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Frequency Performance of Ring Oscillators Based on a-IGZO Thin-Film Transistors

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Chinese Physics Letters 2015年第4期32卷 97-100页

作者：于广武辰飞陆海任芳芳张荣郑有炓黄晓明 Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and EngineeringNanjing University Collaborative Innovation center of Advanced Microstructures Nanjing University peter griinberg research center Nanjing University of Posts and Telecommunications

Ring oscillators based on indium gallium zinc oxide thin film transistors are fabricated on glass substrates. The oscillator circuit consists of seven delay stages and an output buffer inverter. The element inverter exhibits a voltage gain higher than -6 V/V and a wide output swing close to 85% of the full swing range. The dynamic performance of the ring oscillators is evaluated as a function of supply voltage and at different gate lengths. A maximum oscillation frequency of 0.88MHz is obtained for a supply voltage of 50V, corresponding to a propagation delay of less than 85 ns/stage.

关键词： Frequency Performance of Ring Oscillators Based on a-IGZO Thin-Film Transistors

The Effect of Oxygen Partial Pressure during Active Layer Deposition on Bias Stability of a-InGaZnO TFTs

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Chinese Physics Letters 2015年第7期32卷 171-174页

作者：黄晓明武辰飞陆海任芳芳朱洪波王永进 peter griinberg research center Nanjing University of Posts and Telecommunications Nanjing 210003 Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering Nanjing University Nanjing 210093

The effect of oxygen partial pressure （Po2） during the channel layer deposition on bias stability of amorphous indium-gallium-zinc oxide （a-IGZO） thin film transistors （TFTs） is investigated. As Po2 increases from 10% to 30%, it is found that the device shows enhanced bias stress stability with significantly reduced threshold voltage drift under positive gate bias stress. Based on the x-ray photoelectron spectroscopy measurement, the concentration of oxygen vacancies （Or） within the a-IGZO layer is suppressed by increasing Po2. Meanwhile, the low-frequency noise analysis indicates that the average trap density near the channel/dielectric interface continuously drops with increasing Po2. Therefore, the improved interface quality with increasing Po2 during the channel layer deposition can be attributed to the reduction of interface Ov-related defects, which agrees with the enhanced bias stress stability of the a-IGZO TFTs.

关键词： TFT The Effect of Oxygen Partial Pressure during Active Layer Deposition on Bias Stability of a-InGaZnO TFTs

On-chip optical interconnect using visible light

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Frontiers of Information Technology & Electronic Engineering 2017年第9期18卷 1288-1294页

作者： Wei CAI Bing-cheng ZHU Xu-min GAO Yong-chao YANG Jia-lei YUAN Gui-xia ZHU Yong-jin WANG peter GRUNBERG peter griinberg research center Nanjing University of Posts and Telecommunications Nanjing 210003 China School of Computer Engineering Nanjing Institute of Technology Nanjing 211167 China

We propose and fabricate a monolithic optical interconnect on a GaN-on-silicon platform using a wafer-level technique. Because the InGaN/GaN mukiple-quantum-well diodes （MQWDs） can achieve light emission and detection simultaneously, the emitter and collector sharing identical MQW structure are produced using the same process. Suspended waveguides interconnect the emitter with the collector to form in-plane light coupling. Monolithic optical interconnect chip integrates the emitter, waveguide, base, and collector into a multi-component system with a common base. Output states superposition and 1 × 2 in-piane light communication are experimentally demonstrated. The proposed monolithic optical interconnect opens a promising way toward the diverse applications from in-plane visible light communication to light-induced imaging, and optical sensing. artificial synaptic devices, intelligent display, on-chip

关键词： Homogeneous integration Multiple-quantum-well diode Visible light interconnection Coexistence oflight emission and photodetection

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多共振峰圆形光栅滤波器

光学精密工程 2017年第12期25卷 3056-3062页

作者：王永进秦川高绪敏张锋华南京邮电大学peter griinberg研究中心江苏南京210003

提出了一种导模共振圆形光栅滤波器,以实现它在可见光范围内的多波段滤波。理论分析了圆形光栅滤波器在同一入射波偏振条件下形成多个共振峰的原因。通过微纳加工技术在硅基二氧化铪材料上实现了光栅层约为70nm的圆形光栅薄膜结构。利... 详细信息

提出了一种导模共振圆形光栅滤波器,以实现它在可见光范围内的多波段滤波。理论分析了圆形光栅滤波器在同一入射波偏振条件下形成多个共振峰的原因。通过微纳加工技术在硅基二氧化铪材料上实现了光栅层约为70nm的圆形光栅薄膜结构。利用一维线性光栅对圆形光栅的反射谱进行了模拟,通过角分辨微纳反射谱测试系统获得了该光栅滤波器在不同入射波偏振条件以及不同入射角时的反射谱。实验表明,在特定的光栅周期以及占空比条件下(如光栅周期350nm,占空比0.5),当线性偏振光正入射时,该圆形光栅滤波器形成了两个共振峰(505nm处和575nm处),与模拟结果基本符合。另外,光栅占空比相同时,随着光栅周期的增加,共振峰会向较长的波段偏移。实验显示:通过设计不同结构的亚波长圆形光栅,可以实现可见光范围内多个特定波段的滤波作用。

关键词：衍射光栅亚波长结构微纳加工导模共振光栅滤波器

Transport in graphene nanostructures

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Frontiers of physics 2011年第3期6卷 271-293页

作者： Christoph Stampfer Stefan Fringes Johannes Gfittinger Francoise Molitor Christian Yolk Bernat Terrds Jan Dauber Stephan Engels Stefan Schnez Arnhild Jacobsen Susanne Droscher Thomas Ihn Klaus Ensslin JARA-FIT and II. Institute of Physics B RWTH Aachen University 52074 Aachen and Peter Griinberg Institute （PCI-9） Forschungszentrum Jiilich 52425 Jiilich Germany Solid State Physics Laboratory ETH Zurich 8093 Zurich Switzerland

Graphene nanostructures are promising candidates for future nanoelectronics and solid-state quan- tum information technology. In this review we provide an overview of a number of electron transport experiments on etched graphene nanostructures. We briefly revisit the electronic properties and the transport characteristics of bulk, i.e., two-dimensional graphene. The fabrication techniques for making graphene nanostructures such as nanoribbons, single electron transistors and quantum dots, mainly based on a dry etching ＂paper-cutting＂ technique are discussed in detail. The limitations of the current fabrication technology are discussed when we outline the quantum transport properties of the nanostructured devices. In particular we focus here on transport through graphene nanoribbons and constrictions, single electron transistors as well as on graphene quantum dots including dou- ble quantum dots. These quasi-one-dimensional （nanoribbons） and quasi-zero-dimensional （quantum dots） graphene nanostructures show a clear route of how to overcome the gapless nature of graphene allowing the confinement of individual carriers and their control by lateral graphene gates and charge detectors. In particular, wo emphasize that graphene quantum dots and double quantum dots are very promising systems for spin-based solid state quantum computation, since they are believed to have exceptionally long spin coherence times due to weak spin-orbit coupling and weak hyperflne interaction in graphene.

关键词： graphene nanostructures electron transport quantum dots

Tight-binding models for ultracold atoms in optical lattices：general formulation and applications

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Science China(Physics,Mechanics & Astronomy) 2016年第6期59卷 1-23页

作者： Michele Modugno Julen Ibanez-Azpiroz Giulio Pettini Departamento de Fisica Teorica e Historia de la Ciencia Universidad del Pais Vasco UPV/EHU Bilbao 48080 Spain IKERBASQUE Basque Foundation for Science Bilbao 48011 Spain peter griinberg Institute and Institute for Advanced Simulation Forschungszentrum Jiilich & JARA Jiilich D-52425 Germany Dipartimento di Fisica e Astronomia Universita di Firenze and INFN Sesto Fiorentino 50019 Italy

Tight-binding models for ultracold atoms in optical lattices can be properly defined by using the concept of maximally localized Wannier functions for composite bands. The basic principles of this approach are reviewed here, along with different applications to lattice potentials with two minima per unit cell, in one and two spatial dimensions. Two independent methods for computing the tight-binding coefficients—one ab initio, based on the maximally localized Wannier functions, the other through analytic expressions in terms of the energy spectrum—are considered. In the one dimensional case, where the tight-binding coefficients can be obtained by designing a specific gauge transformation, we consider both the case of quasi resonance between the two lowest bands, and that between s and p orbitals. In the latter case, the role of the Wannier functions in the derivation of an effective Dirac equation is also reviewed. Then, we consider the case of a two dimensional honeycomb potential, with particular emphasis on the Haldane model, its phase diagram, and the breakdown of the Peierls substitution. Tunable honeycomb lattices, characterized by movable Dirac points, are also considered. Finally, general considerations for dealing with the interaction terms are presented.

关键词： ultracold atoms optical lattices tight-binding models Wannier functions effective Dirac equation honeycomb lattices

Generation of polarized particle beams at relativistic laser intensities

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High Power Laser Science and Engineering 2020年第4期8卷 44-58页

作者： Markus Büscher Anna Hiitzen Liangliang Ji Andreas Lehrach peter griinberg Institut(PGI-6) Forschungszentrum JiilichJiilichGermany Institut fur Laser-und Plasmaphysik Heinrich-Heine-Universitat DiisseldorfDUsseldorfGermany State Key Laboratory of High Field Laser Physics Shanghai Institute of Optics and Fine MechanicsChinese Academy of SciencesShanghai 201800China CAS center for Excellence in Ultra-intense Laser Science Shanghai 201800China JARA-FAME(Forces and Matter Experiments) Forschungszentrum Jiilich and RWTH Aachen UniversityAachenGermany Institut fur Kemphysik(IKP-4) Forschungszentrum JiilichJiilichGermany

The acceleration of polarized electrons,positrons,protons and ions in strong laser and plasma fields is a very attractive option for obtaining polarized beams in the multi-mega-electron volt ***,there has been substantial progress in the understanding of the dominant mechanisms leading to high degrees of polarization,in the numerical modeling of these processes and in their experimental *** review paper presents an overview on the current state of the field,and on the concepts of polarized laser–plasma accelerators and of beam polarimetry.

关键词： high power laser laser-driven plasma accelerator laser-plasma interactions PIC simulations polarized particle beams

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面向可见光波段的非周期悬空GaN薄膜光栅

光学精密工程 2017年第12期25卷 3020-3026页

作者：王永进张锋华高绪敏施政南京邮电大学peter Grunberg研究中心江苏南京210003

基于严格耦合波理论,提出了一种在可见光波段能调控入射光相位的非周期悬空氮化镓(GaN)薄膜光栅。首先,采用有限差分时域(FDTD)方法,通过改变光栅的周期、占空比等参数仿真计算非周期悬空GaN薄膜光栅的光响应。然后,采用双面加工工艺和... 详细信息

基于严格耦合波理论,提出了一种在可见光波段能调控入射光相位的非周期悬空氮化镓(GaN)薄膜光栅。首先,采用有限差分时域(FDTD)方法,通过改变光栅的周期、占空比等参数仿真计算非周期悬空GaN薄膜光栅的光响应。然后,采用双面加工工艺和氮化物背后减薄技术在硅基GaN晶圆上制备非周期悬空GaN薄膜光栅,控制入射光束的相移。最后,通过角分辨微反射谱实验和光致发光测量实验表征了该薄膜光栅的光学性能。角分辨微反射谱实验结果显示非周期悬空GaN薄膜光栅的光学性能与FDTD的理论分析一致;光致发光测量实验显示其光致发光(PL)强度比硅衬底GaN光栅大大增强,峰值从364.3nm转移到378.7nm。另外,在可见光波段内,该悬空非周期GaN光栅有较大的入射角容忍度,为-25°~25°。得到的结果表明,研制的悬空非周期GaN光栅有助于提高光提取效率。

关键词：非周期GaN光栅薄膜光栅悬空薄膜角分辨微反射谱光致发光谱