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Evaluation of properties of co.crete using fluosilicate salts and metal (Ni,W) co.pounds

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中国有色金属学会会刊：英文版 2009年第B09期19卷 134-142页

作者： Gyu-Yong KIM Eui-Bae LEE Bae-Su KHIL Seung-Hun LEE Division of Architecture Engineering Chungnam National University Research Institute of Technology Tripod Co. Research Institute of Technology Samsung Construction and Engineering

To improve watertightness and antibiosis of sewage structure co.crete, the antimicrobial watertight admixture was made with fluosilicate salts and antimicrobial co.pounds. And fresh properties, watertightness, harmlessness and antibiosis of co.crete were investigated experimentally. As a result, the fresh properties of co.crete were similar to those of an ordinary co.crete, without setting time delay. co.pressive strength and carbonation resistance of co.crete were better than those of an ordinary co.crete. Finally it was co.firmed that the antimicrobial watertight admixture of co.crete had an antibiosis inhibiting SOB growth.

关键词：抗菌化合物混凝土性能混凝土外加剂普通混凝土金属评价盐硅

Metadynamics sampling in atomic environment space for co.lecting training data for machine learning potentials

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npj co.putational Materials 2021年第1期7卷 1171-1179页

作者： Dongsun Yoo Jisu Jung Wonseok Jeong Seungwu Han Department of Materials Science and Engineering and Research Institute of Advanced Materials Seoul National UniversitySeoulKorea samsung Display co. Ltd.1Samsung-roGiheung-guYongin-siGyeonggi-doKorea

The universal mathematical form of machine-learning potentials(MLPs)shifts the co.e of development of interatomic potentials to co.lecting proper training ***,the training set should enco.pass diverse local atomic environments but co.ventional approaches are prone to sampling similar co.figurations repeatedly,mainly due to the Boltzmann *** such,practitioners handpick a large pool of distinct co.figurations manually,stretching the development period *** overco.e this hurdle,methods are being proposed that automatically generate training ***,we suggest a sampling method optimized for gathering diverse yet relevant co.figurations *** is achieved by applying the metadynamics with the descriptor for the local atomic environment as a co.lective *** a result,the simulation is automatically steered toward unvisited local environment space such that each atom experiences diverse chemical environments without *** apply the proposed metadynamics sampling to H:Pt(111),GeTe,and Si *** these examples,a small number of metadynamics trajectories can provide reference structures necessary for training high-fidelity *** proposing a semiautomatic sampling method tuned for MLPs,the present work paves the way to wider applications of MLPs to many challenging applications.

关键词： dynamics co.lective stretching

Destruction of hexafluoroethane in a dielectric-packed bed plasma reactor

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Journal of Zhejiang University-Science A(Applied Physics & Engineering) 2010年第7期11卷 538-544页

作者： D. H. KIM Y. S. MOK S. B. LEE S. M. SHIN Department of Chemical & Biological Engineering Research Institute of Advanced Technology Jeju National University Environmental Business Unit Samsung Engineering Co. Ltd. Hwasung Gyeonggido Korea

The destruction of hexafluoroethane (C2F6), also known as R-116, was investigated in a nonthermal plasma reactor packed with dielectric pellets. The effects of the feed gas co.position and the input power on the destruction of C2F6 were examined. The feed gas co.position was varied by changing the oxygen co.tent, the argon co.tent and the initial C2F6 co.centration. An increased input power led to increased C2F6 destruction as a result of promoting the electron-molecule co.lisions to dissociate C2F6 molecules. The addition of argon to the feed gas greatly improved the C2F6 destruction by reducing the energy losses due to vibrational excitation and dissociation of N2 molecules, while the increases in the oxygen co.tent and the initial C2F6 co.centration decreased the destruction efficiency. The byproducts including co., co. co.2, CF4, SiF4, NO2, and N2O were identified, and the destruction mechanisms were elucidated, referring to these co.pounds. The most abundant byproduct was found to be carbonyl fluoride (co.2), indicating that it serves as an important medium to co.vert C2F6 into co.. The energy requirement for the C2F6 destruction was in the range of 8.2–45.3 MJ/g, depending on the initial co.centration.

关键词： Hexafluoroethane (C2F6) Nonthermal plasma Gas co.position Destruction mechanisms

Microsphere-assisted hyperspectral imaging:super-resolution,non-destructive metrology for semico.ductor devices

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Light(Science & Applications) 2024年第6期13卷 1098-1111页

作者： Jangryul Park Youngsun Choi Soonyang Kwon Youngjun Lee Jiwoong Kim Jae-joon Kim Jihye Lee Jeongho Ahn Hidong Kwak Yusin Yang Taeyong Jo Myungjun Lee Kwangrak Kim Metrology and Inspection Equipment R&D Team Mechatronics ResearchSamsung Electronics Co.Ltd.1-1 Samsungjeonja-rohwaseong-siGyeonggi-do18848Republic of Korea Process Development Department DRAM Process Development TeamSemiconductor R&D CenterSamsung Electronics Co.Ltd.1-1 Samsungjeonja-rohwaseong-siGyeonggi-do18848Republic of Korea Process Development Department Semiconductor R&D CenterSamsung Electronics Co.Ltd.1-1 Samsungjeonja-rohwaseong-siGyeonggi-do18848Republic of Korea

As semico.ductor devices shrink and their manufacturing processes advance,accurately measuring in-cell critical dimensions(CD)beco.es increasingly *** test element group(TEG)measurements are beco.ing inadequate for representing the fine,repetitive patterns in cell *** non-destructive metrology technologies like optical critical dimension(OCD)are limited due to their large spot diameter of approximately 25μm,which impedes their efficacy for detailed in-cell structural ***,there is a pressing need for small-spot and non-destructive metrology *** address this limitation,we demonstrate a microsphere-assisted hyperspectral imaging(MAHSI)system,specifically designed for small spot optical metrology with *** microsphere-assisted super-resolution imaging,this system achieves an optical resolution of 66 nm within a field of view of 5.6μm×5.6μ*** approach effectively breaks the diffraction limit,significantly enhancing the magnification of the *** MAHSI system inco.porating hyperspectral imaging with a wavelength range of 400–790 nm,enables the capture of the reflection spectrum at each camera *** achieved pixel resolution,which is equivalent to the measuring spot size,is 14.4 nm/pixel and the magnification is *** MAHSI system enables measurement of local uniformity in critical areas like co.ners and edges of DRAM cell blocks,areas previously challenging to inspect with co.ventional OCD *** our knowledge,this approach represents the first global implementation of microsphere-assisted hyperspectral imaging to address the metrology challenges in co.plex 3D structures of semico.ductor devices.

关键词： metrology resolution enable

Silico. nanowire CMOS NOR logic gates featuring onevolt operation on bendable substrates

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Nano Research 2018年第5期11卷 2625-2631页

作者： Jeongje Moon Yoonjoong Kim Doohyeok Lim Sangsig Kim Department of Electrical Engineering Korea University 145 Anam-ro Seongbuk-gu Seoul 02841 Republic of Korea LED PKG Development Group Samsung Electronics Co. Ltd. 1 Samsung-ro Yongin-si Gyeonggi-do 17113 Republic of Korea

In this study, we propose co.plementary metal-oxide-semico.ductor （CMOS） NOR logic gates co.sisting of silico. nanowire （NW） arrays on bendable substrates. A circuit co.sisting of two p-channel NW field-effect transistors （NWFETs） in series and two n-channel NWFETs in parallel is co.structed to operate a two- input CMOS NOR logic gate. The NOR logic gates operate at a low supply voltage of 1 V with a rail-to-rail logic swing and a high voltage gain of approximately -3.0. The exact NOR logic functionality is achieved owing to the superior electrical characteristics of the well-aligned p- and n-NWFETs, which are obtained using co.ventional Si-based CMOS technology. Moreover, the NOR logic gates exhibit stable characteristics and have good mechanical properties. The proposed bendable NW CMOS NOR logic gates are promising building blocks for future bendable integrated electronics.

关键词： field-effect transistor silico. nanowire NOR logic gate bendable substrate

Silico. nanowire ratioed inverters on bendable substrates

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Nano Research 2018年第5期11卷 2586-2591页

作者： Jeongje Moon Yoonjoong Kim Doohyeok Lim Kyeungmin Im Sangsig Kim Department of Electrical Engineering Korea University 145 Anam-ro Seongbuk-gu Seoul 02841 Republic of Korea LED PKG Development Group Samsung Electronics Co. Ltd. 1 Samsung-ro Yongin-si Gyeonggi-do 17113 Republic of Korea

In this study, we demonstrate the performance of silico. nanowire （SiNW） n-metal oxide semico.ductor （MOS） and p-MOS ratioed inverters that are fabricated on bendable substrates. The electrical characteristics of the fabricated devices can be co.trolled by adjusting the load voltage. The logic swings of the n- and p-MOS ratioed inverters at a low supply voltage of 1V are 80% and 96%, respectively. The output voltage level of the p-MOS ratioed inverter is close to rail-to-rail operation. The device also exhibits stable characteristics with good fatigue properties. Our bendable SiNW ratioed inverters show promise as a candidate building block for future bendable electronics.

关键词： silico. nanowire ratioed inverter n-metal oxide semico.-ductor (MOS) inverter p-MOS inverter bendable substrate

Reliability Analysis of Sn-Bi Plating Chips

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上海交通大学学报 2007年第S2期41卷 154-156页

作者：帅迪金星郭士达柳光洙 samsung Electronics(Suzhou) Semico.ductor co.Ltd.

The character of Sn-Bi plating chips,such as the effect of whisker preventing, solder ability,temperature cycle(T/C) test and thermal humidity bias(THB) test result was *** research result shows that the Sn-Bi plating... 详细信息

关键词： Sn-Bi whisker solder ability thermal humidity bias(THB)

Additional Polishing Process and the Pin-Up Speed Optimization for the Prevention of Linear Crack of BOC Chip

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上海交通大学学报 2007年第S2期41卷 45-47页

作者：朱家祺李群冯建青孟忠李祯森 samsung Electronics(Suzhou) Semico.ductor co.Ltd.

The thin wafer(such as BOC) is often cracked easily after Die-Attach process and large numbers of products in some semico.ductor co.pany failed as a result of *** it is urgent to get the solution to assure the quality and increase the *** article explained the relation of crack,the chip strength,as well as Die-Attach pin-up speed and how to solve that *** example,additional polishing process can significantly decrease the grind mark damage;pin-up speed optimization can make pin-up force *** linear crack of thin chip can be avoided effectively.

关键词： chip crack chip strength fracture force pin-up speed

Microsphere-assisted,nanospot,non-destructive metrology for semico.ductor devices

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Light(Science & Applications) 2022年第2期11卷 262-275页

作者： Soonyang Kwon Jangryul Park Kwangrak Kim Yunje Cho Myungjun Lee Equipment R&D Team 4 Mechatronics ResearchSamsung Electronics Co.Ltd.1-1 Samsungjeonja-roHwaseong-siGyeonggi-do 18848Republic of Korea

As smaller structures are being increasingly adopted in the semico.ductor industry,the performance of memory and logic devices is being co.tinuously improved with innovative 3D integration schemes as well as shrinking and stacking *** to the increasing co.plexity of the design architectures,optical metrology techniques including spectrosco.ic ellipsometry(SE)and reflectometry have been widely used for efficient process development and yield ramp-up due to the capability of 3D structure ***,there has been an increasing demand for a significant reduction in the physical spot diameter used in the SE technique;the spot diameter should be at least 10 times smaller than the cell dimension(~30×40μm2)of typical dynamic random-access memory to be able to measure in-cell critical dimension(CD)*** this end,this study demonstrates a novel spectrum measurement system that utilizes the microsphere-assisted super-resolution effect,achieving extremely small spot spectral metrology by reducing the spot diameter to~210 nm,while maintaining a sufficiently high signal-to-noise *** addition,a geometric model is introduced for the microsphere-based spectral metrology system that can calculate the virtual image plane magnification and depth of focus,providing the optimal distance between the objective lens,microsphere,and sample to achieve the best possible imaging *** proof of co.cept was fully verified through both simulations and experiments for various ***,owing to its ultra-small spot metrology capability,this technique has great potential for solving the current metrology challenge of monitoring in-cell CD variations in advanced logic and memory devices.

关键词： metrology dimension utilize