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science Bulletin 2020年第15期65卷 1252-1259,M0003页

作者：王欣伟肖承诚杨超陈苗根杨声远胡军任召辉潘辉朱文光许祝安陆赟豪 State Key Laboratory of Silicon Materials and school of Materials science and engineering Zhejiang UniversityHangzhou 310027China Departments of Materials and the Thomas Young Centre for Theory and Simulation of Materials Imperial College LondonLondon SW72AZUK Department of Physics China Jiliang University.Hangzhou 310018China Research Laboratory for Quantum Materials Singapore University of Technology and DesignSingapore 487372Singapore school of Physical science and Technology Soochow UniversitySuzhou 215006China Joint Key Laboratory of the Ministry of Education Institute of Applied Physics and Materials EngineeringUniversity of MacaoMacao SARChina ICQD Hefei National Laboratory for Physical Science at the MicroscaleKey Laboratory of Strongly-Coupled Quantum Matter PhysicsChinese Academy of SciencesDepartment of Physicsand Synergetic Innovation Center of Quantum Information and Quantum PhysicsUniversity of Science and Technology of ChinaHefei 230026China Zhejiang Province Key Laboratory of Quantum Technology and Device Department of PhysicsZhejiang UniversityHangzhou 310027China collaborative innovation Centre of advanced microstructures Nanjing UniversityNanjing 210093China

基于磁电效应,通过电场调控材料的磁性能有利于低能耗、高密度存储设备的应用和发展.以前的相关研究大多为通过压电效应或外加电场进行材料磁性的易失性调控,即材料的磁性改变无法在撤掉电场后维持.虽然可以产生自发极化且能在外电场作... 详细信息

基于磁电效应,通过电场调控材料的磁性能有利于低能耗、高密度存储设备的应用和发展.以前的相关研究大多为通过压电效应或外加电场进行材料磁性的易失性调控,即材料的磁性改变无法在撤掉电场后维持.虽然可以产生自发极化且能在外电场作用下改变极化方向的铁电材料为非易失调控提供了优异的平台,但随着材料尺度的减小,其自发极化逐渐减小甚至消失,很难在原子尺度实现电控磁性.二维铁电材料在实验上的成功制备,为实现原子尺度下的非易失调控提供了新的机遇.本文基于第一性原理提出了一种通过二维铁电基底调节分子磁性的方法.研究发现,不仅磁矩大小可以在零或非零之间转换,其易轴也可以在面内或面外之间反转,同时较大的磁各向异性能使其有望实现在室温以上的应用.该结果为二维铁电调控材料磁性的研究提供了新思路.

关键词：铁电材料高密度存储原子尺度自发极化极化方向磁电效应易失性压电效应

Neutron Powder Diffraction Study on the Non-Superconducting Phases of ThFeAsN1-xOx（x=0.15,0.6）Iron Pnictide

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Chinese Physics Letters 2019年第10期36卷 77-80页

作者：毛慧灿胡丙锋夏元华陈喜平王操王志成曹光旱李世亮罗会仟 Department of Physics and center for advanced Quantum Studies Beijing Normal UniversityBeijing 100875 Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190 Key Laboratory of Neutron Physics Institute of Nuclear Physics and ChemistryChina Academy of Engineering PhysicsMianyang 621999 Department of Physics Shandong University of TechnologyZibo 255049 Department of Physics and State Key Lab of Silicon Materials Zhejiang UniversityHangzhou 310027 collaborative innovation Centre of advanced microstructures Nanjing 210093 Songshan Lake Materials Laboratory Dongguan 523808 school of Physical sciences University of Chinese Academy of SciencesBeijing 100190

We use neutron powder diffraction to study the non-superconducting phases of ThFeAsN1-xOx with x = 0.15,*** our previous results of the superconducting phase ThFeAsN with Tc = 30 K,no magnetic transition is observed by cooling down to 6 K,and possible oxygen occupancy at the nitrogen site is shown in the refinement[***.117(2017)57005].Here in the oxygen doped system ThFeAsN1-xOx,two superconducting regions(0≤x≤0.1 and 0.25≤x≤0.55)are identified by transport experiments[***.:***30(2018)255602].However,within the resolution of our neutron powder diffraction experiment,neither the intermediate doping x= 0.15 nor the heavily overdoped compound x = 0.6 shows any magnetic order from 300 K to 4 ***,while it shares the common phenomenon of two superconducting domes as most 1111-type iron-based superconductors,the magneticall.y ordered parent compound may not exist in this nitride family.

关键词： x=0 compound refinement

Memristor-based hyper-chaotic circuit for image encryption

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Chinese Physics B 2020年第11期29卷 259-270页

作者：陈娇娇闫登卫段书凯王丽丹 College of electronic and Information engineering Southwest UniversityChongqing 400715China Chongqing Key Laboratory of Nonlinear Circuits and Intelligent Information Processing Southwest UniversityChongqing 400715China Intelligent Transmission and Control Technology Joint engineering Laboratory Chongqing 400715China Brain-inspired Computing and Intelligent Control Chongqing Key Laboratory Chongqing 400715China Chongqing collaborative innovation center for Brain science Chongqing 400715China school of Artificial Intelligence Southwest UniversityChongqing 400715China

The memristor is a kind of non-linear element with memory function,which can be applied to chaotic systems to increase signal randomness and *** this paper,a new four-dimensional hyper-chaotic system is designed based on a flux controlled memristor model,which can generate complex chaotic *** basic dynamic theory analysis and numerical simulations of the system,such as the stability of equilibrium points,the Lyapunov exponents and dimension,Poincare maps,the power spectrum,and the waveform graph prove that it has rich dynamic ***,the circuit implementation of this system is *** consistency of simulation program with integrated circuit emphasis(SPICE)simulation and numerical analysis proves the ability to generate ***,a new image encryption scheme is designed by using the memristor-based hyper-chaotic system proposed in this *** scheme involves a total of two *** using different security analysis factors,the proposed algorithm is compared with other image encryption schemes,including correlation analysis,information entropy,*** results show that the proposed image encryption scheme has a large key space and presents a better encryption effect.

关键词： memristor SPICE simulation hyper-chaotic system image encryption

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二维材料最新研究进展

物理化学学报 2021年第12期37卷 1-151页

作者：常诚陈伟陈也陈永华陈雨丁峰樊春海范红金范战西龚成宫勇吉何其远洪勋胡晟胡伟达黄维黄元季威李德慧李连忠李强林立凌崇益刘鸣华刘楠刘庄 Kian Ping Loh 马建民缪峰彭海琳邵明飞宋礼苏邵孙硕谭超良唐智勇王定胜王欢王金兰王欣王欣然 Andrew T.S.Wee 魏钟鸣吴宇恩吴忠帅熊杰熊启华徐伟高尹鹏曾海波曾志远翟天佑张晗张辉张其春张铁锐张翔赵立东赵美廷赵伟杰赵运宣周凯歌周兴周喻朱宏伟张华刘忠范 Institute of science and Technology Austria Am Campus 13400 KlosterneuburgAustria Department of Chemistry National University of Singapore3 Science Drive 3117543Singapore Department of Chemistry The Chinese University of Hong KongShatinNew TerritoriesHong KongChina Key Laboratory of Flexible electronics and Institute of advanced Materials Nanjing Tech UniversityNanjing 211816China school of Life sciences Shanghai UniversityShanghai 200444China Centre for Multidimensional Carbon Materials Institute for Basic ScienceUlsan 44919Korea school of Chemistry and Chemical engineering Shanghai Jiao Tong UniversityShanghai 200240China school of Physical and Mathematical sciences Nanyang Technological UniversitySingapore 637371Singapore Department of Chemistry City University of Hong KongKowloonHong KongChina Department of Electrical and Computer engineering and Quantum Technology center University of MarylandCollege ParkMaryland 20742USA school of Materials science and engineering Beihang UniversityBeijing 100191China Department of Materials science and engineering City University of Hong KongKowloonHong KongChina center of advanced Nanocatalysis(CAN) Hefei National Laboratory for Physical Sciences at the MicroscaleDepartment of Applied ChemistryUniversity of Science and Technology of ChinaHefei 230026China College of Chemistry and Chemical engineering State Key Laboratory of Physical Chemistry of Solid SurfacesCollaborative Innovation Center of Chemistry for Energy Materials(iChEM)Xiamen UniversityXiamen361005Fujian ProvinceChina State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083China advanced Research Institute of Multidisciplinary science Beijing Institute of TechnologyBeijing100081China Beijing Key Laboratory of Optoelectronic Functional Materials&Micro-Nano Devices Department of PhysicsRenmin University of ChinaBeijing 100872China school of Optical and electronic Information Wuhan National Laboratory

Research on two-dimensional(2D) materials has been explosively increasing in last seventeen years in varying subjects including condensed matter physics, electronic engineering, materials science, and chemistry since the mechanical exfoliation of graphene in 2004. Starting from graphene, 2D materials now have become a big family with numerous members and diverse categories. The unique structural features and physicochemical properties of 2D materials make them one class of the most appealing candidates for a wide range of potential applications. In particular, we have seen some major breakthroughs made in the field of 2D materials in last five years not only in developing novel synthetic methods and exploring new structures/properties but also in identifying innovative applications and pushing forward commercialisation. In this review, we provide a critical summary on the recent progress made in the field of 2D materials with a particular focus on last five years. After a brief backgroundintroduction, we first discuss the major synthetic methods for 2D materials, including the mechanical exfoliation, liquid exfoliation, vapor phase deposition, and wet-chemical synthesis as well as phase engineering of 2D materials belonging to the field of phase engineering of nanomaterials(PEN). We then introduce the superconducting/optical/magnetic properties and chirality of 2D materials along with newly emerging magic angle 2D superlattices. Following that, the promising applications of 2D materials in electronics, optoelectronics, catalysis, energy storage, solar cells, biomedicine, sensors, environments, etc. are described sequentially. Thereafter, we present the theoretic calculations and simulations of 2D materials. Finally, after concluding the current progress, we provide some personal discussions on the existing challenges and future outlooks in this rapidly developing field.

关键词： Two-dimensional materials Transition metal dichalcogenides Phase engineering of nanomaterials electronics Optoelectronics Catalysis Energy storage and conversion

Single-step-fabricated disordered metasurfaces for enhanced light extraction from LEDs

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Light(science & Applications) 2021年第10期10卷 1840-1848页

作者： Peng Mao Changxu Liu Xiyan Li Mengxia Liu Qiang Chen Min Han Stefan A.Maier Edward H.Sargent Shuang Zhang school of Physics and Astronomy University of BirminghamB152TT BirminghamUK National Laboratory of Solid State microstructures College of Engineering and Applied Sciencesand Collaborative Innovation Centre of Advanced MicrostructuresNanjing UniversityNanjing 210093China Chair in Hybrid Nanosystems Nanoinstitute MunichFaculty of PhysicsLudwigMaximilians-Universitaet Muenchen80539 MuenchenGermany Department of Electrical and Computer engineering University of Toronto35 St.George StreetTorontoON M5S 1A4Canada Key Laboratory of Intelligent Optical Sensing and Manipulation(Nanjing University) Ministry of EducationNanjingChina Department of Physics Imperial College LondonLondon SW72AZUK Department of Physics University of Hong KongHong Kong 999077China Department of Electrical and electronic engineering University of Hong KongHong Kong 999077China

While total internal reflection(TIR)lays the foundation for many important applications,foremost fibre optics that revolutionised information technologies,it is undesirable in some other applications such as light-emitting diodes(LEDs),which are a backbone for energy-efficient light *** the case of LEDs,TIR prevents photons from escaping the constituent high-index *** in material science have led to good efficiencies in generating photons from electron–hole pairs,making light extraction the bottleneck of the overall efficiency of *** recent years,the extraction efficiency has been improved,using nanostructures at the semiconductor/air interface that outcouple trapped photons to the outside ***,the design of geometrical features for light extraction with sizes comparable to or smaller than the optical wavelength always requires sophisticated and timeconsuming fabrication,which causes a gap between lab demonstration and industrial-level *** by lightning bugs,we propose and realise a disordered metasurface for light extraction throughout the visible spectrum,achieved with single-step *** applying such a cost-effective light extraction layer,we improve the external quantum efficiency by a factor of 1.65 for commercialised GaN LEDs,demonstrating a substantial potential for global energy-saving and sustainability.

关键词： light backbone consuming

Modulation of electronic state in copper-intercalated 1T-TaS_(2)

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Nano Research 2022年第5期15卷 4327-4333页

作者： Wenhao Zhang Degong Ding Jingjing Gao Kunliang Bu Zongxiu Wu Li Wang Fangsen Li Wei Wang Xuan Luo Wenjian Lu Chuanhong Jin Yuping Sun Yi Yin Zhejiang Province Key Laboratory of Quantum Technology and Device Department of PhysicsZhejiang UniversityHangzhou 310027China State Key Laboratory of Silicon Materials School of Materials Science and EngineeringZhejiang UniversityHangzhou 310027China Key Laboratory of Materials Physics Institute of Solid State PhysicsHFIPSChinese Academy of SciencesHefei 230031China Vacuum Interconnected Nanotech Workstation(Nano-X) Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO)Chinese Academy of Sciences(CAS)Suzhou 215123China High Magnetic Field Laboratory HFIPSChinese Academy of SciencesHefei 230031China collaborative innovation center of advanced microstructures Nanjing UniversityNanjing 210093China

Intercalation is an effective method to modify physical properties and induce novel electronic states of transition metal dichalcogenide(TMD)***,it is difficult to reveal the microscopic electronic state evolution in the intercalated *** we successfully synthesize the copper-intercalated 1T-TaS_(2) and characterize the structural and electronic modification combining resistivity measurements,atomic-resolution scanning transmission electron microscopy(ADF-STEM),and scanning tunneling microscopy(STM).The intercalated Cu atom is determined to be directly below the Ta atom and suppresses the commensurate charge density wave(CCDW)*** specific electronic modulations are discovered in the near-commensurate(NC)CDW phase:the electron doping state near the defective star of Davids(SDs)in metallic domains and the spatial evolution of the Mott gap in insulating *** modulations reveal that intercalated Cu atoms act as a medium to enhance the interaction between intralayer SDs,in addition to the general charge transfer *** also solidifies the Mott foundation of the insulating gap in pristine *** intriguing electronic evolution in Cu-intercalated 1T-TaS_(2) will motivate further exploration of novel electronic states in the intercalated TMD materials.

关键词： intercalation scanning tunneling microscopy Mott insulator charge transfer electron doping

富含S空位的二维SnS;加速析氢反应（英文）

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science China Materials 2022年

作者：邵功磊向海燕黄梦婕宗怡罗俊冯页新薛雄雄许杰刘松周震 engineering Research center of advanced Functional Material Manufacturing of Ministry of Education School of Chemical Engineering Zhengzhou University Institute of Chemical Biology and Nanomedicine (ICBN) State Key Laboratory of Chemo/Biosensing and Chemometrics College of Chemistry and Chemical Engineering Hunan University school of Physics and Optoelectronics Xiangtan University Institute of Functional Nano and Soft Materials (FUNSOM) Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices Soochow University school of Materials science and engineering Tianjin University of Technology Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices School of Physics and Electronics Hunan University

精确调控二维平面内的原子缺陷可有效调节二维材料的各种基本性质.本研究通过改变退火温度（250–350°C）,实现了二维二硫化锡（SnS;）基面上硫（S）原子的精确敲除,得到了具有不同S空位浓度的SnS;（Vs-SnS;）.当SnS;在350°C下退火5 h...

精确调控二维平面内的原子缺陷可有效调节二维材料的各种基本性质.本研究通过改变退火温度（250–350°C）,实现了二维二硫化锡（SnS;）基面上硫（S）原子的精确敲除,得到了具有不同S空位浓度的SnS;（Vs-SnS;）.当SnS;在350°C下退火5 h时,大量出现单S原子和双S原子空位形态, S空位浓度可达30.5%.在自制微芯片中测试Vs-SnS;的电催化析氢性能. S空位浓度达到30.5%的Vs-SnS;表现出优异的催化性能,Tafel斜率达到74 mV dec;,起始电位低至141 mV.通过理论计算对反应机制进行研究,结果表明, S原子的缺失促进了表面电荷调制,提高了SnS;的导电性.此外, S空位导致Sn原子的不饱和配位,从而引起晶格畸变和电荷密度重新分布,更加有利于析氢反应.简而言之,通过控制退火温度可精确敲除特定原子、制造缺陷,可成为探索各种2D材料结构相关特性的一种有效策略.

关键词：

electronic structure of correlated topological insulator candidate YbB6 studied by photoemission and quantum oscillation

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Chinese Physics B 2020年第1期29卷 70-75页

作者：张腾李岗孙淑翠秦娜康璐姚淑华翁红明 S K Mo 李璐柳仲楷杨乐仙陈宇林 State Key Laboratory of Low Dimensional Quantum Physics Department of PhysicsTsinghua UniversityBeijing 100084China Department of Physics University of MichiganAnn ArborMI 48109USA Beijing National Laboratory for Condensed Matter Physics and Institute of Physics Chinese Academy of SciencesBeijing 100190China National Laboratory of Solid State microstructures&Department of Materials science and engineering Nanjing UniversityNanjing 210093China collaborative innovation center of Quantum Matter BeijingChina Songshan Lake Materials Laboratory Dongguan 523808China CAS center for Excellence in Topological Quantum Computation Beijing 100190China Physical science Laboratory Huairou National Comprehensive Science CenterBeijing 101400China advanced Light Source Lawrence Berkeley National LaboratoryBerkeleyCA 94720USA school of Physical science and Technology ShanghaiTech University and CAS-Shanghai Science Research CenterShanghai 201210China ShanghaiTech Laboratory for Topological Physics Shanghai 200031China Frontier science center for Quantum Information Beijing 100084China Department of Physics Clarendon LaboratoryUniversity of Oxford Parks RoadOxford OX13PUUK

Angle-resolved photoemission spectroscopy(ARPES)and torque magnetometry(TM)measurements have been carried out to study the electronic structures of a correlated topological insulator(TI)candidate Yb *** observed clear surface states on the[001]surface centered at theГ^- and М^- points of the surface Brillouin ***,the fermiology revealed by the quantum oscillation of TM measurements agrees excellently with ARPES ***,the band structures we observed suggest that the band inversion in Yb B6 happens between the Yb5 dand B2bands,instead of the Yb5dand Yb4fbands as suggested by previous theoretical investigation,which will help settle the heavy debate regarding the topological nature of samarium/ytterbium hexaborides.

关键词： topological insulator electronic structure surface states

Germanium isotope effect induced guest rattling and cage distortion in clathrates

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Journal of Materiomics 2018年第4期4卷 338-344页

作者： Ran Ang Zhengshang Wang Shang-Fei Wu Pierre Richard Zhenzhong Yang Lin Gu Gang Mu Jingtao Xu Ning Liu Jun Tang Key Laboratory of Radiation Physics and Technology Ministry of EducationInstitute of Nuclear Science and TechnologySichuan UniversityChengdu610064China Institute of New Energy and Low-Carbon Technology Sichuan UniversityChengdu610065China Institute of Physics Chinese Academy of SciencesBeijing100190China collaborative innovation center of Quantum Matter Beijing100190China school of Physical sciences University of Chinese Academy of SciencesBeijing100190China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai200050China Ningbo Institute of Materials Technology and engineering Chinese Academy of SciencesNingbo315201China

Intermetallic clathrates are materials characterized by a large cage structure where guest atoms can move anharmonically,providing these materials exotic thermoelectric ***,the dynamical and atomic nature of the rattling phonons,and their interactions with the electronic structure,are not fully ***,we report that a germanium isotope effect can trigger an inherent guest rattling and cage distortion in clathrate Ba8Ga16Ge30(BGG).Raman-scattering spectroscopy and advanced electron microscopy demonstrate that the atomic germanium isotope effect induces an offcentre rattling at the 6d sites as well as a tetrakaidecahedron deformation which is anisotropic for ntype BGG but isotropic for p-type *** present findings indicate that the large n-type germanium isotope effect arises from the strong electron-phonon coupling,which opens up a novel avenue for manipulating dynamical motions of phonons via atomic isotope engineering.

关键词： Thermoelectric Clathrate Isotope effect Electron-phonon coupling