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A combinatorial approach of developing alloy thin films using co-sputtering technique for displays

Science China(Technological Sciences) 2009年第1期52卷 79-87页

作者： Jaydeep SARKAR Tien-Heng HUANG Lih-Ping WANG Peter H. McDONALD Chi-Fung LO Paul S. GILMAN praxair electronics 560 Route 303 Orangeburg Materials and Chemical Research Laboratories Photovoltaic Technology Center Industrial Technology Research Institute (ITRI)

In this study we have used a combinatorial approach for producing binary and ternary alloy thin film libraries using a lab-scale RF co-sputtering system. Initially we used two elemental sputtering targets, i.e. aluminum (Al) target and neodymium (Nd) target, to produce a film library of varying composition and successfully identified a suitable composition range (1.95–2.38 at% Nd) in which resistance to hillock formation and resistivity of the film spots were found to be satisfactory in annealed state (350°C, 30 min). In another case, in order to form ternary alloy composition library we have used two sputtering targets, i.e. an Al-0.5 at% Nd alloy target and an elemental Ni target. Though, co-sputtered Al-0.6 at% Nd-0.9 at% Ni alloy films showed satisfactory resistance to hillock formation and low resistivity after annealing, film deposited from a ternary alloy target with the same composition failed to show satisfactory resistance to hillock formation during annealing. In case of Al-0.6 at% Nd-0.9 at% Ni alloy target, 250 nm thick film showed poor resistance to hillock formation than the 500 nm thick film. This clearly showed thickness-dependent hillock performance of Al-0.6 at% Nd-0.9 at% Ni alloy. In this study it was found that, in addition to the process variables, metallurgical microstructure of the alloy sputtering targets had significant effect on the film properties which was not obvious from the results of films deposited using co-sputtering of the individual elemental targets.

关键词： co-sputtering thin films aluminum alloys displays

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Origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid

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Chinese Physics B 2011年第3期20卷 497-504页

作者：王良咏刘波宋志棠刘卫丽封松林黄丕成 S.V Babu Laboratory of Nanotechnology Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences Department of Chemical and Bimolecular Engineering and Centre for Advanced Materials Processing Clarkson University Potsdam New York 13699USA praxair electronics 1555 Main StreetIndianapolis 46224USA Department of Chemical and Bimolecular Engineering and Centre for Advanced Materials Processing Clarkson UniversityPotsdam New York 13699USA

We report on the investigation of the origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid. The oxide to nitride removal selectivity of the ceria slurry with picolinic acid is as high as 76.6 in the chemical mechanical polishing. By using zeta potential analyzer, particle size analyzer, horizon profilometer, thermogravimetric analysis and Fourier transform infrared spectroscopy, the pre- and the post-polished wafer surfaces as well as the pre- and the post-used ceria-based slurries are compared. Possible mechanism of high oxide to nitride selectivity with using ceria-based slurry with picolinic acid is discussed.

关键词： chemical mechanical polishing ceria oxide over nitride selectivity origin

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维普期刊数据库

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A combinatorial approach of developing alloy thin films using co-sputtering technique for displays

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中国科学:技术科学 2010年第4期40卷 439-439页

作者： Jaydeep SARKAR Tien-Heng HUANG Lih-Ping WANG Peter H.McDONALD Chi-Fung LO Paul S.GILMAN praxair electronics Materials and Chemical Research Laboratories Photovoltaic Technology CenterIndustrial Technology Research Institute(ITRI)

In this study we have used a combinatorial approach for producing binary and ternary alloy thin film libraries using a lab-scale RF co-sputtering *** we used two elemental sputtering targets,***(Al) target and neodymium(Nd) target,to produce a film library of varying composition and successfully identified a suitable composition range(1.95-2.38 at%Nd) in which resistance to hillock formation and resistivity of the film spots were found to be satisfactory in annealed state(350°C,30 min) .In another case,in order to form ternary alloy composition library we have used two sputtering targets,*** Al-0.5 at%Nd alloy target and an elemental Ni ***,co-sputtered Al-0.6 at% Nd-0.9 at%Ni alloy films showed satisfactory resistance to hillock formation and low resistivity after annealing,film deposited from a ternary alloy target with the same composition failed to show satisfactory resistance to hillock formation during *** case of Al-0.6 at%Nd-0.9 at%Ni alloy target,250 nm thick film showed poor resistance to hillock formation than the 500 nm thick *** clearly showed thickness-dependent hillock performance of Al-0.6 at%Nd-0.9 at%Ni *** this study it was found that,in addition to the process variables,metallurgical microstructure of the alloy sputtering targets had significant effect on the film properties which was not obvious from the results of films deposited using co-sputtering of the individual elemental targets.

关键词： co-sputtering thin films aluminum alloys displays

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