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Constructing donor–Acceptor‑Linked COFs Electrolytes to regulate Electron density and Accelerate the Li^(+)Migration in Quasi‑solid‑state Battery

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Nano-Micro Letters 2025年第1期17卷 456-471页

作者： Genfu Zhao Hang Ma Conghui Zhang Yongxin Yang Shuyuan Yu Haiye Zhu Yongjiang Sun Hong Guo School of Materials and Energy International Joint Research Center for Advanced Energy Materials of Yunnan ProvinceYunnan UniversityKunming 650091People’s Republic of China Yunnan Yuntianhua Co. LtdR&D CenterKunming 650228People’s Republic of China Southwest United Graduate School Kunming 650091People’s Republic of China

regulation the electronic density of solid-state electrolyte by donor–acceptor(d–A)system can achieve highly-selective Li^(+)transportation and conduction in solid-state Li metal *** study reports a high-performance solid-state electrolyte thorough d–A-linked covalent organic frameworks(COFs)based on intramolecular charge transfer *** other reported COFbased solid-state electrolyte,the developed concept with d–A-linked COFs not only achieves electronic modulation to promote highly-selective Li^(+)migration and inhibit Li dendrite,but also offers a crucial opportunity to understand the role of electronic density in solid-state Li metal *** introduced strong electronegativity F-based ligand in COF electrolyte results in highlyselective Li^(+)(transference number 0.83),high ionic conductivity(6.7×10^(-4)S cm^(−1)),excellent cyclic ability(1000 h)in Li metal symmetric cell and high-capacity retention in Li/LiFePO_(4)cell(90.8%for 300 cycles at 5C)than substituted C-and N-based *** is ascribed to outstanding d–A interaction between donor porphyrin and acceptor F atoms,which effectively expedites electron transferring from porphyrin to F-based ligand and enhances Li^(+)***,we anticipate that this work creates insight into the strategy for accelerating Li^(+)conduction in high-performance solid-state Li metal batteries through d–A system.

关键词： Electronic modulation engineering donor-acceptor-linked covalent organic frameworks Quasi-solid-state Li metal battery

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A surface engineering strategy for the stabilization of zinc metal anodes with montmorillonite layers toward long-life rechargeable aqueous zinc ion batteries

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Journal of Energy Chemistry 2025年第1期100卷 94-105页

作者： Wenbo Wang ruifeng Xu Xu Zhang Peiyu Wang Bao Yang Bingjun Yang Juan Yang Kailimai Su Pengjun Ma Yanan deng Xianfeng Fan Wanjun Chen Key Laboratory for Electronic Materials College of Electrical Engineering Northwest Minzu University resource Chemistry and Energy Materials research center State Key Laboratory of Solid Lubrication Lanzhou Institute of Chemical Physics Chinese Academy of Sciences University of Chinese Academy of Sciences Institute for Materials and Processes School of Engineering University of Edinburgh

rechargeable aqueous zinc-ion batteries （AZIBs） exhibit appreciable potential in the domain of electrochemical energy ***,there are serious challenges for AZIBs,for instance zinc dendrite growth,hydrogen evolution reaction （HEr）,and corrosion side ***,we propose a surface engineering modification strategy for coating the montmorillonite （MMT） layer onto the surface of the Zn anode to tackle these issues,thereby achieving high cycling stability for rechargeable *** results reveal that the MMT layer on the surface of the Zn anode is able to provide ordered zincophilic channels for zinc ions migration,facilitating the reaction kinetics of zinc *** functional theory（dFT） calculations and water contact angle （CA） tests prove that MMT@Zn anode exhibits superior adsorption capacity for Zn2+and better hydrophobicity than the bare Zn anode,thereby achieving excellent cycling ***,the MMT@Zn||MMT@Zn symmetric cell holds the stable cycling over 5600 h at 0.5 mA cm-2and 0.125 m A h cm-2,even exceeding 1800 h long cycling under harsh conditions of 5 m A cm-2and 1.25 m A h *** MMT@Zn||V2O5full cell reaches over 3000 cycles at 2 A g-1with excellent rate ***,this surface engineering modification strategy for enhancing the electrochemical performance of AZIBs represents a promising application.

关键词： Surface engineering strategy Montmorillonite layer Protection mechanism of Zn anode Cycling stability Aqueous zinc ion batteries

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A novel method of Newton iteration-based interval analysis for multidisciplinary systems

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Science China(Physics,Mechanics & Astronomy) 2017年第9期60卷 47-62页

作者： Lei Wang Chuang Xiong ruiXing Wang XiaoJun Wang di Wu Institute of solid Mechanics Beihang University China Academy of Launch Vehicle Technology r&d center

A Newton iteration-based interval uncertainty analysis method(NI-IUAM) is proposed to analyze the propagating effect of interval uncertainty in multidisciplinary systems. NI-IUAM decomposes one multidisciplinary system into single disciplines and utilizes a Newton iteration equation to obtain the upper and lower bounds of coupled state variables at each iterative ***-IUAM only needs to determine the bounds of uncertain parameters and does not require specific distribution formats. In this way, NI-IUAM may greatly reduce the necessity for raw data. In addition, NI-IUAM can accelerate the convergence process as a result of the super-linear convergence of Newton iteration. The applicability of the proposed method is discussed, in particular that solutions obtained in each discipline must be compatible in multidisciplinary systems. The validity and efficiency of NI-IUAM is demonstrated by both numerical and engineering examples.

关键词： multidisciplinary systems uncertainty propagation insufficient sample data interval uncertainty analysis method Newton iteration

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High-Quality and Strain-relaxation GaN Epilayer Grown on SiC Substrates Using AIN Buffer and AlGaN Interlayer

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Chinese Physics Letters 2017年第4期34卷 108-111页

作者： Bo-Ting Liu Shi-Kuan Guo Ping Ma Jun-Xi Wang Jin-Min Li Semiconductor lighting r&d center Institute of SemiconductorsChinese Academy of SciencesBeijing 100083 College of Materials Science and Opto-Electronic Technology University of Chinese Academy of SciencesBeijing 100049 state Key Laboratory of solid state lighting Beijing 100083 Beijing Engineering research center for the Third-Generation Semiconductor Materials and Application Beijing 100083

We study the effect of the AlGaN interlayer on structural quality and strain engineering of the GaN films grown on SiC substrates with an AlN buffer layer, hnproved structural quality and tensile stress releasing are realized in unintentionally doped GaN thin films grown on 6H-SiC substrates by metal organic chemical vapor deposition. Using the optimized AlGaN interlayer, we find that the full width at half maximum of x-ray diffraction peaks for GaN decreases dramatically, indicating an improved crystalline quality. Meanwhile, it is revealed that the biaxial tensile stress in the GaN film is significantly reduced from the raman results. Photoluminescence spectra exhibit a shift of the peak position of the near-band-edge emission, as well as the integrated intensity ratio variation of the near-band-edge emission to the yellow luminescence band. Thus by optimizing the AlGaN interlayer, we could acquire the high-quality and strain-relaxation GaN epilayer with large thickness on SiC substrates.

关键词： AlGaN In High-Quality and Strain-relaxation GaN Epilayer Grown on SiC Substrates Using AIN Buffer and AlGaN Interlayer SiC AIN

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Influence of Al Preflow Time on Surface Morphology and Quality of AlN and GaN on Si(111) Grown by MOCVd

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Chinese Physics Letters 2017年第5期34卷 119-123页

作者：刘波亭马平李喜林王军喜李晋闽 Semiconductor lighting r&d center Institute of SemiconductorsChinese Academy of SciencesBeijing 100083 College of Materials Science and Opto-Electronic Technology University of Chinese Academy of SciencesBeijing 100049 state Key Laboratory of solid state lighting Beijing 100083 Beijing Engineering research center for the Third-Generation Semiconductor Materials and Application Beijing 100083

We investigate the influence of A1 preflow time on surface morphology and quality of AIN and GaN. The AIN and GaN layers are grown on a Si （111） substrate by metal organic chemical vapor deposition. Scanning electron microscopy, atomic force microscopy, x-ray diffraction and optical microscopy are used for analysis. Consequently, we find significant differences in the epitaxial properties of AlN buffer and the GaN layer, which are dependent on the AI preflow time. A1 preflow layers act as nucleation sites in the case of AiN growth. Compact and uniform AIN nucleation sites are observed with optimizing A1 preflow at an early nucleation stage, which will lead to a smooth AIN surface. Trenches and AlN grain clusters appear on the AIN surface while meltoback etching occurs on the GaN surface with excessive A1 preflow. The GaN quality variation keeps a similar trend with the AIN quality, which is influenced by AI preflow. With an optimized duration orAl preflow, crystal quality and surface morphology of AIN and GaN could be improved.

关键词： GaN AlN AIN Grown by MOCVd Influence of Al Preflow Time on Surface Morphology and Quality of AlN and GaN on Si Si

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Localized deep levels in Al_xGa_(1-x)N epitaxial films with various Al compositions

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Chinese Physics B 2014年第11期23卷 422-426页

作者：时俪洋沈波闫建昌王军喜王平 state Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University r&d center for Semiconductor lighting Institute of Semiconductors Chinese Academy of Sciences

By using high-temperature deep-level transient spectroscopy （HT-dLTS） and other electrical measurement techniques, localized deep levels in n-type AlxGal xN epitaxial films with various A1 compositions （x = 0, 0.14, 0.24, 0.33, and 0.43） have been investigated. It is found that there are three distinct deep levels in AlxGal-xN films, whose level position with respect to the conduction band increases as AI composition increases. The dominant defect level with the activation energy deeper than 1.0 eV below the conduction band closely follows the Fermi level stabilization energy, indicating that its origin may be related to the defect complex, including the anti-site defects and divacancies in AlxGa1-xN films.

关键词： localized deep levels current-voltage capacitance-voltage high-temperature deep-level transientspectroscopy techniques

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Influence of initial growth conditions and Mg-surfactant on the quality of GaN film grown by MOVPE

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Journal of Semiconductors 2015年第2期36卷 34-37页

作者：曹峻松吕欣赵璐冰曲爽高伟 state Key Laboratory of solid-state lighting Beijing Solid-State Lighting Science and Technology Promotion Center Institute of Semiconductors Chinese Academy of Sciences Shandong Inspur Huaguang Optoelectronics Co. LTD.

The initial growth conditions of a 100 nm thick GaN layer and Mg-surfactant on the quality of the GaN epilayer grown on a 6H-SiC substrate by metal-organic vapor phase epitaxy have been investigated in this research. Experimental results have shown that a high V/III ratio and the initially low growth rate of the GaN layer are favorable for two-dimension growth and surface morphology of GaN and the formation of a smoother growth surface. Mg-surfactant occurring during GaN growth can reduce the dislocations density of the GaN epilayer but increase the surface rMS, which are attributed to the change of growth mode.

关键词： metalorganic vapor phase epitaxy gallium nitride high resolution X-ray diffraction

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Closed-form solutions for free vibration of rectangular FGM thin plates resting on elastic foundation

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Acta Mechanica Sinica 2016年第6期32卷 1088-1103页

作者： T. F. Xu Y. F. Xing Institute of solid Mechanics Beihang UniversityBeijing 100191 China China Academy of Launch Vehicle Technology r&d center Beijing 100076 China

This article presents closed-form solutions for the frequency analysis of rectangular functionally graded material (FGM) thin plates subjected to initially in-plane loads and with an elastic foundation. Based on classical thin plate theory, the governing differential equations are derived using Hamilton's principle. A neutral surface is used to eliminate stretching-bending coupling in FGM plates on the basis of the assumption of constant Poisson's ratio. The resulting governing equation of FGM thin plates has the same form as homogeneous thin plates. The separation-of-variables method is adopted to obtain solutions for the free vibration problems of rectangular FGM thin plates with separable boundary conditions, including, for example, clamped plates. The obtained normal modes and frequencies are in elegant closed forms, and present formulations and solutions are validated by comparing present results with those in the literature and finite element method results obtained by the authors. A parameter study reveals the effects of the power law index n and aspect ratio a/b on frequencies.

关键词： Functionally graded material Free vibration rectangular plate Close form solutions Neutral surface

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Fast parallel algorithm for three-dimensional distance-driven model in iterative computed tomography reconstruction

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Chinese Physics B 2015年第2期24卷 513-520页

作者：陈建林李磊王林元蔡爱龙席晓琦张瀚铭李建新闫镔 National digital Switching System Engineering & Technological r&d center

The projection matrix model is used to describe the physical relationship between reconstructed object and *** a model has a strong influence on projection and backprojection,two vital operations in iterative computed tomographic *** distance-driven model（ddM） is a state-of-the-art technology that simulates forward and back *** model has a low computational complexity and a relatively high spatial resolution;however,it includes only a few methods in a parallel operation with a matched model *** study introduces a fast and parallelizable algorithm to improve the traditional ddM for computing the parallel projection and backprojection *** proposed model has been implemented on a GPU（graphic processing unit） platform and has achieved satisfactory computational efficiency with no *** runtime for the projection and backprojection operations with our model is approximately 4.5 s and 10.5 s per loop,respectively,with an image size of 256×256×256 and 360 projections with a size of 512×*** compare several general algorithms that have been proposed for maximizing GPU efficiency by using the unmatched projection/backprojection models in a parallel *** imaging resolution is not sacrificed and remains accurate during computed tomographic reconstruction.

关键词： computed tomography iterative reconstruction parallelizable algorithm distance-driven model

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Flexible molecules dedicate to release strain of inverted inorganic perovskite solar cell

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Journal of Energy Chemistry 2025年第1期100卷 87-93页

作者： Hongrui Sun Sanlong Wang Pengyang Wang Yali Liu Shanshan Qi Biao Shi Ying Zhao Xiaodan Zhang Institute of Photoelectronic Thin Film devices and Technology Renewable Energy Conversion and Storage Center State Key Laboratory of Photovoltaic Materials and CellsNankai University Key Laboratory of Photoelectronic Thin Film devices and Technology of Tianjin Haihe Laboratory of Sustainable Chemical Transformations Engineering research center of Thin Film Photoelectronic Technology of Ministry of Education Collaborative Innovation center of Chemical Science and Engineering (Tianjin)

The tensile strain in inorganic perovskite films induced by thermal annealing is one of the primary factors contributing to the inefficiency and instability of inorganic perovskite solar cells （IPSCs）,which reduces the defect formation ***,a flexible molecule 5-maleimidovaleric acid （5-MVA） was introduced as a strain buffer to release the residual strain of *** anhydride and carboxyl groups in 5-MVA interact strongly with the uncoordinated Pb2+through Lewis acid-base reaction,thus tightly“pull”the perovskite *** in-between soft carbon chain increased the structural flexibility of CsPbI2.85Br0.15perovskite materials,which effectively relieved the intrinsic internal strain of CsPbI2.85Br0.15,resisted the corrosion of external strain,and also reduced the formation of defects such as VIand *** addition,the introduction of 5-MVA improved crystal quality,passivated residual defects,and narrowed energy level ***,power conversion efficiency （PCE） of NiOxbased inverted IPSCs increased from 19.25% to 20.82% with the open-circuit voltage enhanced from 1.164 V to 1.230 *** release of strain also improved the stability of CsPbI2.85Br0.15perovskite films and devices.

关键词： Inverted inorganic perovskite solar cells Flexible molecules Strain release Crystallization Energy barrier High PCE

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