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Performance improvement of solution-processed CdS/CdTe solar cells with a thin compact TiO_2 buffer layer

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Science Bulletin 2016年第1期61卷 86-91页

作者： Aashir Waleed Qianpeng Zhang Mohammad Mahdi Tavakoli Siu-Fung Leung Leilei Gu Jin He Xiaoliang Mo Zhiyong Fan Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology Peking University Shenzhen soc Key laboratory PKUHKUST Shenzhen-Hongkong Instituition Department of Materials Science Fudan University

The device performance of CdS/CdTe solar cells largely depends on not only the back ohmic contact, but also the conformality of Cd S window layer coating. In order to reduce the light absorption loss in Cd S, the Cd S thickness is usually less than 100 nm. However, pinholes in Cd S and non-conformal coverage of Cd S on transparent conducting oxide layer will cause shunting thus leading to device performance degradation and failure. In this paper, low-temperature and low-cost fabrication methods, i.e., chemical bath deposition and electrochemical deposition, were used to deposit Cd S and Cd Te, respectively. It was found that the yield of device was around 20 % due to shunting. In order to alleviate this problem, a compact layer of TiO2 was inserted between the fluorine-doped tin oxide and Cd S as a buffer layer. The thickness effect of TiO2 was studied and showed that devices with thin(20 nm thickness) TiO2 performed better than the counterparts with thick layers. It was discovered that device yield improved to 80 % and stability in air substantially improved with TiO2 layer.

关键词： Thin films Titanium dioxide Solarenergy Cadmium compounds

An analytic model for gate-all-around silicon nanowire tunneling field effect transistors

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Chinese Physics B 2014年第9期23卷 369-374页

作者：刘颖何进陈文新杜彩霞叶韵赵巍吴文邓婉玲王文平 School of Electronics and Computer Science Peking University Peking University Shenzhen soc Key laboratory PKU-HKUST Shenzhen-Hong Kong Institution Shenzhen Huayue Terascale Chip Electronic Limited Co.Ltd.

An analytical model of gate-all-around （GAA） silicon nanowire tunneling field effect transistors （NW-TFETs） is developted based on the surface potential solutions in the channel direction and considering the band to band tunneling （BTBT） efficiency. The three-dimensional Poisson equation is solved to obtain the surface potential distributions in the partition regions along the channel direction for the NW-TFET, and a tunneling current model using Kane＇s expression is developed. The validity of the developed model is shown by the good agreement between the model predictions and the TCAD simulation results.

关键词： gate-all-round nanowire tunneling field effect transistor band to band tunneling analytic model

An improvement to computational efficiency of the drain current model for double-gate MOSFET

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Chinese Physics B 2011年第9期20卷 392-395页

作者：周幸叶张健周致赜张立宁马晨月吴文赵巍张兴 TSRC Institute of MicroelectronicsSchool of Electronic Engineering and Computer SciencePeking University Academy for Advanced Interdisciplinary Studies Peking University Peking University Shenzhen soc Key laboratory PKU-HKUST Shenzhen Institution

As a connection between the process and the circuit design, the device model is greatly desired for emerging devices, such as the double-gate MOSFET. Time efficiency is one of the most important requirements for device modeling. In this paper, an improvement to the computational efficiency of the drain current model for double-gate MOSFETs is extended, and different calculation methods are compared and discussed. The results show that the calculation speed of the improved model is substantially enhanced. A two-dimensional device simulation is performed to verify the improved model. Furthermore, the model is implemented into the HSPICE circuit simulator in Verilog-A for practical application.

关键词： computational efficiency compact model double-gate MOSFET

Diode parameter extraction by a linear cofactor difference operation method

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Journal of Semiconductors 2010年第11期31卷 43-46页

作者：马晨月张辰飞王昊何进林信南 Mansun Chan Shenzhen soc Key laboratory of Peking University PKU-HKUST Shenzhen InstituteHi-Tech Industrial Park South Key laboratory of Integrated Microsystems School of Computer & Information EngineeringPeking UniversityShenzhen Graduate School Department of Electronic and Computer Engineering Hong Kong University of Science and Technology

The linear cofactor difference operator（LCDO） method,a direct parameter extraction method for general diodes,is *** the developed LCDO method,the extreme spectral characteristic of the diode voltage-current curves is revealed,and its extreme positions are related to the diode characteristic parameters *** method is applied to diodes with different sizes and temperatures,and the related characteristic parameters,such as reverse saturation current,series resistance and non-ideality factor,are extracted *** extraction result shows good agreement with the experimental data.

关键词： LCDO diode parameter extraction ideality factor series resistance

A Single-Transistor Active Pixel CMOS Image Sensor Architecture

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Chinese Physics Letters 2012年第3期29卷 56-58页

作者： ZHANG Guo-An ZHANG Dong-Wei HE Jin SU Yan-Mei WANG Cheng CHEN Qin LIANG Hai-Lang YE Yun School of Electronics and Information Nantong UniversityNantong 226019 Peking University Shenzhen soc Key laboratory PKU-HKUST Shenzhen-Hongkong InstitutionIER Bldg.Hi-Tech Industrial Park SouthShenzhen 518057

A single-transistor CMOS active pixel image sensor(1T CMOS APS)architecture is proposed,By switching the photosensing pinned diode,resetting and selecting can be achieved by diode pull-up and capacitive coupling pull-down of the source ***,the reset and selected transistors can be *** addition,the reset and selected signal lines can be shared to reduce the metal signal line,leading to a very high fill *** pixel design and operation principles are discussed in *** functionality of the proposed 1 T CMOS APS architecture has been experimentally verified using a fabricated chip in a standard 0.35μm CMOS AMIS technology.

关键词： technology Active reset

A SPICE model for a phase-change memory cell based on the analytical conductivity model

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Journal of Semiconductors 2012年第11期33卷 52-56页

作者：魏益群林信南贾宇超崔小乐何进张兴 The Key laboratory of Integrated Microsystems Shenzhen Graduate School of Peking University Peking University Shenzhen soc Key laboratory PKU-HKUSTShenzhen-Hong Kong Institute The Kev Laboratorv of Integrated Microsvstems.Shenzhen Graduate School of Peking University Key laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsSchool of Electronics and Computer SciencePeking University

By way of periphery circuit design of the phase-change memory,it is necessary to present an accurate compact model of a phase-change memory cell for the circuit *** with the present model,the model presented in this work includes an analytical conductivity model,which is deduced by means of the carrier transport theory instead of the fitting model based on the *** addition,this model includes an analytical temperature model based on the 1D heat-transfer equation and the phase-transition dynamic model based on the JMA equation to simulate the phase-change *** above models for phase-change memory are integrated by using Verilog-A language,and results show that this model is able to simulate theⅠ-Ⅴcharacteristics and the programming characteristics accurately.

关键词： phase-change memory compact model analytical conductivity

Nitrogen addition promotes soil carbon accumulation globally

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Science China Life Sciences 2025年第1期 284-293页

作者： Xuemei Yang Suhui Ma Erhan Huang Danhua Zhang Guoping Chen Jiangling Zhu Chengjun Ji Biao Zhu Lingli Liu Jingyun Fang Institute of Ecology College of Urban and Environmental Sciencesand Key Laboratory for Earth Surface Processes of the Ministry of EducationPeking University Ministry of Education Key laboratory for Transboundary Ecosecurity of Southwest China School of Ecology and Environmental ScienceYunnan University State Key laboratory of Vegetation and Environmental Change Institute of BotanyChinese Academy of Sciences

Soil is the largest carbon(C) reservoir in terrestrial ecosystems and plays a crucial role in regulating the global C cycle and climate *** nitrogen(N) deposition has been widely considered as a critical factor affecting soil organic carbon(soc) storage, but its effect on soc components with different stability remains unclear. Here, we analyzed extensive empirical data from 304 sites worldwide to investigate how soc and its components respond to N addition. Our analysis showed that N addition led to a significant increase in bulk soc(6.7%), with greater increases in croplands(10.6%) and forests(6.0%) compared to grasslands(2.1%). Regarding soc components, N addition promoted the accumulation of plant-derived C(9.7%–28.5%) over microbial-derived C(0.2%), as well as labile(5.7%) over recalcitrant components(–1.2%), resulting in a shift towards increased accumulation of plant-derived labile C. Consistently, N addition led to a greater increase in particulate organic C(11.9%) than mineral-associated organic C(3.6%), suggesting that N addition promotes C accumulation across all pools, with more increase in unstable than stable pools. The responses of soc and its components were best predicted by the N addition rate and net primary productivity. Overall, our findings suggest that N enrichment could promote the accumulation of plant-derived and non-mineral associated C and a subsequent decrease in the overall stability of soil C pool, which underscores the importance of considering the effects of N enrichment on soc components for a better understanding of C dynamics in soils.

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Forward gated-diode method for parameter extraction of MOSFETs

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Journal of Semiconductors 2011年第2期32卷 23-27页

作者：张辰飞马晨月郭昕婕张秀芳何进王国增杨张刘志伟 Peking University Shenzhen soc Key laboratory PKU HKUST Shenzhen Institute TSRC Institute of MicroelectronicsSchool of Electronic Engineering and Computer SciencePeking University TSRCInstitute of Microelectronics School of Electronic Engineering and Computer SciencePeking University Key laboratory of Integrated Microsystems School of Computer & Information EngineeringPeking University Shenzhen Graduate School

The forward gated-diode method is used to extract the dielectric oxide thickness and body doping concentration of MOSFETs, especially when both of the variables are unknown previously. First, the dielectric oxide thickness and the body doping concentration as a function of forward gated-diode peak recombination-generation （R-G） current are derived from the device physics. Then the peak R-G current characteristics of the MOSFETs with different dielectric oxide thicknesses and body doping concentrations are simulated with ISE-Dessis for parameter extraction. The results from the simulation data demonstrate excellent agreement with those extracted from the forward gated-diode method.

关键词： forward gated-diode method recombination-generation current parameter extraction MOSFETs

An analytical model for predicting battery lifetime

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Journal of Measurement Science and Instrumentation 2013年第1期4卷 19-22页

作者： Guang Yang Sangho Kim Seongsoo Lee soc laboratory Soongsil UniversitySeoul 156-743Korea

We used an analytical high-level battery model to estimate the battery lifetime for a given *** experimental results show that this model to predict battery lifetime under variable loads is more appropriate than that ... 详细信息

关键词： battery modeling battery lifetime prediction constant load variable load