检索结果-南通市图书馆

data-driven Healthcare:The role of Computational Methods in Medical Innovation

Computer Modeling in Engineering & Sciences 2025年第1期142卷 1-48页

作者： Hariharasakthisudhan Ponnarengan Sivakumar rajendran Vikas Khalkar Gunapriya devarajan Logesh Kamaraj department of Mechanical Engineering Dr.Mahalingam College of Engineering and TechnologyPollachiCoimbatoreTamil Nadu642003India department of Mechanical Engineering JKKN College of Engineering and TechnologyKumarapalayamNamakkalTamil Nadu637209India department of Mechanical Engineering Gharda Institute of TechnologyLavelMaharashtra415708India department of Electrical and Electronics Engineering Sri Eshwar College of EngineeringCoimbatoreTamilnadu641202India department of Mechanical Engineering Vel Tech Rangarajan Dr.Sagunthala R&D Institute of Science and TechnologyChennai600062India

The purpose of this review is to explore the intersection of computational engineering and biomedical science,highlighting the transformative potential this convergence holds for innovation in healthcare and medical *** review covers key topics such as computational modelling,bioinformatics,machine learning in medical diagnostics,and the integration of wearable technology for real-time health *** findings indicate that computational models have significantly enhanced the understanding of complex biological systems,while machine learning algorithms have improved the accuracy of disease prediction and *** synergy between bioinformatics and computational techniques has led to breakthroughs in personalized medicine,enabling more precise treatment ***,the integration of wearable devices with advanced computational methods has opened new avenues for continuous health monitoring and early disease *** review emphasizes the need for interdisciplinary collaboration to further advance this *** research should focus on developing more robust and scalable computational models,enhancing data integration techniques,and addressing ethical considerations related to data privacy and *** fostering innovation at the intersection of these disciplines,the potential to revolutionize healthcare delivery and outcomes becomes increasingly attainable.

关键词： Computational models biomedical engineering bioinformatics machine learning wearable technology

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

research on Friction Properties of Mineral Lubricants in Thin-Film-Lubricating regime

引用

China Petroleum Processing & Petrochemical Technology 2014年第1期16卷 90-95页

作者： Zhang Jie Guan Tingting Piao Jicheng Lubricants r&d institute PetroChina

On the basis of thin film lubrication theory, the influence of fluid film(disordered film), ordered film and adsorbed film on tribological behavior of lubricating oil in thin-film lubrication(TFL) regime was studied. The μ-L(friction coefficient versus load) curves of different oil viscosity and additive dosage were obtained by a high frequency reciprocating test rig and the adsorption capacity of additive on steel surface were measured by QCM-d. Based on the Stribeck curve and thin film lubrication theory model, some conclusions can be drawn up, namely:(1) The μ-L curves and the parameters of L0 and μ0, obtained from the high frequency reciprocating test rig with ball-disc contact, can be used to study tribological behaviors of lubricating oil under TFL conditions.(2) In comparison with the high viscosity base fluid, the lower one can enter into TFL regime under lower load and keeps a lower friction coefficient in TFL regime.(3) The polar molecules in additive formulation produce ordered adsorbed layer on steel surface to reduce friction coefficient. And in TFL regime, the molecule's polarity, layer thickness and saturation degree on steel surface probably can influence lubricant's tribological behaviors between the moving interfaces. Moreover, the further study would be focused on the competitive adsorption of different additives, the formation of dual- and/or tri-molecular adsorption layers, and other aspects.

关键词： thin film lubrication(TFL) adsorption film quartz crystal microbalance with dissipation monitoring(QCM-d) Stribeck curve mineral lubricants

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Influence of growth conditions on the V-defects in InGaN/GaN MQWs

引用

Journal of Semiconductors 2011年第10期32卷 17-21页

作者：纪攀峰刘乃鑫魏学成刘喆路红喜王军喜李晋闽 Semiconductor Lighting r&d Center Institute of SemiconductorsChinese Academy of Sciences

The influence of the growth temperature,TMIn/TEGa andⅤ/Ⅲratio on the V-defects of InGaN/GaN multi-quantum wells（MQWs） has been investigated and *** the TMIn flow increases from 180 to 200 sccm,the density of V-defects increases from 2.72×10^（18） to 5.24×10^（18） cm^（-2）,and the V-defect width and depth increase *** density also increases with the growth *** densities are 2.05×10~8,2.72×10^（18） and 4.23×10~8 cm^（-2）,corresponding to a growth temperature of 748,753 and 758℃*** the NH_3 flows are 5000,6600 and 8000 sccm,the densities of the V-defects of these samples are 6.34×10^（18）,2.72×10^（18） and 4.13×10^（18） cm^（-2）,respectively.A properⅤ/Ⅲratio is needed to achieve step flow growth *** get the best quality of InGaN/GaN MQWs at a growth temperature of 753℃TMIn flow at 180 sccm,NH_3 flow at 6600 sccm,a flatter surface and less V-defects *** depths of these V-defects are from 10 to 30 nm,and the widths are from 100 to 200 *** order to suppress the influence of V-defects on reverse current and electro-static discharge of LEds,it is essential to grow thicker p-GaN to fill the V-defects.

关键词： V-defect density width depth TMIn/TEGa NH_3 temperature

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Improvement of the efficiency droop of GaN-LEds using an AlGaN/GaN superlattice insertion layer

引用

Journal of Semiconductors 2011年第11期32卷 65-68页

作者：纪攀峰刘乃鑫魏同波刘喆路红喜王军喜李晋闽 Semiconductor Lighting r&d Center Institute of SemiconductorsChinese Academy of Sciences

With an n-A1GaN （4 nm）/GaN （4 nm） superlattice （SL） inserted between an n-GaN and an InGaN/GaN multiquantum well active layer, the efficiency droop of GaN-based LEds has been improved. When the injection current is lower than 100 mA, the lumen efficiency of the LEd with an n-AlGaN/GaN SL is relatively small compared to that without an n-AlGaN/GaN SL. However, as the injection current increases more than 100 mA, the lumen efficiency of the LEd with an n-A1GaN/GaN SL surpasses that of an LEd without an n-AlGaN/GaN SL. The wall plug efficiency of an LEd has the same trend as lumen efficiency. The improvement of the efficiency droop of LEds with n-AIGaN/GaN SLs can be attributed to a decrease in electron leakage due to the enhanced current spreading ability and electron blocking effect at high current densities. The reverse current of LEds at -5 V reverse voltage decreases from 0.2568029 to 0.0070543 μA, and the electro-static discharge （ESd） pass yield of an LEd at human body mode （HBM）-ESd impulses of 2000 V increases from 60% to 90%.

关键词： n-AlGaN/GaN superlattices wall plug efficiency droop reverse current

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

MOCVd epitaxy of InAlN on different templates

引用

Journal of Semiconductors 2011年第9期32卷 24-28页

作者：贠利君魏同波闫建昌刘喆王军喜李晋闽 r&d Center for Semiconductor Lighting Institute of SemiconductorsChinese Academy of Sciences

InAlN epilayers were grown on high quality GaN and A1N templates with the same growth parameters. Measurement results showed that two samples had the same In content of～16%,while the crystal quality and surface topography of the InAlN epilayer grown on the AlN template,with 282.3＂（002） full width at half maximum （FWHM） of rocking curve,313.5＂（102） FWHM,surface roughness of 0.39 nm and V-pit density of 2.8×10~8 cm^（-2）,were better than that of the InAlN epilayer grown on the GaN template,309.3＂,339.1＂,0.593 nm and 4.2×10~8 cm^（-2）.A primary conclusion was proposed that both the crystal quality and the surface topography of the InAlN epilayer grown on the AlN template were better than that of the InAlN epilayer grown on the GaN template. Therefore,the AlN template was a better choice than the GaN template for getting high quality InAlN epilayers.

关键词： InAlN epilayer template crystal quality surface topography

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Light extraction efficiency enhancement of GaN-based light emitting diodes by a ZnO current spreading layer

引用

Journal of Semiconductors 2009年第9期30卷 29-32页

作者：杨华王晓峰阮军李志聪伊晓燕段垚曾一平王国宏 r&d Center for Semiconductor Lighting Institute of SemiconductorsChinese Academy of Sciences

Gallium nitride （GaN） based light emitting diodes （LEds） with a thick and high quality ZnO film as a current spreading layer grown by metal-source vapor phase epitaxy （MVPE） are fabricated successfully. Compared with GaN-based LEds employing a Ni/Au or an indium tin oxide transparent current spreading layer, these LEds show an enhancement of the external quantum efficiency of 93% and 35% at a forward current of 20 mA, respectively. The full width at half maximum of the ZnO （002） ω-scan rocking curve is 93 arcsec, which corresponds to a high crystal quality of the ZnO film. Optical microscopy and atomic force microscopy are used to observe the surface morphology of the ZnO film, and many regular hexagonal features are found. A spectrophotometer is used to study the different absorption properties between the ZnO film and the indium tin oxide film of the GaN LEd. The mechanisms of the extraction quantum efficiency increase and the series resistance change of the GaN-based LEds with ZnO transparent current spreading layers are analyzed.

关键词： GaN LEd ZnO extraction efficiency transparent electrode

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Evidence supporting the relationship between maternal asthma and risk for autism spectrum disorders

引用

Neural regeneration research 2025年第4期20卷 1101-1102页

作者： Hadley Osman Paul Ashwood department of Medical Microbiology and Immunology and the M.I.N.D.InstituteUniversity of California at DavisSacramentoCAUSA

during pregnancy,maternal immune activation(MIA),due to infection,chronic inflammatory disorders,or toxic exposures,can result in lasting health impacts on the developing *** has been associated with an increased risk of neurodevelopmental disorders,such as autism spectrum disorder(ASd)in the *** is characterized by increased repetitive and stereotyped behaviors and decreased *** of 2020,1 in 36 children are diagnosed with ASd by the age of 8 years,with ASd rates continuing to increase in prevalence in USA(Tamayo et al.,2023).Post-mortem brain studies,biomarker and transcriptomic studies,and epidemiology studies have provided compelling evidence of immune dysregulation in the circulation and brain of individuals diagnosed with ***,the etiology of ASd is largely unknown,however,genetic components and environmental factors can contribute to increased *** allergic asthma(MAA),a form of MIA,has been identified as a potential risk factor for developing neurodevelopmental disorders(Patel et al.,2020).Asthma is a chronic inflammatory condition driven by a T-helper type(TH)2 immune response.

关键词： disorders epidemiology fetus

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

realization of MMI Power Splitter by UV-light Imprinting Technique Using Hybrid Sol-Gel SiO2 Materials

引用

Chinese Physics Letters 2008年第10期25卷 3693-3695页

作者：王玥吴远大李建光王红杰胡雄伟 r&d Center of Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Beijing 100083

An efficient fabrication scheme of buried ridge waveguide devices is demonstrated by UV-light imprinting technique using organic-inorganic hybrid sol-gel Zr-doped SiO2 materials. The refractive indices of a guiding layer and a cladding layer for the buried ridge waveguide structure are 1.537 and 1.492 measured at 1550nm, respectively. The tested results show more circular mode profiles due to existence of the cladding layer. A buried ridge single-mode waveguide operating at 1550 nm has a low propagation loss （0.088 dB/cm） and the 1× 2 MMI power splitter exhibits uniform outputs, with a very iow splitting loss of 0.029 dB at 1549nm.

关键词： the power-law exponents precipitation durative abrupt precipitation change

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Flexible Control of Light Propagation Using a Novel Photonic Crystal Hetero-Waveguide Based on Silicon-on-Insulator Slab

引用

Chinese Physics Letters 2008年第11期25卷 4023-4025页

作者：王玥吴远大张家顺胡雄伟 r&d Center of Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Beijing 100083

We demonstrate a photonic crystal hetero-waveguide based on silicon-on-insulator （SOI） slab, consisting of two serially connected width-reduced photonie crystal waveguides with different radii of the air holes adjacent to the waveguide. We show theoretically that the transmission window of the structure corresponds to the transmission range common to both waveguides and it is in inverse proportion to the discrepancy between the two waveguides. Also the group velocity of guided mode can be changed from low to high or high to low, depending on which port of the structure the signal is input from just in the same device, and the variation is proportional to the discrepancy between the two waveguides. Using this novel structure, we realize flexible control of transmission window and group velocity of guided mode simultaneously.

关键词： the power-law exponents precipitation durative abrupt precipitation change

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Electrochemical preparation of silicon nanowires from porous Ni/SiO2 blocks in molten CaCl2

引用

rare Metals 2019年第8期38卷 776-782页

作者： Sheng Fang Han Wang Juan-Yu Yang Shi-Gang Lu Bing Yu Jian-Tao Wang Chun-rong Zhao r&d Center for Vehicle Battery and Energy Storage General Research Institute for Nonferrous Metals

Silicon nanowires(SiNWs)with diameter distributions ranging from 80 to 350 nm were prepared by electrochemical reduction of Ni/SiO2 in molten *** effect of the content of nickel additives on the morphology of produced silicon was *** quantities of SiNWs are obtained by the electrochemical reduction of Ni/SiO2 blocks with SiO2 to Ni molar ratio of 20 and *** additives repress the growth of irregular branches and promote longitudinal growth of *** morphologies and surfaces are influenced by the electrolysis *** become thicker with the increase of the electrolysis *** optimum temperature to prepare single crystal SiNWs with high aspect ratio and extraordinary surface quality seems to be 1173 *** amorphous layer of the silicon nanowire is thinner compared to the SiNWs obtained from the pure SiO2 *** produced SiNWs show a photoluminescence emission peak at about 758 nm at room *** work demonstrates the potentiality for the electrochemical reduction process to obtain large quantities of SiNWs with high quality.

关键词： Silicon nanowire Nickel additives SiO2 CaCl2 Electrochemical reduction

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：