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Alternative Strategy for Development of Dielectric Calcium Copper Titanate‑Based Electrolytes for Low‑Temperature Solid Oxide Fuel Cells

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Nano-Micro Letters 2025年第1期17卷 310-332页

作者： Sajid Rauf Muhammad Bilal Hanif Zuhra Tayyab Matej Veis MAKYousaf Shah Naveed Mushtaq Dmitry Medvedev Yibin Tian Chen Xia Martin Motola Bin Zhu College of Mechatronics and Control Engineering Shenzhen UniversityShenzhen 518060People’s Republic of China Department of Inorganic Chemistry Faculty of Natural SciencesComenius University BratislavaIlkovicova684215 BratislavaSlovakia Energy Storage Joint Research Center School of Energy and EnvironmentSoutheast UniversityNanjing 210096People’s Republic of China Hydrogen Energy Laboratory Ural Federal University620002 EkaterinburgRussia Laboratory of Electrochemical Devices Based on Solid Oxide Proton Electrolytes Institute of High Temperature Electrochemistry620066 EkaterinburgRussia school of microelectronics Hubei UniversityWuhan 430062People’s Republic of China

The development of low-temperature solid oxide fuel cells(LT-SOFCs)is of significant importance for realizing the widespread application of *** has stimulated a substantial materials research effort in developing high oxide-ion conductivity in the electrolyte layer of *** this context,for the first time,a dielectric material,CaCu_(3)Ti_(4)O_(12)(CCTO)is designed for LT-SOFCs electrolyte application in this *** individual CCTO and its heterostructure materials with a p-type Ni_(0.8)Co_(0.15)Al_(0.05)LiO_(2−δ)(NCAL)semiconductor are evaluated as alternative electrolytes in LT-SOFC at 450–550℃.The single cell with the individual CCTO electrolyte exhibits a power output of approximately 263 mW cm^(-2) and an open-circuit voltage(OCV)of 0.95 V at 550℃,while the cell with the CCTO–NCAL heterostructure electrolyte capably delivers an improved power output of approximately 605 mW cm^(-2) along with a higher OCV over 1.0 V,which indicates the introduction of high hole-conducting NCAL into the CCTO could enhance the cell performance rather than inducing any potential short-circuiting *** is found that these promising outcomes are due to the interplay of the dielectric material,its structure,and overall properties that led to improve electrochemical mechanism in CCTO–***,density functional theory calculations provide the detailed information about the electronic and structural properties of the CCTO and NCAL and their heterostructure CCTO–*** study thus provides a new approach for developing new advanced electrolytes for LT-SOFCs.

关键词： LT-SOFCs Dielectric CaCu_(3)Ti_(4)O_(12) Semiconductor Ni_(0.8)Co_(0.15)Al_(0.05)LiO_(2−δ) Ionic conductivity Heterostructure electrolyte

A multivariate process capability index model system

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Journal of Semiconductors 2011年第1期32卷 116-122页

作者：王少熙王党辉 College of software and microelectronics Northwestern Polytechnical University school of Computer Science and Technology Northwestern Polytechnical University

This paper presents a systematic multivariate process capability index （MPCI） method, which may provide references for assuring and improving process quality levels while achieving an overall evaluation of process quality. The system method includes a spatial MPCI model for multivariate normal distribution data, MPCI model based on factor weight for multivariate no-normal distribution application, and MPCI model based on yield foryield application. At last, examples for calculating MPCI are given, and the experimental results show that this systematic method is effective and practical.

关键词： microelectronics process multivariate process capability index yield factor weight

Heavy ion induced electrical property degradation in sub-100 nm bulk silicon MOS devices

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Journal of Semiconductors 2015年第11期36卷 30-33页

作者：陈叶华安霞武唯康张曜刘静静张兴黄如 Peking University Shenzhen Graduate school Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University school of software and microelectronics Peking University

The radiation response of 90 nm bulk silicon MOS devices after heavy ion irradiation is experimentally investigated. Due to the random strike of the incident particle, different degradation behaviors of bulk silicon MOS devices are observed. The drain current and maximum transconductance degrade as a result of the displacement damage in the channel induced by heavy ion strike. The off-state leakage current degradation and threshold voltage shift are also observed after heavy ion irradiation. The results suggest that the radiation induced damage of sub-100 nm MOS devices caused by heavy ion irradiation should be paid attention.

关键词： heavy ion displacement damage bulk silicon

A compact SCR model using advanced BJT models and standard SPICE elements

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Science China(Information Sciences) 2016年第10期59卷 248-250页

作者： Jian CAO Jingya XU Yuan WANG Guangyi LU Xing ZHANG Key Laboratory of Microelectronic Devices and Circuits (Ministry of Education) Institute of MicroelectronicsPeking University school of software & microelectronics Peking University

Dear editor,The Silicon controlled rectifiers(SCR)are widely used to protect integrated circuits(ICs)from electrostatic discharge(ESD)and electrical overstress(EOS)damage[1].An accurate SCR model is highly desirable in on-chip ESD protection *** studies modeled SCRs by aggregating conventional bipolar junction transistor(BJT)models and adding extra physical models that conventional BJT models fail to support[2,3].However the auxiliary models are mostly complicated

关键词： SPICE SCR A compact SCR model using advanced BJT models and standard SPICE elements BJT

Stationary Almost Markov ε-Equilibria for Discounted Stochastic Games with Borel Spaces and Unbounded Payoffs

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Journal of Systems Science & Complexity 2024年第4期37卷 1672-1684页

作者： WU Yiting ZHANG Junyu HUANG Song school of Mathematics Sun Yat-Sen UniversityGuangzhou 510275China school of software and microelectronics Peking UniversityBeijing 100871China

This paper is concerned with nonzero-sum discrete-time stochastic games in Borel state and action spaces under the expected discounted payoff *** payoff function can be *** transition probability is a convex combination of finite probability measures that are dominated by a probability measure on the state space and depend on the state *** suitable conditions,the authors establish the existence of stationary almost Markov ε-equilibria and give an approximation method via some stochastic games with bounded ***,a production game is introduced to illustrate the applications of the main result,which generalizes the bounded payoff case.

关键词： Almost Markovε-equilibrium Borel state space expected discounted payoff criterion nonzero-sum stochastic games unbounded payoffs

Exploiting Consumer Reviews for Product Feature Ranking

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Journal of Computer Science & Technology 2012年第3期27卷 635-649页

作者：李素科关志唐礼勇陈钟 school of software and microelectronics Peking University school of Electronics Engineering and Computer Science Peking University

Web 2.0 technology leads Web users to publish a large number of consumer reviews about products and services on various websites. Major product features extracted from consumer reviews may let product providers find what features are mostly cared by consumers, and also may help potential consumers to make purchasing decisions. In this work, we propose a linear regression with rules-based approach to ranking product features according to their importance. Empirical experiments show our approach is effective and promising. We also demonstrate two applications using our proposed approach. The first application decomposes overall ratings of products into product feature ratings. And the second application seeks to generate consumer surveys automatically.

关键词： product feature ranking product review opinion mining

A 2nd-Order Noise Shaping SAR ADC Realizing NTF Zero-Pole Optimization Based on IIR-FIR Filter

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Chinese Journal of Electronics 2022年第1期31卷 33-39页

作者： ZHANG Yanbo LIU Shubin LIANG Yuhua ZHU Zhangming school of microelectronics Xidian University

This paper reports a successive approximation register(SAR) analog-to-digital converters(ADCs) with the 2 nd-order and optimized noise shaping(NS) scheme. Based on the feed-forward structure, both noise transfer function(NTF) zero and pole optimization have been achieved simultaneously utilizing a cascaded IIR-FIR(infinite impulse response and finite impulse response) filter. The analysis shows that the proposed structure provides a better NS efficiency than prior arts. The efficiency of the proposed NS scheme and the ADC performance are verified by simulation achieving a 14.2 effective number of bits with an 8-bit SAR ADC architecture at an over sampling rate of 8 sampled at 100 MS/*** advantage of the NTF zero-pole optimization, a low resolution SAR ADC is allowed under the same quantization noise budget in this structure.

关键词： feedforward structure 2nd-order noise shaping SAR ADC architecture noise transfer function zero quantization noise budget transfer functions NTF zero-pole optimization analog-to-digital converters finite impulse response infinite impulse response cascaded IIR-FIR filter FIR filters analogue-digital conversion IIR filters optimisation NS scheme

Three-dimensional global interconnect based on a design window

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Chinese Physics B 2011年第10期20卷 463-468页

作者：钱利波朱樟明杨银堂 microelectronics school Xidian University

Based on a stochastic wire length distributed model, the interconnect distribution of a three-dimensional integrated circuit （3D IC） is predicted exactly. Using the results of this model, a global interconnect design window for a giga-scale system-on-chip （SOC） is established by evaluating the constraints of 1） wiring resource, 2） wiring bandwidth, and 3） wiring noise. In comparison to a two-dimensional integrated circuit （2D IC） in a 130-nm and 45-nm technology node, the design window expands for a 3D IC to improve the design reliability and system performance, further supporting 3D IC application in future integrated circuit design.

关键词： three-dimensional integrated circuit design window wiring resource bandwidth

A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate MOSFETs

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Chinese Physics B 2014年第3期23卷 619-624页

作者：李聪庄奕琪张丽靳刚 school of microelectronics Xidian University

A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding- gate （JLDMCSG） metal-oxide-semiconductor field-effect transistors （MOSFETs） is proposed. It is derived by solving the two-dimensional Poisson＇s equation in two continuous cylindrical regions with any simplifying assumption. Using this analytical model, the subthreshold characteristics of JLDMCSG MOSFETs are investigated in terms of channel electro- static potential, horizontal electric field, and subthreshold current. Compared to junctionless single-material cylindrical surrounding-gate MOSFETs, JLDMCSG MOSFETs can effectively suppress short-channel effects and simultaneously im- prove carrier transport efficiency. It is found that the subthreshold current of JLDMCSG MOSFETs can be significantly reduced by adopting both a thin oxide and thin silicon channel. The accuracy of the analytical model is verified by its good agreement with the three-dimensional numerical simulator ISE TCAD.

关键词： surrounding-gate MOSFET dual-material gate junctionless transistor analytical model