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20nm高介电常数金属栅极缺陷减少技术

电子工业专用设备 2017年第1期46卷 8-13页

作者： Vincent Charbois Julie Lebreton Mylène Savoye Eric Labonne Antoine Labourier Benjamin Dumont Chet Lenox Mike von Den Hof stmicroelectronics crolles 2 sas crolles 法国 KLA-Tencor公司欧洲

介绍了20 nm平面技术生产线前端缺陷减少的方法、结果及改善。介绍的缺陷检测优化与缺陷减少方法是针对高性能逻辑器件所用的300 mm晶圆上的高介电常数金属栅极(HKMG)层叠模块而实施的。

关键词：缺陷检测与减少(DI) 成品率改善/学习(YE)

High-performance waveguide-integrated germanium PIN photodiodes for optical communication applications[Invited]

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Photonics Research 2013年第3期1卷 140-147页

作者： Léopold Virot Laurent Vivien Jean-Marc Fédéli Yann Bogumilowicz Jean-Michel Hartmann Frédéric Bœuf Paul Crozat Delphine Marris-Morini Eric Cassan Institut d’Electronique Fondamentale(IEF) Univ.Paris-SudCNRSBât 220F-91405 OrsayFrance CEA LETIMinatec Campus17 rue des MartyrsF-38054 GrenobleFrance stmicroelectronics Silicon Technology DevelopmentCrollesFrance

This paper reports on high-performance waveguide-integrated germanium photodiodes for optical communications applications.200 mm wafers and production tools were used to fabricate the *** over 97%were obtained for three different compact photodiodes(10×10μm and intrinsic region width of 0.5,0.7,and 1μm)within the same batch of three *** photodiodes exhibit low dark currents under reverse bias with median values of 74,62,and 61 nA for intrinsic widths of 0.5,0.7,and 1μm,respectively,over a full *** up to 0.78 A∕W at 1550 nm and zero bias were *** bias operation is possible for 25 and 40 Gbps with receiver sensitivity estimated to−13.9 and−12.3 dBm,respectively.

关键词： waveguide optical communication

Three-Points Modulator Based on DPLL for Wideband Polar Modulation

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Communications and Network 2013年第3期5卷 140-143页

作者： Julien Kieffer S&#233 bastien Rieubon Marc Houdebine S&#233 bastien Dedieu Emil Novakov IMEP-LAHC University of Grenoble-Alpes Grenoble France ST-Ericsson Grenoble France stmicroelectronics Crolles France

We present a nonlinear event-driven model of a Digital PLL used in the context of a polar modulation. This modeling has shown that the estimation method of the TDC gain has a big impact on the EVM for wideband modulation and a solution has been proposed which consists to add the modulation on the gain after calibration of the gain offset. This transforms the classical two-points modulator into a three-points modulator. This implementation has been validated for WCDMA standard.

关键词： DPLL Polar Modulation WCDMA TDC

25 Gbps low-voltage hetero-structured silicongermanium waveguide pin photodetectors for monolithic on-chip nanophotonic architectures

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Photonics Research 2019年第4期7卷 437-444页

作者： DANIEL BENEDIKOVIC LéOPOLD VIROT GUY AUBIN FARAH AMAR BERTRAND SZELAG BAYRAM KARAKUS JEAN-MICHEL HARTMANN CARLOS ALONSO-RAMOS XAVIER LE ROUX PAUL CROZAT ERIC CASSAN DELPHINE MARRIS-MORINI CHARLES BAUDOT FRéDéRIC BOEUF JEAN-MARC FéDéLI CHRISTOPHE KOPP LAURENT VIVIEN Centre de Nanosciences et de Nanotechnologies CNRS University of Paris-Sud Université Paris-Saclay University Grenoble Alpes and CEA LETI Minatec Campus Technology R&D STMicroelectronics SAS

Near-infrared germanium(Ge) photodetectors monolithically integrated on top of silicon-on-insulator substrates are universally regarded as key enablers towards chip-scale nanophotonics, with applications ranging from sensing and health monitoring to object recognition and optical communications. In this work, we report on the highdata-rate performance pin waveguide photodetectors made of a lateral hetero-structured silicon-Ge-silicon(Si-Ge-Si) junction operating under low reverse bias at 1.55 μm. The pin photodetector integration scheme considerably eases device manufacturing and is fully compatible with complementary metal-oxide-semiconductor technology. In particular, the hetero-structured Si-Ge-Si photodetectors show efficiency-bandwidth products of^9 GHz at-1 V and ~30 GHz at-3 V, with a leakage dark current as low as ~150 nA, allowing superior signal detection of high-speed data traffic. A bit-error rate of 10-9 is achieved for conventional 10 Gbps, 20 Gbps, and25 Gbps data rates, yielding optical power sensitivities of-13.85 dBm,-12.70 dBm, and-11.25 dBm, respectively. This demonstration opens up new horizons towards cost-effective Ge pin waveguide photodetectors that combine fast device operation at low voltages with standard semiconductor fabrication processes, as desired for reliable on-chip architectures in next-generation nanophotonics integrated circuits.

关键词： germanium(Ge) photodetectors chip-scale nanophotonics waveguide photodetectors

Recent advances in germanium emission[Invited]

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Photonics Research 2013年第3期1卷 102-109页

作者： P.Boucaud M.El Kurdi A.Ghrib M.Prost M.de Kersauson S.Sauvage F.Aniel X.Checoury G.Beaudoin L.Largeau I.Sagnes G.Ndong M.Chaigneau R.Ossikovski Institut d’Electronique Fondamentale CNRS-Univ.Paris Sud 11Bâtiment 220F-91405 OrsayFrance stmicroelectronics 850 rue Jean Monnet38920 CrollesFrance Laboratoire de Photonique et de Nanostructures CNRS-UPR 20Route de Nozay 91460 MarcoussisFrance Laboratoire de Physique des Interfaces et des Couches Minces CNRS-Ecole polytechniqueF-91128 PalaiseauFrance

The optical properties of germanium can be tailored by combining strain engineering and n-type *** this paper,we review the recent progress that has been reported in the study of germanium light emitters for silicon *** discuss the different approaches that were implemented for strain engineering and the issues associated with n-type *** show that compact germanium emitters can be obtained by processing germanium into tensile-strained microdisks.

关键词： emitter doping strained

Integration of Spin-RAM technology in FPGA circuits

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Integration of Spin-RAM technology in FPGA circuits

GeSnOI mid-infrared laser technology

2006 8th International Conference on Solid-State and Integrated Circuit Technology

作者： W.Zhao E.Belhaire Q.Mistral E.Nicolle T.Devolder C.Chappert Institut d'Electronique Fondamentale University of Paris 11/CNRSFrance stmicroelectronics 850Rue Jean MonnetF38926 CrollesFrance

ISBN: (纸本)1424401607

＜正＞In this paper,we propose a new non-volatile FPGA circuit based on Spin-RAM technology（Spin Transfer Torque Magnetisation Switching RAM）,new generation of MRAM（Magnetic RAM）.This Spin-RAM based FPGA circuit could process securely the information in low power dissipation and high speed;meanwhile all the data processed are stored permanently in the distributed Spin-RAM *** this non-volatile FPGA design, MTJs（Magnetic Tunnel Junction） are used as storage *** to conventional MRAM circuits we don’t use a complex sense amplifier,but a simple SRAM based sense amplifier couples two MTJs per *** non-volatility of Spin-RAM allows the dynamical configuration of FPGA circuits and the start-up time of circuit can be decreased up to some hundred pico *** conventional MRAM,the MTJs of Spin-RAM will be on the semiconductor surface;therefore the circuit die area will not be enlarged comparing with the conventional FPGA.

关键词： Field programmable gate arrays Sense amplifiers MRAM DNA Integration integration Electric circuits low power consumption High speed

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Light(Science & Applications) 2021年第12期10卷 2408-2420页

作者： Binbin Wang Emilie Sakat Etienne Herth Maksym Gromovyi Andjelika Bjelajac Julien Chaste Gilles Patriarche Philippe Boucaud Frédéric Boeuf Nicolas Pauc Vincent Calvo Jérémie Chrétien Marvin Frauenrath Alexei Chelnokov Vincent Reboud Jean-Michel Hartmann Moustafa El Kurdi UniversitéParis-Saclay CNRSC2N10 boulevard Thomas Gobert91120 PalaiseauFrance UniversitéCôte d’Azur CNRSCRHEARue Bernard Grégory06905 Sophia-AntipolisFrance stmicroelectronics Rue Jean Monnet38054 CrollesFrance UniversitéGrenoble Alpes CEAIRIG-DePhy17 rue des Martyrs38000 GrenobleFrance UniversitéGrenoble Alpes CEALeti17 rue des Martyrs38000 GrenobleFrance

GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers ***,Sn alloying and tensile strain can transform them into direct bandgap *** growing laser technology however suffers from a number of limitations,such as poor optical confinement,lack of strain,thermal,and defects management,all of which are poorly discussed in the ***,a specific GeSn-on-insulator(GeSnOI)stack using stressor layers as dielectric optical claddings is demonstrated to be suitable for a monolithically integration of planar Group-IV semiconductor lasers on a versatile photonic platform for the near-and mid-infrared spectral ***-shape resonators on mesa structures were fabricated from GeSnOI,after bonding a Ge_(0.9)Sn_(0.1) alloy layer grown on a Ge strain-relaxed-buffer,itself on a Si(001)*** GeSnOI microdisk mesas exhibited significantly improved optical gain as compared to that of conventional suspended microdisk resonators formed from the as-grown *** further show enhanced vertical out-coupling of the disk whispering gallery mode in-plane radiation,with up to 30%vertical out-coupling *** a result,the GeSnOI approach can be a valuable asset in the development of silicon-based mid-infrared photonics that combine integrated sources in a photonic platform with complex lightwave engineering.

关键词： GeSn OI coupling

An Active Inrush Current Limiter Based on SCR Phase Shift Control for EV Charging Systems

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Journal of Energy and Power Engineering 2016年第4期10卷 247-257页

作者： Cedric Reymond Sebastien Jacques Ghafour Benabdelaziz Jean-Charles Lebunetel Application and System Engineering STMicroelectronics Tours SAS Tours 3 7000 France Research Group on Materials Microelectronics Acoustics & Nanotechnology University of Tours Tours 37200 France

This article gives an overview of the main passive solutions and active techniques, based on AC switches to limit inrush currents in medium power AC-DC converters (up to 3.7 kW) for electric vehicle charging systems. In particular, a strategy, based on SCR (silicon controlled rectifier) phase, shift control in a mixed rectifier bridge with diodes and thyristors, is proposed. The challenge is to help designers optimize the triggering delay of SCRs to both limit the peak value of inrush current spikes and optimize the charge duration of the DC-link capacitor. A mathematical model (Mathcad engineering tool) has been defined to point out, the interest of a variable triggering delay to control SCRs to meet the expectations described previously. Experimental measurements using an industrial evaluation board of the AC-DC converter demonstrate the robustness of the method.

关键词：可控硅触发充电系统电动汽车相移控制励磁涌流 AC-DC变换器限制器中等功率