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Homogeneous and inhomogeneous magnetic oxide semiconductors

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Chinese Physics B 2019年第9期28卷 1-8页

作者： Xiao-Li Li Xiao-Hong Xu key laboratory of magnetic molecules&magnetic information materials of ministry of education and School of Chemistry and materials science Shanxi Normal UniversityLinfen 041004China research institute of materials science of shanxi normal university and Collaborative Innovation Center for shanxi Advanced Permanent magnetic materials and Technology Linfen 041004China

magnetic oxide semiconductors are significant spintronics *** this article, we review recent advances for homogeneous and inhomogeneous magnetic oxide *** the homogeneous magnetic oxide semiconductors,we focus on the various doping techniques including choosing different transition metals, codoping, non-magnetic doping,and even un-doping to realize homogeneous substitution and the clear magnetic *** the enhancement of the ferromagnetism is achieved by nanodot arrays engineering, which is accompanied by the tunable optical *** the inhomogeneous magnetic oxide semiconductors, we review some heterostructures and their magnetic and transport properties, especially magnetoresistance, which are dramatically modulated by electric field in the constructed *** the related mechanisms are discussed in ***, we provide an overview and possible potential applications of magnetic oxide semiconductors.

关键词： magnetic oxide semiconductors ferromagnetism magnetoresistance

Localization effect in single crystal of RuAs_(2)

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Chinese Physics B 2024年第4期33卷 195-200页

作者：易哲铠刘琪光双魁徐升岳小宇梁慧李娜周颖吴丹丹孙燕李秋菊程鹏夏天龙孙学峰王义炎 Anhui key laboratory of magnetic Functional materials and Devices Institute of Physical Science and Information TechnologyAnhui UniversityHefei 230601China Department of Physics and key laboratory of Strongly-Coupled Quantum Matter Physics University of Science and Technology of ChinaHefei 230026China Department of Physics and Beijing key laboratory of Opto-electronic Functional materials&Micro-nano Devices Renmin University of ChinaBeijing 100872China School of Optical and Electronic information Suzhou City UniversitySuzhou 215104China School of Physics and Optoelectronic Engineering Anhui UniversityHefei 230601China Collaborative Innovation Center of Advanced Microstructures Nanjing UniversityNanjing 210093China

We report the magnetotransport and thermal properties of RuAs_(2) single ***_(2) exhibits semiconductor behavior and localization *** crossover from normal state to diffusive transport in the weak localization(WL)state and then to variable range hopping(VRH)transport in the strong localization state has been *** transitions can be reflected in the measurement of resistivity and Seebeck *** magnetoresistance(NMR)emerges with the appearance of localization effect and is gradually suppressed in high magnetic *** temperature dependent phase coherence length extracted from the fittings of NMR also indicates the transition from WL to *** measurement of Hall effect reveals an anomaly of temperature dependent carrier concentration caused by localization *** findings show that RuAs_(2) is a suitable platform to study the localized state.

关键词： weak localization variable range hopping RuAs_(2) single crystal

Magnetoresistance and exchange bias in high Mn content melt-spun Mn_(46)Ni_(42)Sn_(11)Sb_1 alloy ribbon

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Chinese Physics B 2016年第5期25卷 316-320页

作者：黄庆学陈峰华张敏刚许小红 Heavy Machinery Engineering research Center of education ministry College of Mechanical EngineeringTaiyuan University of Science and Technology School of Chemistry and materials science Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education Shanxi Normal University

Highly textured Heusler alloy Mn_（46）Ni_（42）Sn_（11）Sb_1 ribbons were prepared by melt spinning. The annealed high Mn content Mn46Ni42Sn11Sb1 ribbon cross-section microstructure, crystal structure, martensitic transformation（MT）, and magnetoresistance（MR） properties were investigated. The MR in the annealed ribbon was assessed by the magnetic field direction perpendicular to the ribbon surface with the magnetic field up to 30 k Oe. The large negative value of 25% for MR was obtained at 244 K. The exchange bias（EB） effects of the as-spun and annealed ribbons were investigated. After annealing, the EB effects have been improved by about 25 Oe at the temperature of 50 K. The magnetizations have increased approximately by 10% more than the as-spun ribbon.

关键词： Heusler alloy melt spun magnetoresistance exchange bias

Room-temperature ferromagnetism enhancement in Fe-doped VSe2nanosheets synthesized by a chemical method

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Rare Metals 2021年第9期40卷 2501-2507页

作者： Li-Yan Hu Li-Fang Yu Huan Yang Xian Xu Fang Wang Xiao-Hong Xu School of Chemistry and materials science Shanxi Normal UniversityLinfen 041004China key laboratory of magnetic molecules and magnetic information materials Ministry of EducationLinfen 041004China research institute of materials science Shanxi Normal UniversityLinfen 041004China Collaborative Innovation Center for shanxi Advanced Permanent magnetic materials and Technology Linfen 041004China

Two-dimensional(2 D)few-layerVSe_(2),V_(1-x)Fe_(x)Se_(2) nanosheets have been synthesized by a hightemperature organic solution-phase method. The thickness of VSe_(2) nanosheets can be tuned from 12 to 5 layers by decreasing the precursor concentrations. The few-layer VSe_(2) nanosheets show the room-temperature ferromagnetism. The coercivity and magnetization reach 0.024 T and 0.036 mA·m^(2)·g^(-1) at room temperature. The chargedensity wave behavior is also confirmed in VSe_(2) by the hysteresis loops and zero-field-cooling curve. V_(1-x)Fe_(x)Se_(2) nanosheets can be obtained by doping Fe(acac)3 in the reaction process. The room-temperature coercivity and magnetization of V_(0.8)Fe_(0.2)Se_(2) nanosheets are 5 times higher than those of the pure VSe_(2) nanosheets without destroying the structures. The enhancement of magnetization is due to the coupling interaction of 3 d orbits between V and Fe atoms. Higher Fe concentration is beneficial to improve the coercivity, which is attributed to the formation of the second phase Fe3 Se4. This simple chemical preparation method can be extended to prepare the other 2 D materials.

关键词： VSe2 Fe doping Two-dimensional nanosheets Room-temperature ferromagnetism Chemical method

Cobalt-iron oxide/black phosphorus nanosheet heterostructure:Electrosynthesis and performance of(photo-)electrocatalytic oxygen evolution

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Nano research 2023年第5期16卷 6057-6066页

作者： Man Zhao Xiaoru Cheng He Xiao Jianru Gao Shoufeng Xue Xiaoxia Wang Haishun Wu Jianfeng Jia Nianjun Yang key laboratory of magnetic molecules&magnetic information materials ministry of education The School of Chemical and Material ScienceShanxi Normal UniversityTaiyuan 030000China institute of materials Engineering University of SiegenSiegen 57076Germany

Highly active,stable,and cut-price(photo-)electrocatalysts are desired to overwhelm high energy barriers for anodic oxygen evolution reaction ***,a heterostructure of cobalt-iron oxide/black phosphorus nanosheets is in-situ synthesized via a facile and novel three-electrode electrolysis *** black phosphorus is exfoliated into its nanosheets at the cathode while the CoFe oxide is derived directly from the metal wire anode during the electrolysis *** heterostructure exhibits excellent electrocatalytic oxygen evolution reaction(OER)performance,and the overpotential at 10 mA·cm^(−2)is 51 mV lower than that of the commercial RuO_(2)*** superior OER performance stems from the favorable adsorption behavior and an enlarged electrochemical active surface area of the *** reveal the origin of excellent OER performance from the point of adsorption strength of OH*,methanol oxidation reaction(MOR)test is applied under the identified OER operating *** introduction of light illumination enhances the OER activity of this *** overpotential drops down to 280 mV,benefiting from pronounced photochemical response of black phosphorus nanosheets and iron oxide inside the *** work develops a new electrochemical method to construct high performance and light-sensitive heterostructures from black phosphorus nanosheets for the OER.

关键词： electrosynthesis oxygen evolution reaction black phosphorus cobalt oxide iron oxide

Thickness-dependent and strain-tunable magnetism in twodimensional van der Waals VSe_(2)

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Nano research 2022年第8期15卷 7597-7603页

作者： Wenjuan Ci Huali Yang Wuhong Xue Ruilong Yang Baohua Lv Peng Wang Run-Wei Li Xiao-Hong Xu key laboratory of magnetic molecules and magnetic information materials of ministry of education School of Chemistry and Materials ScienceShanxi Normal UniversityTaiyuan 030031China CAS key laboratory of magnetic materials and Devices&Zhejiang Province key laboratory of magnetic materials and Application Technology Ningbo Institute of Materials Technology and EngineeringChinese Academy of SciencesNingbo 315201China

Two-dimensional(2D)van der Waals(vdW)magnetic materials with reduced dimensionality often exhibit unexpected properties compared to their bulk *** particular,the mechanical flexibility of 2D structure,enhanced ferromagnetism at reduced layer thickness,as well as robust perpendicular magnetic anisotropy are quite appealing for constructing novel spintronic *** vdW vanadium diselenide(VSe_(2))is an attractive material whose bulk is paramagnetic while monolayer is ferromagnetic with a Curie temperature(Tc)above room *** explore its possible device applications,a detailed investigation on the thickness-dependent magnetism and strain modulation behavior of VSe_(2)is highly *** this article,the VSe_(2)nanoflakes were controllably prepared via chemical vapor deposition(CVD)*** few-layer single VSe_(2)nanoflakes were found to exhibit magnetic domain structures at room *** magnetic force microscopy(MFM)phase images reveal a clear thickness-dependent magnetism and the MFM phase contrast is traceable for the nanoflakes of layer thickness below~6 ***,applying strain is found efficient in modulating the magnetic moment and coercive field of 2D VSe_(2)at room *** results are helpful for understanding the ferromagnetism of high temperature 2D magnets and for constructing novel straintronic devices or flexible spintronic devices.

关键词： room-temperature ferromagnetism thickness-dependent magnetism strain-modulated magnetism two-dimensional(2D)vanadium diselenide(VSe_(2))

Ultrafast magnetization enhancement and spin current injection in magnetic multilayers by exciting the nonmagnetic metal

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science China(Physics,Mechanics & Astronomy) 2023年第12期66卷 158-168页

作者： Wen-Tian Lu Zhe Yuan Xiaohong Xu key laboratory of magnetic molecules and magnetic information materials of ministry of education School of Chemistry and Materials ScienceShanxi Normal UniversityTaiyuan 030032China institute for Nanoelectronic Devices and Quantum Computing Fudan UniversityShanghai 200433China

A systematic investigation of spin injection behavior in Au/FM(FM=Fe and Ni)multilayers is performed using the superdiffusive spin transport *** exciting the nonmagnetic layer,the laser-induced hot electrons may transfer spin angular momentum into the adjacent ferromagnetic(FM)metals resulting in ultrafast demagnetization or *** find that these experimental phenomena sensitively depend on the particular interface reflectivity of hot electrons and may reconcile the different observations in the *** by the ultrafast spin currents carried by the hot electrons,we propose the multilayer structures to generate highly spin-polarized currents for the development of future ultrafast spintronics *** spin polarization of the electric currents carried by the hot electrons can be significantly enhanced by the joint effects of bulk and interfacial spin ***,the intensity of the generated spin current can be optimized by varying the number of repeated stacking units and the thickness of each metallic layer.

关键词： spintronics ultrafast magnetodynamics spin polarization transport magnetic multilayer

Evolution of Superconducting-Transition Temperature with Superfluid Density and Conductivity in Pressurized Cuprate Superconductors

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Chinese Physics Letters 2024年第4期41卷 110-117页

作者：赵金瑜蔡树陈逸雯顾根大闫宏涛郭静韩金宇王鹏玉周亚洲李延春李晓东任治安吴奇周兴江丁阳向涛毛河光孙力玲 institute of Physics Chinese Academy of SciencesBeijing 100190China Center for High Pressure science&Technology Advanced research Beijing 100094China Condensed Matter Physics&materials science Department Brookhaven National LaboratoryNY 11973-5000USA university of Chinese Academy of sciences Beijing 100190China institute of High Energy Physics Chinese Academy of ScienceBeijing 100049China Beijing Academy of Quantum information sciences Beijing 100193China

What factors fundamentally determine the value of superconducting transition temperature Tc in high temperature superconductors has been the subject of intense *** the establishment of an empirical law known as Homes'law,there is a growing consensus in the community that the Tc value of the cuprate superconductors is closely linked to the superfluid density(ρ_(s))of its ground state and the conductivity(σ)of its normal ***,all the data supporting this empirical law(ρ_(s)=AσT_(c))have been obtained from the ambientpressure *** this study,we present the first high-pressure results about the connection of the quantities of ρ_(s) and σ with T_(c),through the studies on the Bi_(1.74)Pb_(0.38)Sr_(1.88)CuO_(6+δ)and Bi_(2)Sr_(2)CaCu_(2)O_(8+δ),in which the value of their high-pressure resistivity(ρ=1/σ)is achieved by adopting our newly established method,while the quantity ofρs is extracted using Homes'*** highlight that the Tc values are strongly linked to the joint response factors of magnetic field and electric field,i.e.,ρ_(s) and σ,respectively,implying that the physics determining T_(c) is governed by the intrinsic electromagnetic fields of the system.

关键词： superconductors Transition Conductivity

Experimental observation of topological Hall effects in compensated ferrimagnet-heavy metal layered structures

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science China(Physics,Mechanics & Astronomy) 2021年第8期64卷 98-106页

作者： Zheng-Yu Xiao Zhi-Yong Quan Wei Zhang Dong Li Hui-Hui Liu Guo-Wei Zhou Jun Zhang Fei Zhang Xia Liu Xiao-Hong Xu Ming-Zhong Wu key laboratory of magnetic molecules and magnetic information materials of ministry of education School of Chemistry and Materials ScienceShanxi Normal UniversityLinfen 041004China research institute of materials science Shanxi Normal UniversityLinfen 041004China Collaborative Innovation Center for shanxi Advanced Permanent magnetic materials and Technology Linfen 041004China Department of Physics Colorado State UniversityFort CollinsColorado 80523USA

The topological Hall effect(THE) as a powerful probe for the experimental observation of topological spin textures, such as magnetic skyrmions, has been observed in a wide variety of distinct material systems. However, limited experimental observations have been reported for antiferromagnetic(AFM) materials. Here, the THE signals in the AFM state were observed in compensated ferrimagnetic thin films interfaced with heavy metals at the magnetization compensation temperature(TM).Ferrimagnetic CoTb thin films grown on Pt thin films were used in the experiments. The Co Tb films exhibited a magnetization compensation point at which the moments of Co and Tb sublattices canceled each other, giving rise to the AFM state. The temperature(T)-dependent Hall measurements showed anomalous Hall effect(AHE) and THE responses at T≠T_(M) but pure THE responses at T=T_(M). Control measurements and analyses suggest that the THE responses are associated with interfacial Dzyaloshinskii-Moriya interaction(DMI) rather than the overlapping of different AHE signals in the structure. This work presents the first-ever observation of interfacial DMI-induced THE in AFM metal trilayered systems and demonstrates a new approach for electrical reading of chiral spin textures in AFM thin film-based heterostructures.

关键词： topological Hall effect antiferromagnetic state chiral spin textures