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A combinatorial approach of developing alloy thin films using co-sputtering technique for displays

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science China(Technological sciences) 2009年第1期52卷 79-87页

作者： Jaydeep sARKAR Tien-Heng HUANG Lih-Ping WANG Peter H. McDONALD Chi-Fung LO Paul s. GILMAN praxair Electronics 560 Route 303 Orangeburg Materials and Chemical Research Laboratories Photovoltaic Technology Center Industrial Technology Research Institute (ITRI)

In this study we have used a combinatorial approach for producing binary and ternary alloy thin film libraries using a lab-scale RF co-sputtering system. Initially we used two elemental sputtering targets, i.e. aluminum (Al) target and neodymium (Nd) target, to produce a film library of varying composition and successfully identified a suitable composition range (1.95–2.38 at% Nd) in which resistance to hillock formation and resistivity of the film spots were found to be satisfactory in annealed state (350°C, 30 min). In another case, in order to form ternary alloy composition library we have used two sputtering targets, i.e. an Al-0.5 at% Nd alloy target and an elemental Ni target. Though, co-sputtered Al-0.6 at% Nd-0.9 at% Ni alloy films showed satisfactory resistance to hillock formation and low resistivity after annealing, film deposited from a ternary alloy target with the same composition failed to show satisfactory resistance to hillock formation during annealing. In case of Al-0.6 at% Nd-0.9 at% Ni alloy target, 250 nm thick film showed poor resistance to hillock formation than the 500 nm thick film. This clearly showed thickness-dependent hillock performance of Al-0.6 at% Nd-0.9 at% Ni alloy. In this study it was found that, in addition to the process variables, metallurgical microstructure of the alloy sputtering targets had significant effect on the film properties which was not obvious from the results of films deposited using co-sputtering of the individual elemental targets.

关键词： co-sputtering thin films aluminum alloys displays

Preparation and Characterization of TaN ALD Precursors

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半导体技术 2004年第7期29卷 82-85,91页

作者： Tracy Yund Cynthia A. Hoover praxair Inc. 175 E. Park Dr. Tonawanda NY 14150Praxair Inc. 175 E. Park Dr. Tonawanda NY 14150

High purity organic-tantalum precursors forthin film ALD TaN were synthesized andcharacterized. Vapor pressure and thermal stabilityof these precursors were studied. From the vaporpressure analysis, it was found that TBTEMT has ahigher vapor pressure than any other published liq-uid TaN precursor, including TBTDET,TAITMATA,and IPTDET. Thermal stability of the alkyl groupson the precursors was investigated using a 1H NMRtechnique. The results indicated that the tert-butylimino group is the most stable group onTBTDET and TBTEMT as compared to thedialkylamido groups. Thermal stability of TaN pre-cursors decreased in the following order: TBTDET> PDMAT > TBTEMT. In conclusion, precursor va-por pressure and thermal stability were tuned bymaking slight variations in the ligand sphere aroundthe metal center.

关键词：热稳定性汽压分析 TBTDET PDMAT TBTEMT TaN ALD

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praxair“A”型纯氧烧嘴

工业炉 2001年第1期23卷 54-57页

作者： R.A.Browning,张琪渔 Union Carbide Corporation Linde Division.现为Praxair公司.

早在1977年，由于燃料价格飞涨，praxair开发了纯氧燃烧系统，用于均热炉，连续或非连续加热炉之类的高温加热炉，达到节约燃料，减少NOX排放和提高生产率目的。节约燃料达44％～64％。1978年，praxair A型烧嘴系统构思形成，并进行了... 详细信息

早在1977年，由于燃料价格飞涨，praxair开发了纯氧燃烧系统，用于均热炉，连续或非连续加热炉之类的高温加热炉，达到节约燃料，减少NOX排放和提高生产率目的。节约燃料达44％～64％。1978年，praxair A型烧嘴系统构思形成，并进行了实验室试验。A型烧嘴产生的火焰温度可等于、大于或小于传统空气烧嘴产生的温度。实验室实验证实A型烧嘴在控制温度分布的灵活性。1980年，A型烧嘴系统迈出了商业化的第一步，被用在美国宾州C钢厂棒材轧机的间歇式加热炉，进行大生产试验。由于试验成功，1981年该厂全部五个加热炉都改用A型烧嘴加热系统。1982年又进行了两个大生产试验。美国A钢厂的一台均热炉成功地改为A型烧嘴系统。A型烧嘴系统也成功地应用在美国U．s钢厂的400 mm板材间歇加热炉(原先有同流换热器)，使用焦炉气作为燃料。U．s钢厂继续使用试验期的A型烧嘴系统，直到1985年才替换为商用A型烧嘴系统。1984年，在美国Ⅰ钢厂4＃厚坯轧机的均热炉上又进行了一次试验。U．s钢厂在1984年又将第二台带同流换热器的间歇加热炉改为A型烧嘴系统。这是这一工厂中第二个改用A型烧嘴的加热炉。1985年，进行了首次非钢应用的试验。K铜厂阳极炉和法国s公司玻璃炉窑被转化为A型烧嘴系统。1985年，首台轧钢连续加热炉转化成A型烧嘴系统。U．s钢厂的5段加热区的棒材轧机连续加热炉中的2段被成功地转为A型烧嘴系统。

关键词：烧嘴燃料节约 praxair 火焰温度加热炉热处理炉氧气系统

Origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid

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Chinese Physics B 2011年第3期20卷 497-504页

作者：王良咏刘波宋志棠刘卫丽封松林黄丕成 s.V Babu Laboratory of Nanotechnology Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences Department of Chemical and Bimolecular Engineering and Centre for Advanced Materials Processing Clarkson University Potsdam New York 13699USA praxair Electronics 1555 Main StreetIndianapolis 46224USA Department of Chemical and Bimolecular Engineering and Centre for Advanced Materials Processing Clarkson UniversityPotsdam New York 13699USA

We report on the investigation of the origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid. The oxide to nitride removal selectivity of the ceria slurry with picolinic acid is as high as 76.6 in the chemical mechanical polishing. By using zeta potential analyzer, particle size analyzer, horizon profilometer, thermogravimetric analysis and Fourier transform infrared spectroscopy, the pre- and the post-polished wafer surfaces as well as the pre- and the post-used ceria-based slurries are compared. Possible mechanism of high oxide to nitride selectivity with using ceria-based slurry with picolinic acid is discussed.

关键词： chemical mechanical polishing ceria oxide over nitride selectivity origin

A combinatorial approach of developing alloy thin films using co-sputtering technique for displays

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中国科学:技术科学 2010年第4期40卷 439-439页

作者： Jaydeep sARKAR Tien-Heng HUANG Lih-Ping WANG Peter H.McDONALD Chi-Fung LO Paul s.GILMAN praxair Electronics Materials and Chemical Research Laboratories Photovoltaic Technology CenterIndustrial Technology Research Institute(ITRI)

In this study we have used a combinatorial approach for producing binary and ternary alloy thin film libraries using a lab-scale RF co-sputtering *** we used two elemental sputtering targets,***(Al) target and neodymium(Nd) target,to produce a film library of varying composition and successfully identified a suitable composition range(1.95-2.38 at%Nd) in which resistance to hillock formation and resistivity of the film spots were found to be satisfactory in annealed state(350°C,30 min) .In another case,in order to form ternary alloy composition library we have used two sputtering targets,*** Al-0.5 at%Nd alloy target and an elemental Ni ***,co-sputtered Al-0.6 at% Nd-0.9 at%Ni alloy films showed satisfactory resistance to hillock formation and low resistivity after annealing,film deposited from a ternary alloy target with the same composition failed to show satisfactory resistance to hillock formation during *** case of Al-0.6 at%Nd-0.9 at%Ni alloy target,250 nm thick film showed poor resistance to hillock formation than the 500 nm thick *** clearly showed thickness-dependent hillock performance of Al-0.6 at%Nd-0.9 at%Ni *** this study it was found that,in addition to the process variables,metallurgical microstructure of the alloy sputtering targets had significant effect on the film properties which was not obvious from the results of films deposited using co-sputtering of the individual elemental targets.

关键词： co-sputtering thin films aluminum alloys displays

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TaN薄膜原子层淀积(英文)

电子工业专用设备 2004年第4期33卷 18-22页

作者： Tracy Yund Cynthia A. Hoover praxair Inc. 175 E. Park Dr. Tonawanda NY 14150Praxair Inc. 175 E. Park Dr. Tonawanda NY 14150

我们成功合成了TaN薄膜原子层淀积的高纯有机钽先驱物并使其特性化,同时对这些先驱物的汽压和热稳定性进行了研究。根据汽压分析发现,TBTEMT比所有其它已发表的液体TaN先驱物(包括TBTDET、TAITMATA和IPTDET)具有更高的汽压。用1HNMR技... 详细信息

我们成功合成了TaN薄膜原子层淀积的高纯有机钽先驱物并使其特性化,同时对这些先驱物的汽压和热稳定性进行了研究。根据汽压分析发现,TBTEMT比所有其它已发表的液体TaN先驱物(包括TBTDET、TAITMATA和IPTDET)具有更高的汽压。用1HNMR技术研究了这些烷基先驱物的热稳定性。结果表明,与乙二烯基先驱物相比,对于TBTDET和TBTEMT材料,特丁基群是最稳定的基群。TaN先驱物热稳定性按以下次序下降:TBTDET>PDMAT>TBTEMT。最后,通过对金属中央周围的配合基体进行轻微的调整使先驱物汽压和热稳定性处于良好的状态。

关键词： TaN薄膜铜阻挡层原子层淀积汽压热稳定性有机钽先驱物