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Extraordinary Acoustic Transmission in a Helmholtz Resonance Cavity-Constructed Acoustic Grating

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Chinese Physics Letters 2016年第4期33卷 64-67页

作者：余思远倪旭徐叶龙何程 Priyanka Nayar 卢明辉陈延峰 national laboratory of solid state microstructures and department of materials science and engineering Nanjing University

We investigate both experimentally and numerically a complex structure, where ＇face-to-face＇ Helmholtz resonance cavities （HRCs） are introduced to construct a one-dimensional acoustic grating. In this system, pairs of HRCs can intensely couple with each other in two forms： a bonding state and an anti-bonding state, analogous to the character of hydrogen molecule with two atoms due to the interference of wave functions of sound among the acoustic local-resonating structures. The bonding state is a ＇bright＇ state that interferes with the Fabry-Pbrot resonance mode, thereby causing this state to break up into two modes as the splitting of the extraordinary acoustic transmission peak. On the contrary, the anti-bonding state is a ＇dark＇ state in which the resonance mode remains entirely localized within the HRCs, and has no contribution to the acoustic transmission.

关键词： of on in Extraordinary Acoustic Transmission in a Helmholtz Resonance Cavity-Constructed Acoustic Grating mode HRC is FP

GeTe_(4) as a Candidate for Phase Change Memory Application

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Chinese Physics Letters 2013年第5期30卷 169-171页

作者： LI Run TANG Shi-Yu BAI Gang YIN Qiao-Nan LAN Xue-Xin XIA Yi-Dong YIN Jiang LIU Zhi-Guo national laboratory of solid state microstructures and department of Physics Nanjing UniversityNanjing 210093 national laboratory of solid state microstructures and department of materials science and engineering Nanjing UniversityNanjing 210093

GeTe_(4) films are deposited by using a dc magnetron sputtering technique, and its structural, thermal and electrical properties are investigated systematically. The prototypical phase-change memory cells are fabricated by using a focused ion beam and magnetron sputtering techniques. Compared with Ge_(2)Sb_(2)Te_(5), the GeTe_(4) film exhibits a higher crystallization temperature (235℃), better data retention of ten years at 129℃, and larger activation energy (2.94 eV). GeTe4 phase change memory cells with an effective diameter of 1 μm show proper switching speed, low power consumption, and good resistance contrast. The Set and Reset operations are achieved by using a 200-ns 2.0-V pulse and a 30-ns 3.0-V pulse, respectively. The dynamic switching ratio between the OFF and ON states is larger than 1×10^(4).

关键词： resistance operations crystallization

The Distinguished Charge-Trapping Capability of the Memory Device with Al2O3-Cu2O Composite as the Charge Storage Layer

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Chinese Physics Letters 2014年第2期31卷 146-148页

作者：陆建新欧欣蓝学新曹正义刘晓杰卢伟龚昌杰徐波李爱东夏奕东殷江刘治国 national laboratory of solid state microstructures and Department of Physics Nanjing University Nanjing 210093 national laboratory of solid state microstructures and Department of Materials Science and Engineering Nanjing University Nanjing 210093

A memory device Si/Al2O3/Al2O3-Cu2O/Al2O3/Pt is fabricated by using atomic layer deposition and r^magnetron sputtering techniques. The memory device including the composite of Al2O3 and Cu2O as the charge storage layer shows a distinguished charge trapping capability. At a working voltage of ±11 V a memory window of 9.22 V is obtained. The x-ray photoelectron spectroscopic study shows a shoulder from Cu2＋ ions around the peak of Cu1＋ ions. It is suggested that the charge-trapping mechanism should be attributed to the defect states formed by the inter-diffusion at the interface of two oxides.

关键词： Interface states

Monodisperse Silver Nanoparticles Synthesized by a Microwave-Assisted Method

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Chinese Physics Letters 2009年第7期26卷 351-354页

作者：朱少鹏唐少春孟祥康 department of materials science and engineering National Laboratory of Solid State Microstructures Nanjing University Nanjing 210093

Silver nanoparticles with an average size of about 2Ohm are synthesized in a colloidal solution with the aid of microwave irradiation. Neither additional reductant nor stabilizer is required in this microwave-assisted method. The color of the colloidal solution is found to be dark green, different from the characteristic yellow of silver colloidal solutions. The silver nanoparticles in the colloidal solution have a narrow size distribution and large yield quantity. UV-visible absorption spectroscopy analysis reveals that the as-synthesized monodisperse silver nanoparticles have exceptional optical properties. Raman spectroscopy measurements demonstrate that these silver nanoparticles exhibit a notable surface-enhanced Raman scattering ability.

关键词： Soft matter liquids and polymers Condensed matter: electrical magnetic and optical Nanoscale science and low-D systems Condensed matter: structural mechanical & thermal Chemical physics and physical chemistry

Impact of Au Nanocrystal Size and Inter-Nanocrystal Distance on the Storage Characteristics of Memory Devices

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Chinese Physics Letters 2013年第12期30卷 161-164页

作者： LAN Xue-Xin OU Xin XU Bo GONG Chang-Jie LI Run YIN Qiao-Nan XIA Yi-Dong YIN Jiang LIU Zhi-Guo LI Ai-Dong YAN Feng national laboratory of solid state microstructures and Department of PhysicsNanjing UniversityNanjing 210093 national laboratory of solid state microstructures and Department of Materials Science and EngineeringNanjing UniversityNanjing 210093 School of Electronics science and engineering Nanjing UniversityNanjing 210093

The charge-storage characteristics of charge trapping memory devices containing different sizes of Au nanocrystals(NCs)sandwiched by Al2O3 tunneling and blocking layers are studied.A strong impact of both Au NC size and inter-NC distance on the charge trapping capability of the devices is *** total surface area of Au NCs associated with Au NC size is supposed to be a key factor in the charge-storage capability,and the device with larger size of Au NCs and a suitable inter-NC distance will possess better charge trapping *** range hopping as the lateral charge loss mechanism is considered as the main reason for the decrease of the charge trapping capability when Au NCs grow and overlap neighbors.

关键词： trapping size charge

Using coupling slabs to tailor surface-acoustic-wave band structures in phononic crystals consisting of pillars attached to elastic substrates

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science China(Physics,Mechanics & Astronomy) 2017年第4期60卷 45-50页

作者： Heng Zhang SiYuan Yu FuKang Liu Zhen Wang MingHui Lu XiaoBo Hu YanFeng Chen XianGang Xu state Key laboratory of Crystal materials Shandong University national laboratory of solid state microstructures & department of materials science and engineering Nanjing University

The propagation of surface acoustic waves(SAWs) in two-dimensional phononic crystals(PnCs) with and without coupling-enhancement slabs was theoretically investigated using a three-dimensional finite element *** piezoelectric substrates,for example,lithium niobate(LiNbO_3),gallium nitride(GaN),and aluminium nitride(A1N),were taken into *** to the PnCs without coupling-enhancement slabs,the coupling between each pillar and its nearest neighbor was largely enhanced in the presence of *** bandwidth of the first directional band gap increased markedly compared with its initial value for the PnCs without a slab(within square symmetry).In addition,with increasing thicknesses of the slabs bonded between neighboring pillars,the first directional band-gap and second directional band gap of the PnCs tend to ***,the structure with coupling-enhancement slabs can be used as an excellent electrical band elimination filter for most electro-SAW devices,offering a new strategy to realize chip-scale applications in electroacoustic signal processing,optoacoustic modulation,and even SAW microfluidic devices.

关键词： surface acoustic waves(SAWs) phononic crystals(PnCs) tailored band structure

Superconductivity in kagome metal ThRu_(3)Si_(2)

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Chinese Physics B 2024年第5期33卷 36-41页

作者：刘艺厉静杨武璋卢佳依曹博雅李华旬柴万力武思祺李佰卓孙云蕾焦文鹤王操许晓峰任之曹光旱 School of Physics Zhejiang UniversityHangzhou 310058China department of Applied Physics Zhejiang University of TechnologyHangzhou 310023China School of science Westlake Institute for Advanced StudyWestlake UniversityHangzhou 310064China department of Physics Shandong University of TechnologyZibo 255049China School of Information and Electrical engineering Zhejiang University City CollegeHangzhou 310015China Interdisciplinary Center for Quantum Information and State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang UniversityHangzhou 310058China Collaborative Innovation Centre of Advanced microstructures Nanjing UniversityNanjing 210093China

We report the physical properties of ThRu_(3)Si_(2)featured with distorted Ru kagome *** combined experiments of resistivity,magnetization and specific heat reveal bulk superconductivity with T_(c)=3.8 *** specific heat jump and calculated electron–phonon coupling indicate a moderate coupled BCS *** comparison with LaRu_(3)Si_(2),the calculated electronic structure in ThRu_(3)Si_(2)shows an electron-doping effect with electron filling lifted from 100 meV below flat bands to 300 meV above *** explains the lower superconducting transition temperature and weaker electron correlations observed in ThRu_(3)Si_(2).Our work suggests the Tc and electronic correlations in the kagome superconductor could have an intimate connection with the flat bands.

关键词： superconductivity kagome lattice flat band

TixSb2Te Thin Films for Phase Change Memory Applications

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Chinese Physics Letters 2014年第7期31卷 222-225页

作者：唐时宇李润欧欣许含霓夏奕东殷江刘治国 department of materials science and engineering and National Laboratory of Solid State Microstructures Nanjing University Nanjing 210093 department of Physics and National Laboratory of Solid State Mierostructures Nanjing University Nanjing 210093

Sb2 Te films with different Ti contents （TixSb2 Te） are derived via the target-attachment method by using the magnetron sputtering technique. The effects of the Ti content on the phase change characteristics and the microstructures are investigated by x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy and atom force microcopy. Resistance-temperature measurements are carried out to reveal the enhanced crystallization temperature of TixSb2 Te films, indicating a better thermal stability in such films. Both the activation energy and the temperature for 10 y data retention increase with increasing the concentration of Ti. It indicates that the crystallization of the amorphous Sb2 Te film could be suppressed by the introduction of Ti. The improvement of crystallization temperature and the thermal stability of the amorphous Sb2 Te film results from the introduction of Ti in Sb- Te bond that decreases the binding energy of Sb 4d and Te 4d.

关键词： TITANIUM compounds METALLIC films PHASE change memory MAGNETRON sputtering METALS -- Microstructure METALS -- Thermal properties

A Charge-Trap Memory Device with a Composition-Modulated Zr-Silicate High-k Dielectric Multilayer Structure

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Chinese Physics Letters 2010年第6期27卷 254-257页

作者： LV Shi-Cheng GE Zhong-Yang ZHOU Yue XU Bo GAO Li-Gang YIN Jiang XIA Yi-Dong LIU Zhi-Guo department of Physics and national laboratory of solid state microstructures Nanjing University Nanjing 210093 department of materials science and engineering and national laboratory of solid state Mierostructures Nanjing University Nanjing 210093

We report a novel charge-trap memory device with a composition-modulated Zr-silicate high-k dielectric mul- tilayer structure prepared by using the pulsed laser deposition technique. The device employs amorphous （ZrO2）0.5（SiO2）0.5 as the tunneling and blocking oxide layers, and ZrO2 nanocrystals as the trapping storage layer. Zr02 nanocrystals are precipitated from the phase separation of （ZrO2）0.5（SiO2）0.2 films annealed at 800℃, and isolated from each other within the amorphous （ZrO2）0.5（SiO2）0.5 matrix. Our charge trapping device shows a memory window of 2.6 V and a stored electron density of 1×10^13/cm2.

关键词： ELECTRIC charge & distribution COMPUTER storage devices MODULATION (Electronics) ZIRCONIUM compounds MULTILAYERED thin films PULSED laser deposition AMORPHOUS substances TUNNELING (Physics) TEMPERATURE effect