlook

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Fundamental Research 2022年第4期2卷 522-534页

作者： Danrong Xionga Yuhao Jiang Kewen Shi Ao Du Yuxuan Yao Zongxia Guo Daoqian Zhu Kaihua Cao Shouzhong Peng Wenlong Cai Dapeng Zhu Weisheng Zhao Fert Bejing Institute MIT Key Laboratory of SpintronicsSchool of Integated Circuit Science and EngineeringBeihang UniversityBejing 10191China Beihang-Goertek Joint Microelectronics Institute Qingdao Research InstituteBeihang UniversityQingdao 266ooChina

Over the pas few decades,the diversified development of antiferomagnetic spintronics has made antiferomagnets(AFMs)interesting and very *** tough challenges,the applications of AFMs in electronic devices have transitioned from focusing on the interface coupling features to achieving the manipulation and detection of *** AFMs are internally magnetic,taking full use of AFMs for information storage has been the main target of *** this paper,we provide a comprehensive description of AFM spintronics applications from the interface coupling,read-out operations,and writing manipulations *** examine the early use of AFMs in magnetic recordings and conventional magnetoresistive random-access memory(MRAM),and review the latest mechanisms of the manipulation and detection of ***,based on exchange bias(EB)manipulation,a high-performance EB-MRAM is introduced as the next generation of AFM-based memories,which provides an effective method for read-out and writing of AFMs and opens a new era for AFM spintronics.

关键词： Antiferromagnets MRAM Spintronics Spin-orbit torque Exchange bias

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